FR2976290B1 - Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques - Google Patents

Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques

Info

Publication number
FR2976290B1
FR2976290B1 FR1101779A FR1101779A FR2976290B1 FR 2976290 B1 FR2976290 B1 FR 2976290B1 FR 1101779 A FR1101779 A FR 1101779A FR 1101779 A FR1101779 A FR 1101779A FR 2976290 B1 FR2976290 B1 FR 2976290B1
Authority
FR
France
Prior art keywords
lithographic
dissolution
photo
resins
solutions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1101779A
Other languages
English (en)
Other versions
FR2976290A1 (fr
Inventor
Jerome Daviot
Philippe Vernin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR1101779A priority Critical patent/FR2976290B1/fr
Priority to PCT/EP2012/061037 priority patent/WO2012168485A1/fr
Priority to US14/119,337 priority patent/US20140076356A1/en
Priority to EP12730429.3A priority patent/EP2718767B1/fr
Publication of FR2976290A1 publication Critical patent/FR2976290A1/fr
Application granted granted Critical
Publication of FR2976290B1 publication Critical patent/FR2976290B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
    • C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
FR1101779A 2011-06-09 2011-06-09 Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques Active FR2976290B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1101779A FR2976290B1 (fr) 2011-06-09 2011-06-09 Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
PCT/EP2012/061037 WO2012168485A1 (fr) 2011-06-09 2012-06-11 Composition de solutions et conditions d'utilisation permettant l'élimination et la dissolution complète de résines photosensibles
US14/119,337 US20140076356A1 (en) 2011-06-09 2012-06-11 Composition of solutions and conditions for use enabling the stripping and complete dissolution of photoresists
EP12730429.3A EP2718767B1 (fr) 2011-06-09 2012-06-11 Composition de solutions et conditions d'utilisation permettant l'élimination et la dissolution complète de résines photosensibles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1101779A FR2976290B1 (fr) 2011-06-09 2011-06-09 Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques

Publications (2)

Publication Number Publication Date
FR2976290A1 FR2976290A1 (fr) 2012-12-14
FR2976290B1 true FR2976290B1 (fr) 2014-08-15

Family

ID=46397179

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1101779A Active FR2976290B1 (fr) 2011-06-09 2011-06-09 Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques

Country Status (4)

Country Link
US (1) US20140076356A1 (fr)
EP (1) EP2718767B1 (fr)
FR (1) FR2976290B1 (fr)
WO (1) WO2012168485A1 (fr)

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CN103543620B (zh) * 2013-11-11 2016-07-06 深圳市星扬化工有限公司 一种印制电路板显影膜去除液
CN107406715B (zh) * 2015-03-06 2020-06-09 H.B.富乐公司 溶剂型底漆组合物
KR102327568B1 (ko) * 2015-03-12 2021-11-17 리지필드 액퀴지션 낮은 pKa 구동의 폴리머 스트리핑 동안에 전하 착화 구리 보호를 촉진하는 조성물 및 방법
JP7057653B2 (ja) * 2017-12-08 2022-04-20 花王株式会社 樹脂マスク剥離用洗浄剤組成物
KR102448220B1 (ko) * 2018-01-25 2022-09-27 메르크 파텐트 게엠베하 포토레지스트 제거제 조성물
US20190233777A1 (en) * 2018-01-30 2019-08-01 Dow Global Technologies Llc Microemulsion removers for advanced photolithography
JP7389886B2 (ja) * 2019-07-11 2023-11-30 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジストリムーバ組成物
EP3872569A1 (fr) * 2020-02-26 2021-09-01 Spring Coating Systems SAS Solution de révélateur pour founir des plaques d'impression flexographiques et procédé pour fabriquer des plaques d'impression flexographique utilisant celle-ci
CN117872693A (zh) * 2024-03-13 2024-04-12 深圳市松柏科工股份有限公司 正胶剥离液、正胶剥离液的制备方法及其应用

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US4744834A (en) 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US4992108A (en) 1990-01-18 1991-02-12 Ward Irl E Photoresist stripping compositions
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5507978A (en) 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
US5909744A (en) 1996-01-30 1999-06-08 Silicon Valley Chemlabs, Inc. Dibasic ester stripping composition
US5728664A (en) 1996-04-15 1998-03-17 Ashland, Inc. Photoresist stripping compositions
JPH10239865A (ja) 1997-02-24 1998-09-11 Jsr Corp ネガ型フォトレジスト用剥離液組成物
JP3773227B2 (ja) 1997-10-16 2006-05-10 東京応化工業株式会社 レジスト用剥離液組成物およびこれを用いたレジスト剥離方法
KR100268108B1 (ko) 1998-08-25 2000-12-01 윤종용 포토레지스트용 스트리퍼 조성물
US6310020B1 (en) * 1998-11-13 2001-10-30 Kao Corporation Stripping composition for resist
US6475292B1 (en) 2000-07-31 2002-11-05 Shipley Company, L.L.C. Photoresist stripping method
US6551973B1 (en) 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
JP3516446B2 (ja) 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
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JP4202859B2 (ja) * 2003-08-05 2008-12-24 花王株式会社 レジスト用剥離剤組成物
JP4678673B2 (ja) 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
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CN101750911A (zh) * 2008-11-28 2010-06-23 安集微电子（上海）有限公司 一种光刻胶清洗剂组合物
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
WO2010118916A1 (fr) * 2009-04-16 2010-10-21 Basf Se Composition organique de décapant de résine photosensible

Also Published As

Publication number Publication date
US20140076356A1 (en) 2014-03-20
EP2718767A1 (fr) 2014-04-16
FR2976290A1 (fr) 2012-12-14
WO2012168485A1 (fr) 2012-12-13
EP2718767B1 (fr) 2019-08-07

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