TW430754B - Positive type resist composition - Google Patents

Positive type resist composition

Info

Publication number
TW430754B
TW430754B TW082101241A TW82101241A TW430754B TW 430754 B TW430754 B TW 430754B TW 082101241 A TW082101241 A TW 082101241A TW 82101241 A TW82101241 A TW 82101241A TW 430754 B TW430754 B TW 430754B
Authority
TW
Taiwan
Prior art keywords
resist composition
positive type
type resist
pattern area
novolac resin
Prior art date
Application number
TW082101241A
Other languages
English (en)
Inventor
Yasunori Kamitani
Mahiro Mori
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Application granted granted Critical
Publication of TW430754B publication Critical patent/TW430754B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
TW082101241A 1992-02-25 1993-02-22 Positive type resist composition TW430754B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03775092A JP3391471B2 (ja) 1992-02-25 1992-02-25 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
TW430754B true TW430754B (en) 2001-04-21

Family

ID=12506155

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082101241A TW430754B (en) 1992-02-25 1993-02-22 Positive type resist composition

Country Status (8)

Country Link
US (1) US5424167A (zh)
EP (1) EP0557991B1 (zh)
JP (1) JP3391471B2 (zh)
KR (1) KR100264691B1 (zh)
CA (1) CA2089110A1 (zh)
DE (1) DE69327678T2 (zh)
MX (1) MX9300968A (zh)
TW (1) TW430754B (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
JP3230925B2 (ja) * 1994-04-12 2001-11-19 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
WO1996022563A1 (fr) * 1995-01-17 1996-07-25 Nippon Zeon Co., Ltd. Composition de resist positif
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5514515A (en) * 1995-05-24 1996-05-07 Shipley Company, L.L.C. Photoactive compounds having a heterocyclic group used in photoresist compositions
US5618932A (en) * 1995-05-24 1997-04-08 Shipley Company, L.L.C. Photoactive compounds and compositions
JP3076523B2 (ja) * 1996-03-25 2000-08-14 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3796982B2 (ja) * 1998-06-02 2006-07-12 住友化学株式会社 ポジ型レジスト組成物
JP3945556B2 (ja) * 1998-12-17 2007-07-18 東京応化工業株式会社 液晶素子製造用ポジ型ホトレジスト塗布液及びそれを用いた基材
JP3931486B2 (ja) 1999-06-24 2007-06-13 住友化学株式会社 ポジ型レジスト組成物
US7052824B2 (en) * 2000-06-30 2006-05-30 E. I. Du Pont De Nemours And Company Process for thick film circuit patterning
DE602004022677D1 (de) 2003-07-16 2009-10-01 Tokyo Ohka Kogyo Co Ltd Positivphotoresistzusammensetzung und verfahren zur ausbildung einer resiststruktur
WO2005017617A1 (en) 2003-07-17 2005-02-24 Honeywell International Inc. Planarization films for advanced microelectronic applications and devices and methods of production thereof
US20050221222A1 (en) * 2004-03-22 2005-10-06 Canon Kabushiki Kaisha Photosensitive resin composition, resist pattern forming method, substrate processing method, and device manufacturing method
JP4678195B2 (ja) * 2005-02-03 2011-04-27 三菱瓦斯化学株式会社 フェナントレンキノン誘導体及びその製造方法
KR100725023B1 (ko) 2006-10-16 2007-06-07 제일모직주식회사 카도계 수지를 함유한 수지 조성물 및 그에 의한 패턴의 제조방법, 이를 이용한 컬러필터
KR101333698B1 (ko) 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
EP2532710B1 (en) * 2010-02-03 2018-08-22 DIC Corporation Phenol resin composition, curable resin composition, cured products thereof, and printed circuit board
KR101799396B1 (ko) 2010-05-18 2017-11-21 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법
CN102436142B (zh) 2010-09-29 2013-11-06 第一毛织株式会社 黑色光敏树脂组合物以及使用其的光阻层
KR101367253B1 (ko) 2010-10-13 2014-03-13 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR101486560B1 (ko) 2010-12-10 2015-01-27 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101453769B1 (ko) 2010-12-24 2014-10-22 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 컬러 필터
KR101344786B1 (ko) 2011-12-02 2013-12-26 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한　컬러필터
KR20140076320A (ko) 2012-12-12 2014-06-20 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 스페이서
CN110804173B (zh) * 2019-12-02 2022-07-22 珠海宏昌电子材料有限公司 聚苯醚中间体、聚苯醚衍生物及其制备方法和应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE586713A (zh) * 1959-01-21
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
DE3107109A1 (de) * 1981-02-26 1982-09-09 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
JPS58203434A (ja) * 1982-05-24 1983-11-26 Kanto Kagaku Kk ポジ型フオトレジスト組成物
DE3718416A1 (de) * 1987-06-02 1988-12-15 Hoechst Ag Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung
JP2629990B2 (ja) * 1989-12-20 1997-07-16 住友化学工業株式会社 ポジ型レジスト用組成物
TW202504B (zh) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
EP0445819B1 (en) * 1990-03-08 2001-08-22 Fuji Photo Film Co., Ltd. Positive type photoresist composition

Also Published As

Publication number Publication date
DE69327678T2 (de) 2000-09-07
JP3391471B2 (ja) 2003-03-31
MX9300968A (es) 1993-09-01
EP0557991A1 (en) 1993-09-01
KR100264691B1 (ko) 2000-09-01
DE69327678D1 (de) 2000-03-02
JPH05232697A (ja) 1993-09-10
KR930018325A (ko) 1993-09-21
EP0557991B1 (en) 2000-01-26
CA2089110A1 (en) 1993-08-26
US5424167A (en) 1995-06-13

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