KR930010622A - 네가티브형 레지스터 조성물 - Google Patents
네가티브형 레지스터 조성물 Download PDFInfo
- Publication number
- KR930010622A KR930010622A KR1019920021369A KR920021369A KR930010622A KR 930010622 A KR930010622 A KR 930010622A KR 1019920021369 A KR1019920021369 A KR 1019920021369A KR 920021369 A KR920021369 A KR 920021369A KR 930010622 A KR930010622 A KR 930010622A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- carbon atoms
- hydrogen atom
- alkali
- acid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
- C07C37/11—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
- C07C37/16—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms by condensation involving hydroxy groups of phenols or alcohols or the ether or mineral ester group derived therefrom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
- C07C37/11—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
- C07C37/20—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms using aldehydes or ketones
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
Abstract
본 발명은 (A)알칼리 가용성 수지(B)방사선 조사에 의해 산을 발생하는 화합물 및 (C)방향족 고리에 직결한 관능기로서 -OR기(여기에서, R은 치환 메틸기, 치환에틸기, 실릭기, 알콕시카르보닐기 또는 아실기임) 및 -CH₂OX(여기에서, X는 수소원자, 탄소수1-5의 알킬기 또는 상기 R을 정의할 수 있는 것임)을 갖고 산 존재하에서 상기 알칼리 가용성 수지를 가교할 수 있는 방향족 화합물로 이루어진 네가티브형 레지스트 조성물에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (2)
- (A)알칼리 가용성 수지(B)방사선 조사에 의해 산을 발생하는 화합물, 및 (C)방향족 고리에 직결한 관응기로서 -OR기(여기에서, R은 치환 메틸기, 치환에틸기, 실릴기, 알콕시카르보닐기 또는 아실기임) 및 -CH₂OX(여기에서, X는 수소원자, 탄소수1-5-의 알킬기 또는 상기 R을 정의할 수 있는 것임)을 갖고, 산 존재하에서 상기 알칼리 가용성 수지를 가교할 수 있는 방향족 화합물로 이루어진 네가티브형 레지스트 조성물.
- 제1항에 있어서, 하기 구조식(1)로 나타내는 페놀 화합물을 함유하는 네가티브형 레지스트 조성물.여기에서 R1∼R8은 수소원자, 탄소수 4이하의 알킬기 및 탄소수 1∼4의 알콕시기에서 선택되는 치환기이고, A는 단일결합,에서 선택되는 결합을 나타내며, 여기서 R9및 R10은 수소원자, 탄소수 4이하의 알킬기, 페닐기 히드록시페닐기에서 선택되는 치환기를 나타내고, R9및 R10이 모두 탄소수 4이하의 알킬기인 경우, 이 알킬기는 서로 단일결합에 의해서 결합되어 있어도 좋다.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP91-326748 | 1991-11-15 | ||
JP3326748A JP3016231B2 (ja) | 1991-11-15 | 1991-11-15 | ネガ型レジスト組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930010622A true KR930010622A (ko) | 1993-06-22 |
KR100241478B1 KR100241478B1 (ko) | 2000-03-02 |
Family
ID=18191243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920021369A KR100241478B1 (ko) | 1991-11-15 | 1992-11-13 | 네가티브형 레지스트 조성물 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5376498A (ko) |
EP (1) | EP0542572A1 (ko) |
JP (1) | JP3016231B2 (ko) |
KR (1) | KR100241478B1 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2782150B2 (ja) * | 1992-07-15 | 1998-07-30 | 松下電器産業株式会社 | 新規なネガ型レジスト材料及びパタ−ン形成方法 |
JPH075687A (ja) * | 1993-06-18 | 1995-01-10 | Mitsui Toatsu Chem Inc | 液状エッチングレジスト及びエッチングレジスト被膜を形成した銅張り積層板 |
DE69407879T2 (de) * | 1993-06-30 | 1998-04-30 | Fuji Photo Film Co Ltd | Phenolverbindungen, die Methoxymethylgruppen oder Hydroxymethylgruppen enthalten |
KR960015081A (ko) * | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
EP0675410B1 (en) * | 1994-03-28 | 1999-08-04 | Wako Pure Chemical Industries Ltd | Resist composition for deep ultraviolet light |
TW332264B (en) * | 1994-09-07 | 1998-05-21 | Mitsubishi Chem Corp | Photosensitive resin composition and method for forming a photoresist pattern |
US5547812A (en) * | 1995-06-05 | 1996-08-20 | International Business Machines Corporation | Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer |
US5609989A (en) * | 1995-06-06 | 1997-03-11 | International Business Machines, Corporation | Acid scavengers for use in chemically amplified photoresists |
JP3433017B2 (ja) * | 1995-08-31 | 2003-08-04 | 株式会社東芝 | 感光性組成物 |
US6132935A (en) * | 1995-12-19 | 2000-10-17 | Fuji Photo Film Co., Ltd. | Negative-working image recording material |
JP3627465B2 (ja) | 1997-08-15 | 2005-03-09 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP3929653B2 (ja) | 1999-08-11 | 2007-06-13 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
JP4070393B2 (ja) * | 2000-01-17 | 2008-04-02 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
JP4990344B2 (ja) * | 2009-12-04 | 2012-08-01 | 富士フイルム株式会社 | ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
RU2573636C2 (ru) * | 2010-05-31 | 2016-01-27 | Бриджстоун Корпорейшн | Содержащий гидроксильные группы метилстирол и полимеры на его основе |
JP5793399B2 (ja) * | 2011-11-04 | 2015-10-14 | 富士フイルム株式会社 | パターン形成方法及びその方法に用いる架橋層形成用組成物 |
MY167572A (en) | 2012-02-28 | 2018-09-20 | Kaneka Corp | Coating composition and coating film obtained from coating composition |
JP5894106B2 (ja) | 2012-06-18 | 2016-03-23 | 信越化学工業株式会社 | レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法 |
WO2015008777A1 (ja) | 2013-07-16 | 2015-01-22 | 株式会社カネカ | 有機・無機基材被覆用活性エネルギー線硬化性樹脂組成物 |
JP6313604B2 (ja) * | 2014-02-05 | 2018-04-18 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法 |
CN103836645A (zh) * | 2014-03-20 | 2014-06-04 | 莱芜钢铁集团有限公司 | 一种低煤气单耗的烧结点火方法 |
CN107533290B (zh) | 2015-03-30 | 2021-04-09 | 三菱瓦斯化学株式会社 | 抗蚀基材、抗蚀剂组合物及抗蚀图案形成方法 |
US10747112B2 (en) | 2015-03-30 | 2020-08-18 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method |
US20230416460A1 (en) * | 2021-03-31 | 2023-12-28 | Tdk Corporation | Compound, resin composition, resin sheet, resin cured product, and laminated substrate |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE436174C (de) * | 1925-12-12 | 1926-11-02 | Messgeraete Boykow G M B H | Kreiselantrieb |
US4931381A (en) * | 1985-08-12 | 1990-06-05 | Hoechst Celanese Corporation | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment |
US4929536A (en) * | 1985-08-12 | 1990-05-29 | Hoechst Celanese Corporation | Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing |
US5217840A (en) * | 1985-08-12 | 1993-06-08 | Hoechst Celanese Corporation | Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom |
JPH01501176A (ja) * | 1986-10-20 | 1989-04-20 | マクダーミッド,インコーポレーテッド | 像反転可能なシステム及びプロセス |
KR900005226A (ko) * | 1988-09-29 | 1990-04-13 | 윌리엄 비이 해리스 | 감광성 조성물 및 양화 상과 음화 상의 생성방법 |
JPH02120366A (ja) * | 1988-10-31 | 1990-05-08 | Hitachi Ltd | 放射線感応性組成物およびそれを用いたパターン形成法 |
JPH02170165A (ja) * | 1988-12-23 | 1990-06-29 | Hitachi Ltd | 放射線感応性組成物及びそれを用いたパターン形成法 |
DE3943413A1 (de) * | 1989-12-30 | 1991-07-04 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefstrukturen |
-
1991
- 1991-11-15 JP JP3326748A patent/JP3016231B2/ja not_active Expired - Lifetime
-
1992
- 1992-11-13 EP EP92310396A patent/EP0542572A1/en not_active Withdrawn
- 1992-11-13 KR KR1019920021369A patent/KR100241478B1/ko not_active IP Right Cessation
- 1992-11-13 US US07/975,713 patent/US5376498A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5376498A (en) | 1994-12-27 |
JPH05134412A (ja) | 1993-05-28 |
EP0542572A1 (en) | 1993-05-19 |
JP3016231B2 (ja) | 2000-03-06 |
KR100241478B1 (ko) | 2000-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930010622A (ko) | 네가티브형 레지스터 조성물 | |
KR880007589A (ko) | 다기능(Multifunctional)에폭시드 수지 | |
KR890013143A (ko) | 도로용 수지조성물 | |
KR910016817A (ko) | Uv경화성 에폭시 실리콘 | |
KR970074845A (ko) | 유기물질에 대한 안정화제인 폴리알킬피페리딘-4-일 디카르복시산 에스테르의 혼합물 | |
KR920015158A (ko) | 네거티브 포토레지스트 조성물 | |
KR920002721A (ko) | 실리콘 레더계 수지 도포액 조성물 | |
KR920001243A (ko) | 포지티브 감 방사선성 레지스트 조성물 | |
KR910000896A (ko) | 성형가능한 혼련된 수지 조성물 | |
KR920701869A (ko) | 포지티브 레지스트 조성물 | |
KR900004820A (ko) | 안정화된 합성수지조성물 | |
KR880014002A (ko) | 에폭시화합물 및 그를 함유하는 에폭시 수지 조성물 | |
KR880004031A (ko) | 저장 안정성이 양호한 수지 조성물 | |
KR900002125A (ko) | 내식막 조성물 | |
KR920702890A (ko) | 포지티브 레지스트 조성물 | |
KR920012302A (ko) | 일 액형 열 경화성 오르가노폴리실록산 조성물 | |
KR960038487A (ko) | 파지티브 포토레지스트 조성물 | |
KR920018040A (ko) | 다가 페놀 화합물 및 그것을 함유하는 포지티브 레지스트 조성물 | |
KR840003851A (ko) | 광 저항 조성물 | |
KR950023690A (ko) | 클로로프렌 고무계 접착제 | |
KR930004806A (ko) | 포지티브 레지스트 조성물 | |
KR920001242A (ko) | 포지티브 레지스트 조성물 | |
KR960001890A (ko) | 폴리히드록시 화합물 및 이를 함유하는 포지티브레지스트 조성물 | |
KR960029359A (ko) | 산-분해성 보호 그룹을 갖는 페놀 수지 | |
KR920009772A (ko) | 트리아릴메탄 화합물 및 압력 민감성 기록재료 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121023 Year of fee payment: 14 |
|
EXPY | Expiration of term |