CN104190652A - Cleaning device and method for medium and large-sized sapphire wafers after patterned etching process - Google Patents
Cleaning device and method for medium and large-sized sapphire wafers after patterned etching process Download PDFInfo
- Publication number
- CN104190652A CN104190652A CN201410391442.3A CN201410391442A CN104190652A CN 104190652 A CN104190652 A CN 104190652A CN 201410391442 A CN201410391442 A CN 201410391442A CN 104190652 A CN104190652 A CN 104190652A
- Authority
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- China
- Prior art keywords
- sapphire wafer
- shower nozzle
- vacuum suction
- suction platform
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 56
- 239000010980 sapphire Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000004140 cleaning Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 title claims abstract description 22
- 235000012431 wafers Nutrition 0.000 title abstract description 57
- 238000000059 patterning Methods 0.000 claims abstract description 20
- 239000007921 spray Substances 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000007598 dipping method Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 abstract 5
- 238000009423 ventilation Methods 0.000 abstract 3
- 238000012864 cross contamination Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000003344 environmental pollutant Substances 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 210000005056 cell body Anatomy 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 208000011117 substance-related disease Diseases 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
- B08B3/123—Cleaning travelling work, e.g. webs, articles on a conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
The invention discloses a cleaning device for medium and large-sized sapphire wafers after a patterned etching process. The cleaning device is composed of a motor, a vacuum adsorption table and top spray heads. The vacuum adsorption table is installed to the output end of the motor, a ventilation channel is formed in the vacuum adsorption table, and the lower end of the ventilation channel is connected with an air source. The bottom surface, corresponding to the sapphire wafers, of the vacuum adsorption table is provided with a circle of air outlet holes connected with the upper end of the ventilation channel. The spray heads are installed above the vacuum adsorption table. The invention further discloses a cleaning method for the medium and large-sized sapphire wafers after the patterned etching process. According to the cleaning device and method, the phenomenon of cross contamination can be avoided, the cleaning effect can be achieved, and then the rate of finished products and yield of the subsequent patterning process and the MOCVD process are increased.
Description
Technical field
The present invention relates to cleaning technique field after the etching of sapphire wafer patterning process, relate in particular to cleaning device and method after a kind of new-type middle large-size sapphire wafer (>4 inch) patterning process etching, be applied to PSS patterning sapphire wafer substrate and make, the acid tank cleaning technique that changes tradition is single-wafer cleaning technique.
Background technology
The existing wafer that is applied to middle large-size sapphire wafer patterning process; because these wafers are after gold-tinted and etching; surface has manyly reacts the accessory substance producing because of etching gas with photoresistance; please wash equipment and processing procedure and this kind of accessory substance uses cell body formula; usually can cause pollutant and the clearance of particles of reduced size to be difficult for, and often cause cross pollution.Conventional Wet technique clears the pollution off with liquid fluid on the surface of wafer, but their efficiency is not good, sometimes cannot remove less pollutant completely, and therefore part pollutant is still retained on the surface of wafer.Wafer cleaning processing procedure after etching, is all the cleaning equipment of cell body formula, as shown in Figure 1 at present, it is cleaning process after current etching, adopting acid tank, carry out successively the cleaning of new acetone mega sonic wave, washed with de-ionized water, the mixed cleaning fluid of SPM(sulfuric acid hydrogen peroxide, is mainly by H
2sO
4with H
2o
2combination, belongs to prior art to scale) clean, deionized water mega sonic wave cleans, the mixed cleaning fluid of the low Warm ammonia of cold SC1(and hydrogen peroxide, refers to the ammonia and the mixed cleaning fluid of hydrogen peroxide of 40 DEG C) clean and the cleaning of deionized water mega sonic wave.The cleaning equipment of this kind of cell body formula, must enter by the gross in rinse bath at every turn, this kind of cleaning technique is applied in middle large-size sapphire wafer patterning process, not only processing procedure is complicated, and, often because declining, sulfuric acid or hydrogen peroxide concentration cause not easy-clear of undersized pollutant after etching, also often cause the cross pollution of property by the gross, easily leave remnant in crystal column surface, as particulate, spot.And the part that this kind of small-sized pollutant is also wafer inspection machine AOI that present is conventional to be difficult for testing out, usually after the processing procedure of MOCVD completes, just find such problem, this management to production line, production cost, yield rate and yield cause very large impact, because these residues that remain in crystal column surface can cause significant deficiency and pattern anomalies in follow-up of heap of stone brilliant processing procedure (MOCVD), and this defect and pattern anomalies are exactly one of yield rate after of heap of stone brilliant (MOCVD) and main killer of yield problem, and this kind of residue causes the production cost of sapphire patterning process to increase too.
Summary of the invention
The object of the present invention is to provide cleaning device and method after large-size sapphire wafer in one (>4 inch) patterning process etching, to avoid the phenomenon of cross pollution, reach the effect of cleaning, and then improved yield rate and the yield of subsequent pattern processing procedure and MOCVD processing procedure.
In order to reach above-mentioned purpose, solution of the present invention is:
Cleaning device after the etching of large-size sapphire wafer patterning process in one, formed by motor, vacuum suction platform and top shower nozzle, vacuum suction platform is arranged on the output of motor, in vacuum suction platform, form airway, the lower termination source of the gas of airway, on vacuum suction platform, the bottom surface of corresponding sapphire wafer is offered one and is irised out pore and be connected with the upper end of airway, and top shower nozzle is arranged on vacuum suction platform top.
Described top shower nozzle comprises two deionized water shower nozzles, SPM shower nozzle and cold SC1 shower nozzle.
Described venthole is outward-dipping shape from the bottom to top.
In one, cleaning method after the etching of large-size sapphire wafer patterning process, the steps include:
The first step, adopts vacuum suction platform to fix sapphire wafer, opens driven by motor vacuum suction platform and the sapphire wafer rotation of vacuum suction platform below, rotating speed 200rpm;
Second step, opens source of the gas, jet to the bottom surface of sapphire wafer through venthole by the airway of vacuum suction platform;
The 3rd step, continues the first step and second step, meanwhile, sprays outward SPM clean with top shower nozzle at sapphire wafer top from centre;
The 4th step, continues the first step and second step, meanwhile, sprays outward deionized water carry out mega sonic wave cleaning with top shower nozzle at sapphire wafer top from centre;
The 5th step, continues the first step and second step, meanwhile, sprays outward cold SC1 clean with top shower nozzle at sapphire wafer top from centre;
The 6th step, continues the first step and second step, meanwhile, sprays outward deionized water carry out mega sonic wave cleaning with top shower nozzle at sapphire wafer top from centre;
The 7th step, continues the first step, and the speed that last wafer turns with 1500-2000 per minute is spin-dried for fast, disable motor.
Adopt after such scheme, the invention provides equipment and new-type manufacturing process for cleaning that monolithic cleans, rotate for pollutant and produce a centrifugal force by sapphire wafer, SPM is sprayed outward by centre, make it with etching after byproduct reaction, and allow fluid form little cavitation foam with deionized water and the cold SC1 of million acoustic energy energy, contribute to the surface removal particle from wafer.After this kind of new-type etching, cleaning technique can guarantee can not produce the phenomenon of cross pollution, to reach the effect of cleaning, has also improved yield rate and the yield of ensuing patterning process and MOCVD processing procedure.
Brief description of the drawings
Fig. 1 is the wafer cleaning processing procedure schematic diagram before the coating of prior art gold-tinted;
Fig. 2 is the wafer cleaning processing procedure schematic diagram before gold-tinted coating of the present invention;
Fig. 3 is that the wafer cleaning device before gold-tinted coating of the present invention uses schematic diagram.
Detailed description of the invention
As shown in Figure 3, the present invention has disclosed in one cleaning device after the etching of large-size sapphire wafer patterning process, is made up of motor (common member, not shown), vacuum suction platform 1 and some tops shower nozzle 2.
Vacuum suction platform 1 is arranged on the output of motor, forms airway 11 in vacuum suction platform 1, the lower termination source of the gas of airway 11, and on vacuum suction platform 1, the bottom surface of corresponding sapphire wafer 10 is offered one and is irised out pore 12 and be connected with the upper end of airway 11.Venthole 12 is outward-dipping shape from the bottom to top, is beneficial to gas and sends to the bottom edge of sapphire wafer 10.
Top shower nozzle 2 is arranged on vacuum suction platform 1 top.Top shower nozzle 2 comprises two deionized water shower nozzles 21, SPM shower nozzle 22 and cold SC1 shower nozzle 23, can also increase as required the number of top shower nozzle 2.
As shown in Figure 2, cleaning method after the etching of large-size sapphire wafer patterning process in the one that the present invention discloses, uses Fig. 3 shown device to clean, and the steps include:
The first step, first adopts sapphire wafer 10 vacuum suction platform 1 fixing, then opens the motor of vacuum suction platform 1 below, is rotated rotating speed 200rpm by driven by motor vacuum suction platform 1 and sapphire wafer 10;
Second step, open source of the gas, source of the gas can be the gas that nitrogen etc. does not react, airway 11 by vacuum suction platform 1 is jet to the bottom surface of sapphire wafer 10 through venthole 12, can avoid cleaning fluid to flow to sapphire wafer 10 back sides along sapphire wafer 10 edges by this gas and pollute, impaired;
The 3rd step, continue the first step and second step, make sapphire wafer 10 maintain rotation, venthole 12 continues jet always from bottom to sapphire wafer 10 edges, meanwhile, spray outward SPM with top shower nozzle 2 from centre at sapphire wafer 10 tops and clean, be mainly used in removing the organic matter on wafer, reach the effect of cleaning, also improved yield rate and the yield of ensuing patterning process and MOCVD processing procedure;
The 4th step, continue the first step and second step, make sapphire wafer 10 maintain rotation, venthole 12 continues jet always from bottom to sapphire wafer 10 edges, simultaneously, spray outward deionized water with top shower nozzle 2 from centre at sapphire wafer 10 tops and carry out mega sonic wave cleaning, be mainly used in the SPM removing of crystal column surface before, and particulate is taken away;
The 5th step, continue the first step and second step, make sapphire wafer 10 maintain rotation, venthole 12 continues jet always from bottom to sapphire wafer 10 edges, meanwhile, spraying outward cold SC1 clean with top shower nozzle 2 at sapphire wafer 10 tops from centre, is mainly alkaline oxygenated, remove the particle on wafer, and the metallic atom such as Au, Ag, Cu, Ni, Cd, Zn, Ca, Cr pollutes;
The 6th step, continue the first step and second step, make sapphire wafer 10 maintain rotation, venthole 12 continues jet always from bottom to sapphire wafer 10 edges, meanwhile, spray outward deionized water with top shower nozzle 2 from centre at sapphire wafer 10 tops and carry out mega sonic wave cleaning;
The 7th step, continues the first step, and last wafer is spin-dried for fast with per minute 1500 speed that turn, disable motor.
The present invention has realized single-wafer rotary-cleaning, can not produce the phenomenon of cross pollution, reaches the effect of thorough cleaning, has improved yield rate and the yield of ensuing patterning process and MOCVD processing procedure.
Claims (4)
1. cleaning device after the etching of large-size sapphire wafer patterning process in a kind, it is characterized in that: formed by motor, vacuum suction platform and top shower nozzle, vacuum suction platform is arranged on the output of motor, in vacuum suction platform, form airway, the lower termination source of the gas of airway, on vacuum suction platform, the bottom surface of corresponding sapphire wafer is offered one and is irised out pore and be connected with the upper end of airway, and top shower nozzle is arranged on vacuum suction platform top.
2. cleaning device after the etching of large-size sapphire wafer patterning process in one as claimed in claim 1, is characterized in that: top shower nozzle comprises two deionized water shower nozzles, SPM shower nozzle and cold SC1 shower nozzle.
3. cleaning device after the etching of large-size sapphire wafer patterning process in one as claimed in claim 1, is characterized in that: venthole is outward-dipping shape from the bottom to top.
4. a cleaning method after the etching of large-size sapphire wafer patterning process in, is characterized in that step is:
The first step, adopts vacuum suction platform to fix sapphire wafer, opens driven by motor vacuum suction platform and the sapphire wafer rotation of vacuum suction platform below, rotating speed 200rpm;
Second step, opens source of the gas, jet to the bottom surface of sapphire wafer through venthole by the airway of vacuum suction platform;
The 3rd step, continues the first step and second step, meanwhile, sprays outward SPM clean with top shower nozzle at sapphire wafer top from centre;
The 4th step, continues the first step and second step, meanwhile, sprays outward deionized water carry out mega sonic wave cleaning with top shower nozzle at sapphire wafer top from centre;
The 5th step, continues the first step and second step, meanwhile, sprays outward cold SC1 clean with top shower nozzle at sapphire wafer top from centre;
The 6th step, continues the first step and second step, meanwhile, sprays outward deionized water carry out mega sonic wave cleaning with top shower nozzle at sapphire wafer top from centre;
The 7th step, continues the first step, and the speed that last wafer turns with 1500-2000 per minute is spin-dried for fast, disable motor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410391442.3A CN104190652B (en) | 2014-08-11 | 2014-08-11 | In one large-size sapphire wafer patterning process etching after rinser and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410391442.3A CN104190652B (en) | 2014-08-11 | 2014-08-11 | In one large-size sapphire wafer patterning process etching after rinser and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104190652A true CN104190652A (en) | 2014-12-10 |
| CN104190652B CN104190652B (en) | 2016-06-22 |
Family
ID=52076099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410391442.3A Active CN104190652B (en) | 2014-08-11 | 2014-08-11 | In one large-size sapphire wafer patterning process etching after rinser and method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105436128A (en) * | 2015-11-18 | 2016-03-30 | 无锡科诺达电子有限公司 | Sapphire cleaner |
| CN105478391A (en) * | 2015-12-31 | 2016-04-13 | 上海新阳半导体材料股份有限公司 | Wafer cleaning apparatus |
| CN105789203A (en) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method therefor, and electronic equipment |
| CN113083766A (en) * | 2021-03-04 | 2021-07-09 | 亚电科技南京有限公司 | Method for cleaning single wafer |
| CN113113328A (en) * | 2021-03-04 | 2021-07-13 | 亚电科技南京有限公司 | Single wafer cleaning device washs dish structure and single wafer cleaning device |
| CN114392978A (en) * | 2022-03-24 | 2022-04-26 | 智程半导体设备科技(昆山)有限公司 | Megasonic cleaning machine for wafer processing |
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| CN1399312A (en) * | 2001-07-25 | 2003-02-26 | 旺宏电子股份有限公司 | Wafer cleaner |
| CN101651085A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Device and method for cleaning chip |
| CN204093771U (en) * | 2014-08-11 | 2015-01-14 | 厦门润晶光电有限公司 | Cleaning device after the etching of large-size sapphire wafer patterning process in one |
-
2014
- 2014-08-11 CN CN201410391442.3A patent/CN104190652B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH05299400A (en) * | 1992-04-23 | 1993-11-12 | Oki Electric Ind Co Ltd | Method and apparatus for cleaning semiconductor wafer |
| CN1399312A (en) * | 2001-07-25 | 2003-02-26 | 旺宏电子股份有限公司 | Wafer cleaner |
| CN101651085A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Device and method for cleaning chip |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789203A (en) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method therefor, and electronic equipment |
| CN105436128A (en) * | 2015-11-18 | 2016-03-30 | 无锡科诺达电子有限公司 | Sapphire cleaner |
| CN105478391A (en) * | 2015-12-31 | 2016-04-13 | 上海新阳半导体材料股份有限公司 | Wafer cleaning apparatus |
| CN113083766A (en) * | 2021-03-04 | 2021-07-09 | 亚电科技南京有限公司 | Method for cleaning single wafer |
| CN113113328A (en) * | 2021-03-04 | 2021-07-13 | 亚电科技南京有限公司 | Single wafer cleaning device washs dish structure and single wafer cleaning device |
| CN114392978A (en) * | 2022-03-24 | 2022-04-26 | 智程半导体设备科技(昆山)有限公司 | Megasonic cleaning machine for wafer processing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104190652B (en) | 2016-06-22 |
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