KR870009255A - 감광성 조성물 - Google Patents
감광성 조성물 Download PDFInfo
- Publication number
- KR870009255A KR870009255A KR870002905A KR870002905A KR870009255A KR 870009255 A KR870009255 A KR 870009255A KR 870002905 A KR870002905 A KR 870002905A KR 870002905 A KR870002905 A KR 870002905A KR 870009255 A KR870009255 A KR 870009255A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- structural unit
- general formula
- following general
- unit represented
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (2)
- 다음 일반식(Ⅰ) 또는 (Ⅱ)로 표시되는 구조단 위와 다음 일반식(Ⅲ)으로 표시되는 구조단위를 갖는 중합체를 함유하는 수지와 감광성 화합물로서 이루어지되, 상기 수지의 평균분자량은 10 내지 10이며, 상기 수지중에 다음 일반시식(Ⅰ) 또는 (Ⅱ)로 표시되는 구조단위와 다음 일반식(Ⅲ)로 표시되는 구조단위를 함유하는 중합체의 함량이 10내지 100중량%인 것임을 특징으로 하는 감광성 조성물(단, 윗식에서 R1,R2,R3,R4및 R5는 동일하거나 다를수도 있으며, 이들은 각각 수소원자, 할로겐원자, 알킬기, 카르복실기, 아킬카르복실기, 알콕시카르복실기, 알콕시기, 아실록시기, 아릴기, 아릴기, 히드록시기, 할로겐알킬기, 시아노알칼기 또는 알콜시알콜기를 나타내며, R6는 수소원자, 알킬기, 아릴기, 알릴기, 알킬카르복실기, 아릴카르복실기 또는 퀴논디아지드설포닐기를 나타낸다.)(단, 윗식에서 R7,R8,R9,R10및 R11은 동일하거나 다를수 있으며, 이들은 각각 수소원자, 할로겐원자, 알킬기, 카르복실기, 알킬카르복실기, 알콕시카르복실기, 알콕시기, 아실록시기, 아릴기, 알릴기, 히드록시기 할로겐알킬기, 시아노알킬기 또는 알콕시알킬기를 나타낸다.)
- 제1항에 있어서, 상기 감광성 조성물에 있어서 감광성 화합물의, 비율이 0.1-50중량%인 것을 특징으로 하는 감광성 조성물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61068803A JPS62227143A (ja) | 1986-03-28 | 1986-03-28 | 感光性組成物 |
JP68803 | 1986-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870009255A true KR870009255A (ko) | 1987-10-24 |
KR900005417B1 KR900005417B1 (ko) | 1990-07-30 |
Family
ID=13384239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870002905A KR900005417B1 (ko) | 1986-03-28 | 1987-03-28 | 감광성 조성물 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4828958A (ko) |
EP (1) | EP0240843B1 (ko) |
JP (1) | JPS62227143A (ko) |
KR (1) | KR900005417B1 (ko) |
DE (1) | DE3789154T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020092726A (ko) * | 2001-06-05 | 2002-12-12 | 주식회사 동진쎄미켐 | 포지티브 포토레지스트 조성물 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0307752B1 (en) * | 1987-09-16 | 1995-02-22 | Hoechst Aktiengesellschaft | Poly(3-mono- and 3,5-disubstituted-4-acetoxystyrenes and 4-hydroxy-styrenes)and their use |
JP2567282B2 (ja) * | 1989-10-02 | 1996-12-25 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
EP0440374B1 (en) * | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
JP3030672B2 (ja) * | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
US5198517A (en) * | 1991-08-06 | 1993-03-30 | Eastman Kodak Company | Polymeric scavengers for oxidized developing agents and photographic elements containing the same |
DE69218393T2 (de) * | 1991-12-16 | 1997-10-16 | Matsushita Electric Ind Co Ltd | Resistmaterial |
US5550004A (en) * | 1992-05-06 | 1996-08-27 | Ocg Microelectronic Materials, Inc. | Chemically amplified radiation-sensitive composition |
US5340687A (en) * | 1992-05-06 | 1994-08-23 | Ocg Microelectronic Materials, Inc. | Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol |
TW288112B (ko) * | 1993-06-02 | 1996-10-11 | Sumitomo Chemical Co | |
US5853953A (en) * | 1996-09-06 | 1998-12-29 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
TWI751064B (zh) | 2021-03-29 | 2021-12-21 | 長春人造樹脂廠股份有限公司 | 多元酚樹脂、多元酚樹脂之縮水甘油醚及其應用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1375461A (ko) * | 1972-05-05 | 1974-11-27 | ||
JPS5236043B2 (ko) * | 1974-02-21 | 1977-09-13 | ||
JPS6053301B2 (ja) * | 1979-08-31 | 1985-11-25 | 冨士薬品工業株式会社 | ポジ型感光性組成物 |
US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
JPS6017739A (ja) * | 1983-07-12 | 1985-01-29 | Cosmo Co Ltd | 微細加工用感光性レジスト |
JPS6045240A (ja) * | 1983-08-23 | 1985-03-11 | Fujitsu Ltd | アルカリ現像ネガ型レジスト組成物 |
JPS60107644A (ja) * | 1983-09-16 | 1985-06-13 | フイリツプ エイ.ハント ケミカル コ−ポレ−シヨン | 現像しうる水性ネガレジスト組成物 |
DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
US4603101A (en) * | 1985-09-27 | 1986-07-29 | General Electric Company | Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials |
US4737437A (en) * | 1986-03-27 | 1988-04-12 | East Shore Chemical Co. | Light sensitive diazo compound, composition and method of making the composition |
US4732836A (en) * | 1986-05-02 | 1988-03-22 | Hoechst Celanese Corporation | Novel mixed ester O-quinone photosensitizers |
US4732837A (en) * | 1986-05-02 | 1988-03-22 | Hoechst Celanese Corporation | Novel mixed ester O-quinone photosensitizers |
-
1986
- 1986-03-28 JP JP61068803A patent/JPS62227143A/ja active Pending
-
1987
- 1987-03-09 US US07/023,261 patent/US4828958A/en not_active Expired - Lifetime
- 1987-03-25 DE DE3789154T patent/DE3789154T2/de not_active Expired - Fee Related
- 1987-03-25 EP EP87104399A patent/EP0240843B1/en not_active Expired - Lifetime
- 1987-03-28 KR KR1019870002905A patent/KR900005417B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020092726A (ko) * | 2001-06-05 | 2002-12-12 | 주식회사 동진쎄미켐 | 포지티브 포토레지스트 조성물 |
Also Published As
Publication number | Publication date |
---|---|
EP0240843B1 (en) | 1994-03-02 |
DE3789154T2 (de) | 1994-07-14 |
JPS62227143A (ja) | 1987-10-06 |
KR900005417B1 (ko) | 1990-07-30 |
EP0240843A3 (en) | 1990-06-20 |
US4828958A (en) | 1989-05-09 |
DE3789154D1 (de) | 1994-04-07 |
EP0240843A2 (en) | 1987-10-14 |
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