KR920701869A - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물

Info

Publication number
KR920701869A
KR920701869A KR1019910700940A KR910700940A KR920701869A KR 920701869 A KR920701869 A KR 920701869A KR 1019910700940 A KR1019910700940 A KR 1019910700940A KR 910700940 A KR910700940 A KR 910700940A KR 920701869 A KR920701869 A KR 920701869A
Authority
KR
South Korea
Prior art keywords
resist composition
group
positive resist
alkyl group
atom
Prior art date
Application number
KR1019910700940A
Other languages
English (en)
Other versions
KR0166368B1 (ko
Inventor
야스노리 우에따니
히로또시 나까니시
Original Assignee
모리 히데오
스미또모가가꾸고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리 히데오, 스미또모가가꾸고오교 가부시끼가이샤 filed Critical 모리 히데오
Publication of KR920701869A publication Critical patent/KR920701869A/ko
Application granted granted Critical
Publication of KR0166368B1 publication Critical patent/KR0166368B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

내용 없음

Description

포지티브 레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 합성예 1에서 제조한 화합물의1H-NMR 스펙트럼(용매 : 아세톤-d6,TMS)이고, 제2도는 합성예2에서 제조한 화합물의1H-NMR 스펙트럼(용매 : 아세톤-d6,TMS)이다.

Claims (4)

  1. 알칼리 가용성 수지, 감방사선 성분으로서 퀴논 디아지드 화합물 및 하기식(I)의 화합물을 함유하는 포지티브 레지스트 조성물.
    〔식중, Z1~Z9은 독립적으로 수소원자, 알킬기, 할로겐원자 또는 히드록실기(단, Z1~Z9중 적어도 하나는 히드록 실기이다)이며, R1~R6는 독립적으로 수소원자, 알킬기, 알케닐기, 시클로알킬기 또는 아릴기이다. 〕
  2. 제1항에 있어서, Z1~Z9의 알킬기가 C1~C4알킬기인 포지티브 레지스트 조성물.
  3. 제1항에 있어서, R1~R6의 알킬기가 C1~C10알킬기인 포지티브 레지스트 조성물.
  4. 제1항에 있어서, 알케닐기가 C1~C4알케닐기인 포지티브 레지스트 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910700940A 1989-12-20 1990-12-20 포지티브 레지스트 조성물 KR0166368B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP331995/89 1989-12-20
JP1331995A JP2629990B2 (ja) 1989-12-20 1989-12-20 ポジ型レジスト用組成物

Publications (2)

Publication Number Publication Date
KR920701869A true KR920701869A (ko) 1992-08-12
KR0166368B1 KR0166368B1 (ko) 1999-01-15

Family

ID=18249965

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910700940A KR0166368B1 (ko) 1989-12-20 1990-12-20 포지티브 레지스트 조성물

Country Status (7)

Country Link
US (2) US5290657A (ko)
EP (1) EP0458988B1 (ko)
JP (1) JP2629990B2 (ko)
KR (1) KR0166368B1 (ko)
CA (1) CA2046908A1 (ko)
DE (1) DE69032204T2 (ko)
WO (1) WO1991009346A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3039048B2 (ja) * 1991-11-01 2000-05-08 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
JP3391471B2 (ja) * 1992-02-25 2003-03-31 住友化学工業株式会社 ポジ型レジスト組成物
US5726257A (en) * 1994-08-30 1998-03-10 Sumitomo Chemical Company, Ltd. Esterified resorcinol-carbonyl compound condensates and epoxy resins therewith
JPH0954437A (ja) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JP3562673B2 (ja) 1996-01-22 2004-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
TW475926B (en) * 1996-06-06 2002-02-11 Sumitomo Chemical Co Novel ester compound and thermosetting resin composition using the same
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP3931486B2 (ja) 1999-06-24 2007-06-13 住友化学株式会社 ポジ型レジスト組成物
AU2002210686A1 (en) * 2000-10-18 2002-04-29 Ribotargets Limited Flavan compounds, their preparation and their use in therapy
US6964838B2 (en) 2001-01-17 2005-11-15 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition
US7462436B2 (en) 2003-07-16 2008-12-09 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and method of forming resist pattern
KR101758398B1 (ko) 2009-09-11 2017-07-14 제이에스알 가부시끼가이샤 감방사선성 조성물 및 신규 화합물
EP3253735B1 (en) 2015-02-02 2021-03-31 Basf Se Latent acids and their use
JP6783540B2 (ja) 2015-03-31 2020-11-11 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
DK556286A (da) * 1985-11-27 1987-05-28 Int Flavors & Fragrances Inc Fremgangsmaade til fremstilling af frugt- groensags- eller krydderidsserter.
EP0244763B1 (de) * 1986-05-02 1993-03-10 Hoechst Celanese Corporation Positiv-arbeitendes lichtempfindliches Gemisch und daraus hergestelltes lichtempfindliches Aufzeichnungsmaterial
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
DE3718416A1 (de) * 1987-06-02 1988-12-15 Hoechst Ag Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung
JPH0814696B2 (ja) * 1987-09-17 1996-02-14 富士写真フイルム株式会社 感光性樹脂組成物
JP2625883B2 (ja) * 1988-05-17 1997-07-02 住友化学工業株式会社 ポジ型レジスト組成物
JP2625882B2 (ja) * 1988-05-17 1997-07-02 住友化学工業株式会社 ポジ型レジスト用組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
JPH06224241A (ja) * 1993-01-25 1994-08-12 Toyota Autom Loom Works Ltd 樹脂封止回路装置の成形方法
JPH06324244A (ja) * 1993-05-11 1994-11-25 Canon Inc 駆動装置

Also Published As

Publication number Publication date
EP0458988A4 (en) 1992-07-01
JP2629990B2 (ja) 1997-07-16
EP0458988A1 (en) 1991-12-04
DE69032204D1 (de) 1998-05-07
US5374742A (en) 1994-12-20
US5290657A (en) 1994-03-01
JPH03191351A (ja) 1991-08-21
WO1991009346A1 (en) 1991-06-27
EP0458988B1 (en) 1998-04-01
CA2046908A1 (en) 1991-06-21
DE69032204T2 (de) 1998-07-23
KR0166368B1 (ko) 1999-01-15

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