KR900018746A - 공중합체 결합제를 사용한 감광성 내식막 - Google Patents

공중합체 결합제를 사용한 감광성 내식막 Download PDF

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KR900018746A
KR900018746A KR1019900007323A KR900007323A KR900018746A KR 900018746 A KR900018746 A KR 900018746A KR 1019900007323 A KR1019900007323 A KR 1019900007323A KR 900007323 A KR900007323 A KR 900007323A KR 900018746 A KR900018746 A KR 900018746A
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photoresist
resin
hydrogenated
acid
photosensitive
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KR1019900007323A
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KR0155997B1 (ko
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텍커레이 제임스
더블유. 오슬라 죠지
신타 로저
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마이클 굴라
쉬플리 캄파니 인코포레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G03F7/0295—Photolytic halogen compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Phenolic Resins Or Amino Resins (AREA)

Abstract

내용 없음

Description

공중합체 결합제를 사용한 감광성 내식막
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 248nm에서의 수소화 폴리비닐 페놀의 흡수성을 수지의 %수소화도의 함수로서 나타낸 도면이고, 제2도는 수소화 폴리비닐 페놀의 용해 속도를 수지의 %수소화도의 함수로서 나타낸 도면이고, 제3도는 수소화 폴리비닐 페놀 결합제를 사용하여 제조한 감광성 내식막에 대한 콘트라스트 커브.

Claims (20)

  1. 수지 결합제와 감광성 성분의 혼합물을 포함하는 감광성 내식막 조성물에 있어서, 수지 결합제가 노출된 감광성 내식막 피복물이 감광성 내식막용 현상액에서 현상되는 것을 방지하기에 불충분한 농도로 대부분이 페놀성 단위이고 약간이 사이클릭 알콜성 단위인 공중합체를 포함하고 감광성 성분이 감광성 내식막 피복물을 방사조사선에 노출시킴으로써 잠상을 생성시킬 수 있는 양으로 존재하는 감광성 내식막 조성물.
  2. 제1항에 있어서, 감광성 성분이 (1) 0-퀴논 디아지드 설폰산 에스테르 및 (2) 아미노플라스트 또는 페놀플라스트와 광활성 산 생성 화합물의 혼합물로 이루어진 그룹으로부터 선택되는 감광성 내식막.
  3. 제2항에 있어서, 수지 결합체가 하기의 그룹으로부터 선택되는 공중합체인 감광성 내식막.
    및
    상기 일반식에서, (1)은 페놀성 단위를 나타내고, (2)는 사이클릭 알콜 단위를 나타내고, Z는 탄소수 1 내지 3의 알킬렌 브릿지이고, A는 방향족 환의 치환체, 예를들면, 탄소수 1 내지 3의 저급 알킬, 할로, 탄소수 1 내지 3의 알콕시, 하이드록실, 니트로, 아미노이고, a는 0 내지 3이고, B는 수소, 탄소수 1 내지 3의 저급 알킬, 할로, 탄소수 1 내지 3의 알콕시, 하이드록실, 니트로 및 아미노의 그룹으로부터 선택되는 치환체이고, 단 B치환체중 적어도 3개의 수소이며, b는 6 내지 10의 홀수인 정수이고, x는 공중합체중의 단위(1)의 몰 분율이며 0.50 내지 0.99이다.
  4. 제2항에 있어서, 수지 결합제가 %수소화가 약 1 내지 30몰 %인 수소화 페놀성 수지인 감광성 내식막.
  5. 제4항에 있어서, %수소화가 5 내지 15몰 %인 감광성 내식막.
  6. 제4항에 있어서, 수소화 페놀성 수지가 수소화 노볼락 수지이고 감광성 성분이 나프토퀴논 디아지드 설폰산 에스테르인 감광성 내식막.
  7. 제4항에 있어서, 수소화 페놀성 수지가 수소화 폴리비닐 페놀 수지이고 감광성 성분이 나프토퀴논 디아지드 설폰산 에스테르인 감광성 내식막.
  8. 제4항에 있어서, 수소화 페놀성 수지가 수소화 폴리비닐 페놀 수지이고 감광성 성분이 아미노플라스트와 산 생성 화합물의 혼합물인 감광성 내식막.
  9. 제8항에 있어서, 감광성 내식막이 네가티브 작용성 감광성 내식막인 감광성 내식막.
  10. 제8항에 있어서, 아미노플라스트가 멜라민포름알데하이드 수지인 감광성 내식막.
  11. 제8항에 있어서, 광활성 산 생성 화합물이 (Ⅰ) 파장이 약 350nm이하인 화학조사선을 선택적으로 흡수하고, (Ⅱ) 산 경화 수지 및 아미노플라스트 또는 페놀플라스트와 상용성이고, (Ⅲ) 염기성 수용액에서 현상될 수 있고, (Ⅳ) 파장이 약 350nm이하인 화학 조사선에 노출되는 경우, 승온에서 산 경화 수지 시스템을 가교 결합시키는 할로겐산을 생성하여 열에 안정한 네가티브상을 생성시킬 수 있는 화합물인 감광성 내식막.
  12. 제11항에 있어서, 광활성 산 생성 화합물이 1, 1-비스[p-클로로페닐]-2, 2, 2-트리클로로에탄인 감광성 내식막.
  13. 시스템의 수지 성분이 부분적으로 수소화된 폴리 비닐 페놀인 산 경화 수지 시스템과 광활성 산 생성 화합물의 혼합물을 포함하는 감광성 내식막에 있어서, 폴리비닐페놀 성분의 대부분이 페놀성 그룹이고 약간이 사이클릭 알콜성 그룹이며, 노출된 감광성 내식막 피복물이 감광성 내식막용 현상액에 현상되는 것을 방지하기에 불충분한 농도로 존재하고, 광활성 산 성분이 감광 내식막 피복물을 방사 조사선에 노출시킨 후에 잠상을 생성시킬 수 있는 양으로 존재하는 감광성 내식막.
  14. 제13항에 있어서, 수직 결합체가 사이클릭 알콜성 그룹을 갖는 1 내지 30몰%의 수소화 폴리비닐 페놀 수지인 감광성 내식막.
  15. 제14항에 있어서, 사이클릭 알콜성 그룹이 수지의 5 내지 15몰%를 구성하는 감광성 내식막.
  16. 제14항에 있어서, 산 경화 수지 시스템이 아미노플라스트와 수소화 폴리비닐페놀 수지의 혼합물인 감광성 내식막.
  17. 제14항에 있어서, 감광성 내식막이 포지티브 작용성인 감광성 내식막인 감광성 내식막.
  18. 제14항에 있어서, 감광성 내식막이 네가티브 작용성인 감광성 내식막인 감광성 내식막.
  19. 제16항에 있어서, 아미노플라스트가 멜라민 수지인 감광성 내식막.
  20. 제16항에 있어서, 아미노플라스트가 멜라민 포름알데하이드 수지인 감광성 내식막.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900007323A 1989-05-22 1990-05-22 공중합체 결합제를 사용한 감광성 내식막 KR0155997B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US354800 1989-05-22
US07/354,800 US5128232A (en) 1989-05-22 1989-05-22 Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units

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KR900018746A true KR900018746A (ko) 1990-12-22
KR0155997B1 KR0155997B1 (ko) 1998-11-16

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US (1) US5128232A (ko)
EP (1) EP0401499B1 (ko)
JP (1) JP2960751B2 (ko)
KR (1) KR0155997B1 (ko)
DE (1) DE69024101T2 (ko)

Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2023230A1 (en) * 1989-08-17 1991-02-18 Satoshi Urano Solvent based coating composition
JP2660352B2 (ja) * 1989-09-20 1997-10-08 日本ゼオン株式会社 レジスト組成物
US5183722A (en) * 1989-12-01 1993-02-02 Tosoh Corporation Positive photosensitive composition for forming lenses containing 1,2-naphthoquinone diazide sulfonate photosensitizer, alkali-soluble resin and thermosetting agent and process for producing the composition
EP0450869A3 (en) * 1990-04-03 1992-01-29 Hewlett-Packard Company Image reversal in a negative deep ultraviolet photoresist
JPH04110945A (ja) * 1990-08-31 1992-04-13 Mitsubishi Kasei Corp ネガ型感光性組成物
EP0458325B1 (en) * 1990-05-25 1998-08-19 Mitsubishi Chemical Corporation Negative photosensitive composition and method for forming a resist pattern
GB2259152B (en) * 1991-06-14 1995-01-11 Nippon Zeon Co Resist composition
JP2722870B2 (ja) * 1991-06-14 1998-03-09 日本ゼオン株式会社 レジスト組成物
US5258257A (en) * 1991-09-23 1993-11-02 Shipley Company Inc. Radiation sensitive compositions comprising polymer having acid labile groups
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
EP0551105A3 (en) * 1992-01-07 1993-09-15 Fujitsu Limited Negative type composition for chemically amplified resist and process and apparatus of chemically amplified resist pattern
JP3016952B2 (ja) * 1992-04-28 2000-03-06 クラリアント インターナショナル リミテッド ネガ型フォトレジスト組成物
US5340696A (en) * 1993-01-29 1994-08-23 Shipley Company Inc. Photoresist compositions with copolymer binder having phenolic and nonaromatic cyclic alcohol units where the distribution of the cyclic alcohol concentration is less than 8 mole percent
TW288112B (ko) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
US5691101A (en) * 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
TW323295B (ko) * 1994-12-20 1997-12-21 Ajinomoto Kk
US5514520A (en) * 1995-03-16 1996-05-07 Shipley Company, L.L.C. Radiation sensitive composition comprising polymer having inert blocking groups
US5541263A (en) * 1995-03-16 1996-07-30 Shipley Company, L.L.C. Polymer having inert blocking groups
DE69631709T2 (de) * 1995-03-16 2005-02-10 Shipley Co., L.L.C., Marlborough Strahlungsempfindliche Zusammensetzung, die ein Polymer mit Schutzgruppen enthält
US5700624A (en) * 1995-05-09 1997-12-23 Shipley Company, L.L.C. Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups
US5731386A (en) * 1995-05-09 1998-03-24 Shipley Company, L.L.C. Polymer for positive acid catalyzed resists
DE19533607A1 (de) * 1995-09-11 1997-03-13 Basf Ag Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen
DE19533608A1 (de) * 1995-09-11 1997-03-13 Basf Ag Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen
US5876899A (en) * 1996-09-18 1999-03-02 Shipley Company, L.L.C. Photoresist compositions
US7147983B1 (en) 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US5866299A (en) * 1997-06-18 1999-02-02 Shipley Company, L.L.C. Negative photoresist composition
US5910394A (en) * 1997-06-18 1999-06-08 Shipley Company, L.L.C. I-line photoresist compositions
JP3875280B2 (ja) 1997-07-15 2007-01-31 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ミクロリソグラフィーのための改良された溶解抑制レジスト
AU3964199A (en) * 1998-04-07 1999-10-25 Euv Limited Liability Corporation Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
US6159656A (en) * 1998-06-26 2000-12-12 Fuji Photo Film Co., Ltd. Positive photosensitive resin
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
JP3929653B2 (ja) 1999-08-11 2007-06-13 富士フイルム株式会社 ネガ型レジスト組成物
US6387596B2 (en) * 1999-08-30 2002-05-14 International Business Machines Corporation Method of forming resist images by periodic pattern removal
JP3989149B2 (ja) 1999-12-16 2007-10-10 富士フイルム株式会社 電子線またはｘ線用化学増幅系ネガ型レジスト組成物
WO2002006365A1 (fr) * 2000-07-13 2002-01-24 Nippon Steel Chemical Co., Ltd. Oligomeres aromatique hydrogenes et leur procede de fabrication
US7132214B2 (en) * 2000-09-08 2006-11-07 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP2005099683A (ja) * 2003-09-05 2005-04-14 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物及びこれを用いたレジストパターンの形成方法
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7781141B2 (en) 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
US7175944B2 (en) * 2004-08-31 2007-02-13 Micron Technology, Inc. Prevention of photoresist scumming
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
JP4439409B2 (ja) 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
US20070178404A1 (en) * 2006-01-30 2007-08-02 International Business Machines Corporation Methods of preventing defects in antireflective coatings
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI358613B (en) 2006-03-10 2012-02-21 Rohm & Haas Elect Mat Compositions and processes for photolithography
EP2420891B1 (en) 2006-10-30 2021-06-23 Rohm and Haas Electronic Materials LLC Process for immersion lithography
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
EP1998222B1 (en) 2007-04-06 2013-03-20 Rohm and Haas Electronic Materials LLC Coating compositions
JP2009199058A (ja) 2007-11-05 2009-09-03 Rohm & Haas Electronic Materials Llc 液浸リソグラフィーのための組成物および方法
JP2009199061A (ja) 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP3051348A1 (en) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2784584A1 (en) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2216683B1 (en) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Substrates coated with an antireflective composition and a photoresist
EP2216684B1 (en) 2009-02-08 2015-10-07 Rohm and Haas Electronic Materials LLC Method of forming a photoresist image comprising an undercoat layer
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
TWI468858B (zh) 2009-06-08 2015-01-11 羅門哈斯電子材料有限公司 光微影製程
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
EP2267532B1 (en) 2009-06-22 2015-08-19 Rohm and Haas Electronic Materials, L.L.C. Photoacid generators and photoresists comprising same
TWI449084B (zh) 2009-06-26 2014-08-11 羅門哈斯電子材料有限公司 形成電子裝置之方法
JP5698923B2 (ja) 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 自己整合型スペーサー多重パターニング方法
JP5753351B2 (ja) 2009-11-19 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 電子デバイスを形成する方法
TWI464140B (zh) 2009-12-10 2014-12-11 羅門哈斯電子材料有限公司 膽酸鹽光酸產生劑及含該光酸產生劑之光阻
TWI477495B (zh) 2009-12-10 2015-03-21 羅門哈斯電子材料有限公司 光酸產生劑及含該光酸產生劑之光阻
EP2336826B1 (en) 2009-12-14 2012-10-24 Rohm and Haas Electronic Materials LLC Sulfonyl photoacid generators and photoresists comprising same
KR101831685B1 (ko) 2010-01-25 2018-02-23 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 질소-함유 화합물을 포함하는 포토레지스트
US8473271B2 (en) * 2010-03-12 2013-06-25 Synopsys, Inc. Fast photolithography process simulation to predict remaining resist thickness
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
JP5756672B2 (ja) 2010-04-27 2015-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
EP2428842A1 (en) 2010-09-14 2012-03-14 Rohm and Haas Electronic Materials LLC Photoresists comprising multi-amide component
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP2012136507A (ja) 2010-11-15 2012-07-19 Rohm & Haas Electronic Materials Llc 塩基反応性光酸発生剤およびこれを含むフォトレジスト
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US9122159B2 (en) 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9547238B2 (en) 2012-10-16 2017-01-17 Eugen Pavel Photoresist with rare-earth sensitizers
US9029065B2 (en) 2012-10-26 2015-05-12 Rohm And Haas Electronic Materials Llc Photoacid generating compound and photoresist composition comprising same, coated article comprising the photoresist and method of making an article
US10527934B2 (en) 2012-10-31 2020-01-07 Rohm And Haas Electronic Materials Llc Photoresists comprising ionic compound
US9541834B2 (en) 2012-11-30 2017-01-10 Rohm And Haas Electronic Materials Llc Ionic thermal acid generators for low temperature applications
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9581901B2 (en) 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US9229319B2 (en) 2013-12-19 2016-01-05 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
EP2998297A1 (en) 2014-09-18 2016-03-23 Heraeus Materials Korea Corporation Photo-acid generating compounds, compositions comprising said compounds, composite and process for making said composite as well as uses of said compounds
US9383644B2 (en) 2014-09-18 2016-07-05 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
US9477150B2 (en) 2015-03-13 2016-10-25 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102534516B1 (ko) * 2015-08-18 2023-05-22 디아이씨 가부시끼가이샤 노볼락형 페놀성 수산기 함유 수지 및 레지스트막
KR102021456B1 (ko) 2015-08-21 2019-09-16 헤레우스 프레셔스 메탈즈 노스 아메리카 데이켐 엘엘씨 레지스트 적용에서 광산 발생제로서 술폰산 유도체 화합물
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
EP3182203A1 (en) 2015-12-18 2017-06-21 Heraeus Precious Metals North America Daychem LLC A combination of nit derivatives with sensitizers
US11448964B2 (en) 2016-05-23 2022-09-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US11500291B2 (en) 2017-10-31 2022-11-15 Rohm And Haas Electronic Materials Korea Ltd. Underlying coating compositions for use with photoresists
US10466597B2 (en) * 2017-11-01 2019-11-05 Texas Instruments Incorporated Methods and apparatus to control grayscale photolithography
KR20230039770A (ko) 2018-03-16 2023-03-21 헤레우스 에퓨리오 엘엘씨 레지스트 응용에서 광산 발생제로서의 시클릭 술포네이트 화합물
WO2022272226A1 (en) 2021-06-23 2022-12-29 Heraeus Epurio Llc Oxathianium ion-containing sulfonic acid derivative compound as photoacid generators in resist applications

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (ko) * 1972-05-05 1974-11-27
US4148654A (en) * 1976-07-22 1979-04-10 Oddi Michael J Positive acting photoresist comprising diazide ester, novolak resin and rosin
DE3151078A1 (de) * 1981-12-23 1983-07-28 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung von reliefbildern
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
DE3325023A1 (de) * 1983-07-11 1985-01-24 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
IE57143B1 (en) * 1984-06-01 1992-05-06 Rohm & Haas Photosensitive coating compositions,thermally stable coating prepared from them,and the use of such coatings in forming thermally stable polymer images
NL8502134A (nl) * 1985-07-26 1987-02-16 Dsm Resins Bv Gehydrogeneerde koolwaterstofhars en toepassing daarvan in lijmen.
CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
JP2618692B2 (ja) * 1988-06-23 1997-06-11 日本ゼオン株式会社 レジスト組成物
JP2571130B2 (ja) * 1989-09-20 1997-01-16 日本ゼオン株式会社 レジスト組成物

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US5128232A (en) 1992-07-07
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JPH0387746A (ja) 1991-04-12
JP2960751B2 (ja) 1999-10-12
DE69024101D1 (de) 1996-01-25
KR0155997B1 (ko) 1998-11-16

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