KR880002051A - 포지티브형 포토레지스트 조성물용 현상액 - Google Patents

포지티브형 포토레지스트 조성물용 현상액 Download PDF

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Publication number
KR880002051A
KR880002051A KR1019870007790A KR870007790A KR880002051A KR 880002051 A KR880002051 A KR 880002051A KR 1019870007790 A KR1019870007790 A KR 1019870007790A KR 870007790 A KR870007790 A KR 870007790A KR 880002051 A KR880002051 A KR 880002051A
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South Korea
Prior art keywords
photoresist composition
developer
positive photoresist
composition according
water
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KR1019870007790A
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English (en)
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KR900005850B1 (ko
Inventor
하쯔유끼 다나까
요시유끼 사또
히데가쯔 고하라
도시마사 나까야마
Original Assignee
이또오 다께오
도오교오오오까고오교오 가부시기가이샤
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Publication of KR880002051A publication Critical patent/KR880002051A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
    • G03C1/06—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein with non-macromolecular additives
    • G03C1/08—Sensitivity-increasing substances
    • G03C1/10—Organic substances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음

Description

포지티브형 포토레지스트 조성물용 현상액
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 포지티브형 포토레지스트조성물용 수성현상액에 있어서, (a) 용매로서 물; (b) 용매에 용해되는 수용성 유기염기화합물; 및 (c) 일반식
    (식 중 R1은 탄소수 5-15인 알킬기, R2는 수소원자, 또는 탄소수 1-15인 알킬기, n은 5-60의 양의 정수를 나타낸다)으로 표시되는 폴리옥시에틸렌알킬치환페닐에테르 또는 일반식
    (식 중 R3및 R4는 각각 수소원자, 또는 탄소수 1-15인 알킬기이며, R3과 R4는 같아도 되고 달라도 된다, m은 5-60의 양의 정수를 나타낸다)으로 표시되는 폴리옥시에틸렌 알킬치화 또는 치환되지 않은 나프틸에테르 등의 비이온성 계면활성제를 농도 50-5000중량ppm으로 용매에 용해시켜 구성되는 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
  2. 제1항에 있어서, 비이온성 계면활성제는 폴리옥시에틸렌 디알킬페닐 에테르인 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
  3. 제2항에 있어서, 폴리옥시에틸렌 디알킬페닐에테르는 폴리옥시에틸렌디노닐 페닐에테르인 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
  4. 제1항에 있어서, 수용성 유기염기화합물이 수산화 테트라메틸 암모늄이거나 수산화트리메틸 2-히드록시에틸 암모늄인 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
  5. 제1항에 있어서, 비이온성 계면활성제의 농도가 50-5000중량ppm의 범위에 있는 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
  6. 제1항에 있어서, 수용성 유기염기화합물의 농도가 0.5-5중량%의 범위에 있는 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007790A 1986-07-18 1987-07-18 포지티브형(型) 포토레지스트 조성물용(用) 현상액 KR900005850B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61167897A JPH0638159B2 (ja) 1986-07-18 1986-07-18 ポジ型ホトレジスト用現像液
JP167897 1986-07-18

Publications (2)

Publication Number Publication Date
KR880002051A true KR880002051A (ko) 1988-04-28
KR900005850B1 KR900005850B1 (ko) 1990-08-13

Family

ID=15858086

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870007790A KR900005850B1 (ko) 1986-07-18 1987-07-18 포지티브형(型) 포토레지스트 조성물용(用) 현상액

Country Status (5)

Country Link
US (1) US4820621A (ko)
JP (1) JPH0638159B2 (ko)
KR (1) KR900005850B1 (ko)
DE (1) DE3723429A1 (ko)
GB (1) GB2193335B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR100483371B1 (ko) * 2001-10-10 2005-04-15 주식회사 아담스테크놀로지 포토레지스트용 수계 현상액
KR100863732B1 (ko) * 2001-02-21 2008-10-16 후지필름 가부시키가이샤 포지티브 전자선 레지스트 조성물 및 이를 이용한 패턴형성방법

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DE3886971T2 (de) * 1987-04-06 1994-05-19 Hoechst Celanese Corp Hochkontrastreicher Positiv-Photolack-Entwickler mit Alkanolamin.
US5094934A (en) * 1987-04-06 1992-03-10 Morton International, Inc. Method of developing a high contrast, positive photoresist using a developer containing alkanolamine
JP2626992B2 (ja) * 1988-05-10 1997-07-02 富士写真フイルム株式会社 感光性平版印刷版用現像液組成物及び現像方法
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
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KR102378341B1 (ko) * 2015-06-11 2022-03-24 주식회사 이엔에프테크놀로지 포토레지스트 현상액
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KR100483371B1 (ko) * 2001-10-10 2005-04-15 주식회사 아담스테크놀로지 포토레지스트용 수계 현상액

Also Published As

Publication number Publication date
KR900005850B1 (ko) 1990-08-13
GB8715459D0 (en) 1987-08-05
JPS6325650A (ja) 1988-02-03
JPH0638159B2 (ja) 1994-05-18
DE3723429A1 (de) 1988-01-28
GB2193335A (en) 1988-02-03
US4820621B1 (ko) 1991-03-12
US4820621A (en) 1989-04-11
GB2193335B (en) 1990-02-14
DE3723429C2 (ko) 1992-12-17

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