DE69027799T2 - Chemisch amplifizierter Photolack - Google Patents

Chemisch amplifizierter Photolack

Info

Publication number
DE69027799T2
DE69027799T2 DE69027799T DE69027799T DE69027799T2 DE 69027799 T2 DE69027799 T2 DE 69027799T2 DE 69027799 T DE69027799 T DE 69027799T DE 69027799 T DE69027799 T DE 69027799T DE 69027799 T2 DE69027799 T2 DE 69027799T2
Authority
DE
Germany
Prior art keywords
chemically amplified
amplified photoresist
photoresist
chemically
amplified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69027799T
Other languages
English (en)
Other versions
DE69027799D1 (de
Inventor
William Ross Brunsvold
Christopher John Knors
Ranee Wai-Ling Kwong
Steve Seiichi Miura
Melvin Warren Montgomery
Wayne Martin Moreau
Harbans Singh Sachdev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69027799D1 publication Critical patent/DE69027799D1/de
Publication of DE69027799T2 publication Critical patent/DE69027799T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/127—Spectral sensitizer containing
DE69027799T 1989-03-14 1990-02-02 Chemisch amplifizierter Photolack Expired - Lifetime DE69027799T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32284889A 1989-03-14 1989-03-14

Publications (2)

Publication Number Publication Date
DE69027799D1 DE69027799D1 (de) 1996-08-22
DE69027799T2 true DE69027799T2 (de) 1997-01-23

Family

ID=23256700

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027799T Expired - Lifetime DE69027799T2 (de) 1989-03-14 1990-02-02 Chemisch amplifizierter Photolack

Country Status (4)

Country Link
US (1) US5272042A (de)
EP (1) EP0388343B1 (de)
JP (1) JP2582450B2 (de)
DE (1) DE69027799T2 (de)

Families Citing this family (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
US5273856A (en) * 1990-10-31 1993-12-28 International Business Machines Corporation Positive working photoresist composition containing mid or near UV radiation sensitive quinone diazide and sulfonic acid ester of imide or oxime which does not absorb mid or near UV radiation
US5204226A (en) * 1991-03-04 1993-04-20 International Business Machines Corporation Photosensitizers for polysilanes
DE4112974A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112966A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2750310B2 (ja) * 1991-09-17 1998-05-13 インターナショナル・ビジネス・マシーンズ・コーポレイション 近紫外−可視域イメージング用ポジチブフォトレジスト
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
JPH0643631A (ja) * 1992-04-01 1994-02-18 Internatl Business Mach Corp <Ibm> 非イオン性ポリグリコールを含有するフォトレジスト
CA2092774A1 (en) * 1992-04-10 1993-10-11 Yuji Ueda Positive photoresist composition
JPH0692909A (ja) * 1992-04-10 1994-04-05 Sumitomo Chem Co Ltd 炭酸エステル環状化合物、その製造方法及びそれを用いてなるポジ型フォトレジスト組成物
US5804354A (en) * 1992-06-17 1998-09-08 Fujitsu Limited Composition for forming conductivity imparting agent and pattern forming method
JPH06236024A (ja) * 1992-09-24 1994-08-23 Sumitomo Chem Co Ltd フォトレジスト組成物
WO1994010608A1 (en) * 1992-10-29 1994-05-11 International Business Machines Corporation Chemically amplified photoresist
DE69322946T2 (de) * 1992-11-03 1999-08-12 Ibm Photolackzusammensetzung
JPH06214395A (ja) * 1993-01-18 1994-08-05 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
DE4302681A1 (de) * 1993-02-01 1994-08-04 Hoechst Ag Sulfonsäureester, damit hergestellte strahlungsempfindliche Gemische und deren Verwendung
JP2823768B2 (ja) * 1993-02-22 1998-11-11 松下電器産業株式会社 半導体装置の製造方法
US6703181B1 (en) 1993-03-12 2004-03-09 Kabushiki Kaisha Toshiba Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same
US5374500A (en) * 1993-04-02 1994-12-20 International Business Machines Corporation Positive photoresist composition containing photoacid generator and use thereof
TW288112B (de) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
DE4323289A1 (de) * 1993-07-12 1995-01-19 Siemens Ag Strahlungsempfindliche Lackzusammensetzung
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
US6004720A (en) 1993-12-28 1999-12-21 Fujitsu Limited Radiation sensitive material and method for forming pattern
JP3393915B2 (ja) * 1994-03-04 2003-04-07 住友化学工業株式会社 化学増幅型レジスト組成物
EP0675410B1 (de) * 1994-03-28 1999-08-04 Wako Pure Chemical Industries Ltd Resistzusammensetzung für tiefe Ultraviolettbelichtung
JP3128425B2 (ja) * 1994-04-08 2001-01-29 株式会社東芝 半導体記憶装置
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
JP3579946B2 (ja) * 1995-02-13 2004-10-20 Ｊｓｒ株式会社 化学増幅型感放射線性樹脂組成物
JPH0934112A (ja) * 1995-05-12 1997-02-07 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH0954437A (ja) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JPH0962005A (ja) * 1995-06-14 1997-03-07 Fuji Photo Film Co Ltd ネガ型感光性組成物
JPH09166871A (ja) * 1995-12-15 1997-06-24 Sumitomo Chem Co Ltd フォトレジスト組成物
EP0780732B1 (de) 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymerzusammensetzung und Rezistmaterial
EP0789279B2 (de) 1996-02-09 2004-12-08 Wako Pure Chemical Industries Ltd Polymer und Resistmaterial
EP0803775B1 (de) * 1996-04-25 2002-08-07 Fuji Photo Film Co., Ltd. Positiv-arbeitende lichtempfindliche Zusammensetzung
JP3645365B2 (ja) * 1996-08-15 2005-05-11 富士写真フイルム株式会社 遠紫外線露光用感光性樹脂組成物
US6200726B1 (en) 1996-09-16 2001-03-13 International Business Machines Corporation Optimization of space width for hybrid photoresist
TW439016B (en) * 1996-09-20 2001-06-07 Sumitomo Chemical Co Positive resist composition
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US6117622A (en) * 1997-09-05 2000-09-12 Fusion Systems Corporation Controlled shrinkage of photoresist
US6057084A (en) 1997-10-03 2000-05-02 Fusion Systems Corporation Controlled amine poisoning for reduced shrinkage of features formed in photoresist
US5976770A (en) * 1998-01-15 1999-11-02 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US6103447A (en) 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
JP4130030B2 (ja) 1999-03-09 2008-08-06 富士フイルム株式会社 感光性組成物および１，３−ジヒドロ−１−オキソ−２ｈ−インデン誘導体化合物
US6258514B1 (en) * 1999-03-10 2001-07-10 Lsi Logic Corporation Top surface imaging technique using a topcoat delivery system
KR100804873B1 (ko) 1999-06-10 2008-02-20 얼라이드시그날 인코퍼레이티드 포토리소그래피용 ｓｏｇ 반사방지 코팅
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6787283B1 (en) 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
JP4150491B2 (ja) * 2000-07-13 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
US7118908B2 (en) * 2000-10-25 2006-10-10 Bor-Iuan Jan On-spot selectively activated hydrophobic slide and preparation thereof
US6605394B2 (en) 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
US7374857B2 (en) 2001-11-30 2008-05-20 Wako Pure Chemical Industries Ltd. Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP2003302753A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd パターン形成方法
US6939662B2 (en) 2002-05-31 2005-09-06 Fuji Photo Film Co., Ltd. Positive-working resist composition
JP3851594B2 (ja) 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
EP1578870A2 (de) * 2002-12-23 2005-09-28 Aprilis, Inc. Sensibilisator-farbstoff für fotosäureerzeugende systeme
US7771915B2 (en) 2003-06-27 2010-08-10 Fujifilm Corporation Two-photon absorbing optical recording material and two-photon absorbing optical recording and reproducing method
JP4612999B2 (ja) 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP4452572B2 (ja) 2004-07-06 2010-04-21 富士フイルム株式会社 感光性組成物およびそれを用いた画像記録方法
DE602005007427D1 (de) 2004-07-20 2008-07-24 Fujifilm Corp Bilderzeugendes Material
JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP4439409B2 (ja) 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US20060204732A1 (en) 2005-03-08 2006-09-14 Fuji Photo Film Co., Ltd. Ink composition, inkjet recording method, printed material, method of producing planographic printing plate, and planographic printing plate
EP1701213A3 (de) 2005-03-08 2006-11-22 Fuji Photo Film Co., Ltd. Lichtempfindliche Zusammensetzung
JP4474317B2 (ja) 2005-03-31 2010-06-02 富士フイルム株式会社 平版印刷版の作製方法
US7354692B2 (en) * 2005-05-09 2008-04-08 International Business Machines Corporation Photoresists for visible light imaging
DE102005060061A1 (de) * 2005-06-02 2006-12-07 Hynix Semiconductor Inc., Ichon Polymer für die Immersionslithographie, Photoresistzusammensetzung, die selbiges enthält, Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
EP1757635B1 (de) 2005-08-23 2008-10-08 FUJIFILM Corporation Härtbare Tinte enthaltend modifiziertes Oxetan
JP4757574B2 (ja) 2005-09-07 2011-08-24 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法、及び、平版印刷版
ATE494341T1 (de) 2005-11-04 2011-01-15 Fujifilm Corp Härtbare tintenzusammensetzung und oxetanverbindung
EP1829684B1 (de) 2006-03-03 2011-01-26 FUJIFILM Corporation Härtbare Zusammensetzung, Tintenzusammensetzung, Tintenstrahlaufzeichnungsverfahren und Flachdruckplatte
JP5276264B2 (ja) 2006-07-03 2013-08-28 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、平版印刷版の製造方法
US20100039684A1 (en) * 2006-08-12 2010-02-18 Kolb Eric S Sensitizer dyes for photoacid generating systems using short visible wavelengths
JP2008189776A (ja) 2007-02-02 2008-08-21 Fujifilm Corp 活性放射線硬化型重合性組成物、インク組成物、インクジェット記録方法、印刷物、平版印刷版の作製方法、及び平版印刷版
US8541063B2 (en) 2007-02-06 2013-09-24 Fujifilm Corporation Undercoat solution, ink-jet recording method and ink-jet recording device
US8240808B2 (en) 2007-02-07 2012-08-14 Fujifilm Corporation Ink-jet head maintenance device, ink-jet recording device and ink-jet head maintenance method
JP5227521B2 (ja) 2007-02-26 2013-07-03 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、インクセット
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP2008208266A (ja) 2007-02-27 2008-09-11 Fujifilm Corp インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法、および平版印刷版
JP5224699B2 (ja) 2007-03-01 2013-07-03 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法、及び平版印刷版
JP5243072B2 (ja) 2007-03-30 2013-07-24 富士フイルム株式会社 インク組成物、並びに、それを用いた画像記録方法及び画像記録物
JP5306681B2 (ja) 2007-03-30 2013-10-02 富士フイルム株式会社 重合性化合物、重合体、インク組成物、印刷物及びインクジェット記録方法
JP5159141B2 (ja) 2007-03-30 2013-03-06 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、平版印刷版の作製方法及び平版印刷版
US7566527B2 (en) * 2007-06-27 2009-07-28 International Business Machines Corporation Fused aromatic structures and methods for photolithographic applications
JP5111039B2 (ja) 2007-09-27 2012-12-26 富士フイルム株式会社 重合性化合物、重合開始剤、および染料を含有する光硬化性組成物
JP4898618B2 (ja) 2007-09-28 2012-03-21 富士フイルム株式会社 インクジェット記録方法
JP5227560B2 (ja) 2007-09-28 2013-07-03 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、成形印刷物の製造方法
JP5265165B2 (ja) 2007-09-28 2013-08-14 富士フイルム株式会社 塗布装置及びこれを用いるインクジェット記録装置
EP2206115A1 (de) * 2007-10-23 2010-07-14 STX Aprilis, Inc. Vorrichtungen und verfahren zur schwellensteuerung der photopolymerisierung für die holografische datenspeicherung unter verwendung von mindestens zwei wellenlängen
US8240838B2 (en) 2007-11-29 2012-08-14 Fujifilm Corporation Ink composition for inkjet recording, inkjet recording method, and printed material
JP4723557B2 (ja) 2007-12-14 2011-07-13 Ａｚエレクトロニックマテリアルズ株式会社 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法
JP5254632B2 (ja) 2008-02-07 2013-08-07 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、成形印刷物
US20090214797A1 (en) 2008-02-25 2009-08-27 Fujifilm Corporation Inkjet ink composition, and inkjet recording method and printed material employing same
JP5583329B2 (ja) 2008-03-11 2014-09-03 富士フイルム株式会社 顔料組成物、インク組成物、印刷物、インクジェット記録方法、及びポリアリルアミン誘導体
JP4914862B2 (ja) 2008-03-26 2012-04-11 富士フイルム株式会社 インクジェット記録方法、及び、インクジェット記録装置
JP5383133B2 (ja) 2008-09-19 2014-01-08 富士フイルム株式会社 インク組成物、インクジェット記録方法及び印刷物成形体の製造方法
JP2010077228A (ja) 2008-09-25 2010-04-08 Fujifilm Corp インク組成物、インクジェット記録方法、及び、印刷物
EP2169018B1 (de) 2008-09-26 2012-01-18 Fujifilm Corporation Tintenzusammensetzung und Tintenaufzeichnungsverfahren
JP5461809B2 (ja) 2008-09-29 2014-04-02 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP2010180330A (ja) 2009-02-05 2010-08-19 Fujifilm Corp 非水系インク、インクセット、画像記録方法、画像記録装置、および記録物
JP5350827B2 (ja) 2009-02-09 2013-11-27 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP5349095B2 (ja) 2009-03-17 2013-11-20 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP5349097B2 (ja) 2009-03-19 2013-11-20 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、成形印刷物の製造方法
JP5383289B2 (ja) 2009-03-31 2014-01-08 富士フイルム株式会社 インク組成物、インクジェット用であるインク組成物、インクジェット記録方法、およびインクジェット法による印刷物
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5572026B2 (ja) 2009-09-18 2014-08-13 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP5530141B2 (ja) 2009-09-29 2014-06-25 富士フイルム株式会社 インク組成物及びインクジェット記録方法
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP2644664B1 (de) 2012-03-29 2015-07-29 Fujifilm Corporation Durch aktinische Strahlung härtbare Tintenzusammensetzung, Tintenstrahlaufzeichnungsverfahren, Dekorfolie, Dekorfolienformprodukt, Verfahren zur Herstellung eines In-Mold-Formartikels sowie In-Mold-Formartikel
JP6059953B2 (ja) * 2012-10-29 2017-01-11 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物
JP5980702B2 (ja) 2013-03-07 2016-08-31 富士フイルム株式会社 インクジェットインク組成物、インクジェット記録方法、及び、成型印刷物の製造方法
JP5939644B2 (ja) 2013-08-30 2016-06-22 富士フイルム株式会社 画像形成方法、インモールド成型品の製造方法、及び、インクセット
JP6646443B2 (ja) * 2015-01-09 2020-02-14 キヤノン株式会社 紫外線硬化性液体組成物、紫外線硬化型インクジェット用インク、紫外線硬化型湿式電子写真用液体現像剤及び紫外線硬化型静電インクジェット用インク、並びにこれらを用いた画像形成方法
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
JP2018127513A (ja) 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用
JP2020067547A (ja) 2018-10-24 2020-04-30 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物およびその使用

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3782939A (en) * 1972-02-09 1974-01-01 Mining And Mfg Co Dry positive-acting photoresist
JPS5113013B2 (de) * 1972-05-31 1976-04-24
US4069054A (en) * 1975-09-02 1978-01-17 Minnesota Mining And Manufacturing Company Photopolymerizable composition containing a sensitized aromatic sulfonium compound and a cationacally polymerizable monomer
JPS55118030A (en) * 1979-03-06 1980-09-10 Fuji Photo Film Co Ltd Photopolymerizable composition
US4371605A (en) * 1980-12-09 1983-02-01 E. I. Du Pont De Nemours And Company Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates
US4425424A (en) * 1982-04-08 1984-01-10 Eastman Kodak Company Dye-forming compositions
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
GB8413395D0 (en) * 1984-05-25 1984-07-04 Ciba Geigy Ag Production of images
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
JPS62212646A (ja) * 1986-03-14 1987-09-18 Nec Corp 感光性組成物
JPS62212648A (ja) * 1986-03-14 1987-09-18 Nec Corp 感光性組成物
JPS62251743A (ja) * 1986-04-25 1987-11-02 Konika Corp 感光性組成物及び感光性平版印刷版
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
US5055439A (en) * 1989-12-27 1991-10-08 International Business Machines Corporation Photoacid generating composition and sensitizer therefor
US5077174A (en) * 1990-04-10 1991-12-31 E. I. Du Pont De Nemours And Company Positive working dry film element having a layer of resist composition
US5120633A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists

Also Published As

Publication number Publication date
EP0388343A3 (de) 1991-08-21
EP0388343B1 (de) 1996-07-17
EP0388343A2 (de) 1990-09-19
JP2582450B2 (ja) 1997-02-19
DE69027799D1 (de) 1996-08-22
US5272042A (en) 1993-12-21
JPH03206458A (ja) 1991-09-09

Similar Documents

Publication Publication Date Title
DE69027799D1 (de) Chemisch amplifizierter Photolack
DE69407882T2 (de) Chemisch verstärkter Resist
DE69320241T2 (de) Chemisch amplifizierte Resistzusammensetzung
KR900014993U (ko) 잭
KR910003461U (ko) 잭
KR920008460U (ko) 잭
DE69025875T2 (de) Leseverstärker
KR900019046A (ko) 센스 증폭기 회로
KR900019396U (ko) 재크
DE69024733D1 (de) Leseverstärkerschaltung
ATA14989A (de) Drehkreuz
DK660689A (da) Styrenoxid-produkter
DK163414C (da) Mund-til-mund-genoplivelses-maske
TR24963A (tr) Kendiliginden acilabilir semsiye
FI904121A0 (fi) Osiensyöttölaite
KR900018558U (ko) 잭 (Jack)
DK164309C (da) Mnemoteknisk hjaelpemiddel
KR890016328U (ko) 잭(jack)
KR910005117U (ko) 4-낸드게이트
KR910004031U (ko) 마스크
BR8900457A (pt) Chumbador
BR8900456A (pt) Chumbador
BR8900455A (pt) Chumbador
KR910004340U (ko) 소형 권양기
KR910001633U (ko) 잭

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)