TW449674B - Positive-working photoresist composition - Google Patents

Positive-working photoresist composition Download PDF

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Publication number
TW449674B
TW449674B TW085106340A TW85106340A TW449674B TW 449674 B TW449674 B TW 449674B TW 085106340 A TW085106340 A TW 085106340A TW 85106340 A TW85106340 A TW 85106340A TW 449674 B TW449674 B TW 449674B
Authority
TW
Taiwan
Prior art keywords
compounds
compound
group
weight
photoresist composition
Prior art date
Application number
TW085106340A
Other languages
English (en)
Chinese (zh)
Inventor
Kazufumi Sato
Kazuyuki Nitta
Akiyoshi Yamazaki
Yoshika Sakai
Toshimasa Nakayama
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of TW449674B publication Critical patent/TW449674B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
TW085106340A 1995-06-15 1996-05-28 Positive-working photoresist composition TW449674B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7149285A JP2956824B2 (ja) 1995-06-15 1995-06-15 ポジ型レジスト膜形成用塗布液

Publications (1)

Publication Number Publication Date
TW449674B true TW449674B (en) 2001-08-11

Family

ID=15471859

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085106340A TW449674B (en) 1995-06-15 1996-05-28 Positive-working photoresist composition

Country Status (6)

Country Link
US (2) US5770343A (de)
EP (1) EP0749044B1 (de)
JP (1) JP2956824B2 (de)
KR (1) KR100207755B1 (de)
DE (1) DE69610161T2 (de)
TW (1) TW449674B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3046225B2 (ja) * 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JP3073149B2 (ja) * 1995-10-30 2000-08-07 東京応化工業株式会社 ポジ型レジスト組成物
JP2998682B2 (ja) * 1997-03-13 2000-01-11 日本電気株式会社 化学増幅系レジスト
US6090518A (en) * 1997-05-07 2000-07-18 Mitsubishi Chemical Corporation Radiation sensitive composition
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
US6103447A (en) * 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
TWI232855B (en) * 1998-05-19 2005-05-21 Jsr Corp Diazodisulfone compound and radiation-sensitive resin composition
JP3771739B2 (ja) * 1999-03-18 2006-04-26 東京応化工業株式会社 ポジ型レジスト組成物
KR100781067B1 (ko) * 1999-07-12 2007-11-30 미쯔비시 레이온 가부시끼가이샤 화학 증폭형 내식막 조성물
US6187506B1 (en) * 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6338931B1 (en) * 1999-08-16 2002-01-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
US6395446B1 (en) * 1999-10-06 2002-05-28 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
AU2001267839A1 (en) * 2000-08-30 2002-03-13 Wako Pure Chemical Industries, Ltd. Sulfonium salt compound
TWI225968B (en) * 2001-09-28 2005-01-01 Shinetsu Chemical Co Novel sulfonyliazomethanes, photoacid generators, resist compositions, and patterning process
JP3981830B2 (ja) * 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4580841B2 (ja) * 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
DE3711264A1 (de) * 1987-04-03 1988-10-13 Hoechst Ag Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
EP0388482B1 (de) * 1989-03-20 1994-07-06 Siemens Aktiengesellschaft Lichtempfindliches Gemisch
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5212046A (en) * 1989-10-17 1993-05-18 Shipley Company Inc. Near UV photoresist
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
DE4222968A1 (de) * 1992-07-13 1994-01-20 Hoechst Ag Positiv-arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
KR100355254B1 (en) * 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
JPH06266110A (ja) * 1993-03-12 1994-09-22 Nippon Telegr & Teleph Corp <Ntt> ポジ型レジスト材料
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JPH0792681A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
EP0749044A3 (de) 1997-04-16
DE69610161D1 (de) 2000-10-12
US5874195A (en) 1999-02-23
KR970002470A (ko) 1997-01-24
EP0749044B1 (de) 2000-09-06
EP0749044A2 (de) 1996-12-18
DE69610161T2 (de) 2001-01-11
JPH095987A (ja) 1997-01-10
JP2956824B2 (ja) 1999-10-04
US5770343A (en) 1998-06-23
KR100207755B1 (ko) 1999-07-15

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MM4A Annulment or lapse of patent due to non-payment of fees