KR960034162A - 테트라페놀 화합물 및 이의 제조방법 - Google Patents

테트라페놀 화합물 및 이의 제조방법 Download PDF

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KR960034162A
KR960034162A KR1019960005887A KR19960005887A KR960034162A KR 960034162 A KR960034162 A KR 960034162A KR 1019960005887 A KR1019960005887 A KR 1019960005887A KR 19960005887 A KR19960005887 A KR 19960005887A KR 960034162 A KR960034162 A KR 960034162A
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South Korea
Prior art keywords
sulfonyl
naphthoquinonediazide
hydrogen
novolak resin
compound
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KR1019960005887A
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English (en)
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KR100395581B1 (ko
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고지 이치카와
하루요시 오사키
쥰 도미오카
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고사이 아키오
스미토모가가쿠고교 가부시키가이샤
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Application filed by 고사이 아키오, 스미토모가가쿠고교 가부시키가이샤 filed Critical 고사이 아키오
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C245/00—Compounds containing chains of at least two nitrogen atoms with at least one nitrogen-to-nitrogen multiple bond
    • C07C245/02—Azo compounds, i.e. compounds having the free valencies of —N=N— groups attached to different atoms, e.g. diazohydroxides
    • C07C245/06—Azo compounds, i.e. compounds having the free valencies of —N=N— groups attached to different atoms, e.g. diazohydroxides with nitrogen atoms of azo groups bound to carbon atoms of six-membered aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • C07C309/45—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
    • C07C309/52—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by doubly-bound oxygen atoms
    • C07C309/53—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by doubly-bound oxygen atoms the carbon skeleton containing carbon atoms of quinone rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)

Abstract

본 요약은 일반식(Ⅰ)의 화합물 및 이의 제조방법에 관한 것이고, 본 발명의 화합물은 탁월한 특성을 나타내는 양성 내식막용 감광체로서 사용할 수 있다;
상기 식에서 R1, R2, R3및 R4는 소수, 1,2-나프토퀴논디아지드-4-설포닐 또는 1,2-나프토퀴논다아지드-5-설포닐이다.

Description

테트라페놀 화합물 및 이의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 일반식(Ⅰ)의 테트라페놀 화합물.
    상기 식에서, R1, R2, R3및 R4는 서로 독립적으로 수소, 1,2-나프토퀴논디아지드-4-설포닌 또는 1,2-나프토퀴논디아지드-5-설포닐이다.
  2. 제1항에 있어서, R1, R2, R3및 R4가 모두 수소인 화합물.
  3. 제1항에 있어서, R1, R2, R3및 R4중의 하나 이상이 1,2-나프토퀴논디아지드-4-설포닐 또느 1,2-나프토퀴논디아지드-5-설포닐인 화합물.
  4. 4,4´-메틸렌비스(2-하이드록시메틸-3,6-디메틸페놀)을 p-크레솔과 반응시킴을 포함하여, 제1항의 화합물을 제조하는 방법.
  5. 4,4´-메틸렌비스(2-[2-하이드록시-5-메틸페놀)을 3,6-디메틸페놀]을 1,2-나프토퀴논디아지드-4-설포닐 할라이드 또는 1,2-나프토퀴논디아지드-5-설포닐 할라이드와 반응시킴을 포함하여, 제3항의 화합물을 제조하는 방법.
  6. 일반식(Ⅰ)의 테트라페놀 화합물을 포함하는 감광제.
    상기 식에서, R1, R2, R3및 R4중의 하나는 1,2-나프토퀴논디아지-4-설포닐 또는 1,2-나프토퀴논디아지-5-설포닐이고, 나머지는 서로 독립적으로 수소, 1,2-나프토퀴논디아지-4-설포닐 또는 1,2-나프토퀴논디아지-5-설포닐이다.
  7. 알칼리 가용성 노볼락 수지와 제6항의 감광제를 포함하는 감광성 수지 조성물.
  8. 제7항에 있어서, 알칼리 가용성 노볼락 수지가 페놀 화합물과 알데히드와의 축합물이고, 겔 투과 크로마토그래피의 패턴에서 스티렌으로 전환시 분자량이 900 이하인 이의 부분에 대한 면적율이 미반응 페놀 화합물에 대한 패턴의 면적을 제외한 패턴의 전체 면적을 기준으로 하여 25% 이하인 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960005887A 1995-03-08 1996-03-07 테트라페놀화합물및이의제조방법 KR100395581B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07048219A JP3139319B2 (ja) 1995-03-08 1995-03-08 テトラフェノール系化合物、その製法および用途
JP95-048219 1995-03-08

Publications (2)

Publication Number Publication Date
KR960034162A true KR960034162A (ko) 1996-10-22
KR100395581B1 KR100395581B1 (ko) 2003-11-28

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KR1019960005887A KR100395581B1 (ko) 1995-03-08 1996-03-07 테트라페놀화합물및이의제조방법

Country Status (6)

Country Link
US (1) US5726217A (ko)
EP (1) EP0731074B1 (ko)
JP (1) JP3139319B2 (ko)
KR (1) KR100395581B1 (ko)
DE (1) DE69604314T2 (ko)
SG (1) SG81886A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0781424B1 (de) * 1994-09-12 1998-11-18 Siemens Aktiengesellschaft Photolithographische strukturerzeugung
JP3600713B2 (ja) * 1997-08-06 2004-12-15 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3729641B2 (ja) 1998-05-29 2005-12-21 東京応化工業株式会社 ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP3369471B2 (ja) 1998-05-29 2003-01-20 東京応化工業株式会社 ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP3688469B2 (ja) 1998-06-04 2005-08-31 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いたレジストパターンの形成方法
US6387982B1 (en) 1998-11-23 2002-05-14 Dentsply Detrey G.M.B.H. Self etching adhesive primer composition and polymerizable surfactants
JP3499165B2 (ja) 1999-09-27 2004-02-23 東京応化工業株式会社 ポジ型ホトレジスト組成物、感光性膜付基板、およびレジストパターンの形成方法
JP4179579B2 (ja) 2000-05-08 2008-11-12 東洋合成工業株式会社 １，２−ナフトキノンジアジド系感光剤の製造方法
JP2002035684A (ja) * 2000-07-28 2002-02-05 Clariant (Japan) Kk 保護膜の形成方法
TWI263864B (en) * 2001-01-17 2006-10-11 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition
JP3708049B2 (ja) 2001-12-26 2005-10-19 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2003195495A (ja) 2001-12-26 2003-07-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2552891B2 (ja) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH05204148A (ja) * 1992-01-27 1993-08-13 Sumitomo Chem Co Ltd レジスト組成物の製造方法
US5384228A (en) * 1992-04-14 1995-01-24 Tokyo Ohka Kogyo Co., Ltd. Alkali-developable positive-working photosensitive resin composition
JP3466218B2 (ja) * 1992-06-04 2003-11-10 住友化学工業株式会社 ポジ型レジスト組成物

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Publication number Publication date
EP0731074A3 (en) 1997-01-08
DE69604314D1 (de) 1999-10-28
JP3139319B2 (ja) 2001-02-26
JPH08245461A (ja) 1996-09-24
SG81886A1 (en) 2001-08-21
KR100395581B1 (ko) 2003-11-28
DE69604314T2 (de) 2000-03-02
EP0731074B1 (en) 1999-09-22
US5726217A (en) 1998-03-10
EP0731074A2 (en) 1996-09-11

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