KR960042214A - 포지티브형 내식막 조성물 - Google Patents

포지티브형 내식막 조성물 Download PDF

Info

Publication number
KR960042214A
KR960042214A KR1019960014942A KR19960014942A KR960042214A KR 960042214 A KR960042214 A KR 960042214A KR 1019960014942 A KR1019960014942 A KR 1019960014942A KR 19960014942 A KR19960014942 A KR 19960014942A KR 960042214 A KR960042214 A KR 960042214A
Authority
KR
South Korea
Prior art keywords
weight
quinone diazide
amount
ethyl lactate
compound
Prior art date
Application number
KR1019960014942A
Other languages
English (en)
Other versions
KR100591863B1 (ko
Inventor
가츠히코 남바
가오루 다테카와
히로시 모리우마
야스노리 우에타니
Original Assignee
고사이 아키오
스미토모가가쿠고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고사이 아키오, 스미토모가가쿠고교 가부시키가이샤 filed Critical 고사이 아키오
Publication of KR960042214A publication Critical patent/KR960042214A/ko
Application granted granted Critical
Publication of KR100591863B1 publication Critical patent/KR100591863B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)

Abstract

퀴논디아지드 화합물(A), 알칼리 가용성 수지(B) 및 2-헵타논, 에틸 락테이트 및

Description

포지티브형 내식막 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 퀴논디아지드 화합물(A), 알칼리 수용성 수지(B) 및 2-헵타논, 에틸 락테이트 밍 γ-부티롤락톤을 포함하는 용매 시스템(C)〔여기서, 용매 시스템(C)의 전체 양을 기준으로 하여, γ-부티롤락톤의 양은 0.5중량% 이상이고, 에틸 락테이트의 양은 10중량%, 이상이다〕을 포함하는 포지티브형 내식막 조성물.
  2. 제1항에 있어서, 2-헵타논과 에틸 락테이트가, 용매 시스템(C)의 전체 양을 기준으로 하여, 50중량% 이상의 양으로 포함되어 있는 조성물.
  3. 제1항에 있어서, 퀴논디아지드 화합물이 다음 일반식(Ⅰ)의 하이드록시벤조페놀 화합물의 퀴논디아지드설폰산 에스테르인 조성물.
    상기 식에서, R1내지 R10은, 이들 중의 2개의 그룹은 하이드록실 그룹을 나타내고 다른 그룹들은 각각 독립적으로 수소원자 또는 하이드록실 그룹을 나타낸다.
  4. 제1항 내지 제3항 중의 어느 한 항에 있어서, 퀴논디아지드 화합물(A)과 알칼리 가용성 수지(B)를 합한 양이, 내식막 조성물의 전체 양을 기준으로 하여, 3 내지 50중량%인 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960014942A 1995-05-09 1996-05-08 포지티브형레지스트조성물 KR100591863B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11041495A JP3427562B2 (ja) 1995-05-09 1995-05-09 ポジ型レジスト組成物
JP95-110414 1995-05-09

Publications (2)

Publication Number Publication Date
KR960042214A true KR960042214A (ko) 1996-12-21
KR100591863B1 KR100591863B1 (ko) 2006-09-14

Family

ID=14535182

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014942A KR100591863B1 (ko) 1995-05-09 1996-05-08 포지티브형레지스트조성물

Country Status (5)

Country Link
US (1) US5849457A (ko)
EP (1) EP0742489A1 (ko)
JP (1) JP3427562B2 (ko)
KR (1) KR100591863B1 (ko)
SG (1) SG47137A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
WO1998049601A1 (fr) * 1997-04-30 1998-11-05 Nippon Zeon Co., Ltd. Composition de photoresine positive pour photomasque
JP4073572B2 (ja) * 1998-05-13 2008-04-09 富士通株式会社 放射線感光材料及びパターンの形成方法
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
KR100299689B1 (ko) * 1999-08-30 2001-09-13 한의섭 포지티브형 포토레지스트 조성물
KR100299688B1 (ko) * 1999-08-30 2001-09-13 한의섭 포지티브형 포토레지스트 조성물
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
US6787286B2 (en) * 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
KR100846085B1 (ko) * 2001-10-31 2008-07-14 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
EP1554033A4 (en) * 2002-02-06 2007-12-05 Fujifilm Electronic Materials IMPROVED COMPOSITIONS FOR REMOVING BORED BEADS OF SEMICONDUCTOR LOADING BUFFER COATINGS AND METHOD FOR THEIR USE
WO2006083104A1 (en) 2005-02-02 2006-08-10 Kolon Industries, Inc Method for manufacturing array board for display device
JP4699482B2 (ja) * 2005-02-02 2011-06-08 コーロン インダストリーズ インク ポジティブ型ドライフィルムフォトレジストの製造方法
KR101280019B1 (ko) * 2005-12-01 2013-06-28 주식회사 동진쎄미켐 포토레지스트 조성물

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290656A (en) * 1988-05-07 1994-03-01 Sumitomo Chemical Company, Limited Resist composition, novel phenol compound and quinone diazide sulfonic acid ester of novel phenol compound
US5059507A (en) * 1988-06-13 1991-10-22 Sumitomo Chemical Company, Limited Positive resist composition containing quinone diazide sulfonic acid ester of a phenol compound and an alkali soluble resin
JP2808678B2 (ja) * 1989-06-19 1998-10-08 日本電気株式会社 出力回路
US5283155A (en) * 1991-01-11 1994-02-01 Sumitomo Chemical Company, Limited Positive resist composition comprising an alkali-soluble resin and a quinone diazide sulfonic acid ester of a hydroxy flavan derivative
JPH04241353A (ja) * 1991-01-16 1992-08-28 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3070116B2 (ja) * 1991-03-25 2000-07-24 住友化学工業株式会社 多価フェノール化合物およびそれを用いてなるポジ型レジスト組成物
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物
EP0510670B1 (en) * 1991-04-26 1996-09-25 Sumitomo Chemical Company, Limited Positive resist composition
MX9201930A (es) * 1991-04-26 1992-11-01 Sumitomo Chemical Co Composicion de capa protectora positiva (caso 516303).
JPH04362645A (ja) * 1991-06-11 1992-12-15 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH04368950A (ja) * 1991-06-18 1992-12-21 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH05204144A (ja) * 1991-08-21 1993-08-13 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3039048B2 (ja) * 1991-11-01 2000-05-08 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
JPH05150450A (ja) * 1991-11-29 1993-06-18 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3182823B2 (ja) * 1991-12-27 2001-07-03 住友化学工業株式会社 ポジ型レジスト組成物
JP3391471B2 (ja) * 1992-02-25 2003-03-31 住友化学工業株式会社 ポジ型レジスト組成物
JPH05249666A (ja) * 1992-03-05 1993-09-28 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
JPH05323604A (ja) * 1992-05-27 1993-12-07 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH05323605A (ja) * 1992-05-27 1993-12-07 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3466218B2 (ja) * 1992-06-04 2003-11-10 住友化学工業株式会社 ポジ型レジスト組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound

Also Published As

Publication number Publication date
SG47137A1 (en) 1998-03-20
JP3427562B2 (ja) 2003-07-22
EP0742489A1 (en) 1996-11-13
US5849457A (en) 1998-12-15
KR100591863B1 (ko) 2006-09-14
JPH08305014A (ja) 1996-11-22

Similar Documents

Publication Publication Date Title
KR960042214A (ko) 포지티브형 내식막 조성물
KR900000727A (ko) 내식제 조성물
KR970028825A (ko) 신규 술포늄염 및 화학 증폭 포지형 레지스트 재료
KR970705973A (ko) 피부외용제(external skin preparation)
KR950001415A (ko) 포토레지스트 조성물
KR930002478A (ko) 가역성 열변색 재료
KR900002123A (ko) 감방사선성 양성 내식막 조성물
KR950009362A (ko) 포토레지스트 조성물
KR920002717A (ko) 분말 피복 조성물
KR960038480A (ko) 화학적으로 증폭된 포지티브형 레지스터 조성물
KR880014418A (ko) 폴리실란 및 감광성 조성물
KR970012008A (ko) 알카리 현상을 위한 레지스트
KR970028826A (ko) 신규 술포늄염 및 화학 증폭 포지형 레지스트 재료
KR960024672A (ko) 화학증폭 포지형 레지스트 조성물
KR920701869A (ko) 포지티브 레지스트 조성물
KR900002125A (ko) 내식막 조성물
KR927003488A (ko) 술폰화제 및 술폰화법
KR910020496A (ko) 포지티브 레지스트 조성물
KR870009255A (ko) 감광성 조성물
KR960042218A (ko) 포토레지스트 조성물
KR920020260A (ko) 포지티브형 레지스트 조성물
KR890016424A (ko) 포지티브-워킹 감광성조성물
KR910006779A (ko) 감방사선성 포지티브 레지스트 조성물
KR920020261A (ko) 포지티브 레지스트 조성물
KR910001456A (ko) 고해상도 능력이 있는 양극 포토레지스트

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B90T Transfer of trial file for re-examination
E902 Notification of reason for refusal
B601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20041027

Effective date: 20060224

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130522

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20140521

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20150519

Year of fee payment: 10

EXPY Expiration of term