KR940012049A - 교차결합된 또는 경화된 레지스트 수지로 금속부식을 감소시키는 알칼리함유 포토레지스트 스트리핑 조성물 - Google Patents

교차결합된 또는 경화된 레지스트 수지로 금속부식을 감소시키는 알칼리함유 포토레지스트 스트리핑 조성물 Download PDF

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KR940012049A
KR940012049A KR1019930023214A KR930023214A KR940012049A KR 940012049 A KR940012049 A KR 940012049A KR 1019930023214 A KR1019930023214 A KR 1019930023214A KR 930023214 A KR930023214 A KR 930023214A KR 940012049 A KR940012049 A KR 940012049A
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stripping
composition
stripping composition
alkali
acid
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KR1019930023214A
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KR100297893B1 (ko
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슈바르쯔코프 게오르게
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안토니 피에르죠반니 쥬니어
제이. 티. 베이커 인코오퍼레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

포토레지스트에 대하 아민함유 알칼리 스트리퍼에 질소 무함유 약산을 부가시키는 것은 어떠한 실질적인 금속부식을 일으키지 않고 고도로 교차결합되거나 경화된 포토레지스트 필름을 스트리핑할 수 있는 스트리퍼 조성물을 제공한다. 스트리핑 조성물에 유용한 약산은 2.0 또는 그 이상의 수용액중의 pK와 약140미만의 당량을 갖는 것들을 포함하며 스트리퍼 조성물중에 존재하는 아민의 약 19％내지 약 75％를 중화시키는 양으로 사용된다.

Description

교차결합된 또는 경화된 레지스트 수지로 금속부식을 감소시키는 알칼리함유 포토레지스트 스트리핑 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 스트리핑 용매, 구핵성 아민 및 구핵성 아민을 부분적으로 중화시키기에 충분한 양으로 질소 무함유 약산으로 이루어지며, 이로써 어떠한 실질적인 금속 부식을 일으키지 않으면서 금속함유 기판으로부터 경화된 또는 고도로 교차결합된 포토레지스트 수지 필름을 스트리핑 할수 있는 것을 특징으로 하는 알칼리함유 포토레지스트스트리핑 조성물.
  2. 제1항에 있어서, 스트리핑 용매는 약 8 내지 약 15의용해도 파라미터를 가지는 스트리핑 용매 시스템이고 스트리핑 조성물의 약 50중량％ 내지 약 98％의 양중에 존재하며 ; 구핵성 아민은 스트리핑 조성물의 약 1 내지 50중량％의 양으로존재하고 ; 수성요액중에서 약산은 2.0 또는 그 이상의 수용액중의 pK값과 140이하의 당량을 가지며 스트리핑 조성물이 약 pH9.6 내지 약10. 9범위이내의 수성 pH를 갖도록 구핵성 아민의 약 19중량％ 내지 약 75중량％를 중화시키기에 충분한 상기 스트리핑 조성물의 약 0.05 중량%내지 약 25중량％의 양으로 스트리핑조성물중에 존재하는 것을 특징으로 하는 아칼리함유 포토레지스트 스트리핑 조성물.
  3. 제1항 또는 제2항에 있어서, 약산은 2.5 또는 그 이상의 pK를 가지며 아세트산, 프달산, 2-메르캅토벤조산, 2-메르캅토에탄올, 1, 3, 5-트리히드록시??젠, 피로갈롤, 리조르시놀, 4-tert-부틸카네콜, 탄산 및 플루오르화수소산으로 굿어되는 군으로부터 선택되고, 아민은 1-아미노-2-프로판올, 2-(2-아미노에톡시) 에탄올, 2-아미노에탄올, 2-(아미노에틸아미노) 에탄올 및 2-(2-아미노에틸아미노) 에틸아민으로 구성되는 군으로부터 선택되는 것을 특징으로 하는 알칼리 함유 포토레지스트 스트리핑 조성물.
  4. 제1항, 제2항 또는 제3항중의 어느 한항에 이써서, 스트리핑 용매가 2-피롤디논, 1-메틸-2-피롤리디논, 1-에틸-2-피롤리디논, 1-프로필-2-피롤리디논, 1-히드록시에틸-2-피롤리디논, 1-히드록시프로필-2-피롤리디논, 식 HOCH2CH2-O-R (여기서 R은 1 내지4탄소원자의 알킬라디칼 )의 디에틸렌 클리콜모노알킬 에테르, 식(여기서 R1및 R2는 1 내지 4탄소원자의 알킬)의 디알킬술폰, 디메틸술폭시드, 식
    (여기서 R1은 수소, 메틸 또는 에틸)의 테트라히드로티오펜-1, 1-디옥사이드 화합물, 폴리에틸렌 글리콜, 디메틸아세트아미드 및 다메틸 포름아미드로 구성되는군으로 부터 선택된 하나 또는 그 이상의 용매로 이루어진 것을 특징으로 하는 알칼리 함유 포토레지스트 스트리핑 조성물.
  5. 제1항, 제2항, 제3항, 또는 제4항중의 어느 하나에 있어서, 상기조성물이 중량기준으 N-메틸피롤리디논 약 50중량％ 내지 약 98중량%, 1-아미노-2-푸로판올, 2-(2-아미노에톡시)에탄올 및 2-아미노에탄올로부터 선택된 아민 1내지 약50중량％, 스트리핑 조성물이 약 pH9.6 내지 약 10.9의 범위내에 수성pH를 갖도록 아민을 중화시키는 양으로 존재하는 아시트산 약 0.5％내지 약 25％로 이루어지는 것을 특징으로 하는 알칼리함유 포토레지스트 스트리핑 조성물.
  6. 포토레지스트 스트리핑 조성물이 있는 기판으로부터 고도로 교차결합되거나 경화된 포토레지스트 수지를 스트리핑 하는 방법에 있어서, 제1항, 제2항, 제3항, 제4항 또는 제5항중의 어느 한 항에 따른 알칼리함유 포토레지스트 스트리핑 조성물을 사용하는 것으로 이루어지는 것을 특징으로 하는 스트리핑 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930023214A 1992-11-06 1993-11-03 교차결합된또는경화된레지스트수지를가진금속의부식을감소시키는알칼리함유포토레지스트스트리핑조성물 KR100297893B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/972,511 US5308745A (en) 1992-11-06 1992-11-06 Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US07/972,511 1992-11-06

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KR940012049A true KR940012049A (ko) 1994-06-22
KR100297893B1 KR100297893B1 (ko) 2001-11-22

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US (1) US5308745A (ko)
EP (1) EP0596515B1 (ko)
JP (1) JP2683729B2 (ko)
KR (1) KR100297893B1 (ko)
CA (1) CA2106750C (ko)
DE (1) DE69314279T2 (ko)
IL (1) IL107263A (ko)
TW (1) TW338120B (ko)

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US5308745A (en) 1994-05-03
DE69314279D1 (de) 1997-11-06
CA2106750A1 (en) 1994-05-07
KR100297893B1 (ko) 2001-11-22
CA2106750C (en) 1999-03-30
JPH06202345A (ja) 1994-07-22
DE69314279T2 (de) 1998-05-07
IL107263A0 (en) 1994-01-25
IL107263A (en) 1998-02-22
TW338120B (ko) 1998-08-11
EP0596515B1 (en) 1997-10-01
EP0596515A1 (en) 1994-05-11

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