KR860003538A - 감광성 내식막의 제조방법 - Google Patents

감광성 내식막의 제조방법 Download PDF

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Publication number
KR860003538A
KR860003538A KR1019850007148A KR850007148A KR860003538A KR 860003538 A KR860003538 A KR 860003538A KR 1019850007148 A KR1019850007148 A KR 1019850007148A KR 850007148 A KR850007148 A KR 850007148A KR 860003538 A KR860003538 A KR 860003538A
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KR
South Korea
Prior art keywords
composition
ultraviolet radiation
substrate
aluminum
aqueous solution
Prior art date
Application number
KR1019850007148A
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English (en)
Inventor
디칼로 죤 (외 3)
Original Assignee
마이클 티. 크리민스
아메리칸 훽스트 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 마이클 티. 크리민스, 아메리칸 훽스트 코퍼레이션 filed Critical 마이클 티. 크리민스
Publication of KR860003538A publication Critical patent/KR860003538A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/16—X-ray, infrared, or ultraviolet ray processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)

Abstract

내용 없음

Description

감광성 내식막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 노블락수지와 2,3,4-트리하이드록시 벤조페논의 1,2-나프토퀴논-2-디아지드-4-설폰산에스테르 광증감제로 구성되는 조성물을 기질 상에 코팅시키고; 실질적으로 모두 380nm미만의 파장을 갖는 방사선을 방출하는 광원으로부터의 충분한 자외방사선에 상기 조성물을 상이 형성되도록 노출시켜, 알칼리성 수용액에 실질적으로 가용성인 상형성노출부를 제공하고; 알칼리성 현상 수용액을 사용하여 노출 부위의 조성물을 상기 기질로부터 제거시킴을 특징으로하여 감광성 내식막형을 제조하는 방법.
  2. 제1항에 있어서, 조성물이 추가로 적어도 하나의 용매를 함유하는 방법.
  3. 제1항에 있어서, 조성물이 또한 착색제, 찰흔방지재, 가소제, 접착촉진제, 감광속도증진제, 용매 및 계면활성제로 구성되는 그룹중에서 선택된 하나이상의 첨가제를 함유하는 방법.
  4. 제1항에 있어서, 광증감제가 조성물의 중량을 기준하여 약 1중량%내지 약 25중량%의 양으로 조성물중에 존재하는 방법.
  5. 제1항에 있어서, 노볼락수지가 가조성물중의 고체부분을 기준하여 약 75%내지 약 99%의 양으로 조성물중에 존재하는 방법.
  6. 제2항에 있어서, 용매가 프로필렌글리콜 메틸에테르 아세테이트로 이루어지는 방법.
  7. 제6항에 있어서, 기질이 실리콘, 알미늄, 중합체 수지, 이산화 실리콘, 도핑된 이산화 실리콘, 질화실리콘, 탄탈, 구리, 폴리실리콘, 세라믹 및 알미늄/구리 혼합물로 이루어지는 그룹중에서 선택된 하나이상의 물질로 이루어지는 방법.
  8. 제1항에 있어서, 자외방사선 파장의 범위가 약 295내지 350nm인 방법.
  9. 제1항에 있어서, 자외방사선 파장의 범위가 약 295 내지 약 325nm인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850007148A 1984-10-01 1985-09-27 감광성 내식막의 제조방법 KR860003538A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US655,824 1984-10-01
US06/655,824 US4596763A (en) 1984-10-01 1984-10-01 Positive photoresist processing with mid U-V range exposure

Publications (1)

Publication Number Publication Date
KR860003538A true KR860003538A (ko) 1986-05-26

Family

ID=24630524

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007148A KR860003538A (ko) 1984-10-01 1985-09-27 감광성 내식막의 제조방법

Country Status (5)

Country Link
US (1) US4596763A (ko)
EP (1) EP0176871A3 (ko)
JP (1) JPS6186749A (ko)
KR (1) KR860003538A (ko)
CA (1) CA1263822A (ko)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
JP2614847B2 (ja) * 1986-06-16 1997-05-28 東京応化工業 株式会社 ポジ型感光性組成物
EP0273026B2 (en) * 1986-12-23 2003-08-20 Shipley Company Inc. Solvents for Photoresist compositions
US4826756A (en) * 1987-07-01 1989-05-02 Texas Instruments Incorporated Low temperature deep ultraviolet resist hardening process using zenon chloride laser
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
JPH0781030B2 (ja) * 1987-11-30 1995-08-30 日本合成ゴム株式会社 感放射線性樹脂組成物
US4983492A (en) * 1988-06-06 1991-01-08 Shipley Company Inc. Positive dye photoresist compositions with 2,4-bis(phenylazo)resorcinol
US5075194A (en) * 1990-01-09 1991-12-24 Industrial Technology Research Institute Positive photoresist composition containing 4,4-diester, 4,5-diester, or 5,5-diester of spiroglycol and 1-oxo-2-diazonaphthalene-5-sulfonic acid chloride
KR910015883A (ko) * 1990-02-16 1991-09-30 우 쳉지우 감광성 필름 형성 공중합체 및 그로 구성되는 조성물 및 그로써 네가티브 또는 포지티브 사진 상을 제조하는 방법
WO2012122022A1 (en) 2011-03-10 2012-09-13 3M Innovative Properties Company Filtration media
US8703385B2 (en) 2012-02-10 2014-04-22 3M Innovative Properties Company Photoresist composition
US8715904B2 (en) 2012-04-27 2014-05-06 3M Innovative Properties Company Photocurable composition
EP2883109A1 (en) 2012-08-09 2015-06-17 3M Innovative Properties Company Photocurable compositions
US8883402B2 (en) 2012-08-09 2014-11-11 3M Innovative Properties Company Photocurable compositions
US20220397827A1 (en) * 2021-05-28 2022-12-15 Rohm And Haas Electronic Materials Korea Ltd. Composition for photoresist underlayer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE907739C (de) * 1949-07-23 1954-02-18 Kalle & Co Ag Verfahren zur Herstellung von Kopien, besonders Druckformen, mit Hilfe von Diazoverbindungen und dafuer verwendbares lichtempfindliches Material
DE938233C (de) * 1953-03-11 1956-01-26 Kalle & Co Ag Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
NL247588A (ko) * 1959-01-21
NL131386C (ko) * 1959-08-29
CA774047A (en) * 1963-12-09 1967-12-19 Shipley Company Light-sensitive material and process for the development thereof
US4125650A (en) * 1977-08-08 1978-11-14 International Business Machines Corporation Resist image hardening process
JPS5562444A (en) * 1978-11-02 1980-05-10 Konishiroku Photo Ind Co Ltd Photosensitive composition
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Also Published As

Publication number Publication date
JPS6186749A (ja) 1986-05-02
US4596763A (en) 1986-06-24
CA1263822A (en) 1989-12-12
EP0176871A3 (de) 1987-12-23
EP0176871A2 (de) 1986-04-09

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