CN106971958A - Single-wafer wet type processing device - Google Patents
Single-wafer wet type processing device Download PDFInfo
- Publication number
- CN106971958A CN106971958A CN201610023209.9A CN201610023209A CN106971958A CN 106971958 A CN106971958 A CN 106971958A CN 201610023209 A CN201610023209 A CN 201610023209A CN 106971958 A CN106971958 A CN 106971958A
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- Prior art keywords
- wafer
- processing device
- wet type
- type processing
- annular
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The single-wafer wet type processing device that the present invention is provided, for preventing that the bottom surface of crystal round fringes from being corroded by chemical liquids or corrosive gas, it includes rotary chuck, the back of the body and washes seat and annular gas nozzle.The back of the body, which washes seat, includes planar annular, and the bottom surface of the planar annular and the wafer has preset space length.The annular gas nozzle is opened in the back of the body and washed on the planar annular of seat, and with the crystal round fringes preset distance distance, and direction and the predetermined angle of planar annular folder of gas are sprayed, to form gas wall between the planar annular and the bottom surface of the wafer.The preset space length is between 2mm to 5mm, and the preset distance is between 10mm to 15mm, and the predetermined angle can obtain wafer bottom surface protecting effect most preferably between 30 degree to 45 degree.
Description
【Technical field】
The present invention is that espespecially one kind is suitable for being used to prevent on a kind of wafer processing device
The single-wafer wet type processing device of the bottom surface corrosion of crystal round fringes.
【Background technology】
General microelectronic element is front or the device surface for being manufactured in semiconductor crystal wafer.Half
, it is necessary to carry out multiple tracks PROCESS FOR TREATMENT to the front of semiconductor crystal wafer in the technique of semiconductor wafer
Step, for example, spray treatment fluid (such as chemicals or deionized water to the surface of wafer
Deng), the wet processed program such as etching, cleaning to carry out wafer.Fig. 1 is refer to, is schemed
1 is the diagrammatic cross-section of existing spin etch cleaning machine.Existing spin etch is clear
Washing machine platform 10 includes using provided with a microscope carrier 14 in an etch chamber 12, etch chamber 12
To carry and fix a wafer W, the rotating shaft 16 of the lower section of microscope carrier 14 can be joined according to various techniques
Several setting demands, carries out high low speed rotation, and then drive wafer W rotations, etching
Fluid supply unit 18 of the liquid 19 then above wafer W is flowed down, with to wafer W's
Front is etched.
When carrying out above-mentioned etching again, if in the technological parameter bar of the wafer W slow-speed of revolution
Under part, then wafer W positive chemical liquid film or corrosive gas, it is possible to because of rotation
Centrifugal force is reduced, and is understood on bottom surface and the microscope carrier 14 that wafer W edges flow to wafer W,
And then corrosion phenomenon is produced, and corrosion contaminant is formed in wafer W bottom surfaces, for example
Metal particle, residue or film etc..If above-mentioned substance is not removed, it will destruction or
Pollute the element of wafer frontside.For example, some metal materials for technique, example
Such as copper, possible eleutheromorph circular bottom surface, which is returned, is stained with to wafer frontside, will so cause microelectronic element
Produce the yield in defect, and reduction manufacture.Therefore when carrying out above-mentioned wet process, pin
It is that equipment is vital in design to the safeguard measures of wafer W bottom surfaces to consider a little.
【The content of the invention】
In view of this, in order to prevent the bottom surface of crystal round fringes from corroding, the purpose of the present invention exists
In providing a kind of single-wafer wet type processing device, it is through annular gas nozzle to wafer side
The bottom surface of edge produces gas wall, to isolate the corruption of etching solution or corrosive gas to wafer bottom surface
Erosion, overcomes the problem of wafer rear pollutes in the prior art.
To reach above-mentioned purpose, the single-wafer wet type processing device that the present invention is provided is used to prevent
The only bottom surface corrosion of crystal round fringes, it includes rotary chuck, the back of the body and washes seat and annular gas spray
Mouth.The rotary chuck is used to hold and rotate a wafer.The back of the body washes seat and is arranged at institute
State around rotary chuck, including planar annular, the bottom of the planar annular and the wafer
Face has preset space length, and it is right angle knot that the back of the body, which washes seat peripheral region outside the planar annular,
Structure.The annular gas nozzle is opened in the back of the body and washed on the planar annular of seat, and
With the crystal round fringes at a predetermined distance, and direction and the annular flat of gas are sprayed
Face presss from both sides predetermined angle, between the planar annular and the bottom surface of the wafer
Form gas wall.The preset space length between 2mm to 5mm, the preset distance between
10mm is to 15mm, and the predetermined angle is between 30 degree to 45 degree.
In a preferred embodiment, the outer peripheral edge of the planar annular is approximately equal to the wafer
Edge, and the right-angle structure about trims the crystal round fringes.
In a preferred embodiment, the preset space length is 3mm.
In a preferred embodiment, the preset distance is 13mm.
In a preferred embodiment, the predetermined angle is 40 degree.
In a preferred embodiment, the annular gas nozzle is to wash on seat it in the back of the body
One circular slanting crack structure.
In a preferred embodiment, the annular gas nozzle is used to spray nitrogen, and spray
Go out the flow of nitrogen between 100LPM (public liter/min) to 150LPM.Preferably, spray
The flow for going out nitrogen is 120LPM.
In a preferred embodiment, in the single-wafer wet type processing device further comprises
Annular gas nozzle, its be opened in it is described the back of the body wash on the planar annular of seat, and with institute
Annular gas nozzle is stated in concentric circles, to the institute in the planar annular and the wafer
State formation gas wall between bottom surface.
In a preferred embodiment, the single-wafer wet type processing device further comprises pure
Sprinkler head, the pure water shower nozzle is opened in the back of the body and washed on the planar annular of seat, uses
In the bottom surface flushing to the crystal round fringes.
Compared to prior art, single-wafer wet type processing device of the invention is through setting institute
Preset space length is stated between 2mm to 5mm, the preset distance between 10mm to 15mm,
The predetermined angle can optimize barrier wafer bottom to be flowed between 30 degree to 45 degree
The etching solution or corrosive gas in face, and obtain splendid protecting effect.Additionally, it is preferred that
Ground, set the preset space length as 3mm, the preset distance be 13mm, pre- clamp
Angle be 40 degree and spray nitrogen flow be 120LPM, wafer bottom surface most preferably can be obtained
Protecting effect.
For above-mentioned and other purposes, feature and the advantage of the present invention can be become apparent,
Coordinate institute's accompanying drawings, be described in detail below：
【Brief description of the drawings】
Fig. 1 is the diagrammatic cross-section of existing spin etch cleaning machine；
Fig. 2 bows for the single-wafer wet type processing device of the first preferred embodiment of the present invention
Depending on schematic diagram；
Fig. 3 is diagrammatic cross-sections of the Fig. 2 along A-A ' line segments；
Fig. 4 washes the partial enlarged drawing of seat and wafer for Fig. 3 back of the body；
Fig. 5 bows for the single-wafer wet type processing device of the second preferred embodiment of the present invention
Depending on schematic diagram；
Fig. 6 is diagrammatic cross-sections of the Fig. 5 along B-B ' line segments.
【Embodiment】
Several preferred embodiments of the present invention make detailed by institute's accompanying drawings and following explanation
Thin description, in different schemas, identical component symbol represents same or analogous member
Part.
It refer to the single-wafer of Fig. 2 and Fig. 3, Fig. 2 for the first preferred embodiment of the present invention
The schematic top plan view of wet type processing device, Fig. 3 is section signals of the Fig. 2 along A-A ' line segments
Figure.As illustrated, the single-wafer wet type processing device 20 of this first preferred embodiment is used for
Prevent the bottom surface 34 of crystal round fringes 32 by etching solution 19 or gas attack.In order to understand table
Show, the not shown wafer W of Fig. 2.Specifically, as shown in figure 3, the monocrystalline of the present embodiment
Circle wet type processing device 20 includes a rotary chuck 22, one back of the body and washes seat 24, an annular gas
The pure water shower nozzle 28 of nozzle 26 and one.Said elements may be disposed at an etch chamber (not shown)
In, fluid supply unit 18 is additionally provided with rotary chuck 22, to provide etching solution 19 or clear
The fluids such as clean liquid.
As shown in figure 3, the rotary chuck (Chuck) 22 is used to hold and rotating wafer W,
Preferably, rotary chuck 22 can produce a negative pressure of vacuum and fix wafer W to draw.This
Outside, rotary chuck 22, which is connected to one, can make the rotating shaft 16 of high low speed rotation, to rotate crystalline substance
Circle W.
As shown in Figures 2 and 3, the back of the body washes seat 24 and is arranged at the rotary chuck 22 weeks
Enclose, the back of the body, which washes seat 24, includes a planar annular 242, the planar annular 242 and the wafer
There is a preset space length P, i.e. planar annular 242 to be slightly less than rotary chuck 22 for W bottom surface 34
Plane so that wafer W will not touch planar annular 242.The preset space length P is situated between
In 2mm to 5mm, can obtain preferably prevents erosion effect, in the present embodiment, described
Preset space length P is 3mm.The back of the body washes seat 24 at the outer peripheral edge 244 of the planar annular 242
For a right-angle structure R, that is to say, that the back of the body of the present embodiment washes seat 24 in the annular flat
The outer peripheral edge 244 in face 242 does not have the structure of arc or lead angle, to prevent air-flow flow-disturbing and
Corrode wafer W bottom surface 34.It is worth noting that, the periphery of the planar annular 242
Edge 244 is approximately equal to the crystal round fringes 32, and the right-angle structure R about trims the wafer
The diameter that the outer peripheral edge 244 at edge 32, i.e. planar annular 242 is approximately equal to wafer W is defined
Circle.
Fig. 4 is refer to, Fig. 4 washes the partial enlarged drawing of seat 24 and wafer for Fig. 3 back of the body.Institute
State annular gas nozzle 26 be opened in it is described the back of the body wash on the planar annular 242 of seat 24,
And with the crystal round fringes 32 at a distance of a preset distance D, and spray gas (not shown)
Direction (tangential direction being open) presss from both sides a predetermined angle C with the planar annular 242,
To form gas between the planar annular 242 and the wafer W bottom surface 34
Wall or air cushion, and the erosion of etching solution 19 or gas to the bottom surface 34 of wafer can be obstructed.
Specifically, the annular gas nozzle 26 is one of to wash on seat 24 circular slanting in the back of the body
Crack structure 262.Furthermore, the preset distance D between 10mm to 15mm, can
Gas wall preferably or air cushion effect are obtained, in the present embodiment, the preset distance D is
13mm.In addition, predetermined angle C angles are between 30 degree to 45 degree, it can equally obtain preferably
Gas wall or air cushion effect, in the present embodiment, the predetermined angle C are 40 degree.It is worth
One is mentioned that, the annular gas nozzle 26 is used to spray nitrogen, and sprays the stream of nitrogen
Amount to 150LPM, can obtain preferred ground vapour wall formation effect between 100LPM (public liter/min)
Really.In this embodiment, the flow for spraying nitrogen is 120LPM.
Refer to Fig. 2, except using above-mentioned annular gas nozzle 26 obstruct etching solution 19 or
Outside person's gas, the single-wafer wet type processing device 20 of the present embodiment further comprises that pure water sprays
First 28, the pure water shower nozzle 28 is opened in the back of the body and washed on the planar annular of seat 24
242, for spraying the bottom surface of the deionized water (DI water) to the crystal round fringes 32
34 rinse, further protection bottom surface 34.
It refer to the single-wafer of Fig. 5 and Fig. 6, Fig. 5 for the second preferred embodiment of the present invention
The schematic top plan view of wet type processing device, Fig. 6 is section signals of the Fig. 5 along B-B ' line segments
Figure.The single-wafer wet type processing device 40 of the present embodiment is used to prevent the bottom of crystal round fringes 32
Face 34 is by etching solution 19 or gas attack.The single-wafer wet type processing device of the present embodiment
40, which include rotary chuck 22, the back of the body, washes seat 24, annular gas nozzle 26, pure water shower nozzle 28
And an annular gas nozzle 27.Said elements may be disposed at etch chamber (not shown)
In, fluid supply unit 18 is additionally provided with rotary chuck 22, to provide etching solution 19 or clear
The fluids such as clean liquid.From unlike above-mentioned first embodiment, the single-wafer of the present embodiment is wet
Formula processing unit 40 further comprises annular gas nozzle 27, annular gas nozzle 27
Be opened in it is described the back of the body wash on the planar annular 242 of seat 24, and with the annular gas
Nozzle 26 is in concentric circles, to described in the planar annular 242 and the wafer W
Gas wall is formed between bottom surface 34, further to strengthen the barrier of gas (such as acid gas).
Furthermore, through the annular gas for being arranged at the inner ring of annular gas nozzle 26
Nozzle 27, the single-wafer wet type processing device 40 of the second preferred embodiment can be used for large scale
Wafer such as 12,18 inch etc., and obtain preferred preventing erosion effect.In addition, described
Annular gas nozzle 26 and annular gas nozzle 27 can be respectively connecting to the first source of the gas 271
And second source of the gas 272.First source of the gas 271 and the second source of the gas 272 can supply simultaneously nitrogen to
Annular gas nozzle 26 and annular gas nozzle 27, the first source of the gas can be also controlled respectively
271 and second source of the gas 272, without supplying nitrogen simultaneously, or only supply annular gas spray
One of both mouth 26 and annular gas nozzle 27.
In summary, single-wafer wet type processing device 20,40 of the invention is through setting institute
Preset space length P is stated between 2mm to 5mm, the preset distance D is between 10mm to 15mm
And the predetermined angle C is between 30 degree to 45 degree, and barrier wafer to be flowed to can be optimized
The etching solution 19 or gas of W bottom surface 34, and obtain splendid protecting effect.In addition,
Preferably, set the preset space length as 3mm, the preset distance be 13mm, it is pre-
Clamp angle be 40 degree and spray nitrogen flow be 120LPM, bottom surface 34 most preferably can be obtained
Protecting effect.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to this
Invention.Persond having ordinary knowledge in the technical field of the present invention, is not departing from the present invention
Spirit and scope in, when can be used for a variety of modifications and variations.Therefore, guarantor of the invention
Shield scope is worked as to be defined depending on the appended claims person of defining.
Although the present invention is disclosed above with preferred embodiment, above preferred embodiment is simultaneously
The limitation present invention is not used to, one of ordinary skill in the art is not departing from the present invention's
In spirit and scope, it can make various changes and retouching, therefore protection scope of the present invention
It is defined by the scope that claim is defined.
Claims (10)
1. a kind of single-wafer wet type processing device, for preventing the bottom surface of crystal round fringes from corroding,
It is characterised in that it includes：
Rotary chuck, for holding and rotating a wafer；
The back of the body washes seat, is arranged at around the rotary chuck, including planar annular, described
The bottom surface of planar annular and the wafer has preset space length, and the back of the body washes seat in the ring
Peripheral region is right-angle structure outside shape plane；And
Annular gas nozzle, is opened in the back of the body and washes on the planar annular of seat, and
With the crystal round fringes at a predetermined distance, and direction and the ring of gas are sprayed
The predetermined angle of shape plane holder, to described in the planar annular and the wafer
Gas wall is formed between bottom surface；
Wherein described preset space length between 2mm to 5mm, the preset distance between
10mm is to 15mm, and the predetermined angle is between 30 degree to 45 degree.
2. single-wafer wet type processing device according to claim 1, it is characterised in that
The outer peripheral edge of the planar annular is approximately equal to the crystal round fringes, and the right angle knot
Structure about trims the crystal round fringes.
3. single-wafer wet type processing device according to claim 1, it is characterised in that
The preset space length is 3mm.
4. single-wafer wet type processing device according to claim 1, it is characterised in that
The preset distance is 13mm.
5. single-wafer wet type processing device according to claim 1, it is characterised in that
The predetermined angle is 40 degree.
6. single-wafer wet type processing device according to claim 1, it is characterised in that
The annular gas nozzle is one of to wash on seat circular slanting crack structure in the back of the body.
7. single-wafer wet type processing device according to claim 1, it is characterised in that
The annular gas nozzle is used to spray nitrogen, and spray the flow of nitrogen between
100LPM (public liter/min) to 150LPM.
8. single-wafer wet type processing device according to claim 7, it is characterised in that
The flow for spraying nitrogen is 120LPM.
9. single-wafer wet type processing device according to claim 1, it is characterised in that
Further comprise annular gas nozzle, it is opened in the ring carried on the back and wash seat
In shape plane, and it is in concentric circles with the annular gas nozzle, in the ring
Gas wall is formed between shape plane and the bottom surface of the wafer.
10. single-wafer wet type processing device according to claim 1, it is characterised in that
Further comprise pure water shower nozzle, the pure water shower nozzle is opened in the institute carried on the back and wash seat
State on planar annular, rinsed for the bottom surface to the crystal round fringes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610023209.9A CN106971958A (en) | 2016-01-14 | 2016-01-14 | Single-wafer wet type processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610023209.9A CN106971958A (en) | 2016-01-14 | 2016-01-14 | Single-wafer wet type processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106971958A true CN106971958A (en) | 2017-07-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610023209.9A Pending CN106971958A (en) | 2016-01-14 | 2016-01-14 | Single-wafer wet type processing device |
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| CN (1) | CN106971958A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021536A (en) * | 2018-01-10 | 2019-07-16 | 弘塑科技股份有限公司 | Substrate board treatment |
| CN111403323A (en) * | 2020-04-27 | 2020-07-10 | 绍兴同芯成集成电路有限公司 | Etching device for wafer and annular glass carrier plate |
| CN111453996A (en) * | 2020-03-05 | 2020-07-28 | 绍兴同芯成集成电路有限公司 | Manufacturing method of annular glass carrier plate |
| TWI707728B (en) * | 2020-01-06 | 2020-10-21 | 大陸商業成科技（成都）有限公司 | Improved grinding and cleaning device |
| CN112309950A (en) * | 2019-07-26 | 2021-02-02 | 上海宏轶电子科技有限公司 | Wafer cleaning machine platform |
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| CN100576457C (en) * | 2007-03-30 | 2009-12-30 | 胜高股份有限公司 | The one chip engraving method and the etching machines thereof of wafer |
| CN103805997A (en) * | 2012-11-12 | 2014-05-21 | 茂迪股份有限公司 | Wet-type etching method and substrate bearing device |
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| JPS54113265A (en) * | 1978-02-23 | 1979-09-04 | Mitsubishi Electric Corp | Resistor developing equipement |
| JPS5754321A (en) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Retaining device for base plate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021536A (en) * | 2018-01-10 | 2019-07-16 | 弘塑科技股份有限公司 | Substrate board treatment |
| CN110021536B (en) * | 2018-01-10 | 2023-03-31 | 弘塑科技股份有限公司 | Substrate processing apparatus |
| CN112309950A (en) * | 2019-07-26 | 2021-02-02 | 上海宏轶电子科技有限公司 | Wafer cleaning machine platform |
| TWI707728B (en) * | 2020-01-06 | 2020-10-21 | 大陸商業成科技（成都）有限公司 | Improved grinding and cleaning device |
| CN111453996A (en) * | 2020-03-05 | 2020-07-28 | 绍兴同芯成集成电路有限公司 | Manufacturing method of annular glass carrier plate |
| CN111403323A (en) * | 2020-04-27 | 2020-07-10 | 绍兴同芯成集成电路有限公司 | Etching device for wafer and annular glass carrier plate |
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Application publication date: 20170721 |
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