DE69126834D1 - Positiv arbeitende Photoresistzusammensetzung - Google Patents
Positiv arbeitende PhotoresistzusammensetzungInfo
- Publication number
- DE69126834D1 DE69126834D1 DE69126834T DE69126834T DE69126834D1 DE 69126834 D1 DE69126834 D1 DE 69126834D1 DE 69126834 T DE69126834 T DE 69126834T DE 69126834 T DE69126834 T DE 69126834T DE 69126834 D1 DE69126834 D1 DE 69126834D1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist composition
- positive working
- working photoresist
- positive
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2242973A JP2711590B2 (ja) | 1990-09-13 | 1990-09-13 | ポジ型フオトレジスト組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69126834D1 true DE69126834D1 (de) | 1997-08-21 |
DE69126834T2 DE69126834T2 (de) | 1998-01-29 |
DE69126834T3 DE69126834T3 (de) | 2001-07-19 |
Family
ID=17096992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69126834T Expired - Lifetime DE69126834T3 (de) | 1990-09-13 | 1991-09-12 | Positiv arbeitende Photoresistzusammensetzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5340686A (de) |
EP (1) | EP0477691B2 (de) |
JP (1) | JP2711590B2 (de) |
KR (1) | KR0185994B1 (de) |
DE (1) | DE69126834T3 (de) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376497A (en) * | 1991-04-26 | 1994-12-27 | Nippon Zeon Co., Ltd. | Positive quinone diazide sulfonic acid ester resist composition containing select hydroxy compound additive |
JP2743697B2 (ja) * | 1991-04-26 | 1998-04-22 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
JPH05204144A (ja) * | 1991-08-21 | 1993-08-13 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
US5318875A (en) * | 1992-02-12 | 1994-06-07 | Fuji Photo Film Co., Ltd. | Positive quinonediazide photoresist composition containing select hydroxyphenol additive |
JP2753912B2 (ja) * | 1992-02-12 | 1998-05-20 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
JP2935223B2 (ja) * | 1992-04-14 | 1999-08-16 | 東京応化工業株式会社 | レジストパターン形成用材料の製造方法及びタンタルのパターン形成方法 |
JPH05323604A (ja) * | 1992-05-27 | 1993-12-07 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JP2944327B2 (ja) * | 1992-09-14 | 1999-09-06 | 富士写真フイルム株式会社 | ポジ型感光性平版印刷版 |
WO1994025904A1 (en) * | 1993-04-28 | 1994-11-10 | Toray Industries, Inc. | Positive electron-beam resist composition and developer for positive electron-beam resist |
US5635328A (en) * | 1993-08-21 | 1997-06-03 | Konica Corporation | Light-sensitive lithographic printing plate utilizing o-quinone diazide light-sensitive layer containing cyclic clathrate compound |
JP3130188B2 (ja) * | 1993-08-31 | 2001-01-31 | 富士写真フイルム株式会社 | ポジ型感光性平版印刷版 |
JPH0859530A (ja) * | 1994-06-15 | 1996-03-05 | Sumitomo Chem Co Ltd | ポリヒドロキシ化合物及びそれを含有するポジ型レジスト組成物 |
EP0698825A1 (de) * | 1994-07-29 | 1996-02-28 | AT&T Corp. | Energieempfindlicher Resist und Verfahren zur Herstellung eines Geräts mit diesem Resist |
WO1996022563A1 (fr) * | 1995-01-17 | 1996-07-25 | Nippon Zeon Co., Ltd. | Composition de resist positif |
US5541033A (en) * | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
JP3324898B2 (ja) * | 1995-02-24 | 2002-09-17 | 東京応化工業株式会社 | ポジ型レジストパターンの製造方法 |
JPH0915853A (ja) * | 1995-04-27 | 1997-01-17 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JPH0990622A (ja) * | 1995-09-22 | 1997-04-04 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
TW442710B (en) * | 1995-12-07 | 2001-06-23 | Clariant Finance Bvi Ltd | Isolation of novolak resin without high temperature distillation and photoresist composition therefrom |
JP3562673B2 (ja) | 1996-01-22 | 2004-09-08 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
US5853954A (en) * | 1996-12-18 | 1998-12-29 | Clariant Finance (Bvi) Limited | Fractionated novolak resin and photoresist composition therefrom |
WO1998027462A1 (en) * | 1996-12-18 | 1998-06-25 | Clariant International Ltd. | Photoresist composition containing a polymeric additive |
JP3652071B2 (ja) | 1997-07-25 | 2005-05-25 | 東京応化工業株式会社 | ノボラック樹脂前駆体およびノボラック樹脂の製造方法 |
TW459162B (en) * | 1997-08-01 | 2001-10-11 | Shipley Co Llc | Photoresist composition |
US5928836A (en) * | 1997-09-29 | 1999-07-27 | Clariant Finance (Bvi) Limited | Fractionated novolak resin copolymer and photoresist composition therefrom |
US5985507A (en) * | 1998-02-18 | 1999-11-16 | Olin Microelectronic Chemicals, Inc. | Selected high thermal novolaks and positive-working radiation-sensitive compositions |
JP3796564B2 (ja) * | 2000-02-23 | 2006-07-12 | 信越化学工業株式会社 | リフトオフレジスト組成物 |
US7192681B2 (en) | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
US7029657B2 (en) * | 2002-08-02 | 2006-04-18 | Balance Pharmaceuticals, Inc. | Nasal spray steroid formulation and method |
JP3977307B2 (ja) * | 2003-09-18 | 2007-09-19 | 東京応化工業株式会社 | ポジ型フォトレジスト組成物及びレジストパターン形成方法 |
JP4448705B2 (ja) | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
JP4469692B2 (ja) | 2004-09-14 | 2010-05-26 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法 |
JP4474256B2 (ja) | 2004-09-30 | 2010-06-02 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
EP1662319A3 (de) | 2004-11-24 | 2009-05-27 | Toray Industries, Inc. | Lichtempfindliche Harzzusammensetzung |
JP4452632B2 (ja) | 2005-01-24 | 2010-04-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
TWI530759B (zh) | 2005-01-24 | 2016-04-21 | 富士軟片股份有限公司 | 適用於浸漬曝光之正型光阻組成物及使用它之圖案形成方法 |
JP4562537B2 (ja) | 2005-01-28 | 2010-10-13 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
TWI471699B (zh) | 2005-03-04 | 2015-02-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
US7960087B2 (en) | 2005-03-11 | 2011-06-14 | Fujifilm Corporation | Positive photosensitive composition and pattern-forming method using the same |
JP4579019B2 (ja) | 2005-03-17 | 2010-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
EP1720072B1 (de) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Zusammensetzungen und Verfahren für Immersionslithografie |
JP4724465B2 (ja) | 2005-05-23 | 2011-07-13 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
JP4861767B2 (ja) | 2005-07-26 | 2012-01-25 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
JP4695941B2 (ja) | 2005-08-19 | 2011-06-08 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
TWI403843B (zh) | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
EP1795960B1 (de) | 2005-12-09 | 2019-06-05 | Fujifilm Corporation | Positive Resistzusammensetzung, Verfahren zur Musterbildung unter Verwendung der positiven Resistzusammensetzung, Verwendung der positiven Resistzusammensetzung |
JP4918312B2 (ja) * | 2006-09-01 | 2012-04-18 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
JP4911456B2 (ja) | 2006-11-21 | 2012-04-04 | 富士フイルム株式会社 | ポジ型感光性組成物、該ポジ型感光性組成物に用いられる高分子化合物、該高分子化合物の製造方法及びポジ型感光性組成物を用いたパターン形成方法 |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
EP1962139A1 (de) | 2007-02-23 | 2008-08-27 | FUJIFILM Corporation | Negative Resistzusammensetzung und Verfahren zur Strukturformung damit |
EP1975714A1 (de) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
EP1975716B1 (de) | 2007-03-28 | 2013-05-15 | Fujifilm Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
JP4562784B2 (ja) | 2007-04-13 | 2010-10-13 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
EP1980911A3 (de) | 2007-04-13 | 2009-06-24 | FUJIFILM Corporation | Strukturformungsverfahren, in dem Strukturformungsverfahren zu verwendende Harzzusammensetzung, in dem Strukturformungsverfahren zu verwendende negative Entwicklungslösung und in dem Strukturformungsverfahren zu verwendende Spüllösung |
JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
JP2008311474A (ja) | 2007-06-15 | 2008-12-25 | Fujifilm Corp | パターン形成方法 |
US7566527B2 (en) * | 2007-06-27 | 2009-07-28 | International Business Machines Corporation | Fused aromatic structures and methods for photolithographic applications |
US8088550B2 (en) | 2007-07-30 | 2012-01-03 | Fujifilm Corporation | Positive resist composition and pattern forming method |
JP5066405B2 (ja) | 2007-08-02 | 2012-11-07 | 富士フイルム株式会社 | 電子線、x線又はeuv用レジスト組成物及び該組成物を用いたパターン形成方法 |
EP2020617A3 (de) | 2007-08-03 | 2009-04-29 | FUJIFILM Corporation | Resistzusammensetzung mit einer Sulfoniumverbindung, Strukturbildungsverfahren mit der Resistzusammensetzung und Sulfoniumverbindung |
JP5449675B2 (ja) | 2007-09-21 | 2014-03-19 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
JP5150296B2 (ja) | 2008-02-13 | 2013-02-20 | 富士フイルム株式会社 | 電子線、x線またはeuv用ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
US9046773B2 (en) | 2008-03-26 | 2015-06-02 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound |
JP5997873B2 (ja) | 2008-06-30 | 2016-09-28 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
JP5244711B2 (ja) | 2008-06-30 | 2013-07-24 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
JP5746818B2 (ja) | 2008-07-09 | 2015-07-08 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
KR20110094054A (ko) | 2008-12-12 | 2011-08-19 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물 및 그 조성물을 이용한 패턴 형성 방법 |
EP2356517B1 (de) | 2008-12-12 | 2017-01-25 | FUJIFILM Corporation | Aktinische strahlenempfindliche oder strahlungsempfindliche harzzusammensetzung und diese verwendendes strukturbildungsverfahren |
JP5377172B2 (ja) | 2009-03-31 | 2013-12-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
JP5712099B2 (ja) | 2010-09-28 | 2015-05-07 | 富士フイルム株式会社 | レジスト組成物、並びに、それを用いたレジスト膜及びパターン形成方法 |
KR102134381B1 (ko) | 2017-07-31 | 2020-07-15 | 주식회사 엘지화학 | 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법 |
CN107844028B (zh) * | 2017-11-07 | 2021-04-30 | 潍坊星泰克微电子材料有限公司 | 一种光刻胶、制备方法及其光刻工艺 |
JP7274496B2 (ja) * | 2018-03-23 | 2023-05-16 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | ネガ作動型超厚膜フォトレジスト |
KR20210074372A (ko) | 2018-11-22 | 2021-06-21 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666473A (en) * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
US3928288A (en) * | 1973-04-11 | 1975-12-23 | Dow Chemical Co | Epoxy novolac resins having a narrow molecular weight distribution and process therefor |
JPS50902A (de) * | 1973-05-04 | 1975-01-08 | ||
JPS5280022A (en) * | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
US4173470A (en) * | 1977-11-09 | 1979-11-06 | Bell Telephone Laboratories, Incorporated | Novolak photoresist composition and preparation thereof |
JPS5820420B2 (ja) * | 1978-12-15 | 1983-04-22 | 富士通株式会社 | パタ−ン形成方法 |
DE3274354D1 (en) † | 1981-06-22 | 1987-01-08 | Hunt Chem Corp Philip A | Novolak resin and a positive photoresist composition containing the same |
JPS6045238A (ja) * | 1983-08-23 | 1985-03-11 | Fujitsu Ltd | ポジ型レジスト材料とその製造方法 |
DE3344202A1 (de) * | 1983-12-07 | 1985-06-20 | Merck Patent Gmbh, 6100 Darmstadt | Positiv-fotoresistzusammensetzungen |
JPS616647A (ja) * | 1984-06-20 | 1986-01-13 | Konishiroku Photo Ind Co Ltd | ポジ型感光性平版印刷版用感光性組成物 |
JPS61205933A (ja) * | 1985-03-08 | 1986-09-12 | Konishiroku Photo Ind Co Ltd | 感光性平版印刷版 |
US4626492A (en) * | 1985-06-04 | 1986-12-02 | Olin Hunt Specialty Products, Inc. | Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound |
JPS6273255A (ja) * | 1985-09-26 | 1987-04-03 | Konishiroku Photo Ind Co Ltd | 感光性組成物 |
CA1279430C (en) * | 1985-12-06 | 1991-01-22 | Takashi Kubota | High-molecular-weight soluble novolak resin and process for preparation thereof |
EP0239423B1 (de) * | 1986-03-28 | 1996-03-20 | Japan Synthetic Rubber Co., Ltd. | Positiv arbeitende photoempfindliche Kunststoffzusammensetzung |
JPS6343134A (ja) * | 1986-08-11 | 1988-02-24 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
JPH0772799B2 (ja) * | 1986-08-13 | 1995-08-02 | ソニー株式会社 | レジスト材料 |
JP2590342B2 (ja) † | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
US4877859A (en) * | 1987-03-24 | 1989-10-31 | Daikin Industries, Ltd. | Fluorine-containing novolak resin and derivative thereof |
DE3736758A1 (de) * | 1987-10-30 | 1989-05-11 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial |
JP2569669B2 (ja) * | 1987-12-28 | 1997-01-08 | 日本合成ゴム株式会社 | 感放射線性樹脂組成物 |
JP2625882B2 (ja) * | 1988-05-17 | 1997-07-02 | 住友化学工業株式会社 | ポジ型レジスト用組成物 |
JP2625883B2 (ja) * | 1988-05-17 | 1997-07-02 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
JP2629271B2 (ja) * | 1988-06-13 | 1997-07-09 | 住友化学工業株式会社 | ポジ型レジスト用組成物 |
CA1337626C (en) † | 1988-07-07 | 1995-11-28 | Haruyoshi Osaki | Radiation-sensitive positive resist composition |
US5130225A (en) † | 1990-05-24 | 1992-07-14 | Sumitomo Chemical Co. Ltd. | Positive resist composition comprising a cyclic dimer of isopropenyl phenol, also known as a 1,1,3 trimethyl-3-hydroxyphenyl indane |
JPH0450851A (ja) † | 1990-06-14 | 1992-02-19 | Sumitomo Chem Co Ltd | ポジ型感放射線性レジスト組成物 |
-
1990
- 1990-09-13 JP JP2242973A patent/JP2711590B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-12 EP EP91115498A patent/EP0477691B2/de not_active Expired - Lifetime
- 1991-09-12 DE DE69126834T patent/DE69126834T3/de not_active Expired - Lifetime
- 1991-09-13 KR KR1019910015989A patent/KR0185994B1/ko not_active IP Right Cessation
-
1993
- 1993-12-28 US US08/173,924 patent/US5340686A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0477691B2 (de) | 2001-03-07 |
US5340686A (en) | 1994-08-23 |
EP0477691A2 (de) | 1992-04-01 |
JPH04122938A (ja) | 1992-04-23 |
JP2711590B2 (ja) | 1998-02-10 |
KR920006803A (ko) | 1992-04-28 |
DE69126834T3 (de) | 2001-07-19 |
EP0477691A3 (en) | 1992-11-04 |
KR0185994B1 (ko) | 1999-04-01 |
DE69126834T2 (de) | 1998-01-29 |
EP0477691B1 (de) | 1997-07-16 |
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