JP4202859B2 - レジスト用剥離剤組成物 - Google Patents
レジスト用剥離剤組成物 Download PDFInfo
- Publication number
- JP4202859B2 JP4202859B2 JP2003286871A JP2003286871A JP4202859B2 JP 4202859 B2 JP4202859 B2 JP 4202859B2 JP 2003286871 A JP2003286871 A JP 2003286871A JP 2003286871 A JP2003286871 A JP 2003286871A JP 4202859 B2 JP4202859 B2 JP 4202859B2
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- Japan
- Prior art keywords
- resist
- gaas
- weight
- release agent
- resist stripping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- TXXWBTOATXBWDR-UHFFFAOYSA-N n,n,n',n'-tetramethylhexane-1,6-diamine Chemical compound CN(C)CCCCCCN(C)C TXXWBTOATXBWDR-UHFFFAOYSA-N 0.000 description 1
- MXHTZQSKTCCMFG-UHFFFAOYSA-N n,n-dibenzyl-1-phenylmethanamine Chemical compound C=1C=CC=CC=1CN(CC=1C=CC=CC=1)CC1=CC=CC=C1 MXHTZQSKTCCMFG-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- JLFNLZLINWHATN-UHFFFAOYSA-N pentaethylene glycol Chemical compound OCCOCCOCCOCCOCCO JLFNLZLINWHATN-UHFFFAOYSA-N 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- MUPFEKGTMRGPLJ-ZQSKZDJDSA-N raffinose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO[C@@H]2[C@@H]([C@@H](O)[C@@H](O)[C@@H](CO)O2)O)O1 MUPFEKGTMRGPLJ-ZQSKZDJDSA-N 0.000 description 1
- HEBKCHPVOIAQTA-ZXFHETKHSA-N ribitol Chemical compound OC[C@H](O)[C@H](O)[C@H](O)CO HEBKCHPVOIAQTA-ZXFHETKHSA-N 0.000 description 1
- CDAISMWEOUEBRE-UHFFFAOYSA-N scyllo-inosotol Natural products OC1C(O)C(O)C(O)C(O)C1O CDAISMWEOUEBRE-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000036556 skin irritation Effects 0.000 description 1
- 231100000475 skin irritation Toxicity 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- UQZIYBXSHAGNOE-XNSRJBNMSA-N stachyose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO[C@@H]2[C@@H]([C@@H](O)[C@@H](O)[C@@H](CO[C@@H]3[C@@H]([C@@H](O)[C@@H](O)[C@@H](CO)O3)O)O2)O)O1 UQZIYBXSHAGNOE-XNSRJBNMSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000004044 tetrasaccharides Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 150000004043 trisaccharides Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
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Description
〔1〕(A)アミン、(B)ハンセンの溶解パラメータが18〜33MPa1/2である有機溶剤、(C)糖類、及び0〜5重量%の(D)水を含有するレジスト用剥離剤組成物、
〔2〕前記〔1〕記載のレジスト用剥離剤組成物を使用してレジストを剥離するレジスト剥離方法、並びに
〔3〕レジスト剥離工程を有する半導体素子の製造方法であって、該レジスト剥離工程で前記〔1〕記載のレジスト用剥離剤組成物を使用してレジストを剥離する半導体素子の製造方法
に関する。
該アミンとしては、脂肪族アミン、芳香族アミン及び環式アミンが挙げられ、分子中に窒素原子を1〜4個有するものが好ましい。その例としては、一分子中に炭素数が1〜20のモノアルキルアミン、同炭素数が2〜22のジアルキルアミン及び同炭素数が3〜24のトリアルキルアミン等の窒素原子を1個有する脂肪族アミン、さらにはベンジルアミン、ジベンジルアミン、トリベンジルアミン、1−アミノナフタレン、アルキルベンジルアミン等の窒素原子を1個有する芳香族アミン;エチレンジアミン、トリエチレンジアミン、1,3―ジアミノプロパン、1,6−ジアミノヘキサン、1,3−ジアミノキシレン、1,3―ビスアミノシクロヘキサン、テトラメチルヘキサメチレンジアミン等の窒素原子を2個有する脂肪族アミン;ジエチレントリアミン等の窒素原子を3個有する脂肪族アミン;トリエチレンテトラミン等の窒素原子を4個有する脂肪族アミン;分子中に窒素原子を1〜4個有する上記アミン化合物に炭素数2〜4のアルキレンオキサイドを付加した化合物:モノエタノールアミン、モノプロパノールアミン、モノイソプロパノールアミン、ジエタノールアミン、メチルモノエタノールアミン、ブチルモノエタノールアミン、トリエタノールアミン、ジメチルモノエタノールアミン、メチルジエタノールアミン、2−アミノ−1−プロパノール、1−アミノ−2−プロパノール等のアルカノールアミン;2−メトキシエチルアミン、2−エトキシエチルアミン、3−メトキシプロピルアミン、3−エトキシプロピルアミン等のアルコキシアルキルアミン;2−(2−アミノエトキシ)エタノール、2−(2−アミノエトキシ)プロパノール等のアルコキシアルカノールアミンが挙げられる。これらの中では、優れたレジスト剥離性を得る観点から、アルカノールアミンがより好ましく、中でもモノエタノールアミンとメチルモノエタノールアミンが特に好ましい。また、毒性や皮膚刺激性を考慮すればメチルモノエタノールアミンが最適である。
R1 [(X)(AO)sR2 ]t (I)
(式中、R1 は水素原子又は炭素数1〜8の炭化水素基、好ましくは水素原子又は炭素数1〜6の炭化水素基、R2 は水素原子又は炭素数1 〜8の炭化水素基、好ましくは水素原子又は炭素数1〜4の炭化水素基、より好ましくは水素原子又は炭素数1又は2の炭化水素基である。Xは−O−基、−C(O)O−基、−NH−基、又は−N((AO)uH)−基であり、AOは炭素数2又は3のアルキレンオキサイドを表わす。また、sは1〜20の整数であり、tは1〜8の整数、好ましくは1〜3、より好ましくは1又は2である。uは1〜3の整数である)
本発明で用いられる(C)糖類としては、D―キシロース、D―グルコース、L−イドース、D−フルクトース等の単糖類、スクロース等の二糖類、ラフィノース等の三糖類、スタキオース等の四糖類等の糖、及びエリトリトール、キシリトール、ズルシトール、リビトール、D−ソルビトール、D−マンニトール、L−イジトール等の直鎖糖アルコール、シクリトール、myo―イノシトール、クエルシトール等の環式糖アルコールの糖アルコールが挙げられる。
1.剥離前試料調製
(1)ポジレジスト:GaAs上に350μmおきにストライプ状に高さ90nm、幅10μmの絶縁膜Si3N4 を形成後、全面にレジストを乾燥膜厚3μmになるように塗布し、130℃、5分でポストベークした。その後、反応性イオンエッチングガスのCF4 ガスで処理し、剥離前試料を調製した。レジストとしては下記のものを用いた。
ポジ型レジスト:「AZ-4620 」(商品名、クラリアント製)、ノボラック樹脂
ネガ型レジスト:「TLOR-iNO4MG 」(商品名、東京応化工業製)、ポリヒドロキシスチレン樹脂
下記の表1に示す剥離方法及び条件でレジストの剥離及びリンス処理を行い、この過程でポジ及びネガレジスト剥離性、GaAsの腐食防止性(エッチング量)、及びFET特性を以下のようにして評価した。用いた剥離剤組成物の組成と評価結果を表2にまとめた。
剥離条件は30℃、1分の浸漬洗浄を基本とし、1分で剥離できなかったものについては5分浸漬洗浄した。リンス、乾燥後、電界放射型走査電子顕微鏡で5千倍と5万倍に拡大して観察し、絶縁膜Si3N4 上と化合物半導体GaAs上のレジスト残渣の有無から、レジスト剥離性を評価した。
<評価判定>
◎:30℃、1分でレジスト残渣なし
○:30℃、5分でレジスト残渣なし
×:レジスト残渣あり
剥離条件は70℃、30分で浸漬洗浄した。リンス、乾燥後、ポジレジストの場合と同様に試料表面を観察し、レジスト剥離性を評価した。
<評価判定>
◎:レジスト残渣なし(レジストが溶解する)
○:レジスト残渣なし(剥離剤組成物中にレジストが浮遊する)
×:レジスト残渣あり
図1に示すようにGaAs1上に350μmおきにストライプ状に高さ90nm、幅10μmの絶縁膜(Si3N4 )2を形成し、これを用いて下記(1)〜(4)の手順でGaAsのエッチング量を求めた。なお、図1は絶縁膜付近を拡大した図である。
(1)初期の段差1(絶縁膜の厚み、図1中では3)を原子間力顕微鏡(日本ビーコ(株)製「Auto Probe M5 」)で測定した。
(2)剥離剤組成物に70℃、13時間浸漬した。
(3)段差2(絶縁膜の厚みとGaAs1のエッチングされた部分の厚みの合計、図1中では4)を測定した。
(4)エッチング量を計算した。エッチング量=(段差2)−(段差1)
段差の測定精度を上げるため、浸漬時間を13時間と意図的に長くして評価した。GaAsのエッチング量は上記条件で20nm以内が実用上の許容範囲である。
GaAsFET :図2に示すように、半絶縁性GaAs基板5上に3μmの厚みの高抵抗バッファー層6と0.2 μmの厚みのn−GaAsの活性層7を結晶成長させ、ソース8、ドレイン9のオーミック電極(AuGe/Ni )及びリセス(凹み)10を形成した。この時、オーミック間に電圧2Vを加え、剥離剤浸漬前後で電流値(IDS)が変わらない事が剥離剤組成物として望ましい性能である。浸漬条件は、70℃で、実際の剥離条件より少し長めの2時間とした。剥離剤浸漬前後で電流値が変化していれば、n−GaAsのエッチングが原因で、電流の通る活性層幅が小さくなり抵抗が大きくなる為、電流が小さくなると推定される。下式により剥離剤浸漬前後での電流値の変化量(ΔIDS)を求めた。
ΔIDS(mA)=浸漬前のIDS−浸漬後のIDS
=20−浸漬後のIDS
したがって、IDSは0mAである事が望ましく、0mAより大きい変化量では剥離剤組成物としての実用性に乏しい。
2 絶縁膜(Si3N4)
3 段差1
4 段差2
5 半絶縁性GaAs基板
6 高抵抗バッファー層
7 活性層
8 ソース
9 ドレイン
10 リセス(凹み)
Claims (6)
- (A)アミン0.1〜3重量%、(B)ハンセンの溶解パラメータが18〜33MPa1/2である有機溶剤91〜99重量%、(C)糖類0.01〜3重量%、及び(D)水0〜5重量%を含有する、GaAsを含む半導体素子製造工程時のレジスト用剥離剤組成物。
- アミンがアルカノールアミンである請求項1記載のレジスト用剥離剤組成物。
- 有機溶剤がエーテル類、アルコール類、カルボニル類、フェノール類、含窒素化合物、及び含硫黄化合物からなる群より選ばれる少なくとも1種である請求項1又は2記載のレジスト用剥離剤組成物。
- 糖類が分子量70〜350の糖類である請求項1〜3いずれか記載のレジスト用剥離剤組成物。
- 請求項1〜4いずれか記載のレジスト用剥離剤組成物を使用してレジストを剥離するGaAsを含む半導体素子製造工程時のレジスト剥離方法。
- レジスト剥離工程を有するGaAsを含む半導体素子の製造方法であって、該レジスト剥離工程で請求項1〜4いずれか記載のレジスト用剥離剤組成物を使用してレジストを剥離するGaAsを含む半導体素子の製造方法。
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JP2003286871A JP4202859B2 (ja) | 2003-08-05 | 2003-08-05 | レジスト用剥離剤組成物 |
US10/910,338 US7879784B2 (en) | 2003-08-05 | 2004-08-04 | Stripping agent composition for a resist |
TW093123494A TWI350430B (en) | 2003-08-05 | 2004-08-05 | Stripping agent composition for a resist |
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JP2003286871A JP4202859B2 (ja) | 2003-08-05 | 2003-08-05 | レジスト用剥離剤組成物 |
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Cited By (1)
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KR101893252B1 (ko) | 2016-05-03 | 2018-08-29 | 연세대학교 산학협력단 | 포토 레지스트의 제거방법 |
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JP4628209B2 (ja) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | 剥離剤組成物 |
KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
WO2007021085A1 (en) * | 2005-08-13 | 2007-02-22 | Techno Semichem Co., Ltd. | Photoresist stripper composition for semiconductor manufacturing |
TW200736855A (en) * | 2006-03-22 | 2007-10-01 | Quanta Display Inc | Method of fabricating photoresist thinner |
US20080096785A1 (en) * | 2006-10-19 | 2008-04-24 | Air Products And Chemicals, Inc. | Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue |
FR2912151B1 (fr) * | 2007-02-05 | 2009-05-08 | Arkema France | Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange |
EP2254981A4 (en) * | 2008-02-20 | 2012-10-03 | Diversey Inc | CLEANING COMPOSITION WITH LOW CONTENT OF VOLATILE ORGANIC COMPOUNDS |
KR101374686B1 (ko) | 2008-09-22 | 2014-03-18 | 에스케이종합화학 주식회사 | 포토레지스트용 스트리퍼 조성물 |
KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
JP5659729B2 (ja) * | 2010-11-24 | 2015-01-28 | 三菱瓦斯化学株式会社 | フォトレジスト剥離剤組成物 |
EP2661471A4 (en) * | 2011-01-06 | 2014-06-11 | Diversey Inc | NON-CORROSIVE STRIPPING COMPOSITIONS AND METHODS FOR PREPARING AND USING SAME |
FR2976290B1 (fr) * | 2011-06-09 | 2014-08-15 | Jerome Daviot | Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques |
WO2014104192A1 (ja) * | 2012-12-27 | 2014-07-03 | 富士フイルム株式会社 | レジスト除去液およびレジスト剥離方法 |
KR102414295B1 (ko) * | 2016-01-22 | 2022-06-30 | 주식회사 이엔에프테크놀로지 | 포토레지스트 제거용 박리액 조성물 |
JP6860276B2 (ja) * | 2016-09-09 | 2021-04-14 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
JP6176584B1 (ja) * | 2016-09-30 | 2017-08-09 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
CN108535971B (zh) * | 2017-03-03 | 2023-09-12 | 易案爱富科技有限公司 | 光致抗蚀剂去除用剥离液组合物 |
JP7014380B2 (ja) * | 2018-03-28 | 2022-02-01 | 花王株式会社 | 洗浄剤組成物 |
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JPH09319098A (ja) | 1996-05-27 | 1997-12-12 | Rohm Co Ltd | レジスト膜用剥離液 |
JPH1184686A (ja) | 1997-09-01 | 1999-03-26 | Mitsubishi Gas Chem Co Inc | レジスト剥離剤組成物 |
US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
JP4224651B2 (ja) | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
JP2000284506A (ja) | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
JP4415228B2 (ja) | 2000-06-12 | 2010-02-17 | Dic株式会社 | レジスト剥離液用組成物 |
JP3953476B2 (ja) | 2003-06-26 | 2007-08-08 | ドングウー ファイン−ケム カンパニー、 リミテッド | フォトレジスト剥離液組成物及びそれを用いたフォトレジストの剥離方法 |
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Cited By (1)
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KR101893252B1 (ko) | 2016-05-03 | 2018-08-29 | 연세대학교 산학협력단 | 포토 레지스트의 제거방법 |
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US7879784B2 (en) | 2011-02-01 |
JP2005055701A (ja) | 2005-03-03 |
TWI350430B (en) | 2011-10-11 |
TW200517796A (en) | 2005-06-01 |
US20050032659A1 (en) | 2005-02-10 |
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