DE69821049D1 - Positiv arbeitende lichtempfindliche Zusammensetzung - Google Patents
Positiv arbeitende lichtempfindliche ZusammensetzungInfo
- Publication number
- DE69821049D1 DE69821049D1 DE69821049T DE69821049T DE69821049D1 DE 69821049 D1 DE69821049 D1 DE 69821049D1 DE 69821049 T DE69821049 T DE 69821049T DE 69821049 T DE69821049 T DE 69821049T DE 69821049 D1 DE69821049 D1 DE 69821049D1
- Authority
- DE
- Germany
- Prior art keywords
- positive
- photosensitive composition
- working photosensitive
- working
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11977397A JP3731776B2 (ja) | 1997-05-09 | 1997-05-09 | ポジ型感光性組成物 |
JP11977297A JP3755690B2 (ja) | 1997-05-09 | 1997-05-09 | ポジ型感光性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69821049D1 true DE69821049D1 (de) | 2004-02-19 |
DE69821049T2 DE69821049T2 (de) | 2004-10-21 |
Family
ID=26457446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69821049T Expired - Lifetime DE69821049T2 (de) | 1997-05-09 | 1998-05-08 | Positiv arbeitende lichtempfindliche Zusammensetzung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6479209B1 (de) |
EP (1) | EP0877293B1 (de) |
KR (1) | KR100516702B1 (de) |
DE (1) | DE69821049T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0878738B1 (de) | 1997-05-12 | 2002-01-09 | Fuji Photo Film Co., Ltd. | Positiv arbeitende Resistzusammensetzung |
US6057083A (en) * | 1997-11-04 | 2000-05-02 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
JPH11231541A (ja) * | 1998-02-17 | 1999-08-27 | Daicel Chem Ind Ltd | 放射線感光材料及びそれを使用したパターン形成方法 |
JP4067215B2 (ja) * | 1999-03-08 | 2008-03-26 | 富士フイルム株式会社 | ポジ型感放射線性樹脂組成物 |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP3812622B2 (ja) | 1999-09-17 | 2006-08-23 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP3351424B2 (ja) | 1999-12-28 | 2002-11-25 | 日本電気株式会社 | スルホニウム塩化合物及びレジスト組成物、並びにそれを用いたパターン形成方法 |
WO2001055789A2 (en) * | 2000-01-25 | 2001-08-02 | Infineon Technologies Ag | Chemically amplified short wavelength resist |
US6379861B1 (en) * | 2000-02-22 | 2002-04-30 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
JP4177966B2 (ja) * | 2001-01-25 | 2008-11-05 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
DE10120660B8 (de) * | 2001-04-27 | 2006-09-28 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
DE10120676B4 (de) * | 2001-04-27 | 2005-06-16 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
DE10120674B4 (de) * | 2001-04-27 | 2005-06-16 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
DE10120673B4 (de) * | 2001-04-27 | 2007-01-25 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
JP3827290B2 (ja) | 2001-10-03 | 2006-09-27 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
EP1308781A3 (de) * | 2001-10-05 | 2003-09-03 | Shipley Co. L.L.C. | Cyclische sulfonium und sulfoxonium Fotosäure erzeugende Verbindungen und diese Verbindungen enthaltende Fotoresiste |
BR0307501A (pt) | 2002-02-06 | 2004-12-07 | Ciba Sc Holding Ag | Derivados de sulfonato e o uso destes como ácidos latentes |
US20030235775A1 (en) | 2002-06-13 | 2003-12-25 | Munirathna Padmanaban | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
US20040265733A1 (en) * | 2003-06-30 | 2004-12-30 | Houlihan Francis M. | Photoacid generators |
TW200613915A (en) * | 2004-03-24 | 2006-05-01 | Jsr Corp | Positively radiation-sensitive resin composition |
TWI477909B (zh) * | 2006-01-24 | 2015-03-21 | Fujifilm Corp | 正型感光性組成物及使用它之圖案形成方法 |
JP4637221B2 (ja) | 2007-09-28 | 2011-02-23 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 |
CN102781911B (zh) | 2010-02-24 | 2015-07-22 | 巴斯夫欧洲公司 | 潜酸及其用途 |
KR102076529B1 (ko) * | 2012-06-29 | 2020-02-13 | 주식회사 다이셀 | 고분자 화합물, 포토레지스트용 수지 조성물, 및 반도체의 제조 방법 |
WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252427A (en) * | 1990-04-10 | 1993-10-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions |
JP3000745B2 (ja) * | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JPH05265212A (ja) * | 1992-03-17 | 1993-10-15 | Fujitsu Ltd | レジスト材料およびそれを用いるパターン形成方法 |
JPH05297591A (ja) * | 1992-04-20 | 1993-11-12 | Fujitsu Ltd | ポジ型放射線レジストとレジストパターンの形成方法 |
KR0153807B1 (ko) * | 1993-12-28 | 1998-11-16 | 세끼자와 다다시 | 방사선 감광재료 및 패턴형성방법 |
JP2776273B2 (ja) * | 1994-01-31 | 1998-07-16 | 日本電気株式会社 | ビニル基を有する単量体 |
EP0689098B1 (de) * | 1994-06-22 | 2000-08-16 | Ciba SC Holding AG | Positiv-Photoresist |
KR100195595B1 (ko) * | 1994-07-11 | 1999-06-15 | 니시무로 타이죠 | 감광성 재료 |
US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
US5863699A (en) * | 1995-10-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Photo-sensitive composition |
JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
KR100536824B1 (ko) * | 1996-03-07 | 2006-03-09 | 스미토모 베이클라이트 가부시키가이샤 | 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물 |
US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US6187504B1 (en) * | 1996-12-19 | 2001-02-13 | Jsr Corporation | Radiation sensitive resin composition |
KR100562180B1 (ko) * | 1997-01-29 | 2006-07-03 | 스미또모 가가꾸 가부시키가이샤 | 화학증폭형포지티브레지스트조성물 |
US6042991A (en) * | 1997-02-18 | 2000-03-28 | Fuji Photo Film Co., Ltd. | Positive working photosensitive composition |
-
1998
- 1998-05-08 EP EP98108461A patent/EP0877293B1/de not_active Expired - Lifetime
- 1998-05-08 DE DE69821049T patent/DE69821049T2/de not_active Expired - Lifetime
- 1998-05-09 KR KR1019980016647A patent/KR100516702B1/ko active IP Right Grant
- 1998-05-11 US US09/075,246 patent/US6479209B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0877293B1 (de) | 2004-01-14 |
EP0877293A3 (de) | 1999-06-23 |
US6479209B1 (en) | 2002-11-12 |
DE69821049T2 (de) | 2004-10-21 |
EP0877293A2 (de) | 1998-11-11 |
KR100516702B1 (ko) | 2006-01-27 |
KR19980086901A (ko) | 1998-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP |