KR950001415A - 포토레지스트 조성물 - Google Patents

포토레지스트 조성물 Download PDF

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Publication number
KR950001415A
KR950001415A KR1019940012180A KR19940012180A KR950001415A KR 950001415 A KR950001415 A KR 950001415A KR 1019940012180 A KR1019940012180 A KR 1019940012180A KR 19940012180 A KR19940012180 A KR 19940012180A KR 950001415 A KR950001415 A KR 950001415A
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KR
South Korea
Prior art keywords
photoresist composition
alkylether
alkyl
optionally substituted
aryl group
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KR1019940012180A
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English (en)
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KR100354680B1 (ko
Inventor
유꼬 나까노
나오끼 다께야마
유우지 우에다
다께히로 구스모또
히로미 오까
Original Assignee
고오사이 아끼오
스미또모가가꾸고오교 가부시끼가이샤
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Publication of KR950001415A publication Critical patent/KR950001415A/ko
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Publication of KR100354680B1 publication Critical patent/KR100354680B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/124—Carbonyl compound containing
    • Y10S430/125—Carbonyl in heterocyclic compound

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

부분 알킬에테르화 폴리비닐페놀 및 알킬에테르화 수소화 폴리비닐페놀로 구성된 군으로부터 선택된 1 이상의 수지를 함유하는 알칼리 용해성 수지, 1종류 이상의 N-히드록시이미드 화합물의 술폰산 에스테르를 함유하는 광 유도산 전구체 및 가교 결합제 또는 용해 저해제를 함유함을 특징으로 하는 네가티브 또는 포지티브 포토레지스트 조성물, 및 상기 포토레지스트 조성물은 내열성, 필름 두께 유지도, 피복성, 단면형 등과 같은 다양한 성질에서 현저하며 또한 광원으로서 엑시머 레이저를 포함하는 원자외선 광을 사용하는 경우, 고감도 및 고분해를 나타낸다. 또한 현상 과정동안 거의 스캠을 남기지 않는다.

Description

포토레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. (A) 부분 알킬에테르화 폴리비닐페놀 및 부분 알킬에테르화 수소화 폴리비닐페놀로 구성된 군에서 선택된 1 이상의 수지를 함유하는 알칼리 용해서 수지; (B) 1종류 이상의 N-히드록시아미드 화합물의 술폰산 에스테르를 함유하는 광 유도산 전구체; 및 (C) 가교 결합제를 함유함을 특징으로 하는 네가티브 포토레지스트 조성물.
  2. 제1항에 있어서, 알칼리 용해성 수지가 알킬에테르화의 비가 10-35%인 부분 알킬에테르화 폴리(p- 비닐페놀)인 네가티브 포토레지스트 조성물.
  3. 제1항에 있어서, 알칼리 용해성 수지가 알킬에테르화의 비가 5-30%인 부분 알킬에테르화 수소화 폴리비닐페놀인 네가티브 포토레지스트 조성물.
  4. 제1항에 있어서, N-히드록시아미드 화합물의 술폰산 에스테르가 하기 일반식(Ⅰ)로 나타내는 화합물임을 특징으로 하는 네가티브 포토레지스트 조성물;
    (상기식에서 R1은 임의로 치환된 아릴렌, 알킬렌 또는 알케닐렌기이고 R2은 임의로 치환된 알킬 또는 아릴기이다).
  5. 제4항에 있어서, R2은 임의로 치환된 알킬 또는 아릴기임을 특징으로 하는 네가티브 포토레지스트 조성물(단, R2이 치환된 알킬 또는 아릴기인 경우, 그의 치환기는 불소 원자가 아니다).
  6. (A) 부분 알킬에테르화 폴리비닐페놀 및 부분 알킬에테르화 수소화 폴리비닐페놀로 구성된 군에서 선택된 1 이상의 수지를 함유하는 알칼리 용해성 수지; (B) 1종류 이상의 N-히드록시아미드 화합물의 술폰산 에스테르를 함유하는 광 유도산 전구체; 및 (D) 용해 저해제를 함유함을 특징으로 하는 포지티브 포토레지스트 조성물.
  7. 제6항에 있어서, 알칼리 용해성 수지가 알킬에테르화의 비가 10-35%인 부분 알킬에테르화 폴리(p- 비닐페놀)인 특징으로 하는 포지티브 포토레지스트 조성물.
  8. 제6항에 있어서, 알칼리 용해성 수지가 알킬에테르화의 비가 5-30%인 부분 알킬에테르화 수소화 폴리비닐페놀임을 특징으로 하는 포지티브 포토레지스트 조성물.
  9. 제6항에 있어서, N-히드록시아미드 화합물의 술폰산 에스테르가 하기 일반식(Ⅰ)로 나타내는 화합물임을 특징으로 하는 포지티브 포토레지스트 조성물;
    (상기식에서 R1은 임의로 치환된 아릴렌, 알킬렌 또는 알케닐렌기이고 R2은 임의로 치환된 알킬 또는 아릴기이다).
  10. 제9항에 있어서, R2은 임의로 치환된 알킬 또는 아릴기임을 특징으로 하는 포지티브 포토레지스트 조성물(단, R2이 치환된 알킬 또는 아릴기인 경우, 그의 치환기는 불소 원자가 아니다).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940012180A 1993-06-02 1994-05-31 포토레지스트조성물 KR100354680B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP93-131986 1993-06-02
JP13198693 1993-06-02
JP3366094 1994-03-03
JP94-033660 1994-03-03

Publications (2)

Publication Number Publication Date
KR950001415A true KR950001415A (ko) 1995-01-03
KR100354680B1 KR100354680B1 (ko) 2003-03-19

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Country Link
US (1) US5585218A (ko)
EP (1) EP0632327B1 (ko)
KR (1) KR100354680B1 (ko)
CA (1) CA2124667A1 (ko)
DE (1) DE69425786T2 (ko)
TW (1) TW288112B (ko)

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Publication number Publication date
US5585218A (en) 1996-12-17
DE69425786D1 (de) 2000-10-12
TW288112B (ko) 1996-10-11
KR100354680B1 (ko) 2003-03-19
EP0632327B1 (en) 2000-09-06
DE69425786T2 (de) 2001-01-25
CA2124667A1 (en) 1994-12-03
EP0632327A1 (en) 1995-01-04

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