KR890005563A - 포지티브 감광성내식막용 노볼락 수지 - Google Patents

포지티브 감광성내식막용 노볼락 수지 Download PDF

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Publication number
KR890005563A
KR890005563A KR870012598A KR870012598A KR890005563A KR 890005563 A KR890005563 A KR 890005563A KR 870012598 A KR870012598 A KR 870012598A KR 870012598 A KR870012598 A KR 870012598A KR 890005563 A KR890005563 A KR 890005563A
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South Korea
Prior art keywords
cresol
region
positive photoresist
polystyrene
novolak resin
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KR870012598A
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English (en)
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KR960006405B1 (ko
Inventor
후미오 오이
히루요시 오사키
아키히로 후루타
유키카즈 우에무라
타카오 니노미야
야스노리 우에타니
마코토 하나바타
Original Assignee
니시자와 요시히코
스미토모 가가구 고오교오 가부시키가이샤
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Application filed by 니시자와 요시히코, 스미토모 가가구 고오교오 가부시키가이샤 filed Critical 니시자와 요시히코
Publication of KR890005563A publication Critical patent/KR890005563A/ko
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Publication of KR960006405B1 publication Critical patent/KR960006405B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

포지티브 감광성 내식막용 노볼락수지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에서 정의한 특정 노볼락수지의 대표적인 GPC패턴을 나타낸다.
제 2 도는 통상적으로 공지된 노볼락수지의 대표적인 GPC패턴을 나타낸다.

Claims (5)

  1. 페놀과 포름알데히드를 부가 축합 반응시켜 제조되고 겔 투와 크로마토그라피 패턴(GPC 패턴) [UV(254nm)검출기를 사용하여 측정] 의 면적비가 폴리스티렌으로 계산한 분자량이 150 내지 500미만(페놀과 미반응 단량제를 포함하지 않음)인 범위(이후 A영역으로 칭함)가 8-35%, 폴리스티렌으로 계산한 분자량이 500내지 5000미만인 범위(이후 B영역으로 칭함)가 0-30% 그리고 폴리스티렌으로 계산한 분자량이 5000을 초과하는 범위(이후 C영역으로 칭함)가 35-92%이고, 그밖에, A영역에 대한 B영역의 비가 2.50이하인 것을 특징으로 하는 포지티브 감광성 내식막용 노볼락 수지.
  2. 제1항에 있어서, 폴리스티렌으로 계산한 노볼락 수지의 중량 평균분자량이 3000-35000인것을 특징으로 하는 포지타브 감광성내식막용 노볼락수지.
  3. 제1항에 있어서, 페놀로서 크레솔을 사용하는 것을 특징으로하는 포지티브 감광성내식막용 노볼락수지.
  4. 제3항에 있어서, 크레솔이 m-크레솔과 p-크레솔로 이루어진것을 특징으로 하는 포지티브 감광성 내식막용 노볼락수지.
  5. 제4항에 있어서, A영역에 해당하는 노볼락수지에 함유된 m-크레솔과 p-크레솔의 비가 10:0-2:8이고, 그밖에, C영역에 해당하는 노볼락수지에 함유된 m-크레솔과 p-크레솔의 비가 10:0-4:6인 것을 특징으로하는 포지티브 감광성 내식막용 노볼락 수지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870012598A 1986-11-08 1987-11-09 포지티브 감광성 내식막용 노볼락수지 KR960006405B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP26640286 1986-11-08
JP86-266402 1986-11-08
JP61-266402 1986-11-08
JP062-220664 1987-09-02
JP62220664A JP2590342B2 (ja) 1986-11-08 1987-09-02 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
JP87-220664 1987-09-02

Publications (2)

Publication Number Publication Date
KR890005563A true KR890005563A (ko) 1989-05-15
KR960006405B1 KR960006405B1 (ko) 1996-05-15

Family

ID=26523847

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012598A KR960006405B1 (ko) 1986-11-08 1987-11-09 포지티브 감광성 내식막용 노볼락수지

Country Status (6)

Country Link
US (1) US4812551A (ko)
EP (1) EP0271199B1 (ko)
JP (1) JP2590342B2 (ko)
KR (1) KR960006405B1 (ko)
CA (1) CA1287438C (ko)
DE (1) DE3781650T2 (ko)

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Publication number Priority date Publication date Assignee Title
KR100709520B1 (ko) * 2000-02-29 2007-04-20 도오꾜오까고오교 가부시끼가이샤 페놀 노볼락 수지, 그것의 합성 방법, 및 이것을 사용한포지티브형 포토레지스트 조성물

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KR101400186B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자

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Publication number Priority date Publication date Assignee Title
KR100709520B1 (ko) * 2000-02-29 2007-04-20 도오꾜오까고오교 가부시끼가이샤 페놀 노볼락 수지, 그것의 합성 방법, 및 이것을 사용한포지티브형 포토레지스트 조성물

Also Published As

Publication number Publication date
EP0271199B1 (en) 1992-09-09
JPH01105243A (ja) 1989-04-21
EP0271199A3 (en) 1989-10-18
CA1287438C (en) 1991-08-06
DE3781650T2 (de) 1993-04-15
US4812551A (en) 1989-03-14
DE3781650D1 (de) 1992-10-15
EP0271199A2 (en) 1988-06-15
JP2590342B2 (ja) 1997-03-12
KR960006405B1 (ko) 1996-05-15

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