DE3576742D1 - Hochkontrastentwicklerverfahren fuer positive photolacke. - Google Patents

Hochkontrastentwicklerverfahren fuer positive photolacke.

Info

Publication number
DE3576742D1
DE3576742D1 DE8585112031T DE3576742T DE3576742D1 DE 3576742 D1 DE3576742 D1 DE 3576742D1 DE 8585112031 T DE8585112031 T DE 8585112031T DE 3576742 T DE3576742 T DE 3576742T DE 3576742 D1 DE3576742 D1 DE 3576742D1
Authority
DE
Germany
Prior art keywords
paints
high contrast
positive photo
developer process
contrast developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585112031T
Other languages
English (en)
Inventor
James Marvin Lewis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Corp
Original Assignee
Huels America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huels America Inc filed Critical Huels America Inc
Application granted granted Critical
Publication of DE3576742D1 publication Critical patent/DE3576742D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
DE8585112031T 1984-10-17 1985-09-23 Hochkontrastentwicklerverfahren fuer positive photolacke. Expired - Lifetime DE3576742D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/661,751 US4613561A (en) 1984-10-17 1984-10-17 Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution

Publications (1)

Publication Number Publication Date
DE3576742D1 true DE3576742D1 (de) 1990-04-26

Family

ID=24654968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585112031T Expired - Lifetime DE3576742D1 (de) 1984-10-17 1985-09-23 Hochkontrastentwicklerverfahren fuer positive photolacke.

Country Status (7)

Country Link
US (1) US4613561A (de)
EP (1) EP0178495B1 (de)
JP (1) JPS6197653A (de)
KR (1) KR890000804B1 (de)
CN (1) CN85107347A (de)
CA (1) CA1261194A (de)
DE (1) DE3576742D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721640B2 (ja) * 1984-11-19 1995-03-08 富士通株式会社 レジスト現像方法
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS622254A (ja) * 1985-06-27 1987-01-08 Fuji Photo Film Co Ltd 感光材料の現像方法
US4822722A (en) * 1985-07-18 1989-04-18 Petrarch Systems, Inc. Process of using high contrast photoresist developer with enhanced sensitivity to form positive resist image
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
US4710449A (en) * 1986-01-29 1987-12-01 Petrarch Systems, Inc. High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants
JPH0638159B2 (ja) * 1986-07-18 1994-05-18 東京応化工業株式会社 ポジ型ホトレジスト用現像液
JPS63158552A (ja) * 1986-12-23 1988-07-01 Fuji Photo Film Co Ltd 平版印刷版の製造方法
JPH01177541A (ja) * 1988-01-07 1989-07-13 Fuji Photo Film Co Ltd 平版印刷版の製造方法
DE4027299A1 (de) * 1990-08-29 1992-03-05 Hoechst Ag Entwicklerzusammensetzung fuer bestrahlte, strahlungsempfindliche, positiv und negativ arbeitende sowie umkehrbare reprographische schichten und verfahren zur entwicklung solcher schichten
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
DE4419166A1 (de) * 1994-06-01 1995-12-07 Hoechst Ag Entwickler für Photoresistschichten
JPH08235645A (ja) * 1995-02-28 1996-09-13 Pioneer Video Corp 光記録媒体用現像方法及び光記録媒体用現像装置
US5811221A (en) * 1997-05-30 1998-09-22 Kodak Polychrome Graphics, Llc Alkaline developing composition and method of use to process lithographic printing plates
US6083662A (en) * 1997-05-30 2000-07-04 Kodak Polychrome Graphics Llc Methods of imaging and printing with a positive-working infrared radiation sensitive printing plate
US6063550A (en) * 1998-04-29 2000-05-16 Morton International, Inc. Aqueous developing solutions for reduced developer residue
JP3328250B2 (ja) * 1998-12-09 2002-09-24 岸本産業株式会社 レジスト残渣除去剤
US7208049B2 (en) 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US7348300B2 (en) 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
JP2001023893A (ja) * 1999-07-12 2001-01-26 Nec Corp フォトレジストパターンの形成方法
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
JP4414758B2 (ja) * 2001-10-03 2010-02-10 エーエスエムエル ホールディング エヌ．ブイ． 表面付近に吐出される液体ジェットの相互混合を緩和するための方法及び装置
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
US6852465B2 (en) * 2003-03-21 2005-02-08 Clariant International Ltd. Photoresist composition for imaging thick films
AU2003286758A1 (en) 2003-07-17 2005-03-07 Honeywell International Inc Planarization films for advanced microelectronic applications and devices and methods of production thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3586504A (en) * 1969-10-24 1971-06-22 Eastman Kodak Co Photoresist developers and methods
US3682641A (en) * 1970-03-23 1972-08-08 Du Pont Photoresist developer extender baths containing polyoxyalkylene ethers and esters and process of use
US3891439A (en) * 1972-11-02 1975-06-24 Polychrome Corp Aqueous developing composition for lithographic diazo printing plates
US3868254A (en) * 1972-11-29 1975-02-25 Gaf Corp Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
US3961101A (en) * 1974-09-16 1976-06-01 Rca Corporation Process for improved development of electron-beam-sensitive resist films
US4359520A (en) * 1977-11-23 1982-11-16 International Business Machines Corporation Enhancement of resist development
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
DE2921142A1 (de) * 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
US4275100A (en) * 1980-01-04 1981-06-23 Rca Corporation Video disc processing
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
US4302348A (en) * 1980-09-23 1981-11-24 The Drackett Company Hard surface cleaning compositions

Also Published As

Publication number Publication date
KR890000804B1 (ko) 1989-04-07
KR860003533A (ko) 1986-05-26
CN85107347A (zh) 1986-08-20
JPH0573227B2 (de) 1993-10-13
US4613561A (en) 1986-09-23
CA1261194A (en) 1989-09-26
JPS6197653A (ja) 1986-05-16
EP0178495A2 (de) 1986-04-23
EP0178495A3 (en) 1986-07-23
EP0178495B1 (de) 1990-03-21

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Legal Events

Date Code Title Description
8380 Miscellaneous part iii

Free format text: DER PATENTINHABER LAUTET RICHTIG: MICROSI, INC. (N.D.GES.D. STAATES DELAWARE), PHOENIX, ARIZ., US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee