TW350040B - Positive resist composition containing a 1,2-naphthoquinonediazide compound and a novolac resin - Google Patents

Positive resist composition containing a 1,2-naphthoquinonediazide compound and a novolac resin

Info

Publication number
TW350040B
TW350040B TW083110067A TW83110067A TW350040B TW 350040 B TW350040 B TW 350040B TW 083110067 A TW083110067 A TW 083110067A TW 83110067 A TW83110067 A TW 83110067A TW 350040 B TW350040 B TW 350040B
Authority
TW
Taiwan
Prior art keywords
phenol
compound
phenol compound
novolac resin
methylphenol
Prior art date
Application number
TW083110067A
Other languages
English (en)
Inventor
Kazuhiko Hashimoto
Haruki Ozaki
Yasunori Kamiya
Original Assignee
Sumiyomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumiyomo Chemical Co Ltd filed Critical Sumiyomo Chemical Co Ltd
Application granted granted Critical
Publication of TW350040B publication Critical patent/TW350040B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW083110067A 1993-11-08 1994-11-02 Positive resist composition containing a 1,2-naphthoquinonediazide compound and a novolac resin TW350040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27822593A JP3319092B2 (ja) 1993-11-08 1993-11-08 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
TW350040B true TW350040B (en) 1999-01-11

Family

ID=17594364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110067A TW350040B (en) 1993-11-08 1994-11-02 Positive resist composition containing a 1,2-naphthoquinonediazide compound and a novolac resin

Country Status (7)

Country Link
US (1) US5792586A (zh)
EP (1) EP0652484B1 (zh)
JP (1) JP3319092B2 (zh)
KR (1) KR100334145B1 (zh)
CA (1) CA2135250A1 (zh)
DE (1) DE69413925T2 (zh)
TW (1) TW350040B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
KR102482878B1 (ko) 2017-09-26 2022-12-29 삼성전자 주식회사 집적회로 소자의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123279A (en) * 1974-03-25 1978-10-31 Fuji Photo Film Co., Ltd. Light-sensitive o-quinonediazide containing planographic printing plate
JPH0656487B2 (ja) * 1986-05-02 1994-07-27 東京応化工業株式会社 ポジ型ホトレジスト用組成物
US4797345A (en) * 1987-07-01 1989-01-10 Olin Hunt Specialty Products, Inc. Light-sensitive 1,2-naphthoquinone-2-diazide-4-sulfonic acid monoesters of cycloalkyl substituted phenol and their use in light-sensitive mixtures
NO891063L (no) * 1988-03-31 1989-10-02 Thiokol Morton Inc Novolakharpikser av blandede aldehyder og positive fotoresistmaterialer fremstilt fra slike harpikser.
US5238771A (en) * 1988-05-31 1993-08-24 Konica Corporation Lithographic printing plate utilizing aluminum substrate with photosensitive layer containing o-naphthoquinonediazide sulfonic acid ester, alkali soluble resin and select additive
JPH03274054A (ja) * 1990-03-23 1991-12-05 Konica Corp 感光性組成物
JP3182823B2 (ja) * 1991-12-27 2001-07-03 住友化学工業株式会社 ポジ型レジスト組成物
JPH05188590A (ja) * 1992-01-16 1993-07-30 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH05222146A (ja) * 1992-02-14 1993-08-31 Daikin Ind Ltd 硬質ポリウレタンフォームの製造法

Also Published As

Publication number Publication date
KR950014985A (ko) 1995-06-16
CA2135250A1 (en) 1995-05-09
KR100334145B1 (ko) 2002-11-29
DE69413925D1 (de) 1998-11-19
DE69413925T2 (de) 1999-04-29
EP0652484A2 (en) 1995-05-10
US5792586A (en) 1998-08-11
EP0652484A3 (en) 1996-01-17
EP0652484B1 (en) 1998-10-14
JP3319092B2 (ja) 2002-08-26
JPH07128849A (ja) 1995-05-19

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