DE69718118D1 - Positiv arbeitende photoempfindliche Zusammensetzung - Google Patents
Positiv arbeitende photoempfindliche ZusammensetzungInfo
- Publication number
- DE69718118D1 DE69718118D1 DE69718118T DE69718118T DE69718118D1 DE 69718118 D1 DE69718118 D1 DE 69718118D1 DE 69718118 T DE69718118 T DE 69718118T DE 69718118 T DE69718118 T DE 69718118T DE 69718118 D1 DE69718118 D1 DE 69718118D1
- Authority
- DE
- Germany
- Prior art keywords
- positive
- photosensitive composition
- working photosensitive
- working
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D213/62—Oxygen or sulfur atoms
- C07D213/63—One oxygen atom
- C07D213/64—One oxygen atom attached in position 2 or 6
- C07D213/643—2-Phenoxypyridines; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D498/04—Ortho-condensed systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
- Y10S430/121—Nitrogen in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25051896A JP3679205B2 (ja) | 1996-09-20 | 1996-09-20 | ポジ型感光性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69718118D1 true DE69718118D1 (de) | 2003-02-06 |
DE69718118T2 DE69718118T2 (de) | 2003-10-16 |
Family
ID=17209093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69718118T Expired - Lifetime DE69718118T2 (de) | 1996-09-20 | 1997-09-19 | Positiv arbeitende photoempfindliche Zusammensetzung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5981140A (de) |
EP (1) | EP0831369B1 (de) |
JP (1) | JP3679205B2 (de) |
KR (1) | KR100549702B1 (de) |
DE (1) | DE69718118T2 (de) |
TW (1) | TW482945B (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3645365B2 (ja) * | 1996-08-15 | 2005-05-11 | 富士写真フイルム株式会社 | 遠紫外線露光用感光性樹脂組成物 |
JP3955384B2 (ja) * | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
US6280911B1 (en) | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
US6200728B1 (en) * | 1999-02-20 | 2001-03-13 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of photoacid generators |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP3285086B2 (ja) | 1999-05-20 | 2002-05-27 | 日本電気株式会社 | 化学増幅型レジスト組成物 |
KR100320773B1 (ko) * | 1999-05-31 | 2002-01-17 | 윤종용 | 포토레지스트 조성물 |
US6187506B1 (en) * | 1999-08-05 | 2001-02-13 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
JP4007569B2 (ja) * | 1999-09-06 | 2007-11-14 | 富士フイルム株式会社 | ポジ型電子線又はx線レジスト組成物 |
IL139513A (en) * | 1999-11-09 | 2004-12-15 | Jsr Corp | N -sulfonylaxamide and radiation-resistant resins that use these compounds |
TW548520B (en) * | 2000-02-18 | 2003-08-21 | Fuji Photo Film Co Ltd | Positive resist composition for X-rays or electron beams |
TW594383B (en) * | 2001-02-21 | 2004-06-21 | Fuji Photo Film Co Ltd | Positive resist composition for electron beam |
TW565748B (en) * | 2001-05-17 | 2003-12-11 | Fuji Photo Film Co Ltd | Positive radiation-sensitive composition |
US6927009B2 (en) * | 2001-05-22 | 2005-08-09 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JP3771815B2 (ja) * | 2001-05-31 | 2006-04-26 | 東京応化工業株式会社 | 感光性積層体、それに用いるポジ型レジスト組成物及びそれらを用いるレジストパターン形成方法 |
JP4595275B2 (ja) * | 2001-09-28 | 2010-12-08 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP3901997B2 (ja) | 2001-11-27 | 2007-04-04 | 富士通株式会社 | レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
JP4410977B2 (ja) * | 2002-07-09 | 2010-02-10 | 富士通株式会社 | 化学増幅レジスト材料及びそれを用いたパターニング方法 |
JP4253486B2 (ja) * | 2002-09-25 | 2009-04-15 | 富士フイルム株式会社 | ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 |
JP4121396B2 (ja) * | 2003-03-05 | 2008-07-23 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4360844B2 (ja) * | 2003-06-16 | 2009-11-11 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US7393627B2 (en) * | 2004-03-16 | 2008-07-01 | Cornell Research Foundation, Inc. | Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS) |
TWI512402B (zh) | 2005-11-25 | 2015-12-11 | Jsr Corp | Sensitive radiation linear resin composition |
WO2007124092A2 (en) | 2006-04-21 | 2007-11-01 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
KR101347284B1 (ko) * | 2007-09-28 | 2014-01-07 | 삼성전자주식회사 | 광산발생제 및 이를 포함하는 화학증폭형 레지스트 조성물 |
US8163461B2 (en) * | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
CN102781911B (zh) | 2010-02-24 | 2015-07-22 | 巴斯夫欧洲公司 | 潜酸及其用途 |
CN103454857B (zh) | 2012-05-31 | 2020-01-03 | 住友化学株式会社 | 光致抗蚀剂组合物 |
JP6539760B2 (ja) * | 2012-12-26 | 2019-07-03 | 東京応化工業株式会社 | 化合物 |
KR20140131609A (ko) * | 2013-05-02 | 2014-11-14 | 삼성디스플레이 주식회사 | 감광성 수지 조성물, 패턴 형성 방법 및 이를 이용한 액정 표시 장치 |
WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
KR20220055289A (ko) * | 2020-10-26 | 2022-05-03 | 삼성전자주식회사 | 포토레지스트 조성물, 그를 이용한 패턴의 형성 방법 및 그를 이용한 반도체 장치의 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4214363C2 (de) * | 1991-04-30 | 1998-01-29 | Toshiba Kawasaki Kk | Strahlungsempfindliches Gemisch zur Ausbildung von Mustern |
US5550004A (en) * | 1992-05-06 | 1996-08-27 | Ocg Microelectronic Materials, Inc. | Chemically amplified radiation-sensitive composition |
JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
US5663035A (en) * | 1994-04-13 | 1997-09-02 | Hoechst Japan Limited | Radiation-sensitive mixture comprising a basic iodonium compound |
JPH08101507A (ja) * | 1994-09-30 | 1996-04-16 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
JP3549592B2 (ja) * | 1994-11-02 | 2004-08-04 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
-
1996
- 1996-09-20 JP JP25051896A patent/JP3679205B2/ja not_active Expired - Fee Related
-
1997
- 1997-09-17 US US08/932,168 patent/US5981140A/en not_active Expired - Lifetime
- 1997-09-17 TW TW086113455A patent/TW482945B/zh not_active IP Right Cessation
- 1997-09-19 DE DE69718118T patent/DE69718118T2/de not_active Expired - Lifetime
- 1997-09-19 EP EP97116374A patent/EP0831369B1/de not_active Expired - Lifetime
- 1997-09-20 KR KR1019970047954A patent/KR100549702B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5981140A (en) | 1999-11-09 |
DE69718118T2 (de) | 2003-10-16 |
JP3679205B2 (ja) | 2005-08-03 |
JPH1097060A (ja) | 1998-04-14 |
KR100549702B1 (ko) | 2006-04-12 |
TW482945B (en) | 2002-04-11 |
EP0831369B1 (de) | 2003-01-02 |
EP0831369A2 (de) | 1998-03-25 |
EP0831369A3 (de) | 1998-08-19 |
KR19980024818A (ko) | 1998-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP |