DE69610161D1 - Positiv arbeitende Fotoresistzusammensetzung - Google Patents

Positiv arbeitende Fotoresistzusammensetzung

Info

Publication number
DE69610161D1
DE69610161D1 DE69610161T DE69610161T DE69610161D1 DE 69610161 D1 DE69610161 D1 DE 69610161D1 DE 69610161 T DE69610161 T DE 69610161T DE 69610161 T DE69610161 T DE 69610161T DE 69610161 D1 DE69610161 D1 DE 69610161D1
Authority
DE
Germany
Prior art keywords
photoresist composition
positive photoresist
positive
composition
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610161T
Other languages
English (en)
Other versions
DE69610161T2 (de
Inventor
Kazufumi Sato
Kazuyuki Nitta
Akiyoshi Yamazaki
Yoshika Sakai
Toshimasa Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of DE69610161D1 publication Critical patent/DE69610161D1/de
Publication of DE69610161T2 publication Critical patent/DE69610161T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
DE69610161T 1995-06-15 1996-06-03 Positiv arbeitende Fotoresistzusammensetzung Expired - Fee Related DE69610161T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7149285A JP2956824B2 (ja) 1995-06-15 1995-06-15 ポジ型レジスト膜形成用塗布液

Publications (2)

Publication Number Publication Date
DE69610161D1 true DE69610161D1 (de) 2000-10-12
DE69610161T2 DE69610161T2 (de) 2001-01-11

Family

ID=15471859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610161T Expired - Fee Related DE69610161T2 (de) 1995-06-15 1996-06-03 Positiv arbeitende Fotoresistzusammensetzung

Country Status (6)

Country Link
US (2) US5770343A (de)
EP (1) EP0749044B1 (de)
JP (1) JP2956824B2 (de)
KR (1) KR100207755B1 (de)
DE (1) DE69610161T2 (de)
TW (1) TW449674B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3046225B2 (ja) * 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JP3073149B2 (ja) * 1995-10-30 2000-08-07 東京応化工業株式会社 ポジ型レジスト組成物
JP2998682B2 (ja) * 1997-03-13 2000-01-11 日本電気株式会社 化学増幅系レジスト
US6090518A (en) * 1997-05-07 2000-07-18 Mitsubishi Chemical Corporation Radiation sensitive composition
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
US6103447A (en) 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
DE69915928T2 (de) * 1998-05-19 2005-04-14 Jsr Corp. Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung
JP3771739B2 (ja) * 1999-03-18 2006-04-26 東京応化工業株式会社 ポジ型レジスト組成物
US6887646B1 (en) * 1999-07-12 2005-05-03 Mitsubishi Rayon Co., Ltd. Chemical amplification resist composition
US6187506B1 (en) * 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6338931B1 (en) * 1999-08-16 2002-01-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
US6395446B1 (en) * 1999-10-06 2002-05-28 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
EP1314725B1 (de) * 2000-08-30 2008-03-19 Wako Pure Chemical Industries, Ltd. Sulphoniumsalz-verbindung
KR100587452B1 (ko) * 2001-09-28 2006-06-09 신에쓰 가가꾸 고교 가부시끼가이샤 신규 술포닐디아조메탄 화합물, 광산발생제 및 그것을이용한 레지스트 재료 및 패턴 형성 방법
JP3981830B2 (ja) * 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4580841B2 (ja) * 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
DE3711264A1 (de) * 1987-04-03 1988-10-13 Hoechst Ag Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
EP0388482B1 (de) * 1989-03-20 1994-07-06 Siemens Aktiengesellschaft Lichtempfindliches Gemisch
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5212046A (en) * 1989-10-17 1993-05-18 Shipley Company Inc. Near UV photoresist
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
DE4222968A1 (de) * 1992-07-13 1994-01-20 Hoechst Ag Positiv-arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
KR100355254B1 (en) * 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
JPH06266110A (ja) * 1993-03-12 1994-09-22 Nippon Telegr & Teleph Corp <Ntt> ポジ型レジスト材料
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JPH0792681A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
EP0749044B1 (de) 2000-09-06
TW449674B (en) 2001-08-11
DE69610161T2 (de) 2001-01-11
JPH095987A (ja) 1997-01-10
EP0749044A2 (de) 1996-12-18
JP2956824B2 (ja) 1999-10-04
EP0749044A3 (de) 1997-04-16
KR100207755B1 (ko) 1999-07-15
US5770343A (en) 1998-06-23
US5874195A (en) 1999-02-23
KR970002470A (ko) 1997-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee