CN108398859A - A kind of dry film developing method - Google Patents
A kind of dry film developing method Download PDFInfo
- Publication number
- CN108398859A CN108398859A CN201810418538.2A CN201810418538A CN108398859A CN 108398859 A CN108398859 A CN 108398859A CN 201810418538 A CN201810418538 A CN 201810418538A CN 108398859 A CN108398859 A CN 108398859A
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- Prior art keywords
- dry film
- substrate
- present
- developing
- cleaned
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a kind of dry film developing methods, include the following steps:(1) dry film developing trough is cleaned up with deionized water;(2) dry film developer is added into dry film developing trough;(3) substrate to be developed is put into the dry film developer, spray impregnates;(4) in developing process, using the slight substrate dry film of the scrub back and forth surface of banister brush;(5) after development terminates, developed substrate is taken out, is cleaned up, and is dried up.The present invention uses the slight influence scrubbed back and forth and reduce batt layer to product of banister brush, by multiple batches of verification, the present invention plays prodigious improvement, the frequency (being reduced to 10% from 60%) that toothed edge occurs, while develop contradictory solution and improved efficiency, throughput rate have obtained apparent improvement.Fixing efficiency (speed is down to 2m/30s by 5m/30s~7m/30s) is increased, therefore the present invention effectively increases development quality, reduces the frequency that jagged edge occurs, increase fixing efficiency.
Description
Technical field
The invention belongs to electronic device manufacturing technology fields, and in particular to a kind of dry film developing method.
Background technology
Dry film technique is applied to form the resistance volume graphic of RN5041 film precision resistor voltage divider networks, and the quality of figure is straight
Connecing influences the quality of product.It was originally to stand development by the way of in dry film developing process, and substrate surface can be caused to be formed
Batt layer stops further development.
Exposing meron, soaking time is longer in developer solution, can lead to product surface dry film peeling, blistering after development;And
Developing time is shorter, and marginal surface then has zigzag excessive, or even large area peeling occurs, and then one group of contradiction there is also
Overlapping.Probably every has 60% resistance unit to will appear serious jagged edge as occurred in Fig. 1, and in subsequent laser
It can lead to that cotangent amount is too small and generates hidden danger of quality in resistance trimming, or even the substrate having large area stripping occurs and scraps.
Invention content
To solve the above-mentioned problems, the present invention provides a kind of dry film developing methods, there is marginal surface after avoiding development
Zigzag generates.
The technical scheme is that:A kind of dry film developing method, includes the following steps:
(1) dry film developing trough is cleaned up with deionized water;
(2) dry film developer is added into dry film developing trough;
(3) substrate to be developed is put into the dry film developer, spray impregnates;
(4) in developing process, using the slight substrate dry film of the scrub back and forth surface of banister brush;
(5) after development terminates, developed substrate is taken out, is cleaned up, and is dried up.
Present invention marginal surface after analyzing substrate developing then has zigzag, which is due to quiet
When setting development, the substance of dry film dissolving forms batt layer in substrate surface, and the batt layer blocks further development.
After from the above analysis, the present invention is slight using banister brush in developing process in existing dry film developing technique
The substrate dry film of scrub back and forth surface, batt layer is physically destroyed, to reduce the batt layer to development generate shadow
It rings, dry film itself has certain degree of hardness, so banister brush is not enough to influence dry film itself.
Substrate in the present invention can be a variety of existing conventional product structures, preferably, the substrate is RN5041
Film precision divider resistance.
Compared with prior art, beneficial effects of the present invention are embodied in:
The present invention is tested using the slight influence scrubbed back and forth and reduce batt layer to product of banister brush by multiple batches of
Card, the present invention play prodigious improvement, the frequency (being reduced to 10% from 60%) that toothed edge occurs, while contradictory solution of developing
And improved efficiency, throughput rate have obtained apparent improvement.Increasing fixing efficiency, (speed is down to by 5m/30s~7m/30s
2m/30s), therefore the present invention effectively increases development quality, reduces the frequency that jagged edge occurs, increases fixing efficiency.
Description of the drawings
Fig. 1 is the product schematic diagram before the present invention improves.
Fig. 2 is the product schematic diagram after the present invention improves.
Specific implementation mode
Embodiment 1
A kind of dry film developing method, includes the following steps:
(1) dry film developing trough is cleaned up with deionized water;
(2) dry film developer is added into dry film developing trough;
(3) substrate (RN5041 film precisions divider resistance) to be developed is put into the dry film developer, spray leaching
Bubble;
(4) in developing process, using the slight substrate dry film of the scrub back and forth surface of banister brush;
(5) after development terminates, developed substrate is taken out, is cleaned up, and is dried up.
Note:In addition in developing process in the present invention, other than the slight substrate dry film of the scrub back and forth surface of banister brush
The step of, it is existing conventional method, therefore this will not be repeated here by the present invention.
It is taken in developing process in the present invention using the slight scrub back and forth of banister brush, batt layer is physically broken
It is bad, to reduce the influence that the batt layer generates development.Dry film itself has certain degree of hardness, so banister brush is not enough to influence to do
Film itself.
Multiple batches of verification is passed through using the above method, this method plays prodigious improvement, frequency that toothed edge occurs (from
10%) 60% is reduced to, (see Fig. 2:Effect after improvement), while develop contradictory solution and improved efficiency, throughput rate obtain
It is apparent to improve, increase fixing efficiency (speed is down to 2m/30s by 5m/30s~7m/30s).
It is special in (about 900) delivery products of RN5041 film precisions divider resistance because the method for the present invention improves income
Do not show shipping period in advance when (cycle time 1 week or so time), while subsequent qualification rate is also apparent
It is promoted (40% rises to 60%), promotion and quality conformance to quality have apparent contribution.Though the improvement is improved flow,
In view of the price of RN5041 is higher, if by 100 yuan/only calculating, the possible nearly 1,000 yuan of contribution amplitude of the technological improvement rises to
Higher.The delivery of the following RN5041 still may be further up, in addition if improved dry film technique is introduced other sputterings
Blocking field (such as the filter of research and development is try to), later stage benefit can not be estimated.
Claims (2)
1. a kind of dry film developing method, which is characterized in that include the following steps:
(1) dry film developing trough is cleaned up with deionized water;
(2) dry film developer is added into dry film developing trough;
(3) substrate to be developed is put into the dry film developer, spray impregnates;
(4) in developing process, using the slight substrate dry film of the scrub back and forth surface of banister brush;
(5) after development terminates, developed substrate is taken out, is cleaned up, and is dried up.
2. dry film developing method as described in claim 1, which is characterized in that the substrate is RN5041 film precisions partial pressure electricity
Resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810418538.2A CN108398859A (en) | 2018-05-04 | 2018-05-04 | A kind of dry film developing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810418538.2A CN108398859A (en) | 2018-05-04 | 2018-05-04 | A kind of dry film developing method |
Publications (1)
Publication Number | Publication Date |
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CN108398859A true CN108398859A (en) | 2018-08-14 |
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Family Applications (1)
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CN201810418538.2A Pending CN108398859A (en) | 2018-05-04 | 2018-05-04 | A kind of dry film developing method |
Country Status (1)
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CN (1) | CN108398859A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111240161A (en) * | 2018-11-28 | 2020-06-05 | 江西一诺新材料有限公司 | Thick dry film developing process |
Citations (6)
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US6159663A (en) * | 1998-06-30 | 2000-12-12 | Intersil Corporation | Method of creating a solderable metal layer on glass or ceramic |
CN102958282A (en) * | 2011-08-16 | 2013-03-06 | 悦虎电路(苏州)有限公司 | Circuit manufacturing method utilizing wet films and dry films for circuit boards |
CN105142345A (en) * | 2015-08-04 | 2015-12-09 | 深圳市景旺电子股份有限公司 | Fabrication method for printed circuit board (PCB) with irregularity in board surface |
CN106019861A (en) * | 2016-07-04 | 2016-10-12 | 奥士康精密电路(惠州)有限公司 | Method for quick developing of dry film |
CN106527064A (en) * | 2016-12-02 | 2017-03-22 | 天津宝兴威科技股份有限公司 | Developing solution used for yellow light process and developing process of developing solution |
CN206805141U (en) * | 2017-05-22 | 2017-12-26 | 湖北碧辰科技股份有限公司 | A kind of polish-brush function developing machine |
-
2018
- 2018-05-04 CN CN201810418538.2A patent/CN108398859A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159663A (en) * | 1998-06-30 | 2000-12-12 | Intersil Corporation | Method of creating a solderable metal layer on glass or ceramic |
CN102958282A (en) * | 2011-08-16 | 2013-03-06 | 悦虎电路(苏州)有限公司 | Circuit manufacturing method utilizing wet films and dry films for circuit boards |
CN105142345A (en) * | 2015-08-04 | 2015-12-09 | 深圳市景旺电子股份有限公司 | Fabrication method for printed circuit board (PCB) with irregularity in board surface |
CN106019861A (en) * | 2016-07-04 | 2016-10-12 | 奥士康精密电路(惠州)有限公司 | Method for quick developing of dry film |
CN106527064A (en) * | 2016-12-02 | 2017-03-22 | 天津宝兴威科技股份有限公司 | Developing solution used for yellow light process and developing process of developing solution |
CN206805141U (en) * | 2017-05-22 | 2017-12-26 | 湖北碧辰科技股份有限公司 | A kind of polish-brush function developing machine |
Non-Patent Citations (1)
Title |
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管德福: "《包装印刷工艺﹒特种装潢印刷》", 31 July 2004 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111240161A (en) * | 2018-11-28 | 2020-06-05 | 江西一诺新材料有限公司 | Thick dry film developing process |
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Application publication date: 20180814 |
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