CN1286764A - 极微小光致抗蚀图形的形成方法 - Google Patents
极微小光致抗蚀图形的形成方法 Download PDFInfo
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- CN1286764A CN1286764A CN99801694A CN99801694A CN1286764A CN 1286764 A CN1286764 A CN 1286764A CN 99801694 A CN99801694 A CN 99801694A CN 99801694 A CN99801694 A CN 99801694A CN 1286764 A CN1286764 A CN 1286764A
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- Prior art keywords
- weight
- alkali
- photosensitizer
- developer
- resist pattern
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000203 mixture Substances 0.000 claims abstract description 48
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 229920003986 novolac Polymers 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 5
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229910001853 inorganic hydroxide Inorganic materials 0.000 claims description 4
- PHDAADUELLBUCA-UHFFFAOYSA-N OOO.C[N+](C)(C)C Chemical compound OOO.C[N+](C)(C)C PHDAADUELLBUCA-UHFFFAOYSA-N 0.000 claims description 3
- ICJIEWHCPMLDBW-UHFFFAOYSA-N OOO.C[N+](C)(C)CCO Chemical compound OOO.C[N+](C)(C)CCO ICJIEWHCPMLDBW-UHFFFAOYSA-N 0.000 claims description 3
- LVHFFCVSWIOHPR-UHFFFAOYSA-N O(O)O.C(C)[N+](CC)(CC)CC Chemical compound O(O)O.C(C)[N+](CC)(CC)CC LVHFFCVSWIOHPR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 abstract description 27
- 230000035945 sensitivity Effects 0.000 abstract description 22
- 239000003513 alkali Substances 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 14
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 150000008044 alkali metal hydroxides Chemical group 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
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- 230000007797 corrosion Effects 0.000 description 46
- 239000000243 solution Substances 0.000 description 41
- 238000012360 testing method Methods 0.000 description 17
- 238000011161 development Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
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- 238000002360 preparation method Methods 0.000 description 11
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
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- MBGGFXOXUIDRJD-UHFFFAOYSA-N 4-Butoxyphenol Chemical compound CCCCOC1=CC=C(O)C=C1 MBGGFXOXUIDRJD-UHFFFAOYSA-N 0.000 description 2
- OSDLLIBGSJNGJE-UHFFFAOYSA-N 4-chloro-3,5-dimethylphenol Chemical compound CC1=CC(O)=CC(C)=C1Cl OSDLLIBGSJNGJE-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UWIULCYKVGIOPW-UHFFFAOYSA-N Glycolone Natural products CCOC1=C(CC=CC)C(=O)N(C)c2c(O)cccc12 UWIULCYKVGIOPW-UHFFFAOYSA-N 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
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- 239000007767 bonding agent Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
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- 238000007796 conventional method Methods 0.000 description 2
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- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 2
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- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP275933/1998 | 1998-09-29 | ||
JP27593398A JP3968177B2 (ja) | 1998-09-29 | 1998-09-29 | 微細レジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1286764A true CN1286764A (zh) | 2001-03-07 |
CN1169022C CN1169022C (zh) | 2004-09-29 |
Family
ID=17562459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998016942A Expired - Lifetime CN1169022C (zh) | 1998-09-29 | 1999-09-02 | 极微小光致抗蚀图形的形成方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6514676B1 (zh) |
EP (1) | EP1046954A4 (zh) |
JP (1) | JP3968177B2 (zh) |
KR (1) | KR100585574B1 (zh) |
CN (1) | CN1169022C (zh) |
TW (1) | TW459163B (zh) |
WO (1) | WO2000019274A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365509C (zh) * | 2003-08-22 | 2008-01-30 | 奇美实业股份有限公司 | 正型感光性树脂组成物 |
CN100580561C (zh) * | 2003-07-16 | 2010-01-13 | 三菱瓦斯化学株式会社 | 防蚀显影组合物 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3968177B2 (ja) * | 1998-09-29 | 2007-08-29 | Azエレクトロニックマテリアルズ株式会社 | 微細レジストパターン形成方法 |
JP2002341525A (ja) | 2001-05-14 | 2002-11-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト転写材料およびそれを用いた基板表面の加工方法 |
WO2005024959A1 (en) * | 2003-09-09 | 2005-03-17 | Csg Solar, Ag | Adjustment of masks by re-flow |
US8892112B2 (en) | 2011-07-21 | 2014-11-18 | At&T Mobility Ii Llc | Selection of a radio access bearer resource based on radio access bearer resource historical information |
US8326319B2 (en) | 2009-01-23 | 2012-12-04 | At&T Mobility Ii Llc | Compensation of propagation delays of wireless signals |
US9008684B2 (en) | 2010-02-25 | 2015-04-14 | At&T Mobility Ii Llc | Sharing timed fingerprint location information |
US8254959B2 (en) * | 2010-02-25 | 2012-08-28 | At&T Mobility Ii Llc | Timed fingerprint locating for idle-state user equipment in wireless networks |
US8224349B2 (en) | 2010-02-25 | 2012-07-17 | At&T Mobility Ii Llc | Timed fingerprint locating in wireless networks |
US9053513B2 (en) | 2010-02-25 | 2015-06-09 | At&T Mobility Ii Llc | Fraud analysis for a location aware transaction |
US9196157B2 (en) | 2010-02-25 | 2015-11-24 | AT&T Mobolity II LLC | Transportation analytics employing timed fingerprint location information |
US8447328B2 (en) | 2010-08-27 | 2013-05-21 | At&T Mobility Ii Llc | Location estimation of a mobile device in a UMTS network |
US9009629B2 (en) | 2010-12-01 | 2015-04-14 | At&T Mobility Ii Llc | Motion-based user interface feature subsets |
US8509806B2 (en) | 2010-12-14 | 2013-08-13 | At&T Intellectual Property I, L.P. | Classifying the position of a wireless device |
US8612410B2 (en) | 2011-06-30 | 2013-12-17 | At&T Mobility Ii Llc | Dynamic content selection through timed fingerprint location data |
US9462497B2 (en) | 2011-07-01 | 2016-10-04 | At&T Mobility Ii Llc | Subscriber data analysis and graphical rendering |
US9519043B2 (en) | 2011-07-21 | 2016-12-13 | At&T Mobility Ii Llc | Estimating network based locating error in wireless networks |
US8761799B2 (en) | 2011-07-21 | 2014-06-24 | At&T Mobility Ii Llc | Location analytics employing timed fingerprint location information |
US8897802B2 (en) | 2011-07-21 | 2014-11-25 | At&T Mobility Ii Llc | Selection of a radio access technology resource based on radio access technology resource historical information |
US8923134B2 (en) | 2011-08-29 | 2014-12-30 | At&T Mobility Ii Llc | Prioritizing network failure tickets using mobile location data |
US8666390B2 (en) | 2011-08-29 | 2014-03-04 | At&T Mobility Ii Llc | Ticketing mobile call failures based on geolocated event data |
US8762048B2 (en) | 2011-10-28 | 2014-06-24 | At&T Mobility Ii Llc | Automatic travel time and routing determinations in a wireless network |
US8909247B2 (en) | 2011-11-08 | 2014-12-09 | At&T Mobility Ii Llc | Location based sharing of a network access credential |
US9026133B2 (en) | 2011-11-28 | 2015-05-05 | At&T Mobility Ii Llc | Handset agent calibration for timing based locating systems |
US8970432B2 (en) | 2011-11-28 | 2015-03-03 | At&T Mobility Ii Llc | Femtocell calibration for timing based locating systems |
US8925104B2 (en) | 2012-04-13 | 2014-12-30 | At&T Mobility Ii Llc | Event driven permissive sharing of information |
US8929827B2 (en) | 2012-06-04 | 2015-01-06 | At&T Mobility Ii Llc | Adaptive calibration of measurements for a wireless radio network |
US9094929B2 (en) | 2012-06-12 | 2015-07-28 | At&T Mobility Ii Llc | Event tagging for mobile networks |
US9326263B2 (en) | 2012-06-13 | 2016-04-26 | At&T Mobility Ii Llc | Site location determination using crowd sourced propagation delay and location data |
US9046592B2 (en) | 2012-06-13 | 2015-06-02 | At&T Mobility Ii Llc | Timed fingerprint locating at user equipment |
US8938258B2 (en) | 2012-06-14 | 2015-01-20 | At&T Mobility Ii Llc | Reference based location information for a wireless network |
US8897805B2 (en) | 2012-06-15 | 2014-11-25 | At&T Intellectual Property I, L.P. | Geographic redundancy determination for time based location information in a wireless radio network |
US9408174B2 (en) | 2012-06-19 | 2016-08-02 | At&T Mobility Ii Llc | Facilitation of timed fingerprint mobile device locating |
US8892054B2 (en) | 2012-07-17 | 2014-11-18 | At&T Mobility Ii Llc | Facilitation of delay error correction in timing-based location systems |
US9351223B2 (en) | 2012-07-25 | 2016-05-24 | At&T Mobility Ii Llc | Assignment of hierarchical cell structures employing geolocation techniques |
JP6323337B2 (ja) | 2012-12-12 | 2018-05-16 | 日立化成株式会社 | 感光性樹脂組成物及びこれを用いた感光性フィルム |
US9351111B1 (en) | 2015-03-06 | 2016-05-24 | At&T Mobility Ii Llc | Access to mobile location related information |
US10516972B1 (en) | 2018-06-01 | 2019-12-24 | At&T Intellectual Property I, L.P. | Employing an alternate identifier for subscription access to mobile location information |
Family Cites Families (15)
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US3666473A (en) | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPS5280022A (en) | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
US4173470A (en) | 1977-11-09 | 1979-11-06 | Bell Telephone Laboratories, Incorporated | Novolak photoresist composition and preparation thereof |
JPH063549B2 (ja) | 1984-12-25 | 1994-01-12 | 株式会社東芝 | ポジ型フォトレジスト現像液組成物 |
EP0227487B1 (en) * | 1985-12-27 | 1992-07-15 | Japan Synthetic Rubber Co., Ltd. | Positive type radiation-sensitive resin composition |
US4912018A (en) * | 1986-02-24 | 1990-03-27 | Hoechst Celanese Corporation | High resolution photoresist based on imide containing polymers |
EP0298393A3 (de) * | 1987-07-10 | 1990-06-20 | Hoechst Celanese Corporation | Verfahren zur Herstellung negativer Bilder aus einem positiv arbeitenden Photoresist mit einem Gehalt an Curcumin und lichtemfindlichen Gemisch enthaltend Curcumin |
US5024921A (en) * | 1987-11-23 | 1991-06-18 | Ocg Microelectronic Materials, Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin used in a method of forming a positive photoresist image |
US5175078A (en) * | 1988-10-20 | 1992-12-29 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
KR950011927B1 (ko) * | 1989-12-07 | 1995-10-12 | 가부시끼가이샤 도시바 | 감광성 조성물 및 수지봉지형 반도체장치 |
JP2626363B2 (ja) * | 1991-11-05 | 1997-07-02 | 東レ株式会社 | 電子線感応組成物およびそれを用いるパターン形成方法 |
JP2914172B2 (ja) * | 1993-04-28 | 1999-06-28 | 東レ株式会社 | ポジ型電子線レジスト組成物およびこれを用いた微細パターン形成方法 |
WO1994025904A1 (en) | 1993-04-28 | 1994-11-10 | Toray Industries, Inc. | Positive electron-beam resist composition and developer for positive electron-beam resist |
US5645970A (en) * | 1995-10-25 | 1997-07-08 | Industrial Technology Research Institute | Weak base developable positive photoresist composition containing quinonediazide compound |
JP3968177B2 (ja) * | 1998-09-29 | 2007-08-29 | Azエレクトロニックマテリアルズ株式会社 | 微細レジストパターン形成方法 |
-
1998
- 1998-09-29 JP JP27593398A patent/JP3968177B2/ja not_active Expired - Lifetime
-
1999
- 1999-09-02 CN CNB998016942A patent/CN1169022C/zh not_active Expired - Lifetime
- 1999-09-02 US US09/555,393 patent/US6514676B1/en not_active Expired - Fee Related
- 1999-09-02 KR KR1020007005746A patent/KR100585574B1/ko not_active IP Right Cessation
- 1999-09-02 EP EP99940623A patent/EP1046954A4/en not_active Withdrawn
- 1999-09-02 WO PCT/JP1999/004759 patent/WO2000019274A1/ja active IP Right Grant
- 1999-09-27 TW TW088116502A patent/TW459163B/zh not_active IP Right Cessation
-
2002
- 2002-12-18 US US10/323,119 patent/US6933100B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100580561C (zh) * | 2003-07-16 | 2010-01-13 | 三菱瓦斯化学株式会社 | 防蚀显影组合物 |
CN100365509C (zh) * | 2003-08-22 | 2008-01-30 | 奇美实业股份有限公司 | 正型感光性树脂组成物 |
Also Published As
Publication number | Publication date |
---|---|
US6933100B2 (en) | 2005-08-23 |
EP1046954A4 (en) | 2003-03-26 |
KR100585574B1 (ko) | 2006-06-02 |
US20030108822A1 (en) | 2003-06-12 |
WO2000019274A1 (fr) | 2000-04-06 |
JP3968177B2 (ja) | 2007-08-29 |
EP1046954A1 (en) | 2000-10-25 |
JP2000105466A (ja) | 2000-04-11 |
TW459163B (en) | 2001-10-11 |
KR20010032504A (ko) | 2001-04-25 |
CN1169022C (zh) | 2004-09-29 |
US6514676B1 (en) | 2003-02-04 |
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