DE69600202T2 - Positiv arbeitende Fotoresistzusammensetzung - Google Patents

Positiv arbeitende Fotoresistzusammensetzung

Info

Publication number
DE69600202T2
DE69600202T2 DE69600202T DE69600202T DE69600202T2 DE 69600202 T2 DE69600202 T2 DE 69600202T2 DE 69600202 T DE69600202 T DE 69600202T DE 69600202 T DE69600202 T DE 69600202T DE 69600202 T2 DE69600202 T2 DE 69600202T2
Authority
DE
Germany
Prior art keywords
photoresist composition
positive photoresist
positive
composition
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69600202T
Other languages
English (en)
Other versions
DE69600202D1 (de
Inventor
Yasumasa Kawabe
Shiro Tan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69600202D1 publication Critical patent/DE69600202D1/de
Publication of DE69600202T2 publication Critical patent/DE69600202T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
DE69600202T 1995-09-22 1996-09-20 Positiv arbeitende Fotoresistzusammensetzung Expired - Lifetime DE69600202T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7244703A JPH0990622A (ja) 1995-09-22 1995-09-22 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
DE69600202D1 DE69600202D1 (de) 1998-04-30
DE69600202T2 true DE69600202T2 (de) 1998-07-16

Family

ID=17122678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69600202T Expired - Lifetime DE69600202T2 (de) 1995-09-22 1996-09-20 Positiv arbeitende Fotoresistzusammensetzung

Country Status (4)

Country Link
US (1) US5948587A (de)
EP (1) EP0766139B1 (de)
JP (1) JPH0990622A (de)
DE (1) DE69600202T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562673B2 (ja) * 1996-01-22 2004-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP4006815B2 (ja) * 1997-06-11 2007-11-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
DE69821304T2 (de) * 1997-10-03 2004-11-18 Jsr Corp. Strahlungsempfindliche Harzzusammensetzung
US6295153B1 (en) * 1998-06-04 2001-09-25 Board Of Regents, The University Of Texas System Digital optical chemistry micromirror imager
JP3931486B2 (ja) * 1999-06-24 2007-06-13 住友化学株式会社 ポジ型レジスト組成物
US6468712B1 (en) 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
AU2001244719A1 (en) * 2000-04-04 2001-10-15 Daikin Industries Ltd. Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same
KR100846085B1 (ko) * 2001-10-31 2008-07-14 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
KR100783603B1 (ko) * 2002-01-05 2007-12-07 삼성전자주식회사 포토레지스트 조성물 및 이를 사용한 패턴의 형성방법
JP2004341431A (ja) * 2003-05-19 2004-12-02 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターンの形成方法
JP4209297B2 (ja) * 2003-10-06 2009-01-14 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
KR20060090519A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법
KR20090109432A (ko) * 2008-04-15 2009-10-20 삼성전자주식회사 감광성 수지, 상기 감광성 수지를 사용한 패턴의 형성 방법및 표시판의 제조 방법
KR20120027685A (ko) * 2010-09-13 2012-03-22 삼성테크윈 주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법
US8822123B2 (en) 2012-07-13 2014-09-02 Momentive Specialty Chemicals Inc. Polymeric materials and methods for making the polymeric materials
US9562884B2 (en) * 2013-06-05 2017-02-07 Institute of Microelectronics, Chinese Academy of Sciences Method for manufacturing NO2 gas sensor for detection at room temperature
CN107844028B (zh) * 2017-11-07 2021-04-30 潍坊星泰克微电子材料有限公司 一种光刻胶、制备方法及其光刻工艺

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3751743T2 (de) * 1986-03-28 1996-11-14 Japan Synthetic Rubber Co Ltd Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JPH0654388B2 (ja) * 1986-05-02 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
JPH0656487B2 (ja) * 1986-05-02 1994-07-27 東京応化工業株式会社 ポジ型ホトレジスト用組成物
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
JP2693472B2 (ja) * 1987-11-26 1997-12-24 株式会社東芝 レジスト
JP2623778B2 (ja) * 1988-10-18 1997-06-25 日本合成ゴム株式会社 感放射線性樹脂組成物
JPH03155554A (ja) * 1989-11-14 1991-07-03 Japan Synthetic Rubber Co Ltd 放射線感応性樹脂組成物
JP3063148B2 (ja) * 1989-12-27 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物
TW202504B (de) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5413896A (en) * 1991-01-24 1995-05-09 Japan Synthetic Rubber Co., Ltd. I-ray sensitive positive resist composition
US5376497A (en) * 1991-04-26 1994-12-27 Nippon Zeon Co., Ltd. Positive quinone diazide sulfonic acid ester resist composition containing select hydroxy compound additive
US5372909A (en) * 1991-09-24 1994-12-13 Mitsubishi Kasei Corporation Photosensitive resin composition comprising an alkali-soluble resin made from a phenolic compound and at least 2 different aldehydes
JPH05142770A (ja) * 1991-11-19 1993-06-11 Hitachi Chem Co Ltd ポジ型フオトレジスト組成物
US5554481A (en) * 1993-09-20 1996-09-10 Fuji Photo Film Co., Ltd. Positive working photoresist composition

Also Published As

Publication number Publication date
US5948587A (en) 1999-09-07
DE69600202D1 (de) 1998-04-30
EP0766139A1 (de) 1997-04-02
JPH0990622A (ja) 1997-04-04
EP0766139B1 (de) 1998-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP