US6159663A - Method of creating a solderable metal layer on glass or ceramic - Google Patents
Method of creating a solderable metal layer on glass or ceramic Download PDFInfo
- Publication number
- US6159663A US6159663A US09/107,475 US10747598A US6159663A US 6159663 A US6159663 A US 6159663A US 10747598 A US10747598 A US 10747598A US 6159663 A US6159663 A US 6159663A
- Authority
- US
- United States
- Prior art keywords
- containing mixture
- aluminum containing
- mixture surface
- remaining
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 37
- 239000002184 metal Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000919 ceramic Substances 0.000 title claims abstract description 25
- 239000011521 glass Substances 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 128
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 128
- 239000000203 mixture Substances 0.000 claims abstract description 78
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 76
- 238000005260 corrosion Methods 0.000 claims abstract description 31
- 230000007797 corrosion Effects 0.000 claims abstract description 31
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 16
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 8
- 238000007740 vapor deposition Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 239000011324 bead Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims 7
- 229910001369 Brass Inorganic materials 0.000 claims 4
- 239000010951 brass Substances 0.000 claims 4
- 238000007772 electroless plating Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
Definitions
- the invention relates to a method of creating a solderable metal layer on a ceramic, glass, or glass ceramic member.
- a layer of an aluminum containing mixture is deposited on the ceramic, glass, or glass ceramic member by ion vapor deposition creating a metalized ceramic member.
- the aluminum containing mixture is cleaned, dried, and heated and a photoresist is placed on the aluminum.
- a photomask is place on the photoresist and the exposed portions of the photoresist are exposed to a light source.
- the photomask is removed and the portions of the photoresist that were exposed to the light source is stripped off to selectively expose the underlying aluminum containing mixture.
- the selectively exposed aluminum containing mixture is removed with an aluminum etchant exposing the underlying ceramic, glass, or glass ceramic member.
- the remaining portions of the photoresist are stripped off exposing the remaining aluminum containing mixture.
- the remaining aluminum containing mixture is plated with a metal corrosion barrier.
- the metal corrosion barrier is then plated with a solderable layer.
- the resulting structure provides solderable and adherent metal layers with high ductility and high electrical and thermal conductivities.
- Devices fabricated using the disclosed method are required by modern microelectronics packages consisting of discrete semiconductor power devices or power modules having multiple semiconductor power devices. There are myriad applications for devices fabricated with the disclosed method such as lid arrays for discrete power devices and thermal bases of multi power device modules.
- Such devices improve the cost, performance, yield, and reliability of metalized ceramic members.
- FIG. 1 is a flow chart indicating the steps for creating a solderable layer on aluminum deposited on a ceramic, glass, or glass ceramic member.
- FIG. 1 shows the steps required to perform the invention in one embodiment of the invention.
- a ceramic member is coated with a layer of aluminum by ion vapor deposition.
- the aluminum layer is typically 2 mils to 2.5 mils thick in order to be able to carry the required electrical current, for example in a microelectronics package.
- the aluminum layer mixture could also have a thickness of at least 2 mils in other examples.
- the aluminum layer is then cleaned, heated, and dried to ensure proper application of the photoresist to the aluminum layer.
- the aluminum is cleaned with a cleanser and scrub brush to remove aluminum oxide.
- the aluminum is then rinsed with water. This cleaning and rinsing is repeated until the water ceases to bead on the aluminum surface indicating that the aluminum oxide has been removed. Removal of aluminum oxide is important to maximize the free energy of the aluminum surface to assure proper wetting and bonding of the photoresist.
- the aluminum is then dried to prevent the formation of water spots or the aluminum surface and then heated at 75° C. for approximately 15 minutes to ensure even heating across the aluminum surface in preparation for the application of a photoresist.
- a photoresist such as a dry film photoresist approximately 1.5 mils thick, can be applied to the aluminum layer.
- the dry film photoresist could be applied to the aluminum layer at a pressure greater than atmospheric pressure.
- a photomask is applied on the photoresist to mask selected portions of the exposed surface of the photoresist film.
- the aluminum-layered ceramic member with the photoresist and photomask is exposed to a negative pressure of at least 20 in. Hg to ensure that the photomask is tightly held to the photoresist. While maintaining the negative pressure of at least 20 in. Hg., the unmasked portions of the photoresist are exposed to an ultraviolet ("UV") light source until a light intensity of 30 light units (3,000 lumens) is achieved. After exposure of the unmasked portions of the photoresist to a UV light source, the negative pressure is removed and the photomask is separated from the photoresist.
- UV ultraviolet
- the photoresist is then hard baked by heating the photoresist at 95° C. ⁇ 3° C. for approximately 30 minutes.
- This hard baking is essential to increase the toughness and the chemical resistance of the portions of the photoresist that were not exposed to the UV light source so that the non UV-exposed portions of the photoresist can withstand the abrasiveness of the aluminum etchant.
- the non UV-exposed portions of the photoresist may be degraded by the aluminum etchant acids thereby causing unwanted removal of the aluminum layer under the non UV-exposed photoresist.
- the portions of the photoresist that were exposed to the UV light source are removed by immersion in an aqueous developing solution until the UV-exposed photoresist is removed, approximately 2 to 3 minutes in duration.
- the exposed aluminum layer is etched with an aluminum etchant consisting of phosphoric acid, nitric acid, and acetic acid for approximately 45 minutes, depending on the thickness of the aluminum layer, to selectively remove the aluminum to expose the ceramic member.
- an aluminum etchant consisting of phosphoric acid, nitric acid, and acetic acid for approximately 45 minutes, depending on the thickness of the aluminum layer, to selectively remove the aluminum to expose the ceramic member.
- spray etching of the aluminum layer is preferred to immersion etching to minimize undercut removal of the aluminum layer under the non UV-exposed photoresist.
- the exposed ceramic member is then rinsed with water to remove any excess etchant. When spray etching is utilized the exposed surface of the member could be rinsed in water for at least two minutes.
- the remaining photoresist is removed by immersing the photoresist into an alkaline photoresist stripping solution for approximately five minutes to expose the remaining aluminum.
- the remaining aluminum is then cleaned and dried in a similar fashion as during preparation for applying the photoresist.
- the remaining aluminum is cleaned with a cleanser and scrub brush to remove aluminum oxide.
- the remaining aluminum is then rinsed with water. This cleaning and rinsing is repeated until the water ceases to bead on the remaining aluminum surface indicating that the aluminum oxide has been removed. Removal of aluminum oxide is important to maximize the free energy of the remaining aluminum surface to assure proper deposition of a metallic corrosion inhibiting layer.
- the remaining aluminum is then dried to prevent the formation of water spots on the remaining aluminum surface and then cleaned with acetone to remove any remaining residue from the remaining aluminum surface. The cleaning with acetone could also be in an agitated bath of acetone for 3 minutes.
- the remaining aluminum is then inserted in an agitated acid bath of 3% hydrochloric acid, 3% nitric acid, and 94% demineralized water for approximately 3 minutes to remove any remaining contaminants and to lightly roughen the surface of the remaining aluminum in preparation for plating of a metal corrosion barrier to the surface of the remaining aluminum.
- a metal corrosion barrier is then plated on the remaining aluminum to prevent the aluminum from reacting with a later-applied solderable layer of gold or silver.
- a typical metal corrosion barrier consists of nickel but any metal that does not react with the solderable barrier can be applied.
- One useful method of applying a corrosion barrier of nickel to the remaining aluminum is to immerse the remaining aluminum in an electroless nickel plating solution for approximately 20 minutes. Electroless deposition of the metal corrosion barrier eliminates the need to have the remaining aluminum electrically connected. The metal corrosion barrier surface is then rinsed with demineralized water. Demineralized water is used to minimize the occurrence of any residual minerals on the surface of the metal corrosion barrier. The presence of minerals on the metal corrosion barrier will impair the adhesion of the solderable layer to the corrosion barrier. Rinsing with non-demineralized water is acceptable as long as any residual minerals are removed before plating the metal corrosion barrier with the solderable layer.
- a solderable layer is then plated on the metal corrosion barrier.
- a typical solderable layer consists of either gold or silver.
- One useful method of applying a solderable layer of gold to the metal corrosion barrier is to immerse the metal corrosion barrier in an electroless gold plating solution for approximately 30 minutes. Electroless deposition of the solderable layer eliminates the need to have the metal corrosion barrier electrically connected. The solderable layer is rinsed with demineralized water and dried.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/107,475 US6159663A (en) | 1998-06-30 | 1998-06-30 | Method of creating a solderable metal layer on glass or ceramic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/107,475 US6159663A (en) | 1998-06-30 | 1998-06-30 | Method of creating a solderable metal layer on glass or ceramic |
Publications (1)
Publication Number | Publication Date |
---|---|
US6159663A true US6159663A (en) | 2000-12-12 |
Family
ID=22316807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/107,475 Expired - Lifetime US6159663A (en) | 1998-06-30 | 1998-06-30 | Method of creating a solderable metal layer on glass or ceramic |
Country Status (1)
Country | Link |
---|---|
US (1) | US6159663A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040149689A1 (en) * | 2002-12-03 | 2004-08-05 | Xiao-Shan Ning | Method for producing metal/ceramic bonding substrate |
US20040171200A1 (en) * | 2001-05-18 | 2004-09-02 | Akitoshi Maeda | Active matrix substrate for liquid crystal display and its fabrication |
CN103477615A (en) * | 2011-02-18 | 2013-12-25 | Pem管理股份有限公司 | Window glass mounted fastener |
CN106019861A (en) * | 2016-07-04 | 2016-10-12 | 奥士康精密电路(惠州)有限公司 | Method for quick developing of dry film |
CN107889559A (en) * | 2015-04-24 | 2018-04-06 | 阿莫善斯有限公司 | The manufacture method of ceramic substrate and as the ceramic substrate manufactured by it |
CN108398859A (en) * | 2018-05-04 | 2018-08-14 | 中国振华集团云科电子有限公司 | A kind of dry film developing method |
US11044806B2 (en) * | 2017-08-18 | 2021-06-22 | Kinsus Interconnect Technology Corp. | Method for manufacturing multi-layer circuit board capable of being applied with electrical testing |
CN114959624A (en) * | 2021-02-26 | 2022-08-30 | 台湾积体电路制造股份有限公司 | Physical vapor deposition member and method of cleaning an electrostatic chuck |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767398A (en) * | 1971-10-26 | 1973-10-23 | C Morgan | Solid photoresist comprising a polyene and a polythiol |
US4122215A (en) * | 1976-12-27 | 1978-10-24 | Bell Telephone Laboratories, Incorporated | Electroless deposition of nickel on a masked aluminum surface |
US4423137A (en) * | 1980-10-28 | 1983-12-27 | Quixote Corporation | Contact printing and etching method of making high density recording medium |
US5141829A (en) * | 1990-09-10 | 1992-08-25 | General Electric Company | Method of preparing a photo-mask for imaging three-dimensional objects |
US5169680A (en) * | 1987-05-07 | 1992-12-08 | Intel Corporation | Electroless deposition for IC fabrication |
US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
US5358826A (en) * | 1989-04-25 | 1994-10-25 | Cray Research, Inc. | Method of fabricating metallized chip carries from wafer-shaped substrates |
-
1998
- 1998-06-30 US US09/107,475 patent/US6159663A/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767398A (en) * | 1971-10-26 | 1973-10-23 | C Morgan | Solid photoresist comprising a polyene and a polythiol |
US4122215A (en) * | 1976-12-27 | 1978-10-24 | Bell Telephone Laboratories, Incorporated | Electroless deposition of nickel on a masked aluminum surface |
US4423137A (en) * | 1980-10-28 | 1983-12-27 | Quixote Corporation | Contact printing and etching method of making high density recording medium |
US5169680A (en) * | 1987-05-07 | 1992-12-08 | Intel Corporation | Electroless deposition for IC fabrication |
US5358826A (en) * | 1989-04-25 | 1994-10-25 | Cray Research, Inc. | Method of fabricating metallized chip carries from wafer-shaped substrates |
US5141829A (en) * | 1990-09-10 | 1992-08-25 | General Electric Company | Method of preparing a photo-mask for imaging three-dimensional objects |
US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040171200A1 (en) * | 2001-05-18 | 2004-09-02 | Akitoshi Maeda | Active matrix substrate for liquid crystal display and its fabrication |
US7037766B2 (en) * | 2001-05-18 | 2006-05-02 | Nec Lcd Technologies, Inc. | Method of fabricating an active matrix substrate for liquid crystal display utilizing interconnection lines formed from multilayered films that include an aluminum-neodymium alloy layer |
US20040149689A1 (en) * | 2002-12-03 | 2004-08-05 | Xiao-Shan Ning | Method for producing metal/ceramic bonding substrate |
CN103477615A (en) * | 2011-02-18 | 2013-12-25 | Pem管理股份有限公司 | Window glass mounted fastener |
CN107889559A (en) * | 2015-04-24 | 2018-04-06 | 阿莫善斯有限公司 | The manufacture method of ceramic substrate and as the ceramic substrate manufactured by it |
CN107889559B (en) * | 2015-04-24 | 2020-04-28 | 阿莫善斯有限公司 | Method for manufacturing ceramic substrate and ceramic substrate manufactured thereby |
CN106019861A (en) * | 2016-07-04 | 2016-10-12 | 奥士康精密电路(惠州)有限公司 | Method for quick developing of dry film |
US11044806B2 (en) * | 2017-08-18 | 2021-06-22 | Kinsus Interconnect Technology Corp. | Method for manufacturing multi-layer circuit board capable of being applied with electrical testing |
CN108398859A (en) * | 2018-05-04 | 2018-08-14 | 中国振华集团云科电子有限公司 | A kind of dry film developing method |
CN114959624A (en) * | 2021-02-26 | 2022-08-30 | 台湾积体电路制造股份有限公司 | Physical vapor deposition member and method of cleaning an electrostatic chuck |
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