KR880002051A - 포지티브형 포토레지스트 조성물용 현상액 - Google Patents
포지티브형 포토레지스트 조성물용 현상액 Download PDFInfo
- Publication number
- KR880002051A KR880002051A KR1019870007790A KR870007790A KR880002051A KR 880002051 A KR880002051 A KR 880002051A KR 1019870007790 A KR1019870007790 A KR 1019870007790A KR 870007790 A KR870007790 A KR 870007790A KR 880002051 A KR880002051 A KR 880002051A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist composition
- developer
- positive photoresist
- composition according
- water
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
- G03C1/06—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein with non-macromolecular additives
- G03C1/08—Sensitivity-increasing substances
- G03C1/10—Organic substances
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (6)
- 포지티브형 포토레지스트조성물용 수성현상액에 있어서, (a) 용매로서 물; (b) 용매에 용해되는 수용성 유기염기화합물; 및 (c) 일반식(식 중 R1은 탄소수 5-15인 알킬기, R2는 수소원자, 또는 탄소수 1-15인 알킬기, n은 5-60의 양의 정수를 나타낸다)으로 표시되는 폴리옥시에틸렌알킬치환페닐에테르 또는 일반식(식 중 R3및 R4는 각각 수소원자, 또는 탄소수 1-15인 알킬기이며, R3과 R4는 같아도 되고 달라도 된다, m은 5-60의 양의 정수를 나타낸다)으로 표시되는 폴리옥시에틸렌 알킬치화 또는 치환되지 않은 나프틸에테르 등의 비이온성 계면활성제를 농도 50-5000중량ppm으로 용매에 용해시켜 구성되는 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
- 제1항에 있어서, 비이온성 계면활성제는 폴리옥시에틸렌 디알킬페닐 에테르인 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
- 제2항에 있어서, 폴리옥시에틸렌 디알킬페닐에테르는 폴리옥시에틸렌디노닐 페닐에테르인 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
- 제1항에 있어서, 수용성 유기염기화합물이 수산화 테트라메틸 암모늄이거나 수산화트리메틸 2-히드록시에틸 암모늄인 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
- 제1항에 있어서, 비이온성 계면활성제의 농도가 50-5000중량ppm의 범위에 있는 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.
- 제1항에 있어서, 수용성 유기염기화합물의 농도가 0.5-5중량%의 범위에 있는 것을 특징으로 하는 포지티브형 포토레지스트조성물용 현상액.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP167897 | 1986-07-18 | ||
JP61167897A JPH0638159B2 (ja) | 1986-07-18 | 1986-07-18 | ポジ型ホトレジスト用現像液 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880002051A true KR880002051A (ko) | 1988-04-28 |
KR900005850B1 KR900005850B1 (ko) | 1990-08-13 |
Family
ID=15858086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870007790A KR900005850B1 (ko) | 1986-07-18 | 1987-07-18 | 포지티브형(型) 포토레지스트 조성물용(用) 현상액 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4820621A (ko) |
JP (1) | JPH0638159B2 (ko) |
KR (1) | KR900005850B1 (ko) |
DE (1) | DE3723429A1 (ko) |
GB (1) | GB2193335B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100483371B1 (ko) * | 2001-10-10 | 2005-04-15 | 주식회사 아담스테크놀로지 | 포토레지스트용 수계 현상액 |
KR100863732B1 (ko) * | 2001-02-21 | 2008-10-16 | 후지필름 가부시키가이샤 | 포지티브 전자선 레지스트 조성물 및 이를 이용한 패턴형성방법 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
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DE3886971T2 (de) * | 1987-04-06 | 1994-05-19 | Hoechst Celanese Corp | Hochkontrastreicher Positiv-Photolack-Entwickler mit Alkanolamin. |
US5094934A (en) * | 1987-04-06 | 1992-03-10 | Morton International, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
JP2626992B2 (ja) * | 1988-05-10 | 1997-07-02 | 富士写真フイルム株式会社 | 感光性平版印刷版用現像液組成物及び現像方法 |
DE3827567A1 (de) * | 1988-08-13 | 1990-02-22 | Basf Ag | Waessrige entwicklerloesung fuer positiv arbeitende photoresists |
US4997748A (en) * | 1988-08-26 | 1991-03-05 | Tokyo Ohka Kogyo Co., Ltd. | Developer solution for positive-working resist composition |
US5175078A (en) * | 1988-10-20 | 1992-12-29 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
DE3836404A1 (de) * | 1988-10-26 | 1990-05-03 | Hoechst Ag | Entwicklungsloesemittel fuer durch photopolymerisation vernetzbare schichten sowie verfahren zur herstellung von reliefformen |
GB2226150A (en) * | 1988-12-15 | 1990-06-20 | Nordisk Tidningsplat Ab | A developer for use with lithographic printing plates |
DE3941394A1 (de) * | 1989-12-15 | 1991-06-20 | Basf Ag | Waessrige entwicklerloesung und verfahren zum entwickeln von photoresisten |
US5252436A (en) * | 1989-12-15 | 1993-10-12 | Basf Aktiengesellschaft | Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds |
US5164286A (en) * | 1991-02-01 | 1992-11-17 | Ocg Microelectronic Materials, Inc. | Photoresist developer containing fluorinated amphoteric surfactant |
US5532116A (en) * | 1992-01-13 | 1996-07-02 | Fuji Photo Film Co., Ltd. | Aqueous alkaline developing solution |
US5543268A (en) * | 1992-05-14 | 1996-08-06 | Tokyo Ohka Kogyo Co., Ltd. | Developer solution for actinic ray-sensitive resist |
JP3104939B2 (ja) * | 1992-10-01 | 2000-10-30 | 東京応化工業株式会社 | 半導体デバイス製造用レジスト現像液組成物 |
DE4419166A1 (de) * | 1994-06-01 | 1995-12-07 | Hoechst Ag | Entwickler für Photoresistschichten |
JP3707856B2 (ja) * | 1996-03-07 | 2005-10-19 | 富士通株式会社 | レジストパターンの形成方法 |
KR100573560B1 (ko) | 1997-10-30 | 2006-08-30 | 가오가부시끼가이샤 | 레지스트용현상액 |
US6403289B1 (en) * | 1997-10-31 | 2002-06-11 | Nippon Zeon Co., Ltd. | Developer for photosensitive polyimide resin composition |
DE19755131C2 (de) * | 1997-12-11 | 2002-10-31 | Infineon Technologies Ag | Lösung von Tetramethylammoniumhydroxid in Wasser und Verfahren zur Herstellung der Lösung |
US6063550A (en) * | 1998-04-29 | 2000-05-16 | Morton International, Inc. | Aqueous developing solutions for reduced developer residue |
TWI221946B (en) | 1999-01-07 | 2004-10-11 | Kao Corp | Resist developer |
US6686126B2 (en) * | 2000-07-14 | 2004-02-03 | Fuji Photo Film Co., Ltd. | Developing solution for photosensitive lithographic printing plate, plate-making method of lithographic printing plate, and photosensitive lithographic printing plate |
US6503694B1 (en) * | 2001-06-12 | 2003-01-07 | Chi Mei Corporation | Developer solution and edge bead remover composition |
JP4230130B2 (ja) * | 2001-07-04 | 2009-02-25 | 富士フイルム株式会社 | 感光性平版印刷版用現像液及び平版印刷版の製版方法 |
US20030196685A1 (en) * | 2001-12-18 | 2003-10-23 | Shipley Company, L.L.C. | Cleaning composition and method |
EP1335016A1 (en) * | 2002-02-06 | 2003-08-13 | Shipley Company LLC | Cleaning composition |
US6599683B1 (en) * | 2002-02-13 | 2003-07-29 | Micron Technology, Inc. | Photoresist developer with reduced resist toppling and method of using same |
US6900003B2 (en) * | 2002-04-12 | 2005-05-31 | Shipley Company, L.L.C. | Photoresist processing aid and method |
JP2004252395A (ja) * | 2002-05-07 | 2004-09-09 | Shipley Co Llc | 残渣削減安定濃縮物 |
US6887654B2 (en) * | 2002-05-07 | 2005-05-03 | Shipley Company, L.L.C. | Residue and scum reducing composition and method |
US7053232B2 (en) * | 2002-08-16 | 2006-05-30 | Sachem, Inc. | Lewis acid ionic liquids |
US7750166B2 (en) * | 2002-08-16 | 2010-07-06 | University Of South Alabama | Ionic liquids containing a sulfonate anion |
JP4426526B2 (ja) | 2003-07-17 | 2010-03-03 | ハネウエル・インターナシヨナル・インコーポレーテツド | 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法 |
WO2007028294A1 (en) * | 2005-09-05 | 2007-03-15 | Byd Company Limited | A developer solution for photoresist |
CN1928724B (zh) * | 2005-09-05 | 2010-09-29 | 比亚迪股份有限公司 | 一种光阻显影液 |
JP4657899B2 (ja) * | 2005-11-30 | 2011-03-23 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
KR101161029B1 (ko) * | 2006-01-06 | 2012-06-28 | 에버라이트 유에스에이, 인코오포레이티드 | 현상제 조성물 |
KR101682005B1 (ko) * | 2011-09-02 | 2016-12-02 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR102378341B1 (ko) * | 2015-06-11 | 2022-03-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 현상액 |
CN107145044A (zh) * | 2017-06-17 | 2017-09-08 | 广州西陇精细化工技术有限公司 | 一种平板显示使用的显影液组合物 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US3868254A (en) * | 1972-11-29 | 1975-02-25 | Gaf Corp | Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants |
US4141733A (en) * | 1977-10-25 | 1979-02-27 | Eastman Kodak Company | Development of light-sensitive quinone diazide compositions |
JPS608494B2 (ja) * | 1978-03-01 | 1985-03-04 | 富士通株式会社 | ポジ型レジスト像の形成法 |
DE2925363C2 (de) * | 1978-06-23 | 1985-09-05 | Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa | Schutzmittel vom Emulsionstyp für die Oberfläche von lithographischen Druckplatten |
DE2925362C2 (de) * | 1978-06-23 | 1985-08-14 | Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa | Schutzmittel vom Emulsionstyp für die Oberfläche von lithographischen Druckplatten |
US4294911A (en) * | 1979-06-18 | 1981-10-13 | Eastman Kodak Company | Development of light-sensitive quinone diazide compositions using sulfite stabilizer |
US4308340A (en) * | 1980-08-08 | 1981-12-29 | American Hoechst Corporation | Aqueous 2-propoxyethanol containing processing composition for lithographic printing plates |
US4374920A (en) * | 1981-07-27 | 1983-02-22 | American Hoechst Corporation | Positive developer containing non-ionic surfactants |
JPS5854341A (ja) * | 1981-09-28 | 1983-03-31 | Fuji Photo Film Co Ltd | 現像方法および現像液 |
DE3230171A1 (de) * | 1982-08-13 | 1984-02-16 | Hoechst Ag, 6230 Frankfurt | Waessrig-alkalische loesung und verfahren zum entwickeln von positiv-arbeitenden reproduktionsschichten |
JPS59195641A (ja) * | 1983-04-21 | 1984-11-06 | Fuji Photo Film Co Ltd | 現像液組成物 |
JPS59219743A (ja) * | 1983-05-28 | 1984-12-11 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト現像液 |
JPS59220732A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | フオトレジスト現像液 |
US4556629A (en) * | 1983-12-21 | 1985-12-03 | Morton Thiokol, Inc. | Developer composition for positive photoresists using solution with cyclic quaternary ammonium hydroxides |
DE3346979A1 (de) * | 1983-12-24 | 1985-07-04 | Merck Patent Gmbh, 6100 Darmstadt | Entwickler fuer positivfotoresists |
KR850008058A (ko) * | 1984-05-16 | 1985-12-11 | 로이 에이취, 맷신길 | 양성 포토레지스트 전개제 및 전개방법 |
US4711836A (en) * | 1984-09-10 | 1987-12-08 | Olin Hunt Specialty Products, Inc. | Development of positive-working photoresist compositions |
US4613561A (en) * | 1984-10-17 | 1986-09-23 | James Marvin Lewis | Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution |
-
1986
- 1986-07-18 JP JP61167897A patent/JPH0638159B2/ja not_active Expired - Lifetime
-
1987
- 1987-06-26 US US07/067,312 patent/US4820621A/en not_active Expired - Lifetime
- 1987-07-01 GB GB8715459A patent/GB2193335B/en not_active Expired - Fee Related
- 1987-07-15 DE DE19873723429 patent/DE3723429A1/de active Granted
- 1987-07-18 KR KR1019870007790A patent/KR900005850B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100863732B1 (ko) * | 2001-02-21 | 2008-10-16 | 후지필름 가부시키가이샤 | 포지티브 전자선 레지스트 조성물 및 이를 이용한 패턴형성방법 |
KR100483371B1 (ko) * | 2001-10-10 | 2005-04-15 | 주식회사 아담스테크놀로지 | 포토레지스트용 수계 현상액 |
Also Published As
Publication number | Publication date |
---|---|
KR900005850B1 (ko) | 1990-08-13 |
GB2193335A (en) | 1988-02-03 |
JPS6325650A (ja) | 1988-02-03 |
US4820621A (en) | 1989-04-11 |
DE3723429C2 (ko) | 1992-12-17 |
GB2193335B (en) | 1990-02-14 |
DE3723429A1 (de) | 1988-01-28 |
GB8715459D0 (en) | 1987-08-05 |
JPH0638159B2 (ja) | 1994-05-18 |
US4820621B1 (ko) | 1991-03-12 |
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