KR880009291A - 포지티브-작용성 감광성 내식막 조성물 - Google Patents

포지티브-작용성 감광성 내식막 조성물 Download PDF

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Publication number
KR880009291A
KR880009291A KR1019880000392A KR880000392A KR880009291A KR 880009291 A KR880009291 A KR 880009291A KR 1019880000392 A KR1019880000392 A KR 1019880000392A KR 880000392 A KR880000392 A KR 880000392A KR 880009291 A KR880009291 A KR 880009291A
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KR
South Korea
Prior art keywords
positive
photoresist composition
alkali
novolak resin
composition
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Application number
KR1019880000392A
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English (en)
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KR950007568B1 (ko
Inventor
야스마사 카와베
카즈야 우에니시
타다요시 코꾸보
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후지샤싱필름 가부시끼가이샤
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Publication of KR880009291A publication Critical patent/KR880009291A/ko
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Publication of KR950007568B1 publication Critical patent/KR950007568B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

내용 없음.

Description

포지티브-작용성 감광성 내식막 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 에틸 락테이트 또는 에틸 락테이트중에 용해된, 감광물질인 2,3,4,3′,4′,5′-헥사하이드록시벤조페논의 1,2-나프토퀴논디아지드-4-및/또는 -5-설포네이트 및 알칼리-가용성 노볼락 수지로 이루어짐을 특징으로 하는 포지티브-작용성 감광성 내식막 조성물.
  2. 제1항에 있어서,2,3,4.3′,4′,5′-헥사하이드록시벤조페논의 1,2-나프트퀴논디아지드-4-및/또는-5-설포네이트가 하기 일반식(A)의 화합물인 포지티브-작용성 감광성 내식막 조성물.
    상기식에서, R은 동원하거나 상이할 수 있으며, 각각 수소원자, 1,2-나프트퀴논디아지드-4-설포닐 그룹 또는 1,2-나프토퀴논디아지드-5-설포닐 그룹이다.
  3. 제1항에 있어서, 2,3,4,3′,4′,5′-헥사하이드록시벤조페논의 1,2-나프토퀴논디아지드-4-및/또는-5-설포네이트의 에스테르화 비율이 40% 이상인 포지티브-작용성 감광성 내식막 조성물.
  4. 제1항에 있어서, 알칼리-가용성 노볼락 수지의 분자량이 1,000 내지 50,000인 포지티브-작용성 감광성 내식막 조성물.
  5. 제1항에 있어서, 알칼리-가용성 노볼락 수지가 페놀과 페놀 몰당 0.6 내지 1.0몰의 알데히드와의 산 촉매부가 축합 생성물인 포지티브-작용성 감광성 내식막 조성물.
  6. 제1항에 있어서, 감광물질이 알칼리-가용성 노볼락 수지 10O중량부당 5 내지 100중량부의 양으로 존재하는 포지티브-작용성 감광성 내식막 조성물.
  7. 제1항에 있어서, 조성물의 고체 함량이 조성물의 총중량을 기준으로 하여 약 10 내지 약 50중량%인 포지티브-작용성 감광성 내식막 조성물.
    ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
KR1019880000392A 1987-01-20 1988-01-20 포지티브 작용성 감광성 내식막 조성물 KR950007568B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-10180 1987-01-20
JP10180/87 1987-01-20
JP62010180A JPS63178228A (ja) 1987-01-20 1987-01-20 ポジ型フオトレジスト組成物

Publications (2)

Publication Number Publication Date
KR880009291A true KR880009291A (ko) 1988-09-14
KR950007568B1 KR950007568B1 (ko) 1995-07-12

Family

ID=11743087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880000392A KR950007568B1 (ko) 1987-01-20 1988-01-20 포지티브 작용성 감광성 내식막 조성물

Country Status (5)

Country Link
US (1) US4863828A (ko)
EP (1) EP0275970B1 (ko)
JP (1) JPS63178228A (ko)
KR (1) KR950007568B1 (ko)
DE (1) DE3879516T2 (ko)

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DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
JP2697039B2 (ja) * 1988-12-06 1998-01-14 住友化学工業株式会社 ポジ型レジスト組成物の製造方法
JPH02222955A (ja) * 1989-02-23 1990-09-05 Tokyo Ohka Kogyo Co Ltd ポジ型感光性組成物
AU5353790A (en) * 1989-04-27 1990-11-16 Olin Hunt Specialty Products Inc. Hexahydroxybenzophenone compounds as sensitivity enhancers for radiation sensitive mixtures
JP2846892B2 (ja) * 1989-07-19 1999-01-13 三菱化学株式会社 平版印刷版の製造法
JPH0350547A (ja) * 1989-07-19 1991-03-05 Mitsubishi Kasei Corp 平版印刷版の製造法
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
US5256521A (en) * 1989-09-19 1993-10-26 Ocg Microelectronic Materials, Inc. Process of developing a positive pattern in an O-quinone diazide photoresist containing a tris-(hydroxyphenyl) lower alkane compound sensitivity enhancer
US5196517A (en) * 1989-10-30 1993-03-23 Ocg Microelectronic Materials, Inc. Selected trihydroxybenzophenone compounds and their use as photoactive compounds
US5219714A (en) * 1989-10-30 1993-06-15 Ocg Microelectronic Materials, Inc. Selected trihydroxybenzophenone compounds and their use in photoactive compounds and radiation sensitive mixtures
JP2571136B2 (ja) * 1989-11-17 1997-01-16 日本ゼオン株式会社 ポジ型レジスト組成物
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH03242650A (ja) * 1990-02-20 1991-10-29 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JPH03294861A (ja) * 1990-04-13 1991-12-26 Mitsubishi Petrochem Co Ltd ポジ型フォトレジスト組成物
US5268256A (en) * 1990-08-02 1993-12-07 Ppg Industries, Inc. Photoimageable electrodepositable photoresist composition for producing non-tacky films
EP0469537B1 (en) * 1990-08-02 1998-12-30 Ppg Industries, Inc. Photoimageable electrodepositable photoresist composition
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物
EP0510670B1 (en) * 1991-04-26 1996-09-25 Sumitomo Chemical Company, Limited Positive resist composition
US5302489A (en) * 1991-10-29 1994-04-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
US5206348A (en) * 1992-07-23 1993-04-27 Morton International, Inc. Hexahydroxybenzophenone sulfonate esters of diazonaphthoquinone sensitizers and positive photoresists employing same
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JPH06186744A (ja) * 1992-12-22 1994-07-08 Sumitomo Bakelite Co Ltd 感光性樹脂組成物
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US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound

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Also Published As

Publication number Publication date
DE3879516T2 (de) 1993-10-07
JPS63178228A (ja) 1988-07-22
KR950007568B1 (ko) 1995-07-12
EP0275970A3 (en) 1989-07-19
EP0275970B1 (en) 1993-03-24
DE3879516D1 (de) 1993-04-29
US4863828A (en) 1989-09-05
EP0275970A2 (en) 1988-07-27

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