JP5302140B2 - Removal method of displacement plating layer - Google Patents

Removal method of displacement plating layer Download PDF

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JP5302140B2
JP5302140B2 JP2009201262A JP2009201262A JP5302140B2 JP 5302140 B2 JP5302140 B2 JP 5302140B2 JP 2009201262 A JP2009201262 A JP 2009201262A JP 2009201262 A JP2009201262 A JP 2009201262A JP 5302140 B2 JP5302140 B2 JP 5302140B2
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plating layer
peeling
electrolytic
metal
gold plating
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JP2011052259A (en
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泉 神通川
利幸 青木
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Shinko Electric Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description

本発明は置換めっき層の剥離方法に関する。   The present invention relates to a method for peeling a displacement plating layer.

電子部品用部材として、図２に示す半導体装置用部材が知られている。図２に示す半導体装置用部材１０は、本体部材としての金属製のステム１２に貫通孔１４，１４が形成されている。かかる貫通孔１４，１４の各々には、絶縁層としての低融点ガラス層１６が充填されて金属部材としてのリード線１８，１８が挿通されている。リード線１８，１８は、ステム１２と電気的に絶縁されて、両端部がステム１２から突出している。
かかるステム１２の一面側には、金属製のヒートシンク２０が装着されている。このヒートシンク２０の一面側２０ａに半導体素子が搭載される。
更に、半導体装置用部材１０のヒートシンク２０の搭載面側に突出しているリード線１８，１８の一端部１８ａ，１８ａは、ヒートシンク２０の一面側２０ａに搭載される半導体素子とワイヤボンディングされて、電気的に接続される。 2. Description of the Related Art A semiconductor device member shown in FIG. 2 is known as an electronic component member. The semiconductor device member 10 shown in FIG. 2 has through holes 14 and 14 formed in a metal stem 12 as a main body member. Each of the through holes 14 and 14 is filled with a low melting point glass layer 16 as an insulating layer, and lead wires 18 and 18 as metal members are inserted. The lead wires 18 and 18 are electrically insulated from the stem 12, and both end portions protrude from the stem 12.
A metal heat sink 20 is mounted on one side of the stem 12. A semiconductor element is mounted on one surface side 20 a of the heat sink 20.
Furthermore, one end portions 18a and 18a of the lead wires 18 and 18 projecting to the mounting surface side of the heat sink 20 of the semiconductor device member 10 are wire-bonded to a semiconductor element mounted on the one surface side 20a of the heat sink 20 to be electrically Connected.

図２に示す半導体装置用部材１０では、リード線１８，１８のステム１２の両面側に突出する突出部には、通常、電解金めっきが施される。
かかる電解金めっきは、例えば下記特許文献１に提案されている図３に示す治具３０を用いて施す。
図３に示す治具３０は、絶縁基板２２の一面側に配設された電極２４上に、ゴム等の弾性材料から成る複数本の細長い棒状部材２６，２６・・が配列されているものである。かかる治具３０に半導体装置用部材１０を装着する際には、リード線１８，１８の各他端部を棒状部材２６，２６間に挿入し、その端面を電極２４に当接する。
次いで、半導体装置用部材１０を装着した治具３０を、図４に示す様に、電解金めっき液２８に浸漬し、治具３０の電極２４を陰極とすると共に、電解金めっき液に浸漬されている電極３２を陽極として、電極２４，３２間に直流電源３４から直流電流を印加して電解金めっきを施す。 In the member 10 for a semiconductor device shown in FIG. 2, electrolytic gold plating is usually applied to the protruding portions of the lead wires 18, 18 protruding from both sides of the stem 12.
Such electrolytic gold plating is performed, for example, using a jig 30 shown in FIG.
3 includes a plurality of elongated rod-like members 26, 26,... Made of an elastic material such as rubber on an electrode 24 disposed on one side of an insulating substrate 22. The jig 30 shown in FIG. is there. When the semiconductor device member 10 is mounted on the jig 30, the other end portions of the lead wires 18 and 18 are inserted between the rod-shaped members 26 and 26, and the end surfaces thereof are in contact with the electrodes 24.
Next, as shown in FIG. 4, the jig 30 on which the semiconductor device member 10 is mounted is immersed in the electrolytic gold plating solution 28, and the electrode 24 of the jig 30 is used as a cathode and is immersed in the electrolytic gold plating solution. Electrolytic gold plating is performed by applying a direct current from a direct current power supply 34 between the electrodes 24 and 32 using the electrode 32 as an anode.

特開２００５−３３６５６４号公報JP 2005-336564 A

図４に示す電解金めっきでは、半導体装置用部材１０のリード線１８，１８のみに通電がなされるため、リード線１８，１８のステム１２から突出する突出部のみに電解金めっきが施される。
しかし、電解金めっきの際に、ステム１２やヒートシンク２０の表面に置換金めっき層が形成されることがある。かかる置換めっき層は、電解めっき層に比較して密着度が低いため、置換金めっき層を除去することが必要である。
しかしながら、置換金めっき層の除去は、通常、電解金めっきを終了した半導体装置用部材１０を剥離液に浸漬して行うため、リード線１８，１８の突出部に形成した電解金めっき層も同時に剥離される。このため、従来、リード線１８，１８の突出部に形成する電解金めっき層を、必要厚さよりも厚付けすることが行われている。
かかる電解金めっき層の厚付けは、電解金めっき時間を長くし、且つ資源の無駄となって、最終製品の製造コストが高くなる。
そこで、本発明は、置換めっき層を剥離する際に、電解めっき層も同時に剥離する従来の置換めっき層の剥離方法の課題を解決し、電解めっき層を実質的に剥離せずに置換めっき層を選択的に剥離できる置換めっき層の剥離方法を提供することを目的とする。 In the electrolytic gold plating shown in FIG. 4, since only the lead wires 18 and 18 of the semiconductor device member 10 are energized, only the protruding portions protruding from the stem 12 of the lead wires 18 and 18 are subjected to electrolytic gold plating. .
However, a substitution gold plating layer may be formed on the surface of the stem 12 or the heat sink 20 during electrolytic gold plating. Since the displacement plating layer has a lower degree of adhesion than the electrolytic plating layer, it is necessary to remove the displacement gold plating layer.
However, since the replacement gold plating layer is usually removed by immersing the semiconductor device member 10 after electrolytic gold plating in a stripping solution, the electrolytic gold plating layer formed on the protruding portions of the lead wires 18 and 18 is also simultaneously removed. It is peeled off. For this reason, conventionally, the electrolytic gold plating layer formed on the protruding portions of the lead wires 18 and 18 is thicker than the required thickness.
Such thickening of the electrolytic gold plating layer lengthens the electrolytic gold plating time, wastes resources, and increases the production cost of the final product.
Therefore, the present invention solves the problem of the conventional method of peeling the displacement plating layer, in which the electrolytic plating layer is also peeled at the same time when the displacement plating layer is peeled off, and the displacement plating layer without substantially peeling the electrolytic plating layer. It is an object of the present invention to provide a method for peeling a displacement plating layer that can selectively peel off.

本発明者等は、前記課題を解決すべく検討した結果、図４に示す電解金めっきの際に給電したリード線１８，１８の露出面に電解金めっき層を形成した半導体装置用部材１０を、金めっきの剥離性能を有し、且つ電解質が添加された剥離液に浸漬して、リード線１８，１８を陰極にして直流電流を給電することによって、リード線１８，１８に形成した電解金めっき層を剥離することなく、非通電状態のステム１２やヒートシンク２０の表面に析出した置換めっき層を選択的に除去できることを見出した。
すなわち、本発明者等は、前記課題を解決する手段として、本体部材の表面を形成する金属と電気的に絶縁されて金属部材が装着された電子部品用部材に、前記金属部材のみに給電する電解めっきによって、前記金属部材の露出面に電解めっき層を形成した後、前記電解めっきの際に、非通電状態の金属表面に析出した置換めっき層を除去すべく、前記電子部品用部材を、前記電解めっき層を形成するめっき金属を剥離する剥離性能を有し、且つ電解質が添加された剥離液に浸漬して、前記金属部材に給電しつつ、前記置換めっき層を前記剥離液によって選択的に剥離する置換めっき層の剥離方法を提供できる。 As a result of studying to solve the above-mentioned problems, the present inventors have obtained a semiconductor device member 10 in which an electrolytic gold plating layer is formed on the exposed surfaces of the lead wires 18 and 18 fed during the electrolytic gold plating shown in FIG. Electrolytic gold formed on the lead wires 18 and 18 by immersing in a peeling solution having gold plating peeling performance and adding an electrolyte and supplying a direct current with the lead wires 18 and 18 as cathodes It has been found that the replacement plating layer deposited on the surfaces of the stem 12 and the heat sink 20 in a non-energized state can be selectively removed without peeling off the plating layer.
That is, as a means for solving the above problems, the present inventors supply power only to the metal member to a member for an electronic component that is electrically insulated from the metal forming the surface of the main body member and mounted with the metal member. After the electrolytic plating layer is formed on the exposed surface of the metal member by electrolytic plating, the member for electronic component is removed in order to remove the displacement plating layer deposited on the non-energized metal surface during the electrolytic plating. The replacement plating layer is selectively removed by the stripping solution, having a stripping performance for stripping the plating metal forming the electrolytic plating layer, and immersing in a stripping solution to which an electrolyte is added to supply power to the metal member. It is possible to provide a method for peeling a displacement plating layer that is peeled off.

本発明者等が提供した課題を解決する手段において、下記の好ましい態様を上げることができる。
電子部品用部材として、本体部材としての金属製のステムに形成された貫通孔内に充填された絶縁層によって、前記ステムと電気的に絶縁されて金属部材としてのリード線が挿通されている電子部品用部材を好適に用いることができる。
また、電解めっきを施した電子部品用部材の本体部材から突出する金属部材の突出端を治具に挿入して、前記治具内に設けられた電極に前記突出端の少なくとも一部が接触した状態で、前記電子部品用部材及び治具を剥離液に浸漬し、前記剥離用治具の電極に給電することによって、電解めっき層が形成された金属部材のみに確実に給電できる。
尚、電解めっきとして、電解金めっきを採用し、剥離液として金めっき用の剥離液を好適に用いることができる。 In the means for solving the problems provided by the present inventors, the following preferred embodiments can be raised.
An electronic component that is electrically insulated from the stem by an insulating layer filled in a through hole formed in a metal stem as a main body member, and a lead wire as a metal member is inserted as an electronic component member A component member can be suitably used.
Also, the protruding end of the metal member protruding from the main body member of the electronic component member subjected to electrolytic plating was inserted into the jig, and at least a part of the protruding end was in contact with the electrode provided in the jig In this state, the electronic component member and the jig are immersed in a stripping solution, and power is supplied to the electrode of the stripping jig, so that power can be reliably supplied only to the metal member on which the electrolytic plating layer is formed.
In addition, electrolytic gold plating is employ | adopted as electrolytic plating, and the peeling liquid for gold plating can be used suitably as peeling liquid.

本発明者等が提案した置換めっき層の剥離方法によれば、電解めっきを施した電子部品用部材を、電解めっき層を形成するめっき金属を剥離する剥離性能を有し、且つ電解質が添加された剥離液に浸漬して、金属部材に給電する。このため、金属部材に形成した電解めっき層を形成するめっき金属の溶出を防止できる。
一方、電解めっきの際に、給電されなかった非通電状態の金属表面には、剥離液中でも給電されず、非通電状態の金属表面に形成された置換めっき層は剥離液の剥離機能によって剥離される。
この様に、本発明者等が提案した置換めっき層の剥離方法によれば、電解めっきで給電して金属部材に形成した電解めっき層を剥離することなく、電解めっきでは給電されなかった非通電状態の金属表面に形成された置換めっき層のみを選択的に剥離できる。
従って、本発明者等が提案した置換めっき層の剥離方法によれば、電解めっき層を厚付けすることなく置換めっき層のみを剥離できる。このため、電解めっき時間を短縮でき、且つ省資源を図ることができる結果、最終製品の製造コストの低減を図ることができる。 According to the method for peeling a substitution plating layer proposed by the present inventors, an electronic component member subjected to electrolytic plating has a peeling performance for peeling a plating metal forming an electrolytic plating layer, and an electrolyte is added. It is immersed in the stripping solution and power is supplied to the metal member. For this reason, the elution of the plating metal which forms the electrolytic plating layer formed in the metal member can be prevented.
On the other hand, during electroplating, the non-energized metal surface that was not supplied with power is not supplied with power even in the stripping solution, and the displacement plating layer formed on the non-energized metal surface is stripped by the stripping solution stripping function. The
In this way, according to the method of peeling the replacement plating layer proposed by the present inventors, the non-energization that was not supplied with electroplating without peeling off the electroplating layer formed on the metal member by feeding with electroplating. Only the displacement plating layer formed on the metal surface in the state can be selectively peeled off.
Therefore, according to the displacement plating layer peeling method proposed by the present inventors, it is possible to peel only the displacement plating layer without increasing the thickness of the electrolytic plating layer. For this reason, as a result of shortening the electrolytic plating time and saving resources, the manufacturing cost of the final product can be reduced.

本発明者等が提案した置換めっき層の剥離方法で採用する剥離工程を説明する説明図である。It is explanatory drawing explaining the peeling process employ | adopted with the peeling method of the displacement plating layer which the present inventors proposed. 本発明者等が提案した置換めっき層の剥離方法を適用する電子部品用部材としての半導体装置用部材１０についての斜視図である。It is a perspective view about the member 10 for semiconductor devices as a member for electronic components to which the peeling method of the substituted plating layer which the present inventors proposed is applied. 図２に示す半導体装置用部材１０を治具に装着した状態を説明する部分断面図である。It is a fragmentary sectional view explaining the state which mounted | wore the jig | tool 10 for semiconductor devices shown in FIG. 2 to the jig | tool. 図２に示す半導体装置用部材１０のリード線１８，１８に電解金めっきを施す工程を説明する説明図である。It is explanatory drawing explaining the process of performing the electrolytic gold plating to the lead wires 18 of the member 10 for semiconductor devices shown in FIG.

本発明者等が提案した置換めっき層の剥離方法では、電子部品用部材として、図２に示す半導体装置用部材１０を好適に用いることができる。この半導体装置用部材１０については、前述しているため省略する。
かかる半導体装置用部材１０では、その全表面に必要に応じて下地めっきとしてのニッケルめっきを施した後、リード線１８，１８のステム１２の両面側に突出する突出部の一方に、図３に示す様に、治具３０を装着する。
更に、図４に示す様に、半導体装置用部材１０及び治具３０を電解金めっき液２８に浸漬して電解金めっきを施す。この治具３０及び電解金めっきについても、前述しているため説明を省略する。
尚、電解金めっき液としては、従来から公知の電解金めっき液を使用でき、その電解条件も公知の条件を採用できる。 In the peeling method of the displacement plating layer proposed by the present inventors, the semiconductor device member 10 shown in FIG. 2 can be suitably used as the electronic component member. Since this semiconductor device member 10 has been described above, it will be omitted.
In such a semiconductor device member 10, the entire surface thereof is subjected to nickel plating as a base plating as required, and thereafter, one of the projecting portions projecting on both sides of the stem 12 of the lead wires 18, 18 is shown in FIG. As shown, the jig 30 is mounted.
Further, as shown in FIG. 4, the semiconductor device member 10 and the jig 30 are immersed in an electrolytic gold plating solution 28 to perform electrolytic gold plating. Since the jig 30 and electrolytic gold plating are also described above, the description thereof is omitted.
In addition, as an electrolytic gold plating solution, a conventionally known electrolytic gold plating solution can be used, and a known condition can be adopted as the electrolytic condition.

次いで、リード線１８，１８の露出面に電解金めっきを施した半導体装置用部材１０を、図１に示す様に、治具３０に装着した状態で、電解質が添加された金めっきの剥離液４０に浸漬する。
この剥離液４０としては、金めっきを剥離し得る剥離液であればよく、シアン化カリウム等の錯化剤とｐ−ニトロ安息香酸等の酸化剤とが配合されている剥離液を好適に用いることができる。かかる剥離液４０に添加される電解質としては、水酸化カリウムを好適に用いることができる。 Next, as shown in FIG. 1, the gold plating stripping solution to which the electrolyte is added while the semiconductor device member 10 in which the exposed surfaces of the lead wires 18 and 18 are subjected to electrolytic gold plating is mounted on a jig 30 as shown in FIG. 1. Immerse into 40.
The stripping solution 40 may be any stripping solution capable of stripping gold plating, and a stripping solution containing a complexing agent such as potassium cyanide and an oxidizing agent such as p-nitrobenzoic acid is preferably used. it can. As the electrolyte added to the stripping solution 40, potassium hydroxide can be suitably used.

剥離液４０に浸漬された半導体装置用部材１０を装着した治具３０の電極２４を、図１に示す様に、電解めっきの際と同様に、陰極となるように直流電源４４と結線し、且つ剥離液４０に浸漬されている電極４２が陽極となるように直流電源４４と結線して、直流電源４４から電極２４と電極４２との間に直流電流を印加する。かかる電解剥離によって、リード線１８，１８の露出面に形成された電解金めっき層を剥離することなく、半導体装置用部材１０のステム１２やヒートシンク２０の表面に、図４に示す電解金めっきの際に形成された置換金めっき層のみを剥離できる。   As shown in FIG. 1, the electrode 24 of the jig 30 equipped with the semiconductor device member 10 immersed in the stripping solution 40 is connected to a DC power supply 44 so as to be a cathode, as in the case of electrolytic plating. The DC power source 44 is connected so that the electrode 42 immersed in the stripping solution 40 becomes an anode, and a DC current is applied from the DC power source 44 to the electrode 24 and the electrode 42. The electrolytic gold plating shown in FIG. 4 is performed on the surfaces of the stem 12 and the heat sink 20 of the semiconductor device member 10 without peeling the electrolytic gold plating layer formed on the exposed surfaces of the lead wires 18 and 18 by such electrolytic peeling. Only the displacement gold plating layer formed at the time can be peeled off.

ここで、実施例として、図４に示す様に、電解金めっき液に浸漬した半導体装置用部材１０のリード線１８，１８のみに直流電源３４から治具３０の電極２４（陰極）を経由して直流電流を印加して０．２〜０．１５μｍ（平均０．１７μｍ）の電解金めっき層を形成した。
次いで、リード線１８，１８に電解金めっき層を形成した半導体装置用部材１０を治具３０に装着した状態で図１に示す剥離液４０に浸漬した。この剥離液４０には、水酸化カリウム（８０ｇ／Ｌ）、シアン化カリウム（２０ｇ／Ｌ）及びｐ−ニトロ安息香酸（１５ｇ／Ｌ）が添加されている。
かかる剥離液４０に浸漬されている半導体装置用部材１０のリード線１８，１８には、直流電源４４から治具３０の電極２４（陰極）を経由して直流電流を印加して、半導体装置用部材１０のステム１２やヒートシンク２０の表面に形成された置換金めっき層の剥離を行った。かかる置換金めっき層の剥離処理後の金めっき層の厚さも、０．２〜０．１５μｍ（平均０．１７μｍ）であった。
このため、図１に示す置換金めっきの剥離処理によれば、リード線１８，１８に最終的に要求される厚さの金めっき層を形成しておくことで足りる。 Here, as an example, as shown in FIG. 4, only the lead wires 18 of the semiconductor device member 10 immersed in the electrolytic gold plating solution are passed from the DC power source 34 to the electrode 24 (cathode) of the jig 30. Then, a direct current was applied to form an electrolytic gold plating layer of 0.2 to 0.15 μm (average 0.17 μm).
Next, the semiconductor device member 10 in which the electrolytic gold plating layer was formed on the lead wires 18 and 18 was immersed in the stripping solution 40 shown in FIG. To this stripping solution 40, potassium hydroxide (80 g / L), potassium cyanide (20 g / L) and p-nitrobenzoic acid (15 g / L) are added.
A direct current is applied to the lead wires 18 and 18 of the semiconductor device member 10 immersed in the stripping solution 40 from the direct current power source 44 via the electrode 24 (cathode) of the jig 30, so as to be used for the semiconductor device. The displacement gold plating layer formed on the surface of the stem 12 of the member 10 or the heat sink 20 was peeled off. The thickness of the gold plating layer after the peeling treatment of the displacement gold plating layer was also 0.2 to 0.15 μm (average 0.17 μm).
For this reason, it is sufficient to form a gold plating layer having a thickness finally required on the lead wires 18 and 18 according to the displacement gold plating peeling process shown in FIG.

一方、比較例として、電解金めっきによって、半導体装置用部材１０のリード線１８，１８に０．２９〜０．２５μｍ（平均０．２７μｍ）の電解金めっき層を形成した後、治具３０から取り外した半導体装置用部材１０を、シアン化カリウム（２０ｇ／Ｌ）及びｐ−ニトロ安息香酸（１５ｇ／Ｌ）が添加された剥離液４０に浸漬して、半導体装置用部材１０のステム１２やヒートシンク２０の表面に形成された置換金めっき層の剥離を行った。かかる置換金めっき層の剥離処理後の金めっき層の厚さは、０．１９〜０．１５μｍ（平均０．１７μｍ）に低下していた。
この様に、比較例では、置換金めっき層の剥離処理を施す半導体装置用部材１０のリード線１８，１８には、置換金めっき層の剥離処理で剥離される厚さを予定して電解金めっき層を厚付けすることが必要である。 On the other hand, as a comparative example, an electrolytic gold plating layer of 0.29 to 0.25 μm (average 0.27 μm) is formed on the lead wires 18 and 18 of the semiconductor device member 10 by electrolytic gold plating. The removed semiconductor device member 10 is immersed in a stripping solution 40 to which potassium cyanide (20 g / L) and p-nitrobenzoic acid (15 g / L) are added, so that the stem 12 and the heat sink 20 of the semiconductor device member 10 are formed. The displacement gold plating layer formed on the surface was peeled off. The thickness of the gold plating layer after the peeling treatment of the displacement gold plating layer was reduced to 0.19 to 0.15 μm (average 0.17 μm).
As described above, in the comparative example, the lead wires 18 and 18 of the semiconductor device member 10 to which the displacement gold plating layer is peeled are subjected to electrolytic gold in accordance with the thickness to be peeled by the displacement gold plating layer peeling treatment. It is necessary to thicken the plating layer.

図１に示す置換金めっきの剥離処理では、電解金めっき層を剥離することなく置換金めっき層を選択的に除去できる理由は、次のように考えられる。
電解金めっきをリード線１８，１８のみに施した半導体装置用部材１０を、電解質が添加された金めっきの剥離液４０に浸漬して、リード線１８，１８を電解金めっきと同様に陰極として直流電流を給電する。このため、リード線１８，１８に形成された電解金めっき層の金の溶出を防止できる。
一方、電解金めっきの際に、給電されなかった非通電状態の半導体装置用部材１０のステム１２やヒートシンク２０には、剥離液中でも給電されない非通電状態である。このため、ステム１２やヒートシンク２０の表面には、剥離液４０の剥離作用が作用し、ステム１２やヒートシンク２０の表面に形成された置換金めっき層の金が溶出する。 The reason why the displacement gold plating layer can be selectively removed without peeling off the electrolytic gold plating layer in the displacement gold plating peeling process shown in FIG. 1 is considered as follows.
The member 10 for a semiconductor device in which only the lead wires 18 and 18 are subjected to electrolytic gold plating is immersed in a gold plating stripping solution 40 to which an electrolyte is added, and the lead wires 18 and 18 are used as cathodes similarly to the electrolytic gold plating. Supply direct current. For this reason, elution of gold in the electrolytic gold plating layer formed on the lead wires 18 can be prevented.
On the other hand, during electrolytic gold plating, the stem 12 and the heat sink 20 of the non-energized semiconductor device member 10 that is not supplied with power are in a non-energized state where no power is supplied even in the stripping solution. For this reason, the peeling action of the stripping solution 40 acts on the surfaces of the stem 12 and the heat sink 20, and gold of the displacement gold plating layer formed on the surfaces of the stem 12 and the heat sink 20 is eluted.

以上、半導体装置用部材１０のリード線１８，１８に電解金めっきを施した際に、非通電状態のステム１２やヒートシンク２０の表面に形成される、置換金めっき層の剥離について説明しているが、電解金めっきに代えて、電解銅めっきや電解ニッケルめっきについても同様に、その置換銅めっき層、置換銀めっき層、置換ニッケルめっき層を剥離する際にも適用できる。   Described above is the peeling of the replacement gold plating layer formed on the surfaces of the stem 12 and the heat sink 20 in the non-energized state when the lead wires 18 of the semiconductor device member 10 are subjected to electrolytic gold plating. However, in place of electrolytic gold plating, electrolytic copper plating and electrolytic nickel plating can be similarly applied when the replacement copper plating layer, replacement silver plating layer, and replacement nickel plating layer are peeled off.

１０ 半導体装置用部材（電子部品用部材）
１２ ステム
１４ 貫通孔
１６ 低融点ガラス層
１８ リード線
２０ ヒートシンク
２２ 絶縁基板
２４，４２ 電極（陰極）
２６ 棒状部材
２８ 電解金めっき液
３０ 治具
３２，４２ 電極（陽極）
３４，４４ 直流電源
４０ 剥離液 10 Semiconductor device components (electronic component components)
12 Stem 14 Through-hole 16 Low melting point glass layer 18 Lead wire 20 Heat sink 22 Insulating substrate 24, 42 Electrode (cathode)
26 Rod-shaped member 28 Electrolytic gold plating solution 30 Jig 32, 42 Electrode (anode)
34,44 DC power supply 40 Stripping solution

Claims (4)

本体部材の表面を形成する金属と電気的に絶縁されて金属部材が装着された電子部品用部材に、前記金属部材のみに給電する電解めっきによって、前記金属部材の露出面に電解めっき層を形成した後、
前記電解めっきの際に、非通電状態の金属表面に析出した置換めっき層を除去すべく、前記電子部品用部材を、前記電解めっき層を形成するめっき金属を剥離する剥離性能を有し、且つ電解質が添加された剥離液に浸漬して、前記金属部材に給電しつつ、前記置換めっき層を前記剥離液によって選択的に剥離することを特徴とする置換めっき層の剥離方法。 An electrolytic plating layer is formed on the exposed surface of the metal member by electrolytic plating that feeds power only to the metal member on an electronic component member that is electrically insulated from the metal forming the surface of the main body member and mounted with the metal member. After
In the electrolytic plating, in order to remove the displacement plating layer deposited on the non-energized metal surface, the electronic component member has a peeling performance for peeling the plating metal forming the electrolytic plating layer, and A displacement plating layer peeling method, wherein the displacement plating layer is selectively peeled by the peeling solution while being immersed in a peeling solution to which an electrolyte is added and supplying power to the metal member. 電子部品用部材として、本体部材としての金属製のステムに形成された貫通孔内に充填された絶縁層によって、前記ステムと電気的に絶縁されて金属部材としてのリード線が挿通されている電子部品用部材を用いる請求項１記載の置換めっき層の剥離方法。   An electronic component that is electrically insulated from the stem by an insulating layer filled in a through hole formed in a metal stem as a main body member, and a lead wire as a metal member is inserted as an electronic component member The peeling method of the displacement plating layer of Claim 1 using a member for components. 電解めっきを施した電子部品用部材の本体部材から突出する金属部材の突出端を治具に挿入して、前記治具内に設けられた電極に前記突出端の少なくとも一部が接触した状態で、前記電子部品用部材及び治具を剥離液に浸漬し、前記剥離用治具の電極に給電する請求項１又は請求項２記載の置換めっき層の剥離方法。   With the protruding end of the metal member protruding from the main body member of the electronic component member subjected to electrolytic plating inserted in the jig, with at least a part of the protruding end in contact with the electrode provided in the jig 3. The displacement plating layer peeling method according to claim 1, wherein the electronic component member and the jig are immersed in a peeling solution and power is supplied to an electrode of the peeling jig. 電解めっきとして、電解金めっきを採用し、剥離液として金めっき用の剥離液を用いる請求項１〜３のいずれか一項記載の置換めっき層の剥離方法。   The displacement plating layer peeling method according to any one of claims 1 to 3, wherein electrolytic gold plating is adopted as the electrolytic plating, and a peeling solution for gold plating is used as the peeling solution.
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