CN101875048A - Method for removing impurities on surface of silicon chip - Google Patents
Method for removing impurities on surface of silicon chip Download PDFInfo
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- CN101875048A CN101875048A CN 201010214616 CN201010214616A CN101875048A CN 101875048 A CN101875048 A CN 101875048A CN 201010214616 CN201010214616 CN 201010214616 CN 201010214616 A CN201010214616 A CN 201010214616A CN 101875048 A CN101875048 A CN 101875048A
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Abstract
The invention discloses a method for removing impurities on the surface of a silicon chip, which comprises: placing a silicon chip into a closed container and irradiating the silicon chip by using a ultraviolet lamp; introducing ozone into the closed container at 20 to 50 DEG C for no less than 60 seconds to generate an oxide layer on the surface of the silicon chip; introducing alkaline solution into the closed container to wash the silicon chip under ultrasonic waves for no less than 200 seconds at 0 to 50 DEG C; introducing a surfactant into the closed container to wash the silicon chip under ultrasonic waves for no less than 200 seconds at 0 to 50 DEG C; washing the silicon chip with pure water under ultrasonic waves for no less than 200 seconds at 0 to 50 DEG C; and washing the silicon chip with absolute ethanol and drying the silicon chip. In the invention, the silicon chip is not damaged in the treatment process, the operation is convenient and quick and the equipment is simple.
Description
Technical field
What the present invention relates to is a kind of clean method of silicon chip, in particular a kind of method of removing impurities on surface of silicon chip.
Background technology
Silicon chip is the board made from silicon materials, the silicon chip surface pollutant mainly includes the machine thing, particle contamination and metal ion are stained etc., and they are present in the autoxidation film of the surface of silicon chip or silicon chip in the mode of physical absorption and chemistry usually, are difficult to remove.After normal cleaning, the impurity that still has some to remove, comprise: organic matter, metal and SIC etc., because cleaning needs long flow process, need a large amount of cleaning devices and a large amount of cleaning fluids, and consume a large amount of electric power and time, particularly device all has bigger volume, take all factors into consideration and save time, save cost, energy savings and cleaning performance, need a kind of new method to remove after the normal wash technology still remaining impurities.
Summary of the invention
Goal of the invention: the objective of the invention is to overcome the deficiencies in the prior art, a kind of method of removing impurities on surface of silicon chip is provided, has utilized ultraviolet irradiation ozone, can produce the stronger hydroxyl radical free radical of oxidability, can decompose most organic matter, metal is also had good oxidation.
Technical scheme: the present invention is achieved by the following technical solutions, the present invention includes following steps:
(1) silicon chip is put into closed container, use the ultraviolet lamp irradiation in closed container, the energy of ultraviolet lamp is not less than 600mj/cm
2
(2) in closed container, feed ozone, 20～50 ℃ of temperature, the time is no less than 60s, makes the surface of silicon chip generate oxide layer;
(3) be no less than 200s with feeding ultrasonic the washing of alkali lye in the airtight container, temperature is 0～50 ℃;
(4) surfactant is fed ultrasonic the washing of closed container and be no less than 200s, temperature is 0～50 ℃;
(5) silicon chip is no less than 200s with ultrasonic the washing of pure water, temperature is 0～50 ℃;
(6) silicon chip is washed back oven dry finished product with absolute ethyl alcohol.
Described ultrasonic power is 1.8KW, and frequency is 40KHz.
The pH value of alkali lye is 9～14 in the described step (3), and alkali lye is selected from one or more in the following combination: sodium alkoxide, alkyl sodium, hydrocarbyl lithium, caustic alkali and quaternary ammonium base.
Surfactant concentrations is 0.5%～30% in the described step (4), and surfactant is selected from one or more in the following combination: polyoxyethylene 20 sorbitan monolaurate, polyoxyethylene sorbitol acid anhydride monoleate and AEO.
Operation principle of the present invention is: utilize ultraviolet irradiation ozone, can produce the stronger hydroxyl radical free radical of oxidability, organic impurities to silicon chip surface, metals etc. carry out oxidation, and silicon chip surface also forms oxide layer, with the silicon face that utilizes low surface tension behind the alkali liquid corrosion, and utilize ultrasonic wave etc. to make impurity be difficult to adsorb up once more.
Beneficial effect: the present invention is effective equally to inorganic matter and organic matter, and can not cause damage to silicon chip in processing procedure, promptly uses this method that the silicon chip processing time is surpassed 4h, and silicon chip surface is still intact, and simple operation, and equipment is simple.
The specific embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
Present embodiment may further comprise the steps: (1) puts into closed container with silicon chip, uses the ultraviolet lamp irradiation in closed container, and the energy of ultraviolet lamp is 600mj/cm
2
(2) feed ozone in closed container, 25 ℃, the time is 500s, makes the surface of silicon chip generate oxide layer;
(3) be 13.5 the ultrasonic 500s that washes of tetramethyl ammonium hydroxide solution with feeding pH value in the airtight container, ultrasonic power is 1.8KW, and frequency is 40KHz, and temperature is 30 ℃;
(4) surfactant is fed the ultrasonic 500s of washing of closed container, ultrasonic power is 1.8KW, and frequency is 40KHz, and temperature is 30 ℃;
(5) with silicon chip with the ultrasonic 600s that washes of pure water, ultrasonic power is 1.8KW, frequency is 40KHz, temperature is 30 ℃;
(6) silicon chip is washed back oven dry finished product with absolute ethyl alcohol.
Surfactant is a polysorbas20 in the described step (4): Tween 80=1: 1, concentration are 15%.
Reach 4 hours processing at the silicon chip to present embodiment after, silicon chip surface is still excellent.Cleannes are greater than 99%.
Embodiment 2
Present embodiment may further comprise the steps: (1) puts into closed container with silicon chip, uses the ultraviolet lamp irradiation in closed container, and the energy of ultraviolet lamp is 700mj/cm
2
(2) in closed container, feed ozone, 50 ℃ of temperature, time 300s makes the surface of silicon chip generate oxide layer;
(3) be 14 the ultrasonic 800s that washes of potassium hydroxide solution with feeding pH value in the airtight container, ultrasonic power is 1.8KW, and frequency is 40KHz, and temperature is 50 ℃;
(4) surfactant is fed the ultrasonic 800s of washing of closed container, ultrasonic power is 1.8KW, and frequency is 40KHz, and temperature is 50 ℃;
(5) with silicon chip with the ultrasonic 800s that washes of pure water, ultrasonic power is 1.8KW, frequency is 40KHz, temperature is 50 ℃;
(6) silicon chip is washed back oven dry finished product with absolute ethyl alcohol.
Surfactant is that concentration is 10% AEO-9 (AEO) in the described step (4).
Reach 4 hours processing at the silicon chip to present embodiment after, silicon chip surface is still excellent.Cleannes are greater than 99%.
Claims (6)
1. a method of removing impurities on surface of silicon chip is characterized in that, may further comprise the steps:
(1) silicon chip is put into closed container, use the ultraviolet lamp irradiation in closed container, the energy of ultraviolet lamp is not less than 600mj/cm
2
(2) in closed container, feed ozone, 20～50 ℃ of temperature, the time is no less than 60s, makes the surface of silicon chip generate oxide layer;
(3) be no less than 200s with feeding ultrasonic the washing of alkali lye in the airtight container, temperature is 0～50 ℃;
(4) surfactant is fed ultrasonic the washing of closed container and be no less than 200s, temperature is 0～50 ℃;
(5) silicon chip is no less than 200s with ultrasonic the washing of pure water, temperature is 0～50 ℃;
(6) silicon chip is washed back oven dry finished product with absolute ethyl alcohol.
2. a kind of method of removing impurities on surface of silicon chip according to claim 1 is characterized in that: the pH value of alkali lye is 9～14 in the described step (3).
3. a kind of method of removing impurities on surface of silicon chip according to claim 1 and 2, it is characterized in that: described alkali lye is selected from one or more in the following combination: sodium alkoxide, alkyl sodium, hydrocarbyl lithium, caustic alkali and quaternary ammonium base.
4. a kind of method of removing impurities on surface of silicon chip according to claim 1 is characterized in that: surfactant concentrations is 0.5%～30% in the described step (4).
5. according to claim 1 or 4 described a kind of methods of removing impurities on surface of silicon chip, it is characterized in that: surfactant is selected from one or more in the following combination: polyoxyethylene 20 sorbitan monolaurate, polyoxyethylene sorbitol acid anhydride monoleate and AEO.
6. a kind of method of removing impurities on surface of silicon chip according to claim 1, it is characterized in that: described ultrasonic power is 1.8KW, frequency is 40KHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010214616 CN101875048A (en) | 2010-06-30 | 2010-06-30 | Method for removing impurities on surface of silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010214616 CN101875048A (en) | 2010-06-30 | 2010-06-30 | Method for removing impurities on surface of silicon chip |
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| CN101875048A true CN101875048A (en) | 2010-11-03 |
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| CN 201010214616 Pending CN101875048A (en) | 2010-06-30 | 2010-06-30 | Method for removing impurities on surface of silicon chip |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103639149A (en) * | 2013-12-09 | 2014-03-19 | 山东百利通亚陶科技有限公司 | Method for cleaning wafer |
| CN106881308A (en) * | 2017-03-06 | 2017-06-23 | 上海巨煌光电科技有限公司 | A kind of cleaning method of plated film lens |
| CN107486459A (en) * | 2017-10-10 | 2017-12-19 | 中国电子科技集团公司第二十六研究所 | A kind of scintillator crystal bar batch cleaning jig and cleaning method |
| CN110047736A (en) * | 2019-04-22 | 2019-07-23 | 成都晶宝时频技术股份有限公司 | A kind of wafer cleaning method |
| CN115245926A (en) * | 2022-08-30 | 2022-10-28 | 北京北方华创微电子装备有限公司 | Processing method of parts |
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| US6588122B2 (en) * | 1999-11-26 | 2003-07-08 | Heraeus Noblelight Gmbh | Method for treating surfaces of substrates and apparatus |
| WO2004027810A2 (en) * | 2002-09-20 | 2004-04-01 | Thomas Johnston | System and method for removal of materials from an article |
| CN1536623A (en) * | 1996-08-20 | 2004-10-13 | �¼�ŵ��ʽ���� | Method and device for cleaning electronic element or its mfg. equipment element |
| EP1541667A1 (en) * | 2002-08-13 | 2005-06-15 | Sumitomo Mitsubishi Silicon Corporation | Technique on ozone water for use in cleaning semiconductor substrate |
| CN101700520A (en) * | 2009-12-03 | 2010-05-05 | 杭州海纳半导体有限公司 | Washing method of monocrystalline/polycrystalline silicon chips |
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2010
- 2010-06-30 CN CN 201010214616 patent/CN101875048A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1536623A (en) * | 1996-08-20 | 2004-10-13 | �¼�ŵ��ʽ���� | Method and device for cleaning electronic element or its mfg. equipment element |
| US6588122B2 (en) * | 1999-11-26 | 2003-07-08 | Heraeus Noblelight Gmbh | Method for treating surfaces of substrates and apparatus |
| EP1541667A1 (en) * | 2002-08-13 | 2005-06-15 | Sumitomo Mitsubishi Silicon Corporation | Technique on ozone water for use in cleaning semiconductor substrate |
| WO2004027810A2 (en) * | 2002-09-20 | 2004-04-01 | Thomas Johnston | System and method for removal of materials from an article |
| CN101700520A (en) * | 2009-12-03 | 2010-05-05 | 杭州海纳半导体有限公司 | Washing method of monocrystalline/polycrystalline silicon chips |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103639149A (en) * | 2013-12-09 | 2014-03-19 | 山东百利通亚陶科技有限公司 | Method for cleaning wafer |
| CN103639149B (en) * | 2013-12-09 | 2016-01-06 | 山东百利通亚陶科技有限公司 | A kind of wafer cleaning method |
| CN106881308A (en) * | 2017-03-06 | 2017-06-23 | 上海巨煌光电科技有限公司 | A kind of cleaning method of plated film lens |
| CN107486459A (en) * | 2017-10-10 | 2017-12-19 | 中国电子科技集团公司第二十六研究所 | A kind of scintillator crystal bar batch cleaning jig and cleaning method |
| CN110047736A (en) * | 2019-04-22 | 2019-07-23 | 成都晶宝时频技术股份有限公司 | A kind of wafer cleaning method |
| CN115245926A (en) * | 2022-08-30 | 2022-10-28 | 北京北方华创微电子装备有限公司 | Processing method of parts |
| CN115245926B (en) * | 2022-08-30 | 2024-07-23 | 北京北方华创微电子装备有限公司 | Method for processing parts |
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Open date: 20101103 |