TWI417683B - 用於微電子基板之穩定化，非水性清潔組合物 - Google Patents
用於微電子基板之穩定化，非水性清潔組合物 Download PDFInfo
- Publication number
- TWI417683B TWI417683B TW096100064A TW96100064A TWI417683B TW I417683 B TWI417683 B TW I417683B TW 096100064 A TW096100064 A TW 096100064A TW 96100064 A TW96100064 A TW 96100064A TW I417683 B TWI417683 B TW I417683B
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- cleaning
- weight
- hydroxypyridine
- hydroxide
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 118
- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 238000004377 microelectronic Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims description 20
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 claims abstract description 43
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 125000001741 organic sulfur group Chemical group 0.000 claims abstract description 12
- 239000003381 stabilizer Substances 0.000 claims abstract description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 30
- 238000005260 corrosion Methods 0.000 claims description 26
- 230000007797 corrosion Effects 0.000 claims description 26
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 239000002585 base Substances 0.000 claims description 16
- 239000004094 surface-active agent Substances 0.000 claims description 14
- 239000002738 chelating agent Substances 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 6
- 239000006184 cosolvent Substances 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 5
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 5
- GCNTZFIIOFTKIY-UHFFFAOYSA-N 4-hydroxypyridine Chemical compound OC1=CC=NC=C1 GCNTZFIIOFTKIY-UHFFFAOYSA-N 0.000 claims description 4
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims description 4
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims description 4
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 150000008044 alkali metal hydroxides Chemical group 0.000 claims description 3
- 150000005622 tetraalkylammonium hydroxides Chemical group 0.000 claims description 3
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims description 2
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000007086 side reaction Methods 0.000 abstract description 2
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- -1 hydroxypyridine compound Chemical class 0.000 description 8
- 238000002791 soaking Methods 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- HQFQTTNMBUPQAY-UHFFFAOYSA-N cyclobutylhydrazine Chemical compound NNC1CCC1 HQFQTTNMBUPQAY-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 2
- GRFNBEZIAWKNCO-UHFFFAOYSA-N 3-pyridinol Chemical compound OC1=CC=CN=C1 GRFNBEZIAWKNCO-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 239000004606 Fillers/Extenders Substances 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 229910020658 PbSn Inorganic materials 0.000 description 2
- 101150071746 Pbsn gene Proteins 0.000 description 2
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 150000002429 hydrazines Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical class CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 1
- NGTQEBZGQDLEGD-UHFFFAOYSA-N 2-(4-chlorophenyl)-2-(1,2,4-triazol-1-yl)hexanenitrile Chemical compound C1=NC=NN1C(C#N)(CCCC)C1=CC=C(Cl)C=C1 NGTQEBZGQDLEGD-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- FCKYPQBAHLOOJQ-UWVGGRQHSA-N 2-[[(1s,2s)-2-[bis(carboxymethyl)amino]cyclohexyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)[C@H]1CCCC[C@@H]1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UWVGGRQHSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- ZLRANBHTTCVNCE-UHFFFAOYSA-N 2-phenyl-3-(trifluoromethyl)pyridine Chemical compound FC(F)(F)C1=CC=CN=C1C1=CC=CC=C1 ZLRANBHTTCVNCE-UHFFFAOYSA-N 0.000 description 1
- RPQFOXCKLIALTB-UHFFFAOYSA-M 3-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)CC[N+](C)(C)C RPQFOXCKLIALTB-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- YZHQBWDNOANICQ-UHFFFAOYSA-M 4-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCCO YZHQBWDNOANICQ-UHFFFAOYSA-M 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- KSGUUTWSWMLVHG-UHFFFAOYSA-N N.OOO Chemical compound N.OOO KSGUUTWSWMLVHG-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KFJNCGCKGILQMF-UHFFFAOYSA-M dibutyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(C)CCCC KFJNCGCKGILQMF-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229960004337 hydroquinone Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000004806 hydroxypyridines Chemical class 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229940075579 propyl gallate Drugs 0.000 description 1
- 235000010388 propyl gallate Nutrition 0.000 description 1
- 239000000473 propyl gallate Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 125000005402 stannate group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- UMHFSEWKWORSLP-UHFFFAOYSA-N thiophene 1,1-dioxide Chemical compound O=S1(=O)C=CC=C1 UMHFSEWKWORSLP-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- HPWUYZIJILJHNG-UHFFFAOYSA-M tributyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCO)(CCCC)CCCC HPWUYZIJILJHNG-UHFFFAOYSA-M 0.000 description 1
- FYFNFZLMMGXBMT-UHFFFAOYSA-M tributyl(ethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CC)(CCCC)CCCC FYFNFZLMMGXBMT-UHFFFAOYSA-M 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
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Description
本發明係關於用於微電子基板的穩定化清潔及剝離組合物，尤其用於自圖案化微電子基板清除塊狀光阻劑、未灰化之聚合殘餘物及經灰化之殘餘物，且結果僅有低金屬腐蝕或大體上無金屬腐蝕。本發明在未產生不當之鋁或銅腐蝕的情況下在自鋁基及銅基微電子裝置組件清潔聚合物方面尤其有效，而且在自其他微電子應用移除聚合物並同時保護金屬及基板免受腐蝕方面亦有效。在本發明可有效清潔及保護之方法包括用於硬碟製造(用Fe、Co、Ni及Cr金屬之合金)、晶圓凸塊製程(諸如PbSn、InSn及其他無Pb焊料)、線路處理之高級前端(SiGe、各種金屬閘極)及化合物半導體中所使用者。本發明進一步係關於亦能夠自其他通道及自金屬導線清潔灰化後殘餘物以及自微電子基板清潔或剝離未灰化之光阻劑的該等清潔組合物。本發明之另一態樣為一種自微電子組件(尤其含鋁之微電子組件)清潔或剝離光阻劑及殘餘物，而不對見於眾多微電子方法中之金屬產生不當之金屬腐蝕的方法。
已建議許多光阻劑剝離劑及殘餘物移除劑用於微電子製造中。微電子裝置構造之許多階段包括沈積於基板材料上且經成像以產生電路設計之光阻劑薄膜。所得影像用於使用電漿蝕刻氣體或溶劑基化學蝕刻使下層材料(其可為介電層或金屬層)圖案化。在此蝕刻步驟後，須自基板之受保護區域移除抗蝕劑掩模以使下一處理操作得以進行。光阻劑可由濕式化學剝離劑直接移除，或藉由灰化塊狀材料、接著移除殘餘物來大量移除。為了發現用於移除塊狀抗蝕劑及經灰化之殘餘物的清潔組合物，實仍深具挑戰性之事。蝕刻方法可改變塊狀聚合物、增加交聯且使抗蝕劑難以移除。當灰化步驟為部分或不完全時，可能面臨類似交聯，且在特徵側壁上之經灰化之殘餘物經證實難以移除。另外，清潔溶液須能提供足夠清潔，並同時保護所有暴露之金屬及介電質免受腐蝕或蝕刻。此在需要同時能與眾多材料相容(其每一者皆有獨特相容性需求)之微電子顯影的領域中尤其受關注。
已有人建議許多鹼性微電子剝離或清潔組合物，用於自微電子基板移除交聯及硬化之光阻劑及其他殘餘物(諸如蝕刻後殘餘物)。然而，用該等剝離及清潔組合物之一問題在於使用該等清潔組合物可能產生金屬腐蝕。該腐蝕產生金屬導線之鬚晶、坑洞、凹口，及合金中金屬之選擇性損耗(至少部分由於裝置基板中之金屬與所使用之鹼性剝離劑反應所引起)。該鹼性微電子剝離及清潔組合物之一為美國專利第5,308,745號中所揭示之組合物。儘管該專利之剝離及清潔組合物在商業上已用於自基板剝離硬化及交聯之光阻劑，但已發現試圖用該專利之清潔組合物來清潔具有各種暴露之金屬層的微電子基板時會產生顯著金屬腐蝕或不足以清潔抗蝕劑或殘餘物。
因此，需要可有效移除塊狀殘餘物抗蝕劑及經灰化之殘餘物且無任何由剝離及清潔組合物所產生之顯著金屬腐蝕或基板侵蝕的微電子剝離及清潔組合物。亦需要對暴露於相同清潔步驟中之清潔化學處理之微電子製造中所存在之眾多材料提供腐蝕保護之組合物。
根據本發明，提供用於清潔微電子裝置之非水性剝離及清潔組合物，該組合物包含：至少一種作為剝離溶劑之有機含硫極性化合物、至少一種強氫氧化物鹼之無水來源及至少一種抑制有害副反應之羥基吡啶穩定劑。其他可選組份，諸如共溶劑、界面活性劑或表面活性劑、金屬螯合劑或錯合劑及腐蝕抑制劑亦可存在於本發明之非水性剝離及清潔組合物中。
用於清潔微電子裝置之非水性剝離及清潔組合物將較佳地一般包含：作為用作剝離溶劑之有機含硫極性化合物的液態亞碸(諸如二甲亞碸(DMSO))、液態碸(諸如環丁碸)或其混合物，其量以組合物之重量計為約20重量%至約99重量%；作為強氫氧化物鹼之鹼金屬氫氧化物、氫氧化銨或氫氧化四級銨，其量以組合物之重量計為約0.5重量%至約20重量%；及2－羥基吡啶或4－羥基吡啶或其混合物，其量以組合物之重量計為約0.01重量%至約5重量%。
根據本發明之用於清潔微電子裝置之方法包含用於清潔微電子裝置而不產生任何實質金屬腐蝕的方法，該方法包含使微電子裝置與非水性清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含至少一種作為剝離溶劑之有機含硫極性化合物、至少一種強氫氧化物鹼之無水來源及至少一種羥基吡啶穩定劑，及視情況其他額外組份，諸如共溶劑、界面活性劑或表面活性劑、金屬錯合劑或螯合劑及腐蝕抑制劑。
本發明之用於清潔微電子裝置之非水性剝離及清潔組合物包含至少一種作為剝離溶劑之有機含硫極性化合物、至少一種強氫氧化物鹼之無水來源及至少一種作為穩定劑以抑制有害副反應的羥基吡啶。其他可選組份，諸如共溶劑、界面活性劑或表面活性劑、金屬錯合劑或螯合劑及腐蝕抑制劑亦可存在於本發明之非水性剝離及清潔組合物中。
任何合適之有機含硫剝離溶劑極性化合物可用於本發明之組合物中。該等合適之有機含硫極性化合物之實例包括(但不限於)：液態二烷基亞碸及液態碸及其類似物，尤其二甲亞碸及環丁碸。該等化合物包括(例如)：式R1
－S(O)(O)－R2
之碸，其中R1
及R2
為1至4個碳原子之烷基；式R1
－S(O)－R2
之液態亞碸，其中R1
及R2
為1至4個碳原子之烷基，諸如二甲亞碸(DMSO)；及環狀亞碸及碸化合物，諸如環丁碸(四氫噻吩－1,1－二氧化物)，及其類似物。以組合物之重量計，該等有機含硫極性化合物將以約20重量%至約99重量%、較佳約25重量%至約90重量%且更佳約50重量%至約90重量%之量存在於組合物中。
任何合適之非水性強氫氧化物鹼可用於本發明之組合物中。該等合適之非水性強氫氧化物鹼之實例包括(但不限於)：鹼金屬氫氧化物、氫氧化銨及氫氧化四級銨。金屬游離鹼為較佳且四級銨鹼，尤其氫氧化四烷基銨，諸如氫氧化四甲基銨及其類似物甚至更佳。該等鹼較佳為氫氧化四級銨，諸如氫氧化四烷基銨(包括在烷基或烷氧基中一般有1至4個碳原子之含羥基及烷氧基之烷基，但亦包括苄基)。該等鹼中之最佳者為氫氧化四甲基銨及氫氧化三甲基－2－羥基乙基銨(膽鹼)。其他可用之氫氧化四級銨之實例包括：氫氧化三甲基－3－羥基丙基銨、氫氧化三甲基－3－羥基丁基銨、氫氧化三甲基－4－羥基丁基銨、氫氧化三乙基－2－羥基乙基銨、氫氧化三丙基－2－羥基乙基銨、氫氧化三丁基－2－羥基乙基銨、氫氧化二甲基乙基－2－羥基乙基銨、氫氧化二甲基二－(2－羥基乙基)銨、氫氧化單甲基三乙醇銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四丁基銨、氫氧化四乙醇銨、氫氧化單甲基三乙基銨、氫氧化單甲基三丙基銨、氫氧化單甲基三丁基銨、氫氧化單乙基三甲基銨、氫氧化單乙基三丁基銨、氫氧化二甲基二乙基銨、氫氧化二甲基二丁基銨、氫氧化苄基三甲基銨及其類似鹼，及其混合物。用於組合物中之至少一種非水性強氫氧化物鹼之量一般為以組合物之重量計約0.5重量%至約20重量%、較佳約0.5重量%至約10重量且更佳約0.5重量%至約5重量%之量。
任何合適之羥基吡啶化合物可用作本發明之組合物中之穩定劑組份。作為該等合適之羥基吡啶之實例，可提及2－羥基吡啶、3－羥基吡啶及4－羥基吡啶。羥基吡啶較佳為2－羥基吡啶或4－羥基吡啶，更佳為2－羥基吡啶。本發明之組合物中之羥基吡啶組份的量一般為以組合物之重量計約0.01重量%至約5重量%、較佳約0.01重量%至約2重量%且更佳約0.01重量%至約0.5重量%之量。本發明之羥基吡啶組份以穩定劑形式存在且咸信其藉由阻斷強氫氧化物鹼與含硫有機溶劑組份反應來提供對組合物之穩定作用。在不存在羥基吡啶穩定劑之情況下，一般為約12之組合物之pH值將下降且組合物將變色且喪失其清潔效用。
術語"非水性"意謂在組合物中存在不大於約2%之水、較佳小於約1%之水且更佳為0.5%至基本上無水。
任何合適之有機共溶劑化合物可視情況包括於本發明之組合物中，其一般作為非水性強氫氧化物鹼之載劑或改良組合物之總體溶劑特性。此等共溶劑包括(但不限於)：脂族醇及多元醇及其醚，諸如甲醇、乙二醇、丙二醇、二乙二醇、二乙二醇單烷基醚，諸如式HOCH2
CH2
－O－CH2
－CH2
－O－R(其中R為1至4個碳原子之烷基)之彼等醚，尤其二乙二醇單乙基醚及其類似醚；烷基酯，諸如乙酸1－甲氧基－2－丙酯及γ－丁內酯及其類似酯；及其他非質子性溶劑。共溶劑組份(若存在)可包含約0.1重量%至高達約30重量%、較佳高達25重量%且更佳高達20重量%之組合物之總重量。
本發明之組合物亦可視情況含有其他額外組份。該等可選額外組份包括金屬錯合劑或螯合劑、抗腐蝕化合物及界面活性劑或表面活性劑。
有機或無機螯合劑或金屬錯合劑並不需要，但可視情況包括於本發明之組合物中且提供實質性益處，諸如當併入本發明之非水性清潔組合物中時改良之產物穩定性。合適之螯合劑或錯合劑之實例包括(但不限於)：反1,2－環己烷二胺四乙酸(CyDTA)，乙二胺四乙酸(EDTA)，錫酸鹽，焦磷酸鹽，亞烷基－二膦酸衍生物(例如乙烷－1－羥基－1,1－二膦酸鹽)，含有乙二胺、二伸乙基三胺或三伸乙基四胺官能部分之膦酸鹽[例如乙二胺四(亞甲基膦酸)(EDTMP)、二伸乙基三胺五(亞甲基膦酸)、三伸乙基四胺六(亞甲基膦酸)]。以組合物之重量計，金屬錯合劑或螯合劑(若存在於組合物中)將以0.1重量%至約5重量%、較佳約0.1至約2重量%之量存在。
本發明之非水性清潔組合物亦可視情況含有用於微電子清潔劑組合物中之其他腐蝕抑制劑及其類似非腐蝕性組份。該等化合物可包括(但不限於)：間苯二酚、沒食子酸(gallic acid)、沒食子酸丙酯(propyl gallate)、連苯三酚、氫醌、苯幷三唑及苯幷三唑之衍生物。以組合物之重量計，此等其他腐蝕抑制劑可以任何合適之量，一般以約0.1重量%至約5重量%、較佳約0.1重量%至約3重量%且更佳約0.2重量%至約2重量%之量存在。
本發明之組合物亦可視情況含有任何合適之兩性、非離子型、陽離子型或陰離子型表面活性劑或界面活性劑。添加界面活性劑將減少調配物之表面張力且改良待清潔之表面的潤濕性且由此改良組合物之清潔作用。此外，界面活性劑之特性可有助於微粒分散，有利於更好地清潔。任何合適之兩性、陽離子型或非離子型界面活性劑可用於本發明之組合物中。尤其合適之界面活性劑的實例包括(但不限於)：3,5－二甲基－1－己炔－3－醇(Surfynol－61)、乙氧基化2,4,7,9－四甲基－5－癸炔－4,7－二醇(Surfynol－465)、聚四氟乙烯十六烷氧基丙基甜菜鹼(Zonyl FSK)、Zonyl FSH、Triton X－100(亦即辛基苯氧基聚乙氧基乙醇)及其類似物。以組合物之重量計，界面活性劑(若存在於組合物中)將一般以0.1重量%至約5重量%、較佳0.001至約3重量%之量存在。
較佳之本發明之組合物包含約72重量% DMSO、18重量%環丁碸、1.4重量%氫氧化四甲基銨於8.1%丙二醇及0.5重量% 2－羥基吡啶中之組合物。另一較佳之本發明之組合物包含66% DMSO、17.4%環丁碸、14%丙二醇、2.4% TMAH及0.2% 2－羥基吡啶之組合物。
本發明之組合物及其作為清潔組合物用於清潔微電子裝置之效用由以下實例加以說明。
以下測試證明羥基吡啶穩定添加劑對調配物之必要性。溶液1含有(以重量計)：66% DMSO、22%環丁碸、11.2%丙二醇及0.8% TMAH。溶液2含有：66% DMSO、22%環丁碸、10.2%丙二醇及1.8% TMAH。將如下所列之0.5% 2－羥基吡啶(HP)添加至此等溶液中之每一者中。將每份溶液加熱至85℃且隨時監測。在不穩定之浸泡劑(不含羥基吡啶之彼等浸泡劑)中，pH值下降係由浸泡劑顏色變化指示。在此點處或此點以下，該浸泡劑將不顯示有效之清潔效能。
以下測試支持與David Skee之美國專利第6,599,370號及第6,585,825號中之揭示內容相關之本發明之新穎及意想不到的態樣。在Skee之此等專利中，揭示許多化合物為用於含有TMAH及金屬游離矽酸鹽之水溶液的有效浸泡劑壽命延長劑。彼等Skee專利中之浸泡劑壽命延長劑用作彼等水性組合物中之緩衝劑。然而，本發明之組合物為非水性組合物且由此羥基吡啶穩定化合物不能充當緩衝劑。因此，如由表2所陳述之結果證明，完全令人驚訝的是羥基吡啶化合物能充當本發明之非水性組合物中之穩定劑，而Skee專利之其他緩衝劑並不能如此。對於每個測試，將來自上文之溶液2(66% DMSO、22%環丁碸、10.2%丙二醇及1.8% TMAH)與各種添加劑組合使添加劑為1%之總溶液重量。接著將溶液在85℃下加熱24小時。添加劑之效能經測定為若浸泡劑在24小時內未改變顏色或下降至低於pH＝11則良好，若浸泡劑在7－24小時之間穩定則中等，且若浸泡劑在小於7小時內變化則失效。
製備清潔溶液(溶液3)且其含有約：66% DMSO、17.4%環丁碸、14%丙二醇、2.4% TMAH及0.2% 2－羥基吡啶。將具有"穿通"通道結構(通道經Si及TiN蝕刻至Al層)之圖案化Al工藝晶圓樣品置放於加熱至表3中所述之溫度歷時10分鐘的此等溶液中，其後將其移出，用去離子水沖洗兩分鐘且用氮氣吹乾。為對照，將相同晶圓在ALEG－625(J.T.Baker)，其他類似組合物(含有DMSO、環丁碸、TMAH及水)之市售半水性產物中清潔。接著評估經清潔之晶圓的灰分殘餘物移除率(0－100%移除率)及鋁腐蝕率(0－100%暴露之Al金屬損耗)。
製備清潔溶液(溶液3)且其含有約：66% DMSO、17.4%環丁碸、14%丙二醇、2.4% TMAH及0.2% 2－羥基吡啶、66% DMSO。經由將晶圓暴露於化學處理歷時設定之時間間隔且由四個點探針量測金屬厚度之變化來測定毯覆式Al及Cu晶圓的蝕刻速率。為對照，將相同晶圓在ALEG－625(J.T.Baker)，其他類似組合物之市售半水性產物中清潔。在多個代表性操作溫度下之結果製表如下。
將來自先前實例之清潔溶液3用於自具有暴露之Cr特徵的圖案化晶圓及具有PbSn焊料凸塊之另一晶圓中移除光阻劑。將此溶液之清潔性及相容性與先前實例中之ALEG－625比較。在每種狀況下，將晶圓樣品暴露於溶液歷時設定之時間及溫度，接著在去離子水中沖洗1 min，且在流動N2
下乾燥。將樣品之SEM分析用於測定清潔效率及相容性。清潔效率係以所移除之光阻劑的百分數來呈現，而若觀測到特徵形狀中有任何所觀測到之坑洞或變化，則測定溶液為不相容。
儘管本發明已參考其特定實施例描述於本文中，但應瞭解在不脫離本文中所揭示之發明概念之精神及範疇的情況下可作出變化、修改及變更。因此，其意欲涵蓋屬於附加申請專利範圍之精神及範疇中的所有該等變化、修改及變更。
Claims (16)
- 一種用於清潔微電子裝置之非水性剝離及清潔組合物，該組合物包含：a)至少一種作為剝離溶劑之有機含硫極性化合物，b)至少一種強氫氧化物鹼之無水來源，及c)至少一種羥基吡啶穩定劑。
- 如請求項1之組合物，其中以該組合物之重量計，該至少一種作為剝離溶劑之有機含硫極性化合物係以20重量%至99重量%之量存在於該組合物中，以該組合物之重量計，該強氫氧化物鹼之無水來源係以0.5重量%至20重量%之量存在於該組合物中，且以該組合物之重量計，該羥基吡啶係以0.01重量%至5重量%之量存在於該組合物中。
- 如請求項2之組合物，其中該至少一種作為剝離溶劑之有機含硫極性化合物係選自亞碸、碸、環丁碸及其混合物組成之群；該強氫氧化物鹼之無水來源係選自鹼性氫氧化物、氫氧化銨及氫氧化四級銨及其混合物；且該至少一種羥基吡啶係選自2-羥基吡啶、4-羥基吡啶及其混合物。
- 如請求項3之組合物，其中該至少一種作為剝離溶劑之有機含硫極性化合物係選自二甲亞碸、環丁碸及其混合物組成之群；該強氫氧化物鹼之無水來源係選自氫氧化四烷基銨；且該至少一種羥基吡啶係選自2-羥基吡啶。
- 如請求項4之組合物，其中該組合物包含二甲亞碸、環 丁碸、氫氧化四甲基銨及2-羥基吡啶。
- 如請求項5之組合物，其中該組合物亦包含丙二醇。
- 如請求項6之組合物，其中該二甲亞碸係以66重量%之量存在，該環丁碸係以17.4重量%之量存在，該氫氧化四甲基銨係以2.4重量%之量存在，該丙二醇係以14重量%之量存在，且該2-羥基吡啶係以0.2重量%之量存在。
- 如請求項1之組合物，其另外包含一或多種選自以下各物組成之群的組份：金屬螯合劑或錯合劑、共溶劑、抗腐蝕化合物及表面活性劑或界面活性劑。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項1之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項2之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項3之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項4 之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項5之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項6之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項7之組合物。
- 一種用於清潔微電子裝置基板而不產生任何實質金屬腐蝕之方法，該方法包含使該裝置與清潔組合物接觸足以清潔該裝置之時間，其中該清潔組合物包含如請求項8之組合物。
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