KR930010622A - 네가티브형 레지스터 조성물 - Google Patents

네가티브형 레지스터 조성물 Download PDF

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Publication number
KR930010622A
KR930010622A KR1019920021369A KR920021369A KR930010622A KR 930010622 A KR930010622 A KR 930010622A KR 1019920021369 A KR1019920021369 A KR 1019920021369A KR 920021369 A KR920021369 A KR 920021369A KR 930010622 A KR930010622 A KR 930010622A
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South Korea
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group
carbon atoms
hydrogen atom
alkali
acid
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KR1019920021369A
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KR100241478B1 (ko
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도오루 가지따
에이이찌 고바야시
도시유끼 오오다
다꾸오 미우라
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아사구라 다쓰오
니혼 고오세이 고무 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/11—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
    • C07C37/16—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms by condensation involving hydroxy groups of phenols or alcohols or the ether or mineral ester group derived therefrom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/11—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
    • C07C37/20—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms using aldehydes or ketones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)

Abstract

본 발명은 (A)알칼리 가용성 수지(B)방사선 조사에 의해 산을 발생하는 화합물 및 (C)방향족 고리에 직결한 관능기로서 -OR기(여기에서, R은 치환 메틸기, 치환에틸기, 실릭기, 알콕시카르보닐기 또는 아실기임) 및 -CH₂OX(여기에서, X는 수소원자, 탄소수1-5의 알킬기 또는 상기 R을 정의할 수 있는 것임)을 갖고 산 존재하에서 상기 알칼리 가용성 수지를 가교할 수 있는 방향족 화합물로 이루어진 네가티브형 레지스트 조성물에 관한 것이다.

Description

네가티브형 레지스터 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. (A)알칼리 가용성 수지(B)방사선 조사에 의해 산을 발생하는 화합물, 및 (C)방향족 고리에 직결한 관응기로서 -OR기(여기에서, R은 치환 메틸기, 치환에틸기, 실릴기, 알콕시카르보닐기 또는 아실기임) 및 -CH₂OX(여기에서, X는 수소원자, 탄소수1-5-의 알킬기 또는 상기 R을 정의할 수 있는 것임)을 갖고, 산 존재하에서 상기 알칼리 가용성 수지를 가교할 수 있는 방향족 화합물로 이루어진 네가티브형 레지스트 조성물.
  2. 제1항에 있어서, 하기 구조식(1)로 나타내는 페놀 화합물을 함유하는 네가티브형 레지스트 조성물.
    여기에서 R1∼R8은 수소원자, 탄소수 4이하의 알킬기 및 탄소수 1∼4의 알콕시기에서 선택되는 치환기이고, A는 단일결합,에서 선택되는 결합을 나타내며, 여기서 R9및 R10은 수소원자, 탄소수 4이하의 알킬기, 페닐기 히드록시페닐기에서 선택되는 치환기를 나타내고, R9및 R10이 모두 탄소수 4이하의 알킬기인 경우, 이 알킬기는 서로 단일결합에 의해서 결합되어 있어도 좋다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920021369A 1991-11-15 1992-11-13 네가티브형 레지스트 조성물 KR100241478B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-326748 1991-11-15
JP3326748A JP3016231B2 (ja) 1991-11-15 1991-11-15 ネガ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR930010622A true KR930010622A (ko) 1993-06-22
KR100241478B1 KR100241478B1 (ko) 2000-03-02

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US (1) US5376498A (ko)
EP (1) EP0542572A1 (ko)
JP (1) JP3016231B2 (ko)
KR (1) KR100241478B1 (ko)

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EP0632003B1 (en) * 1993-06-30 1998-01-14 Fuji Photo Film Co., Ltd. Novel phenol compounds containing methoxymethyl group or hydroxymethyl group
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
DE69511141T2 (de) * 1994-03-28 2000-04-20 Wako Pure Chem Ind Ltd Resistzusammensetzung für tiefe Ultraviolettbelichtung
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JP4070393B2 (ja) * 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
JP4990344B2 (ja) * 2009-12-04 2012-08-01 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
WO2011153109A2 (en) * 2010-05-31 2011-12-08 Bridgestone Corporation Hydroxyl group-containing methylstyrene and polymers incorporating same
JP5793399B2 (ja) * 2011-11-04 2015-10-14 富士フイルム株式会社 パターン形成方法及びその方法に用いる架橋層形成用組成物
WO2013129488A1 (ja) 2012-02-28 2013-09-06 株式会社カネカ 塗料組成物および該組成物から得られる塗膜
JP5894106B2 (ja) 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
EP3056552B1 (en) 2013-07-16 2019-02-20 Kaneka Corporation Active energy-ray-curable resin composition for coating organic or inorganic substrate
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CN103836645A (zh) * 2014-03-20 2014-06-04 莱芜钢铁集团有限公司 一种低煤气单耗的烧结点火方法
CN107533290B (zh) 2015-03-30 2021-04-09 三菱瓦斯化学株式会社 抗蚀基材、抗蚀剂组合物及抗蚀图案形成方法
JP6939544B2 (ja) 2015-03-30 2021-09-22 三菱瓦斯化学株式会社 化合物、樹脂、及びそれらの精製方法、リソグラフィー用の下層膜形成材料、下層膜形成用組成物、及び下層膜、並びに、レジストパターン形成方法、及び回路パターン形成方法
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Publication number Publication date
JPH05134412A (ja) 1993-05-28
EP0542572A1 (en) 1993-05-19
JP3016231B2 (ja) 2000-03-06
KR100241478B1 (ko) 2000-03-02
US5376498A (en) 1994-12-27

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