KR920002721A - 실리콘 레더계 수지 도포액 조성물 - Google Patents

실리콘 레더계 수지 도포액 조성물 Download PDF

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KR920002721A
KR920002721A KR1019910011020A KR910011020A KR920002721A KR 920002721 A KR920002721 A KR 920002721A KR 1019910011020 A KR1019910011020 A KR 1019910011020A KR 910011020 A KR910011020 A KR 910011020A KR 920002721 A KR920002721 A KR 920002721A
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Prior art keywords
based resin
coating liquid
liquid composition
resin coating
silicone
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KR1019910011020A
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KR940009038B1 (ko
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미찌꼬 아이바
히로시 아시다찌
기요시 아시다찌
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시기 모리야
미쓰비시뎅끼 가부시끼가이샤
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Application filed by 시기 모리야, 미쓰비시뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920002721A publication Critical patent/KR920002721A/ko
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • C08L83/06Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • C09D183/06Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312Organic layers, e.g. photoresist

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Paints Or Removers (AREA)
  • Treatment And Processing Of Natural Fur Or Leather (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음.

Description

실리콘 레더계 수지 도포액 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. 일반식
    (식중, R1은 패닐기 또는 저급 알킬기이며, R1은 동종에도 좋고 이종에도 좋다. R2는 수소원자 또는 저급 알킬기이며, R2는 동종에도 좋고 이종에도 좋다. n은 20~1000의 정수를 표시함.)에서 표시되는 실리콘 레더계 수지와 고형분이 5~30wt%에 되도록 가한 방향족계의 유기용제와 수지분에 대하여 150~3000ppm의 실란 커플링제와를 함유하는 실리콘 레더계 수지 도포액 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910011020A 1990-07-03 1991-06-29 실리콘 레더계 수지 도포액 조성물 KR940009038B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-178027 1990-07-03
JP2178027A JP2928341B2 (ja) 1990-07-03 1990-07-03 シリコーンラダー系樹脂塗布液組成物

Publications (2)

Publication Number Publication Date
KR920002721A true KR920002721A (ko) 1992-02-28
KR940009038B1 KR940009038B1 (ko) 1994-09-29

Family

ID=16041307

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Application Number Title Priority Date Filing Date
KR1019910011020A KR940009038B1 (ko) 1990-07-03 1991-06-29 실리콘 레더계 수지 도포액 조성물

Country Status (3)

Country Link
US (1) US5183846A (ko)
JP (1) JP2928341B2 (ko)
KR (1) KR940009038B1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2991786B2 (ja) * 1990-11-22 1999-12-20 三菱電機株式会社 シリコーン樹脂組成物
JP3214186B2 (ja) * 1993-10-07 2001-10-02 三菱電機株式会社 半導体装置の製造方法
JP3403805B2 (ja) * 1994-04-27 2003-05-06 信越化学工業株式会社 電子写真キャリア用コーティング剤及び電子写真用キャリア粒子
US5600151A (en) * 1995-02-13 1997-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin
US5656555A (en) * 1995-02-17 1997-08-12 Texas Instruments Incorporated Modified hydrogen silsesquioxane spin-on glass
JPH08245792A (ja) * 1995-03-10 1996-09-24 Mitsubishi Electric Corp シリコーンラダーポリマー、シリコーンラダープレポリマーおよびそれらの製造方法
US6291628B1 (en) 1998-02-03 2001-09-18 Allied Signal Inc. Solvent systems for low dielectric constant polymeric materials
US6413202B1 (en) 1999-01-21 2002-07-02 Alliedsignal, Inc. Solvent systems for polymeric dielectric materials
JP3543669B2 (ja) * 1999-03-31 2004-07-14 信越化学工業株式会社 絶縁膜形成用塗布液及び絶縁膜の形成方法
US6423772B1 (en) * 1999-07-16 2002-07-23 Institute Of Chemistry, Chinese Academy Of Sciences Organo-bridged ladderlike polysiloxane, tube-like organosilicon polymers, complexes thereof, and the method for producing the same
JP3679972B2 (ja) * 2000-04-04 2005-08-03 三菱電機株式会社 高純度シリコーンラダーポリマーの製造方法
WO2005017058A1 (en) 2003-08-01 2005-02-24 Dow Corning Corporation Silicone based dielectric coatings and films for photovoltaic applications
JP4339267B2 (ja) * 2005-01-27 2009-10-07 関西電力株式会社 高耐熱電力用静止機器
JP2007070600A (ja) * 2005-08-11 2007-03-22 Asahi Kasei Corp 封止材用組成物及び光学デバイス
KR101860710B1 (ko) * 2011-07-27 2018-05-25 삼성전자주식회사 내지문성 코팅 조성물 및 이를 이용한 피막
CN109651931B (zh) * 2019-01-18 2024-02-13 中国工程物理研究院化工材料研究所 一种提升pbx带孔板承载能力的局部涂覆结构及涂覆方法

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* Cited by examiner, † Cited by third party
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JPS5548245A (en) * 1978-10-03 1980-04-05 Toray Silicone Co Ltd Silicone resin composition
JPS5594955A (en) * 1979-01-12 1980-07-18 Hitachi Ltd Film-forming coating solution
JPS58171416A (ja) * 1982-04-02 1983-10-08 Hitachi Ltd 耐熱性重合体
KR900002364B1 (ko) * 1984-05-30 1990-04-12 후지쓰가부시끼가이샤 패턴 형성재의 제조방법
JPS6314749A (ja) * 1986-07-04 1988-01-21 Asahi Chem Ind Co Ltd 芳香族アルデヒドの製造方法
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Also Published As

Publication number Publication date
JP2928341B2 (ja) 1999-08-03
JPH0463883A (ja) 1992-02-28
KR940009038B1 (ko) 1994-09-29
US5183846A (en) 1993-02-02

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