DE3789154D1 - Photoempfindliche Zusammensetzung, Herstellungs- und Anwendungsverfahren. - Google Patents

Photoempfindliche Zusammensetzung, Herstellungs- und Anwendungsverfahren.

Info

Publication number
DE3789154D1
DE3789154D1 DE87104399T DE3789154T DE3789154D1 DE 3789154 D1 DE3789154 D1 DE 3789154D1 DE 87104399 T DE87104399 T DE 87104399T DE 3789154 T DE3789154 T DE 3789154T DE 3789154 D1 DE3789154 D1 DE 3789154D1
Authority
DE
Germany
Prior art keywords
manufacturing
photosensitive composition
application methods
methods
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87104399T
Other languages
English (en)
Other versions
DE3789154T2 (de
Inventor
Shuzi Hayase
Yasunobu G- Tomiokaseas Onishi
Rumiko Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3789154D1 publication Critical patent/DE3789154D1/de
Publication of DE3789154T2 publication Critical patent/DE3789154T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE3789154T 1986-03-28 1987-03-25 Photoempfindliche Zusammensetzung, Herstellungs- und Anwendungsverfahren. Expired - Fee Related DE3789154T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61068803A JPS62227143A (ja) 1986-03-28 1986-03-28 感光性組成物

Publications (2)

Publication Number Publication Date
DE3789154D1 true DE3789154D1 (de) 1994-04-07
DE3789154T2 DE3789154T2 (de) 1994-07-14

Family

ID=13384239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789154T Expired - Fee Related DE3789154T2 (de) 1986-03-28 1987-03-25 Photoempfindliche Zusammensetzung, Herstellungs- und Anwendungsverfahren.

Country Status (5)

Country Link
US (1) US4828958A (de)
EP (1) EP0240843B1 (de)
JP (1) JPS62227143A (de)
KR (1) KR900005417B1 (de)
DE (1) DE3789154T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307752B1 (de) * 1987-09-16 1995-02-22 Hoechst Aktiengesellschaft Poly(3-mono oder 3,5-disubstituierte acetoxystyrole) und deren Verwendung
JP2567282B2 (ja) * 1989-10-02 1996-12-25 日本ゼオン株式会社 ポジ型レジスト組成物
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
US5198517A (en) * 1991-08-06 1993-03-30 Eastman Kodak Company Polymeric scavengers for oxidized developing agents and photographic elements containing the same
DE69218393T2 (de) * 1991-12-16 1997-10-16 Wako Pure Chem Ind Ltd Resistmaterial
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
US5340687A (en) * 1992-05-06 1994-08-23 Ocg Microelectronic Materials, Inc. Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
TW288112B (de) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
US5853953A (en) * 1996-09-06 1998-12-29 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
KR20020092726A (ko) * 2001-06-05 2002-12-12 주식회사 동진쎄미켐 포지티브 포토레지스트 조성물
TWI751064B (zh) * 2021-03-29 2021-12-21 長春人造樹脂廠股份有限公司 多元酚樹脂、多元酚樹脂之縮水甘油醚及其應用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (de) * 1972-05-05 1974-11-27
JPS5236043B2 (de) * 1974-02-21 1977-09-13
JPS6053301B2 (ja) * 1979-08-31 1985-11-25 冨士薬品工業株式会社 ポジ型感光性組成物
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS6017739A (ja) * 1983-07-12 1985-01-29 Cosmo Co Ltd 微細加工用感光性レジスト
JPS6045240A (ja) * 1983-08-23 1985-03-11 Fujitsu Ltd アルカリ現像ネガ型レジスト組成物
JPS60107644A (ja) * 1983-09-16 1985-06-13 フイリツプ　エイ．ハント　ケミカル　コ−ポレ−シヨン 現像しうる水性ネガレジスト組成物
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
US4737437A (en) * 1986-03-27 1988-04-12 East Shore Chemical Co. Light sensitive diazo compound, composition and method of making the composition
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers

Also Published As

Publication number Publication date
US4828958A (en) 1989-05-09
JPS62227143A (ja) 1987-10-06
EP0240843A2 (de) 1987-10-14
KR870009255A (ko) 1987-10-24
DE3789154T2 (de) 1994-07-14
KR900005417B1 (ko) 1990-07-30
EP0240843B1 (de) 1994-03-02
EP0240843A3 (en) 1990-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee