DE69413925T2 - Positiv arbeitende Resistzusammensetzung - Google Patents

Positiv arbeitende Resistzusammensetzung

Info

Publication number
DE69413925T2
DE69413925T2 DE69413925T DE69413925T DE69413925T2 DE 69413925 T2 DE69413925 T2 DE 69413925T2 DE 69413925 T DE69413925 T DE 69413925T DE 69413925 T DE69413925 T DE 69413925T DE 69413925 T2 DE69413925 T2 DE 69413925T2
Authority
DE
Germany
Prior art keywords
resist composition
positive resist
positive
composition
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69413925T
Other languages
English (en)
Other versions
DE69413925D1 (de
Inventor
Kazuhiko Hashimoto
Haruyoshi Osaki
Yasunori Uetani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Application granted granted Critical
Publication of DE69413925D1 publication Critical patent/DE69413925D1/de
Publication of DE69413925T2 publication Critical patent/DE69413925T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69413925T 1993-11-08 1994-11-07 Positiv arbeitende Resistzusammensetzung Expired - Fee Related DE69413925T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27822593A JP3319092B2 (ja) 1993-11-08 1993-11-08 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
DE69413925D1 DE69413925D1 (de) 1998-11-19
DE69413925T2 true DE69413925T2 (de) 1999-04-29

Family

ID=17594364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413925T Expired - Fee Related DE69413925T2 (de) 1993-11-08 1994-11-07 Positiv arbeitende Resistzusammensetzung

Country Status (7)

Country Link
US (1) US5792586A (de)
EP (1) EP0652484B1 (de)
JP (1) JP3319092B2 (de)
KR (1) KR100334145B1 (de)
CA (1) CA2135250A1 (de)
DE (1) DE69413925T2 (de)
TW (1) TW350040B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
KR102482878B1 (ko) 2017-09-26 2022-12-29 삼성전자 주식회사 집적회로 소자의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123279A (en) * 1974-03-25 1978-10-31 Fuji Photo Film Co., Ltd. Light-sensitive o-quinonediazide containing planographic printing plate
JPH0656487B2 (ja) * 1986-05-02 1994-07-27 東京応化工業株式会社 ポジ型ホトレジスト用組成物
US4797345A (en) * 1987-07-01 1989-01-10 Olin Hunt Specialty Products, Inc. Light-sensitive 1,2-naphthoquinone-2-diazide-4-sulfonic acid monoesters of cycloalkyl substituted phenol and their use in light-sensitive mixtures
NO891063L (no) * 1988-03-31 1989-10-02 Thiokol Morton Inc Novolakharpikser av blandede aldehyder og positive fotoresistmaterialer fremstilt fra slike harpikser.
US5238771A (en) * 1988-05-31 1993-08-24 Konica Corporation Lithographic printing plate utilizing aluminum substrate with photosensitive layer containing o-naphthoquinonediazide sulfonic acid ester, alkali soluble resin and select additive
JPH03274054A (ja) * 1990-03-23 1991-12-05 Konica Corp 感光性組成物
JP3182823B2 (ja) * 1991-12-27 2001-07-03 住友化学工業株式会社 ポジ型レジスト組成物
JPH05188590A (ja) * 1992-01-16 1993-07-30 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH05222146A (ja) * 1992-02-14 1993-08-31 Daikin Ind Ltd 硬質ポリウレタンフォームの製造法

Also Published As

Publication number Publication date
US5792586A (en) 1998-08-11
JPH07128849A (ja) 1995-05-19
EP0652484B1 (de) 1998-10-14
KR100334145B1 (ko) 2002-11-29
EP0652484A3 (de) 1996-01-17
JP3319092B2 (ja) 2002-08-26
CA2135250A1 (en) 1995-05-09
DE69413925D1 (de) 1998-11-19
EP0652484A2 (de) 1995-05-10
KR950014985A (ko) 1995-06-16
TW350040B (en) 1999-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee