KR870009255A - 감광성 조성물 - Google Patents

감광성 조성물 Download PDF

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Publication number
KR870009255A
KR870009255A KR870002905A KR870002905A KR870009255A KR 870009255 A KR870009255 A KR 870009255A KR 870002905 A KR870002905 A KR 870002905A KR 870002905 A KR870002905 A KR 870002905A KR 870009255 A KR870009255 A KR 870009255A
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South Korea
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group
structural unit
general formula
following general
unit represented
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KR870002905A
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English (en)
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KR900005417B1 (ko
Inventor
야스노부 오니스
루미코 호리구치
슈지 하야세
Original Assignee
와타리 스기이치로
가부시키 가이샤 도시바
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Publication of KR870009255A publication Critical patent/KR870009255A/ko
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Publication of KR900005417B1 publication Critical patent/KR900005417B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

감광성 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 다음 일반식(Ⅰ) 또는 (Ⅱ)로 표시되는 구조단 위와 다음 일반식(Ⅲ)으로 표시되는 구조단위를 갖는 중합체를 함유하는 수지와 감광성 화합물로서 이루어지되, 상기 수지의 평균분자량은 10 내지 10이며, 상기 수지중에 다음 일반시식(Ⅰ) 또는 (Ⅱ)로 표시되는 구조단위와 다음 일반식(Ⅲ)로 표시되는 구조단위를 함유하는 중합체의 함량이 10내지 100중량％인 것임을 특징으로 하는 감광성 조성물
    (단, 윗식에서 R1,R2,R3,R4및 R5는 동일하거나 다를수도 있으며, 이들은 각각 수소원자, 할로겐원자, 알킬기, 카르복실기, 아킬카르복실기, 알콕시카르복실기, 알콕시기, 아실록시기, 아릴기, 아릴기, 히드록시기, 할로겐알킬기, 시아노알칼기 또는 알콜시알콜기를 나타내며, R6는 수소원자, 알킬기, 아릴기, 알릴기, 알킬카르복실기, 아릴카르복실기 또는 퀴논디아지드설포닐기를 나타낸다.)
    (단, 윗식에서 R7,R8,R9,R10및 R11은 동일하거나 다를수 있으며, 이들은 각각 수소원자, 할로겐원자, 알킬기, 카르복실기, 알킬카르복실기, 알콕시카르복실기, 알콕시기, 아실록시기, 아릴기, 알릴기, 히드록시기 할로겐알킬기, 시아노알킬기 또는 알콕시알킬기를 나타낸다.)
  2. 제1항에 있어서, 상기 감광성 조성물에 있어서 감광성 화합물의, 비율이 0.1-50중량％인 것을 특징으로 하는 감광성 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870002905A 1986-03-28 1987-03-28 감광성 조성물 KR900005417B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61068803A JPS62227143A (ja) 1986-03-28 1986-03-28 感光性組成物
JP68803 1986-03-28

Publications (2)

Publication Number Publication Date
KR870009255A true KR870009255A (ko) 1987-10-24
KR900005417B1 KR900005417B1 (ko) 1990-07-30

Family

ID=13384239

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870002905A KR900005417B1 (ko) 1986-03-28 1987-03-28 감광성 조성물

Country Status (5)

Country Link
US (1) US4828958A (ko)
EP (1) EP0240843B1 (ko)
JP (1) JPS62227143A (ko)
KR (1) KR900005417B1 (ko)
DE (1) DE3789154T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020092726A (ko) * 2001-06-05 2002-12-12 주식회사 동진쎄미켐 포지티브 포토레지스트 조성물

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307752B1 (en) * 1987-09-16 1995-02-22 Hoechst Aktiengesellschaft Poly(3-mono- and 3,5-disubstituted-4-acetoxystyrenes and 4-hydroxy-styrenes)and their use
JP2567282B2 (ja) * 1989-10-02 1996-12-25 日本ゼオン株式会社 ポジ型レジスト組成物
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
US5198517A (en) * 1991-08-06 1993-03-30 Eastman Kodak Company Polymeric scavengers for oxidized developing agents and photographic elements containing the same
DE69218393T2 (de) * 1991-12-16 1997-10-16 Matsushita Electric Ind Co Ltd Resistmaterial
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
US5340687A (en) * 1992-05-06 1994-08-23 Ocg Microelectronic Materials, Inc. Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
TW288112B (ko) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
US5853953A (en) * 1996-09-06 1998-12-29 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
TWI751064B (zh) 2021-03-29 2021-12-21 長春人造樹脂廠股份有限公司 多元酚樹脂、多元酚樹脂之縮水甘油醚及其應用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (ko) * 1972-05-05 1974-11-27
JPS5236043B2 (ko) * 1974-02-21 1977-09-13
JPS6053301B2 (ja) * 1979-08-31 1985-11-25 冨士薬品工業株式会社 ポジ型感光性組成物
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS6017739A (ja) * 1983-07-12 1985-01-29 Cosmo Co Ltd 微細加工用感光性レジスト
JPS6045240A (ja) * 1983-08-23 1985-03-11 Fujitsu Ltd アルカリ現像ネガ型レジスト組成物
JPS60107644A (ja) * 1983-09-16 1985-06-13 フイリツプ　エイ．ハント　ケミカル　コ−ポレ−シヨン 現像しうる水性ネガレジスト組成物
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
US4737437A (en) * 1986-03-27 1988-04-12 East Shore Chemical Co. Light sensitive diazo compound, composition and method of making the composition
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020092726A (ko) * 2001-06-05 2002-12-12 주식회사 동진쎄미켐 포지티브 포토레지스트 조성물

Also Published As

Publication number Publication date
EP0240843B1 (en) 1994-03-02
DE3789154T2 (de) 1994-07-14
JPS62227143A (ja) 1987-10-06
KR900005417B1 (ko) 1990-07-30
EP0240843A3 (en) 1990-06-20
US4828958A (en) 1989-05-09
DE3789154D1 (de) 1994-04-07
EP0240843A2 (en) 1987-10-14

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