DE69710547T2 - Positiv arbeitende Resistzusammensetzung - Google Patents
Positiv arbeitende ResistzusammensetzungInfo
- Publication number
- DE69710547T2 DE69710547T2 DE69710547T DE69710547T DE69710547T2 DE 69710547 T2 DE69710547 T2 DE 69710547T2 DE 69710547 T DE69710547 T DE 69710547T DE 69710547 T DE69710547 T DE 69710547T DE 69710547 T2 DE69710547 T2 DE 69710547T2
- Authority
- DE
- Germany
- Prior art keywords
- resist composition
- positive resist
- positive
- composition
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27333296 | 1996-10-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69710547D1 DE69710547D1 (de) | 2002-03-28 |
DE69710547T2 true DE69710547T2 (de) | 2002-10-10 |
Family
ID=17526419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69710547T Expired - Fee Related DE69710547T2 (de) | 1996-10-16 | 1997-10-15 | Positiv arbeitende Resistzusammensetzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5916728A (de) |
EP (1) | EP0837368B1 (de) |
KR (1) | KR100528270B1 (de) |
DE (1) | DE69710547T2 (de) |
TW (1) | TW490593B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3414197B2 (ja) * | 1997-05-26 | 2003-06-09 | 住友化学工業株式会社 | フォトレジスト組成物 |
US6852466B2 (en) | 1998-12-23 | 2005-02-08 | Shipley Company, L.L.C. | Photoresist compositions particularly suitable for short wavelength imaging |
TW550438B (en) * | 1999-04-26 | 2003-09-01 | Jsr Corp | Radiation-sensitive resin composition |
JP3931484B2 (ja) | 1999-06-03 | 2007-06-13 | 住友化学株式会社 | ポジ型フォトレジスト組成物 |
JP3787271B2 (ja) * | 2000-11-20 | 2006-06-21 | 東京応化工業株式会社 | 微細レジストホールパターン形成方法 |
JP3849486B2 (ja) * | 2001-10-19 | 2006-11-22 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4434762B2 (ja) | 2003-01-31 | 2010-03-17 | 東京応化工業株式会社 | レジスト組成物 |
US8029972B2 (en) * | 2007-10-11 | 2011-10-04 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
EP2478414B1 (de) | 2009-09-16 | 2014-12-31 | FUJIFILM Corporation | Gegenüber aktinischer strahlung empfindliche harzzusammensetzung und strukturbildungsverfahren damit |
JP5565231B2 (ja) * | 2009-09-25 | 2014-08-06 | 住友化学株式会社 | レジスト組成物 |
TWI499581B (zh) | 2010-07-28 | 2015-09-11 | Sumitomo Chemical Co | 光阻組成物 |
JP5829941B2 (ja) | 2011-02-25 | 2015-12-09 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5947051B2 (ja) * | 2011-02-25 | 2016-07-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP6034025B2 (ja) | 2011-02-25 | 2016-11-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5898521B2 (ja) | 2011-02-25 | 2016-04-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5829939B2 (ja) | 2011-02-25 | 2015-12-09 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5947053B2 (ja) | 2011-02-25 | 2016-07-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5898520B2 (ja) | 2011-02-25 | 2016-04-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5829940B2 (ja) | 2011-02-25 | 2015-12-09 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP6034026B2 (ja) | 2011-02-25 | 2016-11-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP6189020B2 (ja) | 2011-07-19 | 2017-08-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5912912B2 (ja) | 2011-07-19 | 2016-04-27 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP6013799B2 (ja) | 2011-07-19 | 2016-10-25 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP6013797B2 (ja) | 2011-07-19 | 2016-10-25 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP6013798B2 (ja) * | 2011-07-19 | 2016-10-25 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
KR101413078B1 (ko) | 2011-12-30 | 2014-07-02 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물 |
CN103454857B (zh) * | 2012-05-31 | 2020-01-03 | 住友化学株式会社 | 光致抗蚀剂组合物 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0480758A (ja) * | 1990-07-23 | 1992-03-13 | Fuji Photo Film Co Ltd | 感光性組成物 |
KR950000482B1 (ko) * | 1991-04-30 | 1995-01-20 | 가부시키가이샤 도시바 | 패턴형성용 레지스트 |
EP0537524A1 (de) * | 1991-10-17 | 1993-04-21 | Shipley Company Inc. | Strahlungsempfindliche Zusammensetzungen und Verfahren |
JP3010607B2 (ja) * | 1992-02-25 | 2000-02-21 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JP3297199B2 (ja) * | 1993-09-14 | 2002-07-02 | 株式会社東芝 | レジスト組成物 |
JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
-
1997
- 1997-10-14 TW TW086115071A patent/TW490593B/zh not_active IP Right Cessation
- 1997-10-15 US US08/950,754 patent/US5916728A/en not_active Expired - Lifetime
- 1997-10-15 KR KR1019970052671A patent/KR100528270B1/ko active IP Right Grant
- 1997-10-15 EP EP97117874A patent/EP0837368B1/de not_active Expired - Lifetime
- 1997-10-15 DE DE69710547T patent/DE69710547T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100528270B1 (ko) | 2006-03-09 |
US5916728A (en) | 1999-06-29 |
EP0837368B1 (de) | 2002-02-20 |
DE69710547D1 (de) | 2002-03-28 |
EP0837368A1 (de) | 1998-04-22 |
KR19980032828A (ko) | 1998-07-25 |
TW490593B (en) | 2002-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |