KR860003532A - 포토레지스터 현상액 - Google Patents
포토레지스터 현상액 Download PDFInfo
- Publication number
- KR860003532A KR860003532A KR1019850007593A KR850007593A KR860003532A KR 860003532 A KR860003532 A KR 860003532A KR 1019850007593 A KR1019850007593 A KR 1019850007593A KR 850007593 A KR850007593 A KR 850007593A KR 860003532 A KR860003532 A KR 860003532A
- Authority
- KR
- South Korea
- Prior art keywords
- developer
- content
- alkali metal
- surfactant
- coox
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 9
- 239000004094 surface-active agent Substances 0.000 claims 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 6
- 150000007942 carboxylates Chemical class 0.000 claims 5
- 229910052783 alkali metal Inorganic materials 0.000 claims 4
- 150000001340 alkali metals Chemical class 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 239000002585 base Substances 0.000 claims 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 239000003513 alkali Substances 0.000 claims 1
- -1 quinone diazide sulfonic acid derivative Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 현상후 잔류하는 정규화 필름두께 대 필름에 주어진 노출의 로그값을 프롯트화한 현상액콘트라스트 곡선 A이다.
Claims (10)
- 기질에 부착되어 빛에 감광된, 퀴논 디아지드 술폰산 유도체 및 알카리 용해성 수지로 구성된 양성 포토레지스트 필름을 다음 일반식의 카르복시산염 계면활성제를 현상액 중량의 최소한 0.0001% 이상 포함하는 수성 알칼리 현상액에 필름의 감광부분이 최소한 부분 용해될때까지 접촉시키고 건조시킴을 특징으로하는 양성 포토레지스트의 현상방법.R-O-(C2H4O)n-CH2COOX식중, R은 알킬(C6-C18) 라디칼이고, n은 1-24의 정수이며, X는 H+,Na +또는 K+임.
- 제1항에 있어서, 필름이 자외선에 감광된 것인, 양성 포토레지스트의 현상방법.
- 제1항에 있어서, 카르복시산염 계면활성제의 함량이 현상액 총 중량의 약 0.0005-0.5%인 수성 알카리 현상액에 접촉시키는, 양성 포토레지스트의 현상방법.
- 제1항에 있어서, 카르복시산염 계면활성제의 함량이 현상액 총 중량의 0.001-0.1%인 수성 알칼리현상액에 접촉시키는, 양성 포토레지스트의 현상방법.
- (a) 수성 알카리금속염기, (b) 물 및 (C) 조성물 총 중량의 0.0001wt% 이상의 다음 일반식의 카르복시산염 계면활성제로 구성된 포토레지스트 현상액.R-O-(C2H4O)n-CH2COOX식중, R은 알킬(C6-C18) 라디칼이고, n은 1-24의 정수이며, X는 H+,Na +또는 K+임.
- 제5항에 있어서, 알카리 금속염기는 수산화칼륨 및 수산화 나트륨으로부터 선택되고, 계면활성제의 함량은 약 0.001-0.1wt%인, 포토레지스트 현상액.
- pH가 약 10.5 정도되는 알카리금속 수산화물 수용액 및 약 0.0001-1.0000 wt%의 다음 일반식의 계면활성제로 구성된, 반도체장치 기질에 적용된 감광 수지필름의 현상액 조성물.R-O-(C2H4O)n-CH2COOX식중, R은 알킬(C6-C18) 라디칼이고, n은 1-24의 정수이며, X는 H+,Na +또는 K+임.
- 제7항에 있어서, 알카리금속 수산화물이 수산화칼륨인 현상액 조성물.
- (a) 수성 알카리금속염기, (b) 물 및 (C) 다음 일반식의 카르복시산염 계면활성제로 구성된 감광성 필름 현상액.R-O-(C2H4O)n-CH2COOX식중, R은 알킬(C6-C18) 라디칼이고 n은 1-24의 정수이며, X는 K+,Na +또는 H+임.
- 제9항에 있어서, 알카리금속 염기는 수산화칼륨 및 수산화나트륨으로부터 선택되며 계면활성제의 함량은 약 0.0005-0.5wt%인 현상액.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US660600 | 1984-10-15 | ||
US06/660,600 US4670372A (en) | 1984-10-15 | 1984-10-15 | Process of developing radiation imaged photoresist with alkaline developer solution including a carboxylated surfactant |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860003532A true KR860003532A (ko) | 1986-05-26 |
KR890000803B1 KR890000803B1 (ko) | 1989-04-07 |
Family
ID=24650185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850007593A KR890000803B1 (ko) | 1984-10-15 | 1985-10-15 | 포토레지스트 현상액 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4670372A (ko) |
EP (1) | EP0178496B1 (ko) |
JP (1) | JPS6197652A (ko) |
KR (1) | KR890000803B1 (ko) |
CA (1) | CA1265373A (ko) |
DE (1) | DE3580443D1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100573560B1 (ko) * | 1997-10-30 | 2006-08-30 | 가오가부시끼가이샤 | 레지스트용현상액 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1281578C (en) * | 1985-07-18 | 1991-03-19 | Susan A. Ferguson | High contrast photoresist developer with enhanced sensitivity |
US4822722A (en) * | 1985-07-18 | 1989-04-18 | Petrarch Systems, Inc. | Process of using high contrast photoresist developer with enhanced sensitivity to form positive resist image |
US4797345A (en) * | 1987-07-01 | 1989-01-10 | Olin Hunt Specialty Products, Inc. | Light-sensitive 1,2-naphthoquinone-2-diazide-4-sulfonic acid monoesters of cycloalkyl substituted phenol and their use in light-sensitive mixtures |
DE4027299A1 (de) * | 1990-08-29 | 1992-03-05 | Hoechst Ag | Entwicklerzusammensetzung fuer bestrahlte, strahlungsempfindliche, positiv und negativ arbeitende sowie umkehrbare reprographische schichten und verfahren zur entwicklung solcher schichten |
ATE180583T1 (de) * | 1992-02-07 | 1999-06-15 | Tadahiro Ohmi | Lithographischer entwickler und lithographisches verfahren |
US6007970A (en) * | 1992-02-07 | 1999-12-28 | Canon Kabushiki Kaisha | Lithographic developer containing surfactant |
DE4419166A1 (de) * | 1994-06-01 | 1995-12-07 | Hoechst Ag | Entwickler für Photoresistschichten |
US6136514A (en) | 2000-01-31 | 2000-10-24 | Advanced Micro Devices, Inc. | Resist developer saving system using material to reduce surface tension and wet resist surface |
US20070231741A1 (en) * | 2006-04-04 | 2007-10-04 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
KR101259752B1 (ko) * | 2007-09-13 | 2013-04-30 | 삼성전자주식회사 | 마스크 제조방법 |
WO2010013642A1 (ja) * | 2008-07-29 | 2010-02-04 | 東亞合成株式会社 | 導電性高分子のパターン形成方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE528604A (ko) * | 1953-05-06 | |||
US3639185A (en) * | 1969-06-30 | 1972-02-01 | Ibm | Novel etchant and process for etching thin metal films |
US3586504A (en) * | 1969-10-24 | 1971-06-22 | Eastman Kodak Co | Photoresist developers and methods |
US3682641A (en) * | 1970-03-23 | 1972-08-08 | Du Pont | Photoresist developer extender baths containing polyoxyalkylene ethers and esters and process of use |
US4379827A (en) * | 1971-12-08 | 1983-04-12 | Energy Conversion Devices, Inc. | Imaging structure with tellurium metal film and energy sensitive material thereon |
US4147545A (en) * | 1972-11-02 | 1979-04-03 | Polychrome Corporation | Photolithographic developing composition with organic lithium compound |
US3868254A (en) * | 1972-11-29 | 1975-02-25 | Gaf Corp | Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants |
JPS4988603A (ko) * | 1972-12-29 | 1974-08-24 | ||
US3961100A (en) * | 1974-09-16 | 1976-06-01 | Rca Corporation | Method for developing electron beam sensitive resist films |
US4212935A (en) * | 1978-02-24 | 1980-07-15 | International Business Machines Corporation | Method of modifying the development profile of photoresists |
US4275100A (en) * | 1980-01-04 | 1981-06-23 | Rca Corporation | Video disc processing |
JPS56142528A (en) * | 1980-04-08 | 1981-11-06 | Mitsubishi Chem Ind Ltd | Developing solution for o-quinone diazide photosensitive material |
US4307178A (en) * | 1980-04-30 | 1981-12-22 | International Business Machines Corporation | Plasma develoment of resists |
US4302348A (en) * | 1980-09-23 | 1981-11-24 | The Drackett Company | Hard surface cleaning compositions |
DE3038605A1 (de) * | 1980-10-13 | 1982-06-03 | Hoechst Ag, 6000 Frankfurt | Verfahren zur herstellung von reliefkopien |
JPS57192952A (en) * | 1981-05-25 | 1982-11-27 | Konishiroku Photo Ind Co Ltd | Composition of developing solution |
NL8301168A (nl) * | 1983-03-31 | 1984-10-16 | Chem Y | Reinigingsmiddel op basis van actief chloor en alkali. |
-
1984
- 1984-10-15 US US06/660,600 patent/US4670372A/en not_active Expired - Lifetime
-
1985
- 1985-09-23 EP EP85112032A patent/EP0178496B1/en not_active Expired - Lifetime
- 1985-09-23 DE DE8585112032T patent/DE3580443D1/de not_active Expired - Fee Related
- 1985-10-10 CA CA000492736A patent/CA1265373A/en not_active Expired - Lifetime
- 1985-10-15 JP JP60229775A patent/JPS6197652A/ja active Granted
- 1985-10-15 KR KR1019850007593A patent/KR890000803B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100573560B1 (ko) * | 1997-10-30 | 2006-08-30 | 가오가부시끼가이샤 | 레지스트용현상액 |
Also Published As
Publication number | Publication date |
---|---|
DE3580443D1 (de) | 1990-12-13 |
JPH0562984B2 (ko) | 1993-09-09 |
EP0178496A2 (en) | 1986-04-23 |
JPS6197652A (ja) | 1986-05-16 |
US4670372A (en) | 1987-06-02 |
CA1265373A (en) | 1990-02-06 |
EP0178496B1 (en) | 1990-11-07 |
EP0178496A3 (en) | 1986-07-23 |
KR890000803B1 (ko) | 1989-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR860003533A (ko) | 양성 포토레지스터 현상방법 | |
KR860003532A (ko) | 포토레지스터 현상액 | |
DE3889977D1 (de) | Strahlungsempfindliches Gemisch für lichtempfindliche Beschichtungsmaterialien. | |
KR860004334A (ko) | 방사선감수성 조성물, 이를 사용하여 제조한 기록물질 및 내열성 기록 양각 상의 제조방법 | |
ES8304672A1 (es) | Procedimiento perfeccionado para la preparacion de un material de copias fotosensible. | |
JPS5332035A (en) | Color photographic processing method | |
KR850004661A (ko) | 양성 광저항의 현상액 | |
KR910010242A (ko) | 상부층을 갖는 노출된 네가티브-작용성 재생층용 현상 농축액 및 이로부터 제조된 현상액, 및 인쇄 금형의 제조 방법 | |
KR890004201A (ko) | 포지티브 방사선-감수성 혼합물 | |
DE3852690D1 (de) | Positiv arbeitendes lichtempfindliches Gemisch, enthaltend einen Farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches Aufzeichnungsmaterial. | |
JPS56110927A (en) | Manufacture of silver halide photographic material | |
TW353159B (en) | Method of developing positive photoresist and compositions therefor | |
KR870007454A (ko) | 포토레지스트 현상방법 | |
KR870011503A (ko) | 혼합 에스테르 o-퀴논 감광제 | |
GB1517796A (en) | Method for treating resist films to form relief patterns | |
KR970067574A (ko) | 레지스트 패턴의 형성 방법 | |
FI68473B (fi) | Hoegkontrasterande litografisk heltonsframkallare | |
JPS533216A (en) | Diazo photosensitive composition | |
KR860003538A (ko) | 감광성 내식막의 제조방법 | |
KR900003676A (ko) | 포지티브 작용 포토레지스트용 현상수용액 | |
KR860003536A (ko) | 감광성 내식막 처리액 | |
KR890005571A (ko) | 포지티브 감조사성 혼합물 및 이로부터 생성된 감조사성 기록물질 | |
KR850008058A (ko) | 양성 포토레지스트 전개제 및 전개방법 | |
KR850000704A (ko) | 고(高)콘트라스트 포토레지스트 전개제 | |
US3811888A (en) | Composition for processing silver halide photographic light-sensitive elements |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030401 Year of fee payment: 15 |
|
LAPS | Lapse due to unpaid annual fee |