DE3879516T2 - Positiv arbeitende Photolack-Zusammensetzung. - Google Patents

Positiv arbeitende Photolack-Zusammensetzung.

Info

Publication number
DE3879516T2
DE3879516T2 DE88100682T DE3879516T DE3879516T2 DE 3879516 T2 DE3879516 T2 DE 3879516T2 DE 88100682 T DE88100682 T DE 88100682T DE 3879516 T DE3879516 T DE 3879516T DE 3879516 T2 DE3879516 T2 DE 3879516T2
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88100682T
Other languages
English (en)
Other versions
DE3879516D1 (de
Inventor
Ltd Kawabe
Ltd Uenishi
Ltd Kokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of DE3879516D1 publication Critical patent/DE3879516D1/de
Application granted granted Critical
Publication of DE3879516T2 publication Critical patent/DE3879516T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
DE88100682T 1987-01-20 1988-01-19 Positiv arbeitende Photolack-Zusammensetzung. Expired - Fee Related DE3879516T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62010180A JPS63178228A (ja) 1987-01-20 1987-01-20 ポジ型フオトレジスト組成物

Publications (2)

Publication Number Publication Date
DE3879516D1 DE3879516D1 (de) 1993-04-29
DE3879516T2 true DE3879516T2 (de) 1993-10-07

Family

ID=11743087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88100682T Expired - Fee Related DE3879516T2 (de) 1987-01-20 1988-01-19 Positiv arbeitende Photolack-Zusammensetzung.

Country Status (5)

Country Link
US (1) US4863828A (de)
EP (1) EP0275970B1 (de)
JP (1) JPS63178228A (de)
KR (1) KR950007568B1 (de)
DE (1) DE3879516T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
JP2697039B2 (ja) * 1988-12-06 1998-01-14 住友化学工業株式会社 ポジ型レジスト組成物の製造方法
JPH02222955A (ja) * 1989-02-23 1990-09-05 Tokyo Ohka Kogyo Co Ltd ポジ型感光性組成物
AU5353790A (en) * 1989-04-27 1990-11-16 Olin Hunt Specialty Products Inc. Hexahydroxybenzophenone compounds as sensitivity enhancers for radiation sensitive mixtures
JP2846892B2 (ja) * 1989-07-19 1999-01-13 三菱化学株式会社 平版印刷版の製造法
JPH0350547A (ja) * 1989-07-19 1991-03-05 Mitsubishi Kasei Corp 平版印刷版の製造法
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
US5256521A (en) * 1989-09-19 1993-10-26 Ocg Microelectronic Materials, Inc. Process of developing a positive pattern in an O-quinone diazide photoresist containing a tris-(hydroxyphenyl) lower alkane compound sensitivity enhancer
US5219714A (en) * 1989-10-30 1993-06-15 Ocg Microelectronic Materials, Inc. Selected trihydroxybenzophenone compounds and their use in photoactive compounds and radiation sensitive mixtures
US5196517A (en) * 1989-10-30 1993-03-23 Ocg Microelectronic Materials, Inc. Selected trihydroxybenzophenone compounds and their use as photoactive compounds
JP2571136B2 (ja) * 1989-11-17 1997-01-16 日本ゼオン株式会社 ポジ型レジスト組成物
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH03242650A (ja) * 1990-02-20 1991-10-29 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JPH03294861A (ja) * 1990-04-13 1991-12-26 Mitsubishi Petrochem Co Ltd ポジ型フォトレジスト組成物
EP0469537B1 (de) * 1990-08-02 1998-12-30 Ppg Industries, Inc. Lichtempfindliche, elektroabscheidbare Photoresistzusammensetzung
US5268256A (en) * 1990-08-02 1993-12-07 Ppg Industries, Inc. Photoimageable electrodepositable photoresist composition for producing non-tacky films
EP0510670B1 (de) * 1991-04-26 1996-09-25 Sumitomo Chemical Company, Limited Positivarbeitende Resistzusammensetzung
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物
US5302489A (en) * 1991-10-29 1994-04-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
US5206348A (en) * 1992-07-23 1993-04-27 Morton International, Inc. Hexahydroxybenzophenone sulfonate esters of diazonaphthoquinone sensitizers and positive photoresists employing same
US5290418A (en) * 1992-09-24 1994-03-01 Applied Biosystems, Inc. Viscous electrophoresis polymer medium and method
JPH06186744A (ja) * 1992-12-22 1994-07-08 Sumitomo Bakelite Co Ltd 感光性樹脂組成物
TW305869B (de) * 1993-12-24 1997-05-21 Nissan Chemical Ind Ltd
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL80628C (de) * 1949-07-23
DE938233C (de) * 1953-03-11 1956-01-26 Kalle & Co Ag Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
NL247405A (de) * 1959-01-15
BE593836A (de) * 1959-08-05
DE2547905C2 (de) * 1975-10-25 1985-11-21 Hoechst Ag, 6230 Frankfurt Lichtempfindliches Aufzeichnungsmaterial
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US4421841A (en) * 1981-07-28 1983-12-20 Mitsubishi Chemical Industries Limited Photosensitive lithographic plate with sulfonate containing photosensitive polyester
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
EP0148787A3 (de) * 1984-01-10 1987-05-06 Japan Synthetic Rubber Co., Ltd. Positive lichtempfindliche Kunststoffzusammensetzung
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
EP0718693B1 (de) * 1986-12-23 2003-07-02 Shipley Company Inc. Fotoresistzusammensetzungen und ihre Bestandteile

Also Published As

Publication number Publication date
KR880009291A (ko) 1988-09-14
US4863828A (en) 1989-09-05
EP0275970A2 (de) 1988-07-27
KR950007568B1 (ko) 1995-07-12
DE3879516D1 (de) 1993-04-29
EP0275970B1 (de) 1993-03-24
EP0275970A3 (en) 1989-07-19
JPS63178228A (ja) 1988-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BARZ, P., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 80803 MUENCHEN

8339 Ceased/non-payment of the annual fee