CN106019861A - Method for quick developing of dry film - Google Patents
Method for quick developing of dry film Download PDFInfo
- Publication number
- CN106019861A CN106019861A CN201610514223.9A CN201610514223A CN106019861A CN 106019861 A CN106019861 A CN 106019861A CN 201610514223 A CN201610514223 A CN 201610514223A CN 106019861 A CN106019861 A CN 106019861A
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- China
- Prior art keywords
- dry film
- developing
- brush
- rapid development
- development method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/305—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the brushing or rubbing means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention provides a method for quick developing of a dry film. The method comprises the following steps of pretreatment: sequentially performing pickling, polishing and brushing, and water brushing on a circuit board at the conveying speed of 2-3m/min; adhering the film, wherein the film adhering speed is 2.8-3.0m/min, the pressure of a hot press roll is 4.2-4.5Kg/cm<2>, and the working temperature of the hot press roll is 90-100 DEG C; exposing; developing: using a 0.8-1.2% Na2CO3 (sodium carbonate) solution to develop, wherein the developing speed is 5-6m/min, the spraying pressure of a developing liquid is 0.8-1.2Kg/cm<2>, the water washing pressure is 1.0-1.5Kg/cm<2>, and the drying temperature is 50-60 DEG C. The method has the advantages that the circuit board is sequentially performed with pickling, polishing and brushing, and water brushing by volcanic ash in the pretreatment process, so that the filling capacity and adhesion force of the dry film are improved, and the processing quality of film adhering is improved; the control parameters are optimized in the subsequent film adhering and developing step, and the whole developing time of the dry film is effectively shortened.
Description
Technical field
The present invention relates to wiring board and manufacture field, particularly relate to a kind of dry film rapid development method.
Background technology
Along with the high speed development of electronic technology, electronic product cheap various press close to popular life, be greatly enriched public demand.People's wilderness demand to electronic product, constantly proposes requirements at the higher level to production efficiency and product quality.Manufacturing field at wiring board, it is long, in the urgent need to a kind of dry film rapid development method that can accelerate speed of production that dry film developing procedure expends the time.
Summary of the invention
For the problems referred to above, the present invention provides a kind of dry film rapid development method, including step:
Pre-treatment, the transfer rate with 2～3m/min carries out pickling, polish-brush, washing successively to wiring board；
Pad pasting, pad pasting speed controlling is in 2.8-3.0m/min, hot pressing rolling power 4.2-4.5Kg/cm2, hot pressing rumble operating temperature controls at 90-100 DEG C；
Exposure；
Development, uses the concentration 0.8～Na of 1.2%2CO3Solution development, developing powder 5～6m/min, developer solution spray pressure 0.8-1.2 Kg/cm 2, wash pressure 1.0-1.5Kg/cm 2, drying temperature 50～60 DEG C.
Preferably, in described pre-treatment step, pickling uses the H of 4-5%2SO4Solution.
Preferably, in described pre-treatment step, polish-brush process uses a pair adhesive-bonded fabric polish-brush to carry out.
Preferably, in described pre-treatment step, water-washing process uses 2 to wash soft brush, the volcanic ash of concentration 18-25%.
Preferably, in described step of exposure, using 21 lattice exposure guide rules to control, light exposure controls at 6～8 lattice.
Pickling that wiring board is carried out by pretreatment stage by the present invention successively, polish-brush, volcanic ash are washed, improve dry film filling capacity, dry film adhesive force and then improve the crudy of pad pasting, and in follow-up pad pasting and development step, control parameter is optimized configuration, effectively shorten the overall time of dry film development.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in further detail.
As a kind of preferred embodiment, can sequentially include the following steps:
Pre-treatment, carries out pickling, polish-brush, washing successively with the transfer rate of 2.5m/min to wiring board；Pickling uses the H of 5%2SO4Solution, the adhesive-bonded fabric polish-brush that polish-brush uses a pair specification to be 600# is carried out, and using concentration during washing is the volcanic ash of 20%, utilize two to specification be 400# soft brush carry out.Improve dry film filling capacity, dry film adhesive force at pre-treatment step, reduce development dry film holes.
Pad pasting, pad pasting speed controlling is in 2.8/min, hot pressing rolling power 4.2Kg/cm2, hot pressing rumble operating temperature controls at 90-95 DEG C；
Exposure；Using 21 lattice exposure guide rules to control, light exposure controls at 7 lattice.
Development, uses the Na of concentration 1.0%2CO3Solution development, and use the control parameter of optimization, developing powder is set to 5m/min, Na during development2CO3Spray pressure 1.0 Kg/cm of solution 2, wash after spray developer solution, wash pressure 1.5Kg/cm
2, finally dry with 55 DEG C of temperature.
Whole process compares traditional handicraft, and bulk velocity can improve about 10%, the most also can reduce development dry film holes probability, and minimizing is scrapped, cost-effective.
Carry out although the description of this invention combines embodiments above, but, those skilled in the art can carry out many replacement, modifications and variations according to above-mentioned content, be apparent from.Therefore, all such replacements, improve and change in the spirit and scope being included in appended claims.
Claims (5)
1. a dry film rapid development method, including step:
Pre-treatment, the transfer rate with 2～3m/min carries out pickling, polish-brush, washing successively to wiring board；
Pad pasting, pad pasting speed controlling is in 2.8-3.0m/min, hot pressing rolling power 4.2-4.5Kg/cm2, hot pressing rumble operating temperature controls at 90-100 DEG C；
Exposure；
Development, uses the concentration 0.8～Na of 1.2%2CO3Solution development, developing powder 5～6m/min, developer solution spray pressure 0.8-1.2 Kg/cm 2, wash pressure 1.0-1.5Kg/cm 2, drying temperature 50～60 DEG C.
2. according to dry film rapid development method a kind of described in claim 1, it is characterised in that: in described pre-treatment step, pickling uses the H of 4-5%2SO4Solution.
3. according to dry film rapid development method a kind of described in claim 1, it is characterised in that: in described pre-treatment step, polish-brush process uses a pair adhesive-bonded fabric polish-brush to carry out.
4. according to dry film rapid development method a kind of described in claim 1, it is characterised in that: in described pre-treatment step, water-washing process uses 2 to wash soft brush, the volcanic ash of concentration 18-25%.
5. according to dry film rapid development method a kind of described in claim 1, it is characterised in that: in described step of exposure, using 21 lattice exposure guide rules to control, light exposure controls at 6～8 lattice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610514223.9A CN106019861A (en) | 2016-07-04 | 2016-07-04 | Method for quick developing of dry film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610514223.9A CN106019861A (en) | 2016-07-04 | 2016-07-04 | Method for quick developing of dry film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106019861A true CN106019861A (en) | 2016-10-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610514223.9A Pending CN106019861A (en) | 2016-07-04 | 2016-07-04 | Method for quick developing of dry film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106019861A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106961805A (en) * | 2017-03-10 | 2017-07-18 | 奥士康精密电路（惠州）有限公司 | It is a kind of to reduce the bad method of dry film |
| CN107072060A (en) * | 2017-05-25 | 2017-08-18 | 江门崇达电路技术有限公司 | A kind of method for solving thin plate circuit dog tooth |
| CN108398859A (en) * | 2018-05-04 | 2018-08-14 | 中国振华集团云科电子有限公司 | A kind of dry film developing method |
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|---|---|---|---|---|
| US6159663A (en) * | 1998-06-30 | 2000-12-12 | Intersil Corporation | Method of creating a solderable metal layer on glass or ceramic |
| CN101528011A (en) * | 2009-03-20 | 2009-09-09 | 珠海市科盈电子有限公司 | Manufacturing method for interconnected multilayer circuit board by copper cylinder method |
| CN102056412A (en) * | 2009-10-28 | 2011-05-11 | 北大方正集团有限公司 | Method and system for processing graphs |
| CN102958282A (en) * | 2011-08-16 | 2013-03-06 | 悦虎电路(苏州)有限公司 | Circuit manufacturing method utilizing wet films and dry films for circuit boards |
| CN103458619A (en) * | 2013-08-19 | 2013-12-18 | 四川海英电子科技有限公司 | Method for producing double-sided PCB |
| CN103826391A (en) * | 2014-02-26 | 2014-05-28 | 湖北龙腾电子科技有限公司 | Method for manufacturing wet membrane on outer circuit of circuit board |
-
2016
- 2016-07-04 CN CN201610514223.9A patent/CN106019861A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159663A (en) * | 1998-06-30 | 2000-12-12 | Intersil Corporation | Method of creating a solderable metal layer on glass or ceramic |
| CN101528011A (en) * | 2009-03-20 | 2009-09-09 | 珠海市科盈电子有限公司 | Manufacturing method for interconnected multilayer circuit board by copper cylinder method |
| CN102056412A (en) * | 2009-10-28 | 2011-05-11 | 北大方正集团有限公司 | Method and system for processing graphs |
| CN102958282A (en) * | 2011-08-16 | 2013-03-06 | 悦虎电路(苏州)有限公司 | Circuit manufacturing method utilizing wet films and dry films for circuit boards |
| CN103458619A (en) * | 2013-08-19 | 2013-12-18 | 四川海英电子科技有限公司 | Method for producing double-sided PCB |
| CN103826391A (en) * | 2014-02-26 | 2014-05-28 | 湖北龙腾电子科技有限公司 | Method for manufacturing wet membrane on outer circuit of circuit board |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106961805A (en) * | 2017-03-10 | 2017-07-18 | 奥士康精密电路（惠州）有限公司 | It is a kind of to reduce the bad method of dry film |
| CN107072060A (en) * | 2017-05-25 | 2017-08-18 | 江门崇达电路技术有限公司 | A kind of method for solving thin plate circuit dog tooth |
| CN108398859A (en) * | 2018-05-04 | 2018-08-14 | 中国振华集团云科电子有限公司 | A kind of dry film developing method |
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Application publication date: 20161012 |