KR20060128559A - Surface process method for prevention whisker using ag under plating - Google Patents

Surface process method for prevention whisker using ag under plating Download PDF

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KR20060128559A
KR20060128559A KR1020050050086A KR20050050086A KR20060128559A KR 20060128559 A KR20060128559 A KR 20060128559A KR 1020050050086 A KR1020050050086 A KR 1020050050086A KR 20050050086 A KR20050050086 A KR 20050050086A KR 20060128559 A KR20060128559 A KR 20060128559A
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plating
silver
acid
whisker
semiconductor component
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KR1020050050086A
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Korean (ko)
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KR100712669B1 (en
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김종호
배종건
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에스피텍 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames

Abstract

A surface treatment method for prevention whisker using Ag under plating is provided to remove fatal defection factors such as electrical short and stably enable semiconductor components to be used permanently by solving a whisker problem in embodiment of pure tin. A surface treatment method for prevention whisker using Ag under plating comprises: an electrocleaning process(10) of electrochemically removing mold flash or resin generated in a molding process using a thermosetting resin(EMC); a pretreatment process(20) of removing a lead frame oxide layer generated while proceeding heat treatment at a high temperature; a pickling process(30) of etching the lead frame using an acid; an Ag under plating process(35) of coating silver(Ag) on an upper portion of a semiconductor component passing through the pickling process to form a silver plating layer; a pure Sn plating process(40) of forming a pure Sn plating layer by plating pure tin(Sn) on an upper portion of the semiconductor component having the silver plating layer formed thereon by the Ag under plating process; and a posttreatment process(50) of neutralizing the semiconductor component contaminated with the acid by using alkaline chemicals.

Description

은 하지도금을 이용한 휘스커 방지용 표면처리방법{SURFACE PROCESS METHOD FOR PREVENTION WHISKER USING Ag UNDER PLATING}Surface treatment method for whisker prevention using silver base plating {SURFACE PROCESS METHOD FOR PREVENTION WHISKER USING Ag UNDER PLATING}

도 1은 종래 기술에 따른 도금공정을 설명하기 위한 공정도,1 is a process chart for explaining a plating process according to the prior art,

도 2는 휘스커(Whisker)를 설명하기 위한 도면2 is a view for explaining a whisker

도 3은 본 발명에 따른 은 하지도금을 이용한 휘스커 방지용 표면처리방법을 설명하기 위한 공정도,Figure 3 is a process chart for explaining the whisker prevention surface treatment method using a silver base plating according to the present invention,

도 4는 도 3의 공정에 따라 표면처리가 이루어진 반도체 부품의 표면을 도시한 도면이다.4 illustrates a surface of a semiconductor component having a surface treatment according to the process of FIG. 3.

*** 도면의 주요부분에 대한 부호 설명 ****** Explanation of symbols on main parts of drawing ***

10 : 전해세정공정 20 : 전처리공정10: electrolytic cleaning process 20: pretreatment process

30 : 산세공정 35 : 은하지 도금공정30 pickling process 35 galvanizing process

40 : 순수주석 도금공정 50 : 후처리공정40: pure tin plating process 50: after treatment process

본 발명은 은 하지도금을 이용한 휘스커 방지용 표면처리방법에 관한 것이다.The present invention relates to a whisker preventing surface treatment method using silver base plating.

보다 상세하게는, 순수 주석(Pure Tin)을 구현하는데 있어 휘스커(Whisker) 문제를 해결하여 전기적 쇼트와 같은 치명적인 결함요인을 제거하고 안정적으로 반도체 부품을 영구히 사용할 수 있도록 하기 위한 은 하지도금을 이용한 휘스커 방지용 표면처리방법에 관한 것이다.More specifically, whiskers using silver base plating to solve the whisker problem in realizing pure tin, to eliminate fatal defects such as electrical shorts and to reliably use semiconductor components permanently. It relates to a surface treatment method for prevention.

현재 전자 산업 분야에서 납땜이 필요한 반도체 부품은 Sn/Pb 합금을 이용하여 표면 처리를 진행하고 있다. 즉 상기 표면처리공정은 첨부 도면 도 1에 도시된 바와 같이 전해세정공정(10), 전처리공정(20), 산세공정(30), 도금공정(40), 후처리공정(50)로 이루어져 있다. Currently, semiconductor components requiring soldering in the electronics industry are undergoing surface treatment using Sn / Pb alloys. That is, the surface treatment process includes an electrolytic cleaning process 10, a pretreatment process 20, a pickling process 30, a plating process 40, and a post treatment process 50, as shown in FIG. 1.

상기 전해 세정 공정(10)은 반도체 제품 조립 공정중 하나인 열경화성 수지(EMC)를 이용한 몰딩(Molding) 공정 중 발생하는 Mold Flash 혹은 Resin을 전기화학적으로 제거하기 위한 공정이다.The electrolytic cleaning process 10 is a process for electrochemically removing mold flash or resin generated during a molding process using a thermosetting resin (EMC), which is one of semiconductor product assembly processes.

상기 전처리 공정(20)은 조립 공정 중 다이어테치큐어(Die Attach Cure)나 포스트몰딩큐어(Post Molding Cure)등 고온에서 열처리를 진행하는 과정에서 발생되는 리드프레임(Lead frame) 산화층을 약품을 이용하여 제거하는 공정이다.The pretreatment process 20 uses a lead frame oxide layer generated during a heat treatment at a high temperature such as a die attach cure or a post molding cure during the assembling process using chemicals. It is a process of removal.

상기 산세 공정(30)은 도금 공정 직전에 마지막으로 리드프레임(Lead frame )을 산(Acid)을 이용하여 미세하게 에칭(Etching) 시키는 공정이다. The pickling process 30 is a process in which a lead frame is etched finely using an acid, just before the plating process.

상기 도금 공정(40)은 전처리가 완료된 리드프레임(Lead frame) 상부에 전기 적으로 에스엔/피비(Sn/Pb) 이원 합금을 도금하는 공정이다.The plating process 40 is a process of electrically plating the S / Pb binary alloy on the lead frame having completed pretreatment.

상기 후처리 공정(50)은 도금 공정까지 진행하면서 산(Acid) 성분으로 오염된 제품을 알칼리 약품으로 이용하여 중화시켜 주는 공정이다.The post-treatment process 50 is a process of neutralizing the product contaminated with an acid component as an alkali chemical while proceeding to the plating process.

SnPb 합금으로 이루어진 표면처리공정은 Pb의 맹독성이 인체 및 환경에 유해하므로 국제적으로 납사용을 규제하고 있다.The surface treatment process made of SnPb alloys regulates the use of lead internationally because the toxicity of Pb is harmful to humans and the environment.

그 일환으로 이미 Sn/Bi 제품이 양산되고 있으나, 이 또한 Pb를 제조하는 과정에 발생되는 부산물로 향후 사용 금지가 예상된다 할 것이다.As part of this, Sn / Bi products have already been mass-produced, but this is also a by-product generated in the process of manufacturing Pb.

따라서, 세계 각국별로 순수 주석(Pure Tin)에 대한 연구가 활발히 진행되고 있으나, 이를 구현함에 있어서 가장 큰 문제점은 휘스커(Whisker) 성장에 의한 제품 파손이라는 치명적인 결함이 있어 이를 억제 및 제거하는 핵심 기술 개발이 절실하게 요구되고 있다.Therefore, research on pure tin is actively being conducted in various countries around the world, but the biggest problem in realizing this is that there is a fatal defect such as product damage caused by whisker growth. This is desperately required.

이때, 휘스커(Whisker) 란 첨부 도면 도 2에 도시된 바와 같이 금속소자와 Sn 도금층 사이의 계면층 사이에서 발생된 내부 응력(Internal Stress)에 의하여 돌출된 Sn 단결정으로서, 전기회로에 쇼트현상을 일으키게 되어 제품을 파손시키는데 결정적인 원인으로 작용하게 된다.At this time, the whisker is a Sn single crystal protruding by an internal stress generated between the interface layer between the metal element and the Sn plating layer, as shown in FIG. 2, to cause short circuit in the electric circuit. As a result, it is a decisive cause of product damage.

본 발명은 상기와 같이 핵심 기술 개발 요구에 부응하기 위해 안출된 것으로, 본 발명의 목적은 순수 주석(Pure Tin)을 구현하는데 있어 휘스커(Whisker) 문제를 해결하여 전기적 쇼트와 같은 치명적인 결함요인을 제거하고 안정적으로 반도 체 부품을 영구히 사용할 수 있도록 하기 위한 은 하지도금을 이용한 휘스커 방지용 표면처리방법을 제공함에 있다.The present invention has been made to meet the core technology development needs as described above, the object of the present invention is to solve the Whisker problem in the implementation of Pure Tin (elimination of critical defects such as electrical short) To provide a whisker prevention surface treatment method using a silver base plating to enable permanent and stable use of semiconductor components.

상기와 같은 기술적 과제를 해결하기 위하여 제안된 본 발명의 일 실시예는, 경화성 수지(EMC)를 이용한 몰딩(Molding) 공정 중 발생하는 Mold Flash 또는 Resin을 전기화학적으로 제거하기 위한 전해세정공정; 고온에서 열처리를 진행 중 발생되는 리드프레임(Lead frame) 산화층을 제거하기 위한 전처리공정; 상기 리드프레임(Lead frame)을 산(Acid)을 이용하여 에칭(Etching)시키기 위한 산세공정; 상기 산세공정을 거친 반도체 부품 상부에 은을 도포하여 은 도금층을 형성시키는 은(Ag)하지 도금공정; 상기 은하지 도금공정에 의해 은 도금층이 형성된 반도체 부품 상부를 순수주석으로 도금하여 순수 주석 도금층을 형성하는 순수주석 도금공정; 및 상기 산(Acid)성분으로 오염된 반도체 부품을 알칼리 약품으로 이용하여 중화시켜 주기 위한 후처리공정으로 이루어진 것을 특징으로 한다.One embodiment of the present invention proposed to solve the above technical problem, the electrolytic cleaning process for electrochemically removing the Mold Flash or Resin generated during the molding (Molding) process using a curable resin (EMC); A pretreatment step for removing a lead frame oxide layer generated during the heat treatment at a high temperature; Pickling process for etching the lead frame (Acid) using acid (Acid); A silver (Ag) not plating process of forming silver plating layer by applying silver on the semiconductor component which has undergone the pickling process; Pure tin plating process of forming a pure tin plating layer by plating the upper portion of the semiconductor component with a silver plating layer by the tin plating process with pure tin; And a post-treatment step for neutralizing the semiconductor component contaminated with the acid component as an alkali chemicals.

이하, 첨부한 도면을 참조하여 은 하지도금을 이용한 휘스커 방지용 표면처리방법에 대해 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a surface treatment method for whiskers using silver base plating.

은 하지 도금(Ag Under Plating)을 이용한 휘스커(Whisker) 성장 억제 방법의 원리에 대해 첨부 도면 도 7 및 도 8를 참조하여 간단히 설명하면, 기존 Cu 소 재와 Sn 도금층 계면 사이에 형성된 층간 화합물(Intermetallic Compound : Cu6Sn5)은 매우 불규칙하게 형성되고, 시간/습도/온도 등 외부 환경에 따라 층 내부의 Stress가 발생되며, 이로 인하여 외층 Sn 단결정이 외부로 돌출되는 문제점을 안고 있다. 그러나 Cu 소재 상부에 Ag 도금층을 도포하고 다시 그 상부에 Sn 도금층을 올릴 경우 층간 화합물(Intermetallinc Compound: Cu6Sn5) 발생을 막을 수 있으며 이때 또 다른 층간 화합물(Ag3Sn)이 형성된다. 즉 동 화합물은 Cu 소재위에 매우 고르게 형성되어 층 내부의 Stress를 최소화 할 수 있다. 이로 인하여 외층의 Sn 결정이 성장하는 것을 막을 수 있다. The principle of the Whisker growth inhibition method using Ag Under Plating will be briefly described with reference to FIGS. 7 and 8. An intermetallic compound formed between an existing Cu material and an Sn plating layer interface is described. Compound: Cu 6 Sn 5 ) is very irregular, and the stress inside the layer is generated according to the external environment such as time / humidity / temperature, which causes a problem that the outer layer Sn single crystal protrudes to the outside. However, when the Ag plating layer is coated on the Cu material and the Sn plating layer is again placed on the Cu material, an intermetallic compound (Cu 6 Sn 5 ) may be prevented from occurring, and another interlayer compound (Ag 3 Sn) may be formed. That is, the copper compound is formed very evenly on the Cu material to minimize the stress inside the layer. This can prevent the growth of Sn crystals in the outer layer.

또한, 상기와 같은 공정은 별도의 장비를 이용하여 제작하기 보다는 기존 도금 장비 내에 일련의 단계(In-Line)로 구성하여 양산 적용이 쉽고 간편하게 처리할 수 있다.In addition, the process as described above can be easily and easily applied to mass production by configuring a series of steps (In-Line) in the existing plating equipment rather than using a separate equipment.

즉, 표면처리를 위한 반도체 부품은 첨부 도면 도 3에 도시된 바와 같이, 세정조에 인입되어 경화성 수지(EMC)를 이용한 몰딩(Molding) 공정 중 발생하는 Mold Flash 혹은 Resin을 전기화학적으로 제거하는 전해세정공정(10)을 거친 후 다시 전처리 조로 인입된다.That is, as shown in FIG. 3, the semiconductor component for surface treatment is introduced into a cleaning bath to electrochemically remove mold flash or resin generated during a molding process using a curable resin (EMC). After passing through the step (10), it is drawn back into the pretreatment tank.

그리고, 전처리 조에 인입된 반도체 부품은 조립 공정 중 다이어테치큐어(Die Attach Cure)나 포스트몰딩큐어(Post Molding Cure )등 고온에서 열처리를 진행하는 과정에서 발생되는 리드프레임(Lead frame) 산화층을 약품을 이용하여 제거하는 전처리 공정(20)을 거친 후 다시 산세공정(30)을 위해 산세공정 조에 인입된 다. In addition, the semiconductor component introduced into the pretreatment tank is used to remove the lead frame oxide layer generated during the heat treatment at a high temperature such as die attach cure or post molding cure during the assembly process. After the pretreatment process (20) to remove by using it is introduced into the pickling process tank again for the pickling process (30).

그리고, 도금 공정 직전에 마지막으로 리드프레임(Lead frame )을 산(Acid)을 이용하여 미세하게 에칭(Etching) 시키는 공정인 산세공정(30)을 거친 반도체 부품은 은하지 도금공정(35)을 위해 은하지 도금 조로 인입되고, 은하지 도금 조의 도포수단은 반도체 부품 소재 금속 상부에 전기 화학적 도금을 이용하여 은도금층이 형성되도록 한다. 이때, 상기 은하지 도금공정(35)은 0.5ASD 의 전류밀도, 0.1㎛의 두께, 40℃의 온도를 은하지 도금 조건으로 하여 이루어지며, 물론 상기 파라미터 이외에 다양한 파라미터가 존재하며, 파라미터에 의해 은하지 도금 공정의 도금 환경이 달라진다 할 것이다.In addition, the semiconductor component that has undergone the pickling process 30, which is a process of finely etching the lead frame using acid, immediately before the plating process, is used for the galactic plating process 35. It is drawn into the galvanizing bath, and the application means of the galvanizing bath allows the silver plating layer to be formed on the semiconductor component material metal by using electrochemical plating. At this time, the galactic plating process 35 is made with a galvanic plating condition of a current density of 0.5ASD, a thickness of 0.1㎛, a temperature of 40 ℃, of course, there are a variety of parameters in addition to the above parameters, by the parameters The plating environment of the edge plating process will be different.

상기와 같이 반도체 부품 상부에 은하지 도금층이 형성되면 순수주석 도금공정(40)을 위해 다시 순수주석 도금 조로 인입되고, 상기 은하지 도금공정(35)에 의해 은 도금층이 형성된 반도체 부품 소재 금속 상부에 전기적으로 순수 주석이 도금되도록 하는 도금공정을 거쳐 순수 주석 도금층을 형성한다.When the galvanizing layer is formed on the upper part of the semiconductor component as described above, it is introduced into the pure tin plating bath again for the pure tin plating process 40, and on the semiconductor component material metal on which the silver plating layer is formed by the galactic plating process 35. The pure tin plating layer is formed through a plating process to electrically plate the pure tin.

마지막으로, 후처리공정(50)을 위해 후처리 조로 인입되어 도금 공정까지 진행하면서 산(Acid) 성분으로 오염된 반도체 부품을 알칼리 약품으로 이용하여 중화시켜 주는 후처리 공정이 이루어진다.Finally, a post-treatment process is introduced to neutralize the semiconductor component contaminated with an acid component as an alkali chemical while being introduced into the post-treatment tank for the post-treatment process 50 and proceeding to the plating process.

상기와 같이 은하지 도금층이 형성된 반도체 부품의 표면은 첨부 도면 도 4 내지 도 6에 도시된 바와 같이 크랙이 없으며, 납땜성이 우수할 뿐만 아니라, 휘스커(Whisker)가 제거되었음을 알 수 있다.As shown in FIG. 4 to FIG. 6, the surface of the semiconductor component having the galvanized layer formed as described above is free of cracks, excellent solderability, and whiskers.

이상의 본 발명은 상기 실시예들에 의해 한정되지 않고, 당업자에 의해 다양한 변형 및 변경을 가져올 수 있으며, 이는 첨부된 청구항에서 포함되는 본 발명의 취지와 범위에 포함된다.The present invention is not limited to the above embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention included in the appended claims.

상기와 같은 구성 및 작용 그리고 바람직한 실시예를 가지는 본 발명은 순수 주석(Pure Tin)을 구현하는데 있어 Whisker 문제를 해결하여 전기적 쇼트와 같은 치명적인 결함요인을 제거하고 안정적으로 반도체 부품을 영구히 사용할 수 있도록 하는 효과가 있다.The present invention having the configuration and operation and the preferred embodiment as described above solves the Whisker problem in implementing pure tin to remove fatal defects such as electrical shorts and to stably use the semiconductor component for stable use. It works.

Claims (2)

경화성 수지(EMC)를 이용한 몰딩(Molding) 공정 중 발생하는 Mold Flash 또는 Resin을 전기화학적으로 제거하기 위한 전해세정공정;An electrolytic cleaning process for electrochemically removing Mold Flash or Resin generated during a molding process using a curable resin (EMC); 고온에서 열처리를 진행 중 발생되는 리드프레임(Lead frame) 산화층을 제거하기 위한 전처리공정; A pretreatment step for removing a lead frame oxide layer generated during the heat treatment at a high temperature; 상기 리드프레임(Lead frame)을 산(Acid)을 이용하여 에칭(Etching)시키기 위한 산세공정; Pickling process for etching the lead frame (Acid) using acid (Acid); 상기 산세공정을 거친 반도체 부품 상부에 은을 도포하여 은 도금층을 형성시키는 은(Ag)하지 도금공정; A silver (Ag) not plating process of forming silver plating layer by applying silver on the semiconductor component which has undergone the pickling process; 상기 은하지 도금공정에 의해 은 도금층이 형성된 반도체 부품 상부를 순수주석으로 도금하여 순수 주석 도금층을 형성하는 순수주석 도금공정; 및Pure tin plating process of forming a pure tin plating layer by plating the upper portion of the semiconductor component with a silver plating layer by the tin plating process with pure tin; And 상기 산(Acid)성분으로 오염된 반도체 부품을 알칼리 약품으로 이용하여 중화시켜 주기 위한 후처리공정으로 이루어진 것을 특징으로 하는 은 하지도금을 이용한 휘스커 방지용 표면처리방법.Whisker prevention surface treatment method using a silver base plating, characterized in that the post-treatment step for neutralizing the semiconductor component contaminated with the acid (Acid) component as an alkali chemicals. 제 1 항에 있어서, 상기 은하지 도금공정은,The method of claim 1, wherein the galactic plating process, 0.5ASD 의 전류밀도, 0.1㎛의 두께, 40℃의 온도를 은하지 도금 조건으로 하여 이루어지는 것을 특징으로 하는 은 하지도금을 이용한 휘스커 방지용 표면처리 방법.A surface treatment method for whisker prevention using silver base plating, comprising a current density of 0.5ASD, a thickness of 0.1 μm, and a temperature of 40 ° C. under galvanizing conditions.
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KR100831025B1 (en) * 2007-07-13 2008-05-20 (주) 세기정밀 Apparatus for preventing whisker of semiconductor parts
US9840785B2 (en) 2014-04-28 2017-12-12 Samsung Electronics Co., Ltd. Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution

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JP2002289653A (en) * 2001-03-26 2002-10-04 Hitachi Cable Ltd Semiconductor device tape carrier and its manufacturing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100831025B1 (en) * 2007-07-13 2008-05-20 (주) 세기정밀 Apparatus for preventing whisker of semiconductor parts
US9840785B2 (en) 2014-04-28 2017-12-12 Samsung Electronics Co., Ltd. Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution

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