KR920006803A - 양성 포토레지스트 조성물 - Google Patents

양성 포토레지스트 조성물 Download PDF

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Publication number
KR920006803A
KR920006803A KR1019910015989A KR910015989A KR920006803A KR 920006803 A KR920006803 A KR 920006803A KR 1019910015989 A KR1019910015989 A KR 1019910015989A KR 910015989 A KR910015989 A KR 910015989A KR 920006803 A KR920006803 A KR 920006803A
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group
weight
molecular weight
photoresist composition
positive photoresist
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KR1019910015989A
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KR0185994B1 (ko
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신지 사까구찌
시로 탄
타다요시 코구보
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오오니시 미노루
후지샤신 필름 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

양성 포토레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. (1) 1.5~4.0의 분산도를 갖는 알카리 용해 페놀 노볼락; (2) 1.2-퀴논 디아지드 화합물 및(3) 상기 노볼락을 기준으로 12~50 탄소원자/mole 및 2~8 페놀 히드록실기/mole를 갖는 2~30중량%의 저분자량화합물을 포함하는 양성 포토레지스트 조성물, 여기에서 상기의 분산도는 상기 노볼락의 중량-평균 분자량과 수-평균 분자량으로 결정되고, 상기 중량-평균 및 수-평균 분자량은 표준 폴리스틸렌을 사용하여 정의되는 겔투과 크로마토그라피(GPC)에 의해 얻어지고, 상기의 분산도는 수-평균분자량에 대한 중량-평균 분자량의 비율이다.
  2. 제1항에 있어서, 상기의 분산도가 1.5~3.5인 양성 포토레지스트 조성물.
  3. 제1항에 있어서, 상기의 노볼락이 1,000~6,000의 중량-평균 분자량을 갖는 양성 포토레지스트 조성물.
  4. 제3항에 있어서, 상기의 노블락이 2,000~4,000의 중량-평균 분자량을 갖는 양성 포토레지스트 조성물.
  5. 제1항에 있어서, 상기의 저분자량 화합물이 상기 노불락을 기준으로 하여 5~20중량% 의량으로 존재하는 양성 포토레지스트 조성물.
  6. 제1항에 있어서, 상기 1, 2-퀴논디아지드 화합물이 상기 노볼락의 100중량부당 5~50중량부의 량으로 존재하는 양성 포토레지스트 조성물.
  7. 제6항에 있어서, 상기 1, 2-퀴논디아지드 화합물이 상기 노볼락의 100중량부당 10~40중량부의 량으로 존재하는 양성 포토레지스트 조성물.
  8. 제1항에 있어서, 상기의 저분자량 화합물이 하기의 일반식(1)~(9)중 어느 하나로 표시되는 양성 포토레지스트 조성물.
    여기에서, R1∼R4는 동일하거나 서러 다를 수 있으며, 이를 각각은 할로겐원자, 낮은 알킬기, 알콕시기, 알실기 또는 아실록기이고, R5와 R6은 동일하거나 상이 할 수도 있으며, 각각은 수소원자, 낮은 알킬기 또는 낮은 할로 알킬이고, R7은 수소원자, 할로겐원자, 낮은 알킬기, 알콕시기, 아실기 또는 아실록기이며, R8∼R10은 동일 또는 상이할 수도 있으며, 각각은 수소원자, 할로겐원자, 히드록실기 낮은 알킬기, 알콕시기, 아실기 또는 아실록시기이고, a∼d는 0또는 1∼3까지의 정수이며, ℓ∼n은 1∼3까지의 정수이며, e∼g는 0또는 1또는 2의 정수이고, p는 1∼3까지의 정수이고, h는 0또는 1∼(4-p)까지의 정수이고, q는 3∼8까지의 정수이며, r은 1∼3까지의 정수이고, s는 0또는 1∼4까지의 정수이며, 일반식(I)은 이들 화합물의 혼합물을 표시하고, A는 수소원자 또는 히드록실기이며, X는 메틸렌기, 낮은 알킬치환메틸렌기, 할로메틴렌기 또는 할로 알킬메틸렌기이고, Y는 메틸렌기, 낮은 알킬치환 메틸렌기, 벤질리덴기, 치환벤질리덴기, 직선사슬 또는 분기 알킬렌기, 치환 알킬렌기, 또는 히드록시 알킬렌기, 2∼8탄소원자를 갖는 모든 알킬렌기 이며, Z는 단결합 또는 옥시메틸기 이고,
    D는
  9. 제1항에 있어서, 상기의 저분자량 화합물이 제8항에 도시된 일반식(2)또는 (3)으로 표시되는 양성 프로레지스트 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910015989A 1990-09-13 1991-09-13 양성 포토레지스트 조성물 KR0185994B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2242973A JP2711590B2 (ja) 1990-09-13 1990-09-13 ポジ型フオトレジスト組成物
JP2-242973 1990-09-13

Publications (2)

Publication Number Publication Date
KR920006803A true KR920006803A (ko) 1992-04-28
KR0185994B1 KR0185994B1 (ko) 1999-04-01

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ID=17096992

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KR1019910015989A KR0185994B1 (ko) 1990-09-13 1991-09-13 양성 포토레지스트 조성물

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Country Link
US (1) US5340686A (ko)
EP (1) EP0477691B2 (ko)
JP (1) JP2711590B2 (ko)
KR (1) KR0185994B1 (ko)
DE (1) DE69126834T3 (ko)

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US5340686A (en) 1994-08-23
EP0477691B1 (en) 1997-07-16
JP2711590B2 (ja) 1998-02-10
JPH04122938A (ja) 1992-04-23
DE69126834T2 (de) 1998-01-29
DE69126834T3 (de) 2001-07-19
EP0477691B2 (en) 2001-03-07
EP0477691A3 (en) 1992-11-04
KR0185994B1 (ko) 1999-04-01
EP0477691A2 (en) 1992-04-01
DE69126834D1 (de) 1997-08-21

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