DE3781650D1 - Novolackharz fuer positiv-photolack. - Google Patents

Novolackharz fuer positiv-photolack.

Info

Publication number
DE3781650D1
DE3781650D1 DE8787309646T DE3781650T DE3781650D1 DE 3781650 D1 DE3781650 D1 DE 3781650D1 DE 8787309646 T DE8787309646 T DE 8787309646T DE 3781650 T DE3781650 T DE 3781650T DE 3781650 D1 DE3781650 D1 DE 3781650D1
Authority
DE
Germany
Prior art keywords
novolac resin
positive photo
photo paint
paint
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787309646T
Other languages
English (en)
Other versions
DE3781650T2 (de
Inventor
Fumio Oi
Haruyoshi Osaki
Akihiro Furuta
Yukikazu Uemura
Takao Ninomiya
Yasunori Uetani
Makoto Hanabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of DE3781650D1 publication Critical patent/DE3781650D1/de
Application granted granted Critical
Publication of DE3781650T2 publication Critical patent/DE3781650T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8787309646T 1986-11-08 1987-10-30 Novolackharz fuer positiv-photolack. Expired - Fee Related DE3781650T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26640286 1986-11-08
JP62220664A JP2590342B2 (ja) 1986-11-08 1987-09-02 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
DE3781650D1 true DE3781650D1 (de) 1992-10-15
DE3781650T2 DE3781650T2 (de) 1993-04-15

Family

ID=26523847

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787309646T Expired - Fee Related DE3781650T2 (de) 1986-11-08 1987-10-30 Novolackharz fuer positiv-photolack.

Country Status (6)

Country Link
US (1) US4812551A (de)
EP (1) EP0271199B1 (de)
JP (1) JP2590342B2 (de)
KR (1) KR960006405B1 (de)
CA (1) CA1287438C (de)
DE (1) DE3781650T2 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1279430C (en) * 1985-12-06 1991-01-22 Takashi Kubota High-molecular-weight soluble novolak resin and process for preparation thereof
JP2552891B2 (ja) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
DE3810631A1 (de) * 1988-03-29 1989-10-12 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes aufzeichnungsmaterial mit hohem waermestand
US5861229A (en) * 1988-07-07 1999-01-19 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition comprising a 1,2-quinone diazide compound, an alkali-soluble resin and a polyphenol compound
US5456995A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JP2636348B2 (ja) * 1988-07-20 1997-07-30 住友化学工業株式会社 ポジ型レジスト用組成物
DE3901930A1 (de) * 1989-01-24 1990-07-26 Hoechst Ag Verfahren zur herstellung von novolaken und deren verwendung
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
US5288587A (en) * 1989-09-05 1994-02-22 Sumitomo Chemical Co., Ltd. Radiation-sensitive positive resist composition comprising an o-quinone diazide, an alkali-soluble resin and a polyphenol compound
US5132376A (en) * 1989-09-08 1992-07-21 Ocg Microelectronic Materials, Inc. Process for selective removal of dimeric species from phenolic polymers
US5324620A (en) * 1989-09-08 1994-06-28 Ocg Microeletronic Materials, Inc. Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde
AU6339390A (en) * 1989-09-08 1991-04-08 Olin Hunt Specialty Products Inc. Radiation-sensitive compositions containing fully substituted novolak polymers
US5151339A (en) * 1989-09-08 1992-09-29 Ocg Microelectronic Materials, Inc. Photoresist composition containing diazoquinone photosensitizer and novalak resin characterized by the complete and selective removal of dimeric species from the novolak resin
JP2559145B2 (ja) * 1989-10-09 1996-12-04 三菱電機株式会社 フォトレジスト塗布組成物
JP3063148B2 (ja) * 1989-12-27 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物
JP2566169B2 (ja) * 1989-12-28 1996-12-25 日本ゼオン株式会社 ポジ型レジスト組成物
TW202504B (de) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
JPH03294861A (ja) * 1990-04-13 1991-12-26 Mitsubishi Petrochem Co Ltd ポジ型フォトレジスト組成物
US5145763A (en) * 1990-06-29 1992-09-08 Ocg Microelectronic Materials, Inc. Positive photoresist composition
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH05204144A (ja) * 1991-08-21 1993-08-13 Sumitomo Chem Co Ltd ポジ型レジスト組成物
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US5374693A (en) * 1992-12-29 1994-12-20 Hoechst Celanese Corporation Novolak resin blends for photoresist applications
EP0720052A1 (de) * 1994-12-27 1996-07-03 Mitsubishi Chemical Corporation Fotoempfindliche Zusammensetzung und fotolithographische Druckplatte
JPH0990622A (ja) * 1995-09-22 1997-04-04 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6001949A (en) * 1995-12-13 1999-12-14 Gun Ei Chemical Industry Co., Ltd. Novolak type phenolic resins and methods of manufacturing thereof
JPH09124756A (ja) 1995-10-30 1997-05-13 Gun Ei Chem Ind Co Ltd ノボラック型フェノール樹脂及びその製造方法
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
JP3562673B2 (ja) 1996-01-22 2004-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
TW475099B (en) * 1996-12-18 2002-02-01 Hoechst Celanese Corp Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
US6045966A (en) * 1997-12-15 2000-04-04 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
US6027853A (en) * 1998-01-16 2000-02-22 Olin Microelectronic Chemicals, Inc. Process for preparing a radiation-sensitive composition
WO2000034829A1 (fr) 1998-12-10 2000-06-15 Clariant International Ltd. Composition a base de resine photosensible
JP4068260B2 (ja) * 1999-04-02 2008-03-26 Ａｚエレクトロニックマテリアルズ株式会社 感放射線性樹脂組成物
KR20010112227A (ko) 1999-10-07 2001-12-20 데머 얀, 당코 제니아 떼. 감광성 조성물
KR100709520B1 (ko) * 2000-02-29 2007-04-20 도오꾜오까고오교 가부시끼가이샤 페놀 노볼락 수지, 그것의 합성 방법, 및 이것을 사용한포지티브형 포토레지스트 조성물
JP4213366B2 (ja) * 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
JP4237430B2 (ja) * 2001-09-13 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 エッチング方法及びエッチング保護層形成用組成物
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
CN101107283B (zh) * 2005-01-25 2010-08-18 保土谷化学工业株式会社 酮改性的间苯二酚-甲醛树脂
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
EP2532710B1 (de) * 2010-02-03 2018-08-22 DIC Corporation Phenolharzzusammensetzung, härtbare harzzusammensetzung, gehärtete produkte daraus und gedruckte leiterplatte
KR101400186B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US4173470A (en) * 1977-11-09 1979-11-06 Bell Telephone Laboratories, Incorporated Novolak photoresist composition and preparation thereof
DE3344202A1 (de) * 1983-12-07 1985-06-20 Merck Patent Gmbh, 6100 Darmstadt Positiv-fotoresistzusammensetzungen
JPS60189739A (ja) * 1984-03-09 1985-09-27 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPS61205933A (ja) * 1985-03-08 1986-09-12 Konishiroku Photo Ind Co Ltd 感光性平版印刷版
JPS6273255A (ja) * 1985-09-26 1987-04-03 Konishiroku Photo Ind Co Ltd 感光性組成物
JPS62143045A (ja) * 1985-11-29 1987-06-26 Mitsubishi Chem Ind Ltd ポジ型感光性平版印刷版
DE3751743T2 (de) * 1986-03-28 1996-11-14 Japan Synthetic Rubber Co Ltd Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JPH0654389B2 (ja) * 1986-06-23 1994-07-20 日本合成ゴム株式会社 ポジ型感放射線性樹脂組成物

Also Published As

Publication number Publication date
EP0271199B1 (de) 1992-09-09
EP0271199A2 (de) 1988-06-15
CA1287438C (en) 1991-08-06
KR960006405B1 (ko) 1996-05-15
DE3781650T2 (de) 1993-04-15
EP0271199A3 (en) 1989-10-18
US4812551A (en) 1989-03-14
JPH01105243A (ja) 1989-04-21
JP2590342B2 (ja) 1997-03-12
KR890005563A (ko) 1989-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee