BR0307501A - Derivados de sulfonato e o uso destes como ácidos latentes - Google Patents
Derivados de sulfonato e o uso destes como ácidos latentesInfo
- Publication number
- BR0307501A BR0307501A BR0307501-0A BR0307501A BR0307501A BR 0307501 A BR0307501 A BR 0307501A BR 0307501 A BR0307501 A BR 0307501A BR 0307501 A BR0307501 A BR 0307501A
- Authority
- BR
- Brazil
- Prior art keywords
- alkyl
- optionally substituted
- phenylene
- phenyl
- meanings given
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
- C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Hydrogenated Pyridines (AREA)
- Materials For Photolithography (AREA)
- Detergent Compositions (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Heterocyclic Compounds Containing Sulfur Atoms (AREA)
- Indole Compounds (AREA)
Abstract
"DERIVADOS DE SULFONATO E O USO DESTES COMO áCIDOS LATENTES". A presente invenção refere-se a composições fotorresistentes quimicamente amplificadas compreendendo, (a) um composto que cura sob a ação de um ácido ou um composto cuja solubilidade é aumentada sob a ação de um ácido; e (b) um composto da fórmula Ia, Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb ou Vla (Vla), em que n é 1 ou 2; m é 0 ou 1; X~ 0~ é -[CH~ 2~]~ h~-X ou -CH=CH~ 2~; h é 2, 3, 4, 5 ou 6; R~ 1~, quando n for 1, é, por exemplo, fenila opcionalmente substituída, naftila, antracila, fenantrila ou heteroarila; R~ 1~, quando n for 2, é,, por exemplo, fenileno ou naftileno opcionalmente substituído; R~ 2~, por exemplo, tem um dos significados de R~ 1~; X é,, por exemplo, -OR~ 20~, NR~ 21~R~ 22~ -SR~ 23~; X<39> é _x~ 1~_A~ 3~_X~ 2~_ ; São, por exemplo, -O-, -S- ou uma ligação direta; A~ 3~ é,, por exemplo, fenileno; R~ 3~ tem, por exemplo, um dos significados dados para R~ 1~; R~ 4~ tem, por exemplo, um dos significados dados para R~ 2~; R~ 5~ e R~ 6~, por exemplo, são hidrogênio; G i.a. é -S- ou -O-; R~ 7~, quando n for 1, por exemplo, é fenila, opcionalmente substituída, quando n for 2, é,, por exemplo, fenileno; R~ 8~ e R~ 9~, por exemplo, é C~ 1~-C~ 18~ alquila; R~ 10~ tem um dos significados dados para R~ 7~; R~ 11~ i.a. é C~ 1~-C~ 18~alquila; R~ 12~, R~ 13~, R~ 14~, R~ 15~ R~ 16~, R~ 17~ e R~ 18~, por exemplo, são hidrogênio ou C~ 1~-C~ 18~ alquila; R~ 20~, R~ 21~, R22 e R~ 23~ i.a. são fenila ou C~ 1~-C~ 18~alquila; dão alta resolução com bom perfil de resistentes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02405082 | 2002-02-06 | ||
PCT/EP2003/000821 WO2003067332A2 (en) | 2002-02-06 | 2003-01-28 | Sulfonate derivatives and the use therof as latent acids |
Publications (1)
Publication Number | Publication Date |
---|---|
BR0307501A true BR0307501A (pt) | 2004-12-07 |
Family
ID=27675790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR0307501-0A BR0307501A (pt) | 2002-02-06 | 2003-01-28 | Derivados de sulfonato e o uso destes como ácidos latentes |
Country Status (11)
Country | Link |
---|---|
US (2) | US7326511B2 (pt) |
EP (1) | EP1472576B1 (pt) |
JP (1) | JP2005517026A (pt) |
KR (1) | KR20040089607A (pt) |
CN (1) | CN100475798C (pt) |
AU (1) | AU2003206787A1 (pt) |
BR (1) | BR0307501A (pt) |
CA (1) | CA2474532A1 (pt) |
MX (1) | MXPA04006581A (pt) |
TW (1) | TWI288859B (pt) |
WO (1) | WO2003067332A2 (pt) |
Families Citing this family (30)
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KR20050083777A (ko) | 2002-10-16 | 2005-08-26 | 조지아 테크 리서치 코오포레이션 | 중합체, 그의 사용 방법, 및 그의 분해 방법 |
BRPI0407605A (pt) * | 2003-02-19 | 2006-02-14 | Ciba Sc Holding Ag | derivados de oxima halogenados e o uso dos mesmos como ácidos latentes |
EP1769286B1 (en) * | 2004-07-20 | 2015-09-09 | Basf Se | Oxime derivatives and the use therof as latent acids |
JP4924813B2 (ja) * | 2004-10-29 | 2012-04-25 | 日産化学工業株式会社 | 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター |
US7183036B2 (en) * | 2004-11-12 | 2007-02-27 | International Business Machines Corporation | Low activation energy positive resist |
JP4484681B2 (ja) * | 2004-12-03 | 2010-06-16 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
JP4780586B2 (ja) * | 2006-05-08 | 2011-09-28 | 旭化成イーマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
TW200804243A (en) * | 2006-06-20 | 2008-01-16 | Ciba Sc Holding Ag | Oxime sulfonates and the use thereof as latent acids |
CN101506734B (zh) * | 2006-08-24 | 2012-04-11 | 西巴控股有限公司 | Uv量指示剂 |
JP4866783B2 (ja) * | 2007-04-27 | 2012-02-01 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
GB2450975B (en) | 2007-07-12 | 2010-02-24 | Ciba Holding Inc | Yellow radiation curing inks |
EP2297613B1 (en) * | 2008-05-23 | 2017-11-29 | Cornell University | Orthogonal processing of organic materials used in electronic and electrical devices |
TW201016651A (en) * | 2008-07-28 | 2010-05-01 | Sumitomo Chemical Co | Oxime compound and resist composition containing the same |
KR20110134452A (ko) * | 2009-03-06 | 2011-12-14 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전기활성 층을 형성하기 위한 방법 |
EP2414894B1 (en) | 2009-03-30 | 2014-02-12 | Basf Se | Uv-dose indicator films |
WO2011104127A1 (en) * | 2010-02-24 | 2011-09-01 | Basf Se | Latent acids and their use |
TWI550338B (zh) * | 2010-08-30 | 2016-09-21 | 富士軟片股份有限公司 | 感光性樹脂組成物、肟基磺酸酯化合物、硬化膜之形成方法、硬化膜、有機el顯示裝置、及液晶顯示裝置 |
WO2012098952A1 (ja) * | 2011-01-17 | 2012-07-26 | 株式会社クラレ | ビニルスルホン酸エステル誘導体、高分子化合物およびフォトレジスト組成物 |
US9145383B2 (en) | 2012-08-10 | 2015-09-29 | Hallstar Innovations Corp. | Compositions, apparatus, systems, and methods for resolving electronic excited states |
US9125829B2 (en) | 2012-08-17 | 2015-09-08 | Hallstar Innovations Corp. | Method of photostabilizing UV absorbers, particularly dibenzyolmethane derivatives, e.g., Avobenzone, with cyano-containing fused tricyclic compounds |
WO2014025370A1 (en) | 2012-08-10 | 2014-02-13 | Hallstar Innovations Corp. | Tricyclic energy quencher compounds for reducing singlet oxygen generation |
JP6592896B2 (ja) * | 2014-01-10 | 2019-10-23 | 住友化学株式会社 | 樹脂及びレジスト組成物 |
JP6904662B2 (ja) * | 2016-01-29 | 2021-07-21 | 株式会社アドテックエンジニアリング | 露光装置 |
US9950999B2 (en) | 2016-08-12 | 2018-04-24 | International Business Machines Corporation | Non-ionic low diffusing photo-acid generators |
NZ763766A (en) | 2017-03-20 | 2023-07-28 | Novo Nordisk Healthcare Ag | Pyrrolopyrrole compositions as pyruvate kinase (pkr) activators |
JP7450610B2 (ja) | 2018-09-19 | 2024-03-15 | ノヴォ・ノルディスク・ヘルス・ケア・アーゲー | ピルビン酸キナーゼrの活性化 |
BR112021005188A2 (pt) | 2018-09-19 | 2021-06-08 | Forma Therapeutics, Inc. | tratamento de anemia falciforme com um composto de ativação de piruvato cinase r |
IT201900022233A1 (it) * | 2019-11-27 | 2021-05-27 | Epta Inks S P A | Inchiostro fotosensibile e embossabile |
JP7041201B2 (ja) * | 2020-06-30 | 2022-03-23 | 株式会社アドテックエンジニアリング | 露光方法 |
CN117042327B (zh) * | 2022-12-27 | 2024-01-30 | 珠海浩奕电子科技有限公司 | 一种高强度低介电常数印刷电路板及其制备工艺 |
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TWI272451B (en) | 2000-09-25 | 2007-02-01 | Ciba Sc Holding Ag | Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition |
JP4210439B2 (ja) * | 2001-04-05 | 2009-01-21 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
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-
2003
- 2003-01-28 EP EP03704479.9A patent/EP1472576B1/en not_active Expired - Lifetime
- 2003-01-28 CN CNB038033054A patent/CN100475798C/zh not_active Expired - Fee Related
- 2003-01-28 WO PCT/EP2003/000821 patent/WO2003067332A2/en active Application Filing
- 2003-01-28 KR KR10-2004-7012252A patent/KR20040089607A/ko not_active Application Discontinuation
- 2003-01-28 MX MXPA04006581A patent/MXPA04006581A/es not_active Application Discontinuation
- 2003-01-28 BR BR0307501-0A patent/BR0307501A/pt not_active Application Discontinuation
- 2003-01-28 US US10/495,710 patent/US7326511B2/en not_active Expired - Fee Related
- 2003-01-28 JP JP2003566624A patent/JP2005517026A/ja active Pending
- 2003-01-28 AU AU2003206787A patent/AU2003206787A1/en not_active Abandoned
- 2003-01-28 CA CA002474532A patent/CA2474532A1/en not_active Abandoned
- 2003-01-30 TW TW092102265A patent/TWI288859B/zh not_active IP Right Cessation
-
2007
- 2007-12-04 US US11/999,116 patent/US20080286693A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050153244A1 (en) | 2005-07-14 |
CN1628268A (zh) | 2005-06-15 |
EP1472576A2 (en) | 2004-11-03 |
CN100475798C (zh) | 2009-04-08 |
TWI288859B (en) | 2007-10-21 |
AU2003206787A8 (en) | 2003-09-02 |
EP1472576B1 (en) | 2013-04-24 |
MXPA04006581A (es) | 2004-10-04 |
CA2474532A1 (en) | 2003-08-14 |
TW200302952A (en) | 2003-08-16 |
US20080286693A1 (en) | 2008-11-20 |
WO2003067332A2 (en) | 2003-08-14 |
JP2005517026A (ja) | 2005-06-09 |
WO2003067332A3 (en) | 2003-12-24 |
US7326511B2 (en) | 2008-02-05 |
AU2003206787A1 (en) | 2003-09-02 |
KR20040089607A (ko) | 2004-10-21 |
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