CN1306337C - 正性敏射线的树脂组合物 - Google Patents
正性敏射线的树脂组合物 Download PDFInfo
- Publication number
- CN1306337C CN1306337C CNB998027987A CN99802798A CN1306337C CN 1306337 C CN1306337 C CN 1306337C CN B998027987 A CNB998027987 A CN B998027987A CN 99802798 A CN99802798 A CN 99802798A CN 1306337 C CN1306337 C CN 1306337C
- Authority
- CN
- China
- Prior art keywords
- hydroxyphenyl
- phenol
- methyl
- novolac resin
- molecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
敏射线酚醛清漆树脂 | 低分子量酚化合物 | 敏感性(mJ/cm2) | 分辨性(μm) | 图形形状 | 浮渣情况 | 密纹特性 | |||
名称 | 添加剂量 | 名称 | 添加剂量 | ||||||
实施例1 | C | 90 | D-1 | 10 | 620 | 0.55 | ○ | ○ | ○ |
实施例2 | C | 90 | D-2 | 10 | 585 | 0.55 | ○ | ○ | ○ |
比较实施例1 | C | 100 | - | - | 920 | 0.80 | × | × | × |
比较实施例2 | E | 100 | - | - | 730 | 0.60 | ○ | × | × |
比较实施例3 | E | 90 | D-1 | 10 | 530 | 0.70 | △ | × | × |
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35158198 | 1998-12-10 | ||
JP351581/1998 | 1998-12-10 | ||
JP351581/98 | 1998-12-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1290357A CN1290357A (zh) | 2001-04-04 |
CN1306337C true CN1306337C (zh) | 2007-03-21 |
Family
ID=18418248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998027987A Expired - Lifetime CN1306337C (zh) | 1998-12-10 | 1999-12-01 | 正性敏射线的树脂组合物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6475693B1 (zh) |
EP (1) | EP1055969A4 (zh) |
KR (1) | KR100690227B1 (zh) |
CN (1) | CN1306337C (zh) |
TW (1) | TWI224714B (zh) |
WO (1) | WO2000034829A1 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7192681B2 (en) * | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JP2003195495A (ja) * | 2001-12-26 | 2003-07-09 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
KR100783603B1 (ko) * | 2002-01-05 | 2007-12-07 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 사용한 패턴의 형성방법 |
JP3894477B2 (ja) * | 2002-02-27 | 2007-03-22 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
US6790582B1 (en) * | 2003-04-01 | 2004-09-14 | Clariant Finance Bvi Limited | Photoresist compositions |
US6905809B2 (en) * | 2003-04-01 | 2005-06-14 | Clariant Finance (Bvi) Limited | Photoresist compositions |
JP4112416B2 (ja) * | 2003-04-04 | 2008-07-02 | 東京応化工業株式会社 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP2004347682A (ja) * | 2003-05-20 | 2004-12-09 | Tokyo Ohka Kogyo Co Ltd | システムlcd製造用ポジ型ホトレジスト組成物及びレジストパターン形成方法 |
WO2005001576A1 (ja) * | 2003-06-30 | 2005-01-06 | Think Laboratory Co., Ltd. | ポジ型感光性組成物 |
US20050033811A1 (en) | 2003-08-07 | 2005-02-10 | International Business Machines Corporation | Collaborative email |
JP3977307B2 (ja) * | 2003-09-18 | 2007-09-19 | 東京応化工業株式会社 | ポジ型フォトレジスト組成物及びレジストパターン形成方法 |
JP4152852B2 (ja) * | 2003-09-30 | 2008-09-17 | 東京応化工業株式会社 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP4440600B2 (ja) * | 2003-10-31 | 2010-03-24 | Azエレクトロニックマテリアルズ株式会社 | 厚膜および超厚膜対応化学増幅型感光性樹脂組成物 |
US8353896B2 (en) | 2004-04-19 | 2013-01-15 | The Invention Science Fund I, Llc | Controllable release nasal system |
WO2005116767A1 (ja) * | 2004-05-27 | 2005-12-08 | Think Laboratory Co., Ltd. | ポジ型感光性組成物 |
JP2006154477A (ja) * | 2004-11-30 | 2006-06-15 | Think Laboratory Co Ltd | ポジ型感光性組成物 |
JP5057530B2 (ja) * | 2006-08-04 | 2012-10-24 | ドンウー ファイン−ケム カンパニー リミテッド | ポジティブ型のフォトレジスト組成物およびこれのパターン形成方法 |
US7747903B2 (en) * | 2007-07-09 | 2010-06-29 | Micron Technology, Inc. | Error correction for memory |
KR101432503B1 (ko) | 2008-02-26 | 2014-08-22 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법 |
KR20120107653A (ko) | 2011-03-22 | 2012-10-04 | 삼성디스플레이 주식회사 | 감광성 수지 조성물 및 이를 이용한 패턴의 형성 방법 |
US10723684B2 (en) * | 2014-05-27 | 2020-07-28 | University Of Delaware | Bisphenol alternative derived from renewable substituted phenolics and their industrial application |
JP6621233B2 (ja) * | 2014-07-25 | 2019-12-18 | 東京応化工業株式会社 | 有機el表示素子における絶縁膜形成用の感光性樹脂組成物 |
TWI678596B (zh) * | 2018-09-13 | 2019-12-01 | 新應材股份有限公司 | 正型光阻組成物及圖案化聚醯亞胺層之形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422221A (en) * | 1993-02-17 | 1995-06-06 | Shin-Etsu Chemical Co., Ltd. | Resist compositions |
US5629128A (en) * | 1994-10-31 | 1997-05-13 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
JPH09160247A (ja) * | 1995-08-01 | 1997-06-20 | Shin Etsu Chem Co Ltd | 化学増幅ポジ型レジスト材料 |
JPH1069077A (ja) * | 1996-08-27 | 1998-03-10 | Shin Etsu Chem Co Ltd | ポジ型レジスト組成物 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666473A (en) | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPS5280022A (en) | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
DE2847878A1 (de) | 1978-11-04 | 1980-05-22 | Hoechst Ag | Lichtempfindliches gemisch |
JPS61205933A (ja) | 1985-03-08 | 1986-09-12 | Konishiroku Photo Ind Co Ltd | 感光性平版印刷版 |
JPS62160444A (ja) * | 1986-01-09 | 1987-07-16 | Mitsubishi Petrochem Co Ltd | ポジ型レジスト樹脂 |
JP2590342B2 (ja) | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
JP3258384B2 (ja) * | 1992-08-14 | 2002-02-18 | ジェイエスアール株式会社 | ポジ型感放射線性樹脂組成物 |
JP3287234B2 (ja) * | 1996-09-19 | 2002-06-04 | 信越化学工業株式会社 | リフトオフ法用ポジ型レジスト組成物及びパターン形成方法 |
JPH10153857A (ja) * | 1996-11-22 | 1998-06-09 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
JP4068253B2 (ja) * | 1999-01-27 | 2008-03-26 | Azエレクトロニックマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
-
1999
- 1999-12-01 EP EP99957401A patent/EP1055969A4/en not_active Withdrawn
- 1999-12-01 CN CNB998027987A patent/CN1306337C/zh not_active Expired - Lifetime
- 1999-12-01 US US09/622,179 patent/US6475693B1/en not_active Expired - Lifetime
- 1999-12-01 KR KR1020007008523A patent/KR100690227B1/ko active IP Right Grant
- 1999-12-01 WO PCT/JP1999/006729 patent/WO2000034829A1/ja not_active Application Discontinuation
- 1999-12-06 TW TW088121308A patent/TWI224714B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422221A (en) * | 1993-02-17 | 1995-06-06 | Shin-Etsu Chemical Co., Ltd. | Resist compositions |
US5629128A (en) * | 1994-10-31 | 1997-05-13 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
JPH09160247A (ja) * | 1995-08-01 | 1997-06-20 | Shin Etsu Chem Co Ltd | 化学増幅ポジ型レジスト材料 |
JPH1069077A (ja) * | 1996-08-27 | 1998-03-10 | Shin Etsu Chem Co Ltd | ポジ型レジスト組成物 |
Also Published As
Publication number | Publication date |
---|---|
TWI224714B (en) | 2004-12-01 |
CN1290357A (zh) | 2001-04-04 |
KR20010040651A (ko) | 2001-05-15 |
KR100690227B1 (ko) | 2007-03-20 |
EP1055969A1 (en) | 2000-11-29 |
EP1055969A4 (en) | 2002-01-16 |
WO2000034829A1 (fr) | 2000-06-15 |
US6475693B1 (en) | 2002-11-05 |
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