KR900002125A - 내식막 조성물 - Google Patents
내식막 조성물 Download PDFInfo
- Publication number
- KR900002125A KR900002125A KR1019890010311A KR890010311A KR900002125A KR 900002125 A KR900002125 A KR 900002125A KR 1019890010311 A KR1019890010311 A KR 1019890010311A KR 890010311 A KR890010311 A KR 890010311A KR 900002125 A KR900002125 A KR 900002125A
- Authority
- KR
- South Korea
- Prior art keywords
- resist composition
- positive resist
- composition according
- formula
- alkali
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (6)
- 알칼리-가용성 수지 및 하기 일발식(I) 또는 (II)의 페놀 화합물의 최소한 하나의 퀴논 디아지드 술폰산 에스테르를 함유함을 특징으로 하는 양성 내식막 조성물.(식중, a, c 및 d는 같거나 다르고 0 내지 3의 수이며, 이때 a가 0 또는 3이면 b는 0 내지 3의 수이거나 a가 1 또는 2이면 b는 0, 1 또는 2의 수이고, a+b 및 c+d는 2 이상임을 조건으로 하며 ; R 및 R'는 같거나 다르고 알킬기 또는 아릴기이다.)
- 제1항에 있어서, 일반식(I)의 a+b가 2인 양성 내식막 조성물.
- 제1항에 있어서, 일반식(II)의 c+d가 2인 양성 내식막 조성물.
- 제1항에 있어서, 페놀 화합물이 하기 일반식으로 이루어지는 군에서 선택된 최소한 하나인 양성 내식막 조성물.
- 제1항에 있어서, 알칼리-가용성 수지가 노볼락 수지인 양성 내식막 조성물.
- 제1항에 있어서, 퀴논 디아지드 술폰산에스테르의 양이 내식막 조성물 중의 고체성분 총중량에 대하여 15 내지 50중량%인 양성 내식막 조성물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88-182434 | 1988-07-20 | ||
JP63182434A JP2636348B2 (ja) | 1988-07-20 | 1988-07-20 | ポジ型レジスト用組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900002125A true KR900002125A (ko) | 1990-02-28 |
KR0131761B1 KR0131761B1 (ko) | 1998-04-13 |
Family
ID=16118201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890010311A KR0131761B1 (ko) | 1988-07-20 | 1989-07-20 | 내식막 조성물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5124228A (ko) |
EP (1) | EP0351849B1 (ko) |
JP (1) | JP2636348B2 (ko) |
KR (1) | KR0131761B1 (ko) |
CA (1) | CA1337627C (ko) |
DE (1) | DE68927315T2 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2715480B2 (ja) * | 1988-10-13 | 1998-02-18 | 住友化学工業株式会社 | ポジ型レジスト用組成物 |
JP2700918B2 (ja) * | 1989-04-26 | 1998-01-21 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
US5322757A (en) * | 1989-09-08 | 1994-06-21 | Ocg Microelectronic Materials, Inc. | Positive photoresists comprising a novolak resin made from 2,3-dimethyl phenol,2,3,5-trimethylphenol and aldehyde with no meta-cresol present |
US5283155A (en) * | 1991-01-11 | 1994-02-01 | Sumitomo Chemical Company, Limited | Positive resist composition comprising an alkali-soluble resin and a quinone diazide sulfonic acid ester of a hydroxy flavan derivative |
DE4209343A1 (de) * | 1992-03-23 | 1993-09-30 | Hoechst Ag | 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial |
US6280910B1 (en) | 1992-11-23 | 2001-08-28 | Pioneer Electronic Corporation | Photoresist for optical disc and method of preparing optical disc utilizing photoresist |
US5592143A (en) * | 1994-07-25 | 1997-01-07 | Romney; Julie B. | Pulsed-tone timing exercise method |
EP0695740B1 (en) | 1994-08-05 | 2000-11-22 | Sumitomo Chemical Company Limited | Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same |
DE59504291D1 (de) * | 1994-09-12 | 1998-12-24 | Siemens Ag | Photolithographische strukturerzeugung |
US5863705A (en) * | 1994-09-12 | 1999-01-26 | Siemens Aktiengesellschaft | Photolithographic pattern generation |
US5619663A (en) * | 1994-09-16 | 1997-04-08 | Philips Electronics North America Corp. | Computer instruction prefetch system |
KR20060090519A (ko) * | 2005-02-07 | 2006-08-11 | 삼성전자주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3100077A1 (de) * | 1981-01-03 | 1982-08-05 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters |
JPS58150948A (ja) * | 1982-03-03 | 1983-09-07 | Dainippon Ink & Chem Inc | 感光性組成物 |
US4526856A (en) * | 1983-05-23 | 1985-07-02 | Allied Corporation | Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents |
JPS60121445A (ja) * | 1983-12-06 | 1985-06-28 | Japan Synthetic Rubber Co Ltd | 集積回路作製用ポジ型感光性樹脂組成物 |
US4626492A (en) * | 1985-06-04 | 1986-12-02 | Olin Hunt Specialty Products, Inc. | Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound |
JPH0654381B2 (ja) * | 1985-12-24 | 1994-07-20 | 日本合成ゴム株式会社 | 集積回路作製用ポジ型レジスト |
JPS62153950A (ja) * | 1985-12-27 | 1987-07-08 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
JP2568827B2 (ja) * | 1986-10-29 | 1997-01-08 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
JP2590342B2 (ja) * | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
JP2558716B2 (ja) * | 1987-07-10 | 1996-11-27 | 東洋合成工業株式会社 | ポジ型ホトレジスト組成物 |
US4837121A (en) * | 1987-11-23 | 1989-06-06 | Olin Hunt Specialty Products Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin |
JP2569650B2 (ja) * | 1987-12-15 | 1997-01-08 | 日本合成ゴム株式会社 | 感放射線性樹脂組成物 |
-
1988
- 1988-07-20 JP JP63182434A patent/JP2636348B2/ja not_active Expired - Fee Related
-
1989
- 1989-07-18 US US07/381,298 patent/US5124228A/en not_active Expired - Fee Related
- 1989-07-19 CA CA000606171A patent/CA1337627C/en not_active Expired - Fee Related
- 1989-07-20 EP EP89113345A patent/EP0351849B1/en not_active Expired - Lifetime
- 1989-07-20 KR KR1019890010311A patent/KR0131761B1/ko not_active IP Right Cessation
- 1989-07-20 DE DE68927315T patent/DE68927315T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0351849A2 (en) | 1990-01-24 |
EP0351849B1 (en) | 1996-10-09 |
EP0351849A3 (en) | 1991-04-03 |
US5124228A (en) | 1992-06-23 |
JPH0232352A (ja) | 1990-02-02 |
CA1337627C (en) | 1995-11-28 |
DE68927315D1 (de) | 1996-11-14 |
DE68927315T2 (de) | 1997-02-20 |
JP2636348B2 (ja) | 1997-07-30 |
KR0131761B1 (ko) | 1998-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |