KR900002125A - 내식막 조성물 - Google Patents

내식막 조성물 Download PDF

Info

Publication number
KR900002125A
KR900002125A KR1019890010311A KR890010311A KR900002125A KR 900002125 A KR900002125 A KR 900002125A KR 1019890010311 A KR1019890010311 A KR 1019890010311A KR 890010311 A KR890010311 A KR 890010311A KR 900002125 A KR900002125 A KR 900002125A
Authority
KR
South Korea
Prior art keywords
resist composition
positive resist
composition according
formula
alkali
Prior art date
Application number
KR1019890010311A
Other languages
English (en)
Other versions
KR0131761B1 (ko
Inventor
야스노리 우에따니
마꼬또 하나바따
히로또시 나까니시
고오지 구와나
후미오 오오이
Original Assignee
모리 히데오
스미또모 가가꾸고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리 히데오, 스미또모 가가꾸고오교 가부시끼가이샤 filed Critical 모리 히데오
Publication of KR900002125A publication Critical patent/KR900002125A/ko
Application granted granted Critical
Publication of KR0131761B1 publication Critical patent/KR0131761B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)

Abstract

내용 없음

Description

내식막 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 알칼리-가용성 수지 및 하기 일발식(I) 또는 (II)의 페놀 화합물의 최소한 하나의 퀴논 디아지드 술폰산 에스테르를 함유함을 특징으로 하는 양성 내식막 조성물.
    (식중, a, c 및 d는 같거나 다르고 0 내지 3의 수이며, 이때 a가 0 또는 3이면 b는 0 내지 3의 수이거나 a가 1 또는 2이면 b는 0, 1 또는 2의 수이고, a+b 및 c+d는 2 이상임을 조건으로 하며 ; R 및 R'는 같거나 다르고 알킬기 또는 아릴기이다.)
  2. 제1항에 있어서, 일반식(I)의 a+b가 2인 양성 내식막 조성물.
  3. 제1항에 있어서, 일반식(II)의 c+d가 2인 양성 내식막 조성물.
  4. 제1항에 있어서, 페놀 화합물이 하기 일반식으로 이루어지는 군에서 선택된 최소한 하나인 양성 내식막 조성물.
  5. 제1항에 있어서, 알칼리-가용성 수지가 노볼락 수지인 양성 내식막 조성물.
  6. 제1항에 있어서, 퀴논 디아지드 술폰산에스테르의 양이 내식막 조성물 중의 고체성분 총중량에 대하여 15 내지 50중량%인 양성 내식막 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010311A 1988-07-20 1989-07-20 내식막 조성물 KR0131761B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-182434 1988-07-20
JP63182434A JP2636348B2 (ja) 1988-07-20 1988-07-20 ポジ型レジスト用組成物

Publications (2)

Publication Number Publication Date
KR900002125A true KR900002125A (ko) 1990-02-28
KR0131761B1 KR0131761B1 (ko) 1998-04-13

Family

ID=16118201

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890010311A KR0131761B1 (ko) 1988-07-20 1989-07-20 내식막 조성물

Country Status (6)

Country Link
US (1) US5124228A (ko)
EP (1) EP0351849B1 (ko)
JP (1) JP2636348B2 (ko)
KR (1) KR0131761B1 (ko)
CA (1) CA1337627C (ko)
DE (1) DE68927315T2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
JP2700918B2 (ja) * 1989-04-26 1998-01-21 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5322757A (en) * 1989-09-08 1994-06-21 Ocg Microelectronic Materials, Inc. Positive photoresists comprising a novolak resin made from 2,3-dimethyl phenol,2,3,5-trimethylphenol and aldehyde with no meta-cresol present
US5283155A (en) * 1991-01-11 1994-02-01 Sumitomo Chemical Company, Limited Positive resist composition comprising an alkali-soluble resin and a quinone diazide sulfonic acid ester of a hydroxy flavan derivative
DE4209343A1 (de) * 1992-03-23 1993-09-30 Hoechst Ag 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial
US6280910B1 (en) 1992-11-23 2001-08-28 Pioneer Electronic Corporation Photoresist for optical disc and method of preparing optical disc utilizing photoresist
US5592143A (en) * 1994-07-25 1997-01-07 Romney; Julie B. Pulsed-tone timing exercise method
EP0695740B1 (en) 1994-08-05 2000-11-22 Sumitomo Chemical Company Limited Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same
DE59504291D1 (de) * 1994-09-12 1998-12-24 Siemens Ag Photolithographische strukturerzeugung
US5863705A (en) * 1994-09-12 1999-01-26 Siemens Aktiengesellschaft Photolithographic pattern generation
US5619663A (en) * 1994-09-16 1997-04-08 Philips Electronics North America Corp. Computer instruction prefetch system
KR20060090519A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS58150948A (ja) * 1982-03-03 1983-09-07 Dainippon Ink & Chem Inc 感光性組成物
US4526856A (en) * 1983-05-23 1985-07-02 Allied Corporation Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents
JPS60121445A (ja) * 1983-12-06 1985-06-28 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感光性樹脂組成物
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
JPH0654381B2 (ja) * 1985-12-24 1994-07-20 日本合成ゴム株式会社 集積回路作製用ポジ型レジスト
JPS62153950A (ja) * 1985-12-27 1987-07-08 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JP2568827B2 (ja) * 1986-10-29 1997-01-08 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
JP2558716B2 (ja) * 1987-07-10 1996-11-27 東洋合成工業株式会社 ポジ型ホトレジスト組成物
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
JP2569650B2 (ja) * 1987-12-15 1997-01-08 日本合成ゴム株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
EP0351849A2 (en) 1990-01-24
EP0351849B1 (en) 1996-10-09
EP0351849A3 (en) 1991-04-03
US5124228A (en) 1992-06-23
JPH0232352A (ja) 1990-02-02
CA1337627C (en) 1995-11-28
DE68927315D1 (de) 1996-11-14
DE68927315T2 (de) 1997-02-20
JP2636348B2 (ja) 1997-07-30
KR0131761B1 (ko) 1998-04-13

Similar Documents

Publication Publication Date Title
KR900002123A (ko) 감방사선성 양성 내식막 조성물
KR900000727A (ko) 내식제 조성물
KR910010239A (ko) 방사선 감응성 수지 조성물
KR880009291A (ko) 포지티브-작용성 감광성 내식막 조성물
WO1989004849A1 (en) Thermally stable phenolic resin compositions and their use in light-sensitive compositions
KR900002125A (ko) 내식막 조성물
KR910006416A (ko) 열경화성 수지 조성물
KR930010622A (ko) 네가티브형 레지스터 조성물
KR890008086A (ko) 사이클로헥산 유도체
ATE88024T1 (de) Photoempfindliche zusammensetzung.
KR920015158A (ko) 네거티브 포토레지스트 조성물
KR930002878A (ko) 감광성 조성물
KR920701869A (ko) 포지티브 레지스트 조성물
KR970028826A (ko) 신규 술포늄염 및 화학 증폭 포지형 레지스트 재료
KR920001243A (ko) 포지티브 감 방사선성 레지스트 조성물
KR960042214A (ko) 포지티브형 내식막 조성물
KR920702890A (ko) 포지티브 레지스트 조성물
KR920016265A (ko) 알칼리 현상가능한 감광성 수지 조성물
KR870007446A (ko) 감광성 조성물
KR880003398A (ko) 레지스트 재료
KR920018040A (ko) 다가 페놀 화합물 및 그것을 함유하는 포지티브 레지스트 조성물
KR910006779A (ko) 감방사선성 포지티브 레지스트 조성물
KR920000010A (ko) 방사선-감작 포지티브 레지스트 조성물
KR950012149A (ko) 감광성 수지 조성물 및 이를 사용한 패턴의 형성 방법
KR890016424A (ko) 포지티브-워킹 감광성조성물

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee