KR860003533A - 양성 포토레지스터 현상방법 - Google Patents

양성 포토레지스터 현상방법 Download PDF

Info

Publication number
KR860003533A
KR860003533A KR1019850007629A KR850007629A KR860003533A KR 860003533 A KR860003533 A KR 860003533A KR 1019850007629 A KR1019850007629 A KR 1019850007629A KR 850007629 A KR850007629 A KR 850007629A KR 860003533 A KR860003533 A KR 860003533A
Authority
KR
South Korea
Prior art keywords
surfactant
radical
alkalinity
developing method
film
Prior art date
Application number
KR1019850007629A
Other languages
English (en)
Other versions
KR890000804B1 (ko
Inventor
마빈 루이스 제임스
Original Assignee
로이 에이취. 맷신길
알라이드 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로이 에이취. 맷신길, 알라이드 코오포레이션 filed Critical 로이 에이취. 맷신길
Publication of KR860003533A publication Critical patent/KR860003533A/ko
Application granted granted Critical
Publication of KR890000804B1 publication Critical patent/KR890000804B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Abstract

내용 없음

Description

양성 포토레지스트 현상방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 다음 단계들을 포함하여, 기질에 도포되고 화학방사선에 감광된 양성 포토레지스트 필름을 현상하는 방법. (a) 총중량의 약 0.001-1.0% 정도되는 양의 탄화불소계면활성제 또는 카르복시산염 계면활성제를 포함하는 알카리수용액으로 구성되며 포토레지스트의 현상을 직접 유도하지는 않을 정도로 알카리도가 조절된 예비처리용액에 감광 포토레지스트필름을 접촉시킴. (b) 상기 예비처리 필름을 물로 헹굼. (c) 총중량의 약 0.0001% 이상되는 양의 탄화불소 계면활성제 또는 카르복시산염 계면활성제를 포함하는 알카리 수용액으로 구성되며 pH9이상인 수성 현상액에 물로 헹군 예비처리 필름을 접촉시켜 필름의 감광부분을 용해시킴.
  2. 제1항에 있어서, (a) 단계에서의 예비처리용액의 알카리도가 (c) 단계에서의 현상액의 알카리도의 약 10-75%정도임을 특징으로 하는 현상방법.
  3. 제1항에 있어서, 현상액중의 계면활성제농도가 약 0.001-0.1wt%임을 특징으로 하는 현상방법.
  4. 제1항에 있어서, (a) 단계에서의 예비처리용액의 알카리도가 수산화칼륨의 첨가에 의하여 조절됨을 특징으로, 현상방법.
  5. 제1항에 있어서, (a) 단계에서의 예비처리 용액의 알카리도가 탄산칼륨의 첨가에 의하여 조절됨을 특징으로 하는, 현상방법.
  6. 제1항에 있어서, (a) 및 (c)단계에서 사용되는 계면활성제가 다음 일반식의 탄화불소 계면활성제임을 특징으로 하는 현상방법.
    Rf-Y-(CH2CH2O)mR 식중, R은 수소, 아실(C1-C30)라디칼 또는 알킬(C1-C30)라디칼이고,
    Rf는 일반식 CpF2p+1(P=3-17)의 탄화불소 라디칼이고,
    Y는 -CH2CH2O,SO2NR',SO3,SO2N(R')CH2CO2,CO2및 -CONR'로 구성된 그룹으로부터 선택된 라디칼(단, R'는 수소 또는 알킬(C1-C6)라디칼임)이며, m은 2-26, 바람직하게는 5-26의 정수 임.
  7. 제1항에 있어서, (a) 및 (c)단계에서 사용되는 계면활성제가 다음 일반식의 카르복시산염 계면활성제임을 특징으로하는, 현상방법.
    R-O(CnH2nO)mR1-COOX
    식중, R은 알킬(C6-C18) 라디칼이고,
    R1은 아릴(C1-C3)라디칼이고,
    n은 2-4의 정수이고,
    m은 1-100의 정수이며,
    x는 H+, Na+, K+, Li+, NH4 +디에탄올아민, 트리에탄올아민, Al++, Cu++, Mg++및 Sr++로 구성된 그룹으로 부터 선택된 양이온임.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850007629A 1984-10-17 1985-10-16 양성 포토레지스트 현상방법 KR890000804B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US661.751 1984-10-17
US06/661,751 US4613561A (en) 1984-10-17 1984-10-17 Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
US661751 1991-02-27

Publications (2)

Publication Number Publication Date
KR860003533A true KR860003533A (ko) 1986-05-26
KR890000804B1 KR890000804B1 (ko) 1989-04-07

Family

ID=24654968

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007629A KR890000804B1 (ko) 1984-10-17 1985-10-16 양성 포토레지스트 현상방법

Country Status (7)

Country Link
US (1) US4613561A (ko)
EP (1) EP0178495B1 (ko)
JP (1) JPS6197653A (ko)
KR (1) KR890000804B1 (ko)
CN (1) CN85107347A (ko)
CA (1) CA1261194A (ko)
DE (1) DE3576742D1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010015280A (ko) * 1999-07-12 2001-02-26 가네꼬 히사시 포토레지스트패턴의 형성방법

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721640B2 (ja) * 1984-11-19 1995-03-08 富士通株式会社 レジスト現像方法
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS622254A (ja) * 1985-06-27 1987-01-08 Fuji Photo Film Co Ltd 感光材料の現像方法
US4822722A (en) * 1985-07-18 1989-04-18 Petrarch Systems, Inc. Process of using high contrast photoresist developer with enhanced sensitivity to form positive resist image
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
US4710449A (en) * 1986-01-29 1987-12-01 Petrarch Systems, Inc. High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants
JPH0638159B2 (ja) * 1986-07-18 1994-05-18 東京応化工業株式会社 ポジ型ホトレジスト用現像液
JPS63158552A (ja) * 1986-12-23 1988-07-01 Fuji Photo Film Co Ltd 平版印刷版の製造方法
JPH01177541A (ja) * 1988-01-07 1989-07-13 Fuji Photo Film Co Ltd 平版印刷版の製造方法
DE4027299A1 (de) * 1990-08-29 1992-03-05 Hoechst Ag Entwicklerzusammensetzung fuer bestrahlte, strahlungsempfindliche, positiv und negativ arbeitende sowie umkehrbare reprographische schichten und verfahren zur entwicklung solcher schichten
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
DE4419166A1 (de) * 1994-06-01 1995-12-07 Hoechst Ag Entwickler für Photoresistschichten
JPH08235645A (ja) * 1995-02-28 1996-09-13 Pioneer Video Corp 光記録媒体用現像方法及び光記録媒体用現像装置
US6083662A (en) * 1997-05-30 2000-07-04 Kodak Polychrome Graphics Llc Methods of imaging and printing with a positive-working infrared radiation sensitive printing plate
US5811221A (en) * 1997-05-30 1998-09-22 Kodak Polychrome Graphics, Llc Alkaline developing composition and method of use to process lithographic printing plates
US6063550A (en) * 1998-04-29 2000-05-16 Morton International, Inc. Aqueous developing solutions for reduced developer residue
JP3328250B2 (ja) * 1998-12-09 2002-09-24 岸本産業株式会社 レジスト残渣除去剤
US7348300B2 (en) 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7208049B2 (en) 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
TW558736B (en) * 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
KR100814452B1 (ko) * 2001-10-03 2008-03-17 에이에스엠엘 유에스, 인코포레이티드 표면에 가까운 액체 분배 젯트 사이의 상호 오염을 줄이기 위한 방법과 장치
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
US6852465B2 (en) * 2003-03-21 2005-02-08 Clariant International Ltd. Photoresist composition for imaging thick films
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3586504A (en) * 1969-10-24 1971-06-22 Eastman Kodak Co Photoresist developers and methods
US3682641A (en) * 1970-03-23 1972-08-08 Du Pont Photoresist developer extender baths containing polyoxyalkylene ethers and esters and process of use
US3891439A (en) * 1972-11-02 1975-06-24 Polychrome Corp Aqueous developing composition for lithographic diazo printing plates
US3868254A (en) * 1972-11-29 1975-02-25 Gaf Corp Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants
US3961101A (en) * 1974-09-16 1976-06-01 Rca Corporation Process for improved development of electron-beam-sensitive resist films
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
US4359520A (en) * 1977-11-23 1982-11-16 International Business Machines Corporation Enhancement of resist development
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
DE2921142A1 (de) * 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
US4275100A (en) * 1980-01-04 1981-06-23 Rca Corporation Video disc processing
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
US4302348A (en) * 1980-09-23 1981-11-24 The Drackett Company Hard surface cleaning compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010015280A (ko) * 1999-07-12 2001-02-26 가네꼬 히사시 포토레지스트패턴의 형성방법

Also Published As

Publication number Publication date
KR890000804B1 (ko) 1989-04-07
EP0178495A2 (en) 1986-04-23
EP0178495B1 (en) 1990-03-21
DE3576742D1 (de) 1990-04-26
US4613561A (en) 1986-09-23
JPH0573227B2 (ko) 1993-10-13
CN85107347A (zh) 1986-08-20
EP0178495A3 (en) 1986-07-23
JPS6197653A (ja) 1986-05-16
CA1261194A (en) 1989-09-26

Similar Documents

Publication Publication Date Title
KR860003533A (ko) 양성 포토레지스터 현상방법
KR870007454A (ko) 포토레지스트 현상방법
KR880002051A (ko) 포지티브형 포토레지스트 조성물용 현상액
KR910010242A (ko) 상부층을 갖는 노출된 네가티브-작용성 재생층용 현상 농축액 및 이로부터 제조된 현상액, 및 인쇄 금형의 제조 방법
TW353159B (en) Method of developing positive photoresist and compositions therefor
KR860003532A (ko) 포토레지스터 현상액
FI68473B (fi) Hoegkontrasterande litografisk heltonsframkallare
KR900700922A (ko) 수성 현상용액 및 포지티브-작용성 감광성 내식막 조성물 현상에 있어서의 이의 용도
KR850000704A (ko) 고(高)콘트라스트 포토레지스트 전개제
US3265502A (en) Photographic developing compositions
DE69426780T2 (de) Photographische entwicklerzusammensetzung ohne hydrochinon und verarbeitungsverfahren
EP0136582B1 (en) Developer compositions for silver halide photographic materials
US3811888A (en) Composition for processing silver halide photographic light-sensitive elements
ES515330A0 (es) Un procedimiento para el revelado de capas de reproduccion foto-sensibles expuestas.
US3295975A (en) Black-and-white developer for photographic reversal processes
EP0272686A3 (en) Method for manufacture of lithographic printing plate
US3723117A (en) Method for developing silver halide emulsions
KR900018741A (ko) 할로겐화은 사진 감광 재료의 현상 방법
KR880013043A (ko) 알칸올 아민을 함유한 고콘트라스트 양화 감광성 내식막 현상액
GB255925A (en) Improvements in and relating to the preparation of photographic developers
KR910003148A (ko) 치환 옥시벤젠 화합물 함유 과산화수소 조성물 및 그것으로 인쇄 배선판을 제조하는 방법
KR950023246A (ko) 프린트배선판제조용 현상액 및 프린트배선판의 제조방법
US3549364A (en) Photographic processes and compositions
US3615512A (en) Photographic compositions and process for stabilizing image records with said compositions
AU608127B2 (en) Method of preparing a hologram

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030401

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee