DE69117353D1 - Verfahren zur schnellen thermischen Behandlung zur Erhaltung von Silikatglasbeschichtungen - Google Patents
Verfahren zur schnellen thermischen Behandlung zur Erhaltung von SilikatglasbeschichtungenInfo
- Publication number
- DE69117353D1 DE69117353D1 DE69117353T DE69117353T DE69117353D1 DE 69117353 D1 DE69117353 D1 DE 69117353D1 DE 69117353 T DE69117353 T DE 69117353T DE 69117353 T DE69117353 T DE 69117353T DE 69117353 D1 DE69117353 D1 DE 69117353D1
- Authority
- DE
- Germany
- Prior art keywords
- maintain
- thermal treatment
- silicate glass
- rapid thermal
- glass coatings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000576 coating method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000005368 silicate glass Substances 0.000 title 1
- 238000007669 thermal treatment Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Structural Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
- Consolidation Of Soil By Introduction Of Solidifying Substances Into Soil (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/539,249 US5059448A (en) | 1990-06-18 | 1990-06-18 | Rapid thermal process for obtaining silica coatings |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69117353D1 true DE69117353D1 (de) | 1996-04-04 |
DE69117353T2 DE69117353T2 (de) | 1996-09-05 |
Family
ID=24150433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69117353T Expired - Fee Related DE69117353T2 (de) | 1990-06-18 | 1991-05-31 | Verfahren zur schnellen thermischen Behandlung zur Erhaltung von Silikatglasbeschichtungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US5059448A (de) |
EP (1) | EP0462715B1 (de) |
JP (1) | JP2561979B2 (de) |
KR (2) | KR950001671B1 (de) |
CA (1) | CA2043411A1 (de) |
DE (1) | DE69117353T2 (de) |
ES (1) | ES2086485T3 (de) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5290399A (en) * | 1991-02-05 | 1994-03-01 | Advanced Micro Devices, Inc. | Surface planarizing methods for integrated circuit devices |
US5445894A (en) * | 1991-04-22 | 1995-08-29 | Dow Corning Corporation | Ceramic coatings |
US5339211A (en) * | 1991-05-02 | 1994-08-16 | Dow Corning Corporation | Variable capacitor |
US5436029A (en) * | 1992-07-13 | 1995-07-25 | Dow Corning Corporation | Curing silicon hydride containing materials by exposure to nitrous oxide |
JP3210457B2 (ja) * | 1992-12-14 | 2001-09-17 | ダウ・コ−ニング・コ−ポレ−ション | 酸化ケイ素膜の形成方法 |
US5258334A (en) * | 1993-01-15 | 1993-11-02 | The U.S. Government As Represented By The Director, National Security Agency | Process of preventing visual access to a semiconductor device by applying an opaque ceramic coating to integrated circuit devices |
US5458912A (en) * | 1993-03-08 | 1995-10-17 | Dow Corning Corporation | Tamper-proof electronic coatings |
JP3418458B2 (ja) * | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
JP2739902B2 (ja) * | 1993-09-30 | 1998-04-15 | 東京応化工業株式会社 | 酸化ケイ素系被膜形成用塗布液 |
WO1995018190A1 (en) | 1993-12-27 | 1995-07-06 | Kawasaki Steel Corporation | Isolation film of semiconductor device, coating fluid for forming the film, and process for producing the film |
KR950034495A (ko) * | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
JP3743519B2 (ja) * | 1994-10-18 | 2006-02-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | シリコン−酸化物薄層の製造方法 |
US5530293A (en) * | 1994-11-28 | 1996-06-25 | International Business Machines Corporation | Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits |
US5508238A (en) * | 1995-05-11 | 1996-04-16 | Dow Corning Corporation | Monolithic ceramic bodies using modified hydrogen silsesquioxane resin |
JP3070450B2 (ja) * | 1995-07-14 | 2000-07-31 | ヤマハ株式会社 | 多層配線形成法 |
JP3149739B2 (ja) * | 1995-07-14 | 2001-03-26 | ヤマハ株式会社 | 多層配線形成法 |
JP3696939B2 (ja) * | 1995-08-11 | 2005-09-21 | 東京応化工業株式会社 | シリカ系被膜の形成方法 |
EP0764704B1 (de) * | 1995-09-25 | 2000-03-08 | Dow Corning Corporation | Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik |
US5609925A (en) | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
JPH09237785A (ja) * | 1995-12-28 | 1997-09-09 | Toshiba Corp | 半導体装置およびその製造方法 |
JP3123449B2 (ja) * | 1996-11-01 | 2001-01-09 | ヤマハ株式会社 | 多層配線形成法 |
JP3082688B2 (ja) * | 1996-11-05 | 2000-08-28 | ヤマハ株式会社 | 配線形成法 |
JP3225872B2 (ja) | 1996-12-24 | 2001-11-05 | ヤマハ株式会社 | 酸化シリコン膜形成法 |
JPH10247686A (ja) * | 1996-12-30 | 1998-09-14 | Yamaha Corp | 多層配線形成法 |
US6239441B1 (en) | 1997-01-20 | 2001-05-29 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device |
EP0860462A3 (de) * | 1997-02-24 | 1999-04-21 | Dow Corning Toray Silicone Company Limited | Zusammensetzung und Verfahren zur Erzeugung dünner Siliciumdioxidfilme |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
JP3909912B2 (ja) * | 1997-05-09 | 2007-04-25 | 東京応化工業株式会社 | シリカ系厚膜被膜形成方法 |
EP0881668A3 (de) | 1997-05-28 | 2000-11-15 | Dow Corning Toray Silicone Company, Ltd. | Abscheidung eines elektrisch isolierenden Dünnfilms mit einer niedrigen Dielektrizitätskonstante |
US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
US6030904A (en) * | 1997-08-21 | 2000-02-29 | International Business Machines Corporation | Stabilization of low-k carbon-based dielectrics |
US5935650A (en) * | 1997-10-17 | 1999-08-10 | Lerch; Wilfried | Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system |
TW439197B (en) * | 1997-10-31 | 2001-06-07 | Dow Corning | Electronic coating having low dielectric constant |
US6018002A (en) * | 1998-02-06 | 2000-01-25 | Dow Corning Corporation | Photoluminescent material from hydrogen silsesquioxane resin |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US6417115B1 (en) * | 1998-05-26 | 2002-07-09 | Axeclis Technologies, Inc. | Treatment of dielectric materials |
US5935638A (en) * | 1998-08-06 | 1999-08-10 | Dow Corning Corporation | Silicon dioxide containing coating |
US6124164A (en) * | 1998-09-17 | 2000-09-26 | Micron Technology, Inc. | Method of making integrated capacitor incorporating high K dielectric |
AU5600200A (en) * | 1999-06-10 | 2001-01-02 | Allied-Signal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US20060263531A1 (en) * | 2003-12-18 | 2006-11-23 | Lichtenhan Joseph D | Polyhedral oligomeric silsesquioxanes as glass forming coatings |
US6358841B1 (en) | 1999-08-23 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Method of copper CMP on low dielectric constant HSQ material |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
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US4822697A (en) * | 1986-12-03 | 1989-04-18 | Dow Corning Corporation | Platinum and rhodium catalysis of low temperature formation multilayer ceramics |
US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
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JP2624254B2 (ja) * | 1987-05-22 | 1997-06-25 | 東京応化工業株式会社 | シリカ系被膜の膜質改善方法 |
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US4885186A (en) * | 1988-12-29 | 1989-12-05 | Bell Communications Research, Inc. | Method for preparation of silicate glasses of controlled index of refraction |
US4911942A (en) * | 1989-01-13 | 1990-03-27 | Asama Chemical Co., Ltd. | Stabilized oil and fat powder |
CA2010335A1 (en) * | 1989-03-09 | 1990-09-09 | Ronald H. Baney | Method for protective coating superconductors |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
-
1990
- 1990-06-18 US US07/539,249 patent/US5059448A/en not_active Expired - Fee Related
-
1991
- 1991-05-28 CA CA002043411A patent/CA2043411A1/en not_active Abandoned
- 1991-05-31 EP EP91304930A patent/EP0462715B1/de not_active Expired - Lifetime
- 1991-05-31 ES ES91304930T patent/ES2086485T3/es not_active Expired - Lifetime
- 1991-05-31 DE DE69117353T patent/DE69117353T2/de not_active Expired - Fee Related
- 1991-06-13 KR KR1019910009913A patent/KR950001671B1/ko not_active IP Right Cessation
- 1991-06-15 KR KR1019910009913A patent/KR920000663A/ko not_active IP Right Cessation
- 1991-06-17 JP JP3144617A patent/JP2561979B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR950001671B1 (ko) | 1995-02-28 |
KR920000663A (ko) | 1992-01-29 |
EP0462715B1 (de) | 1996-02-28 |
DE69117353T2 (de) | 1996-09-05 |
ES2086485T3 (es) | 1996-07-01 |
US5059448A (en) | 1991-10-22 |
EP0462715A1 (de) | 1991-12-27 |
KR930000800A (ko) | 1993-01-15 |
CA2043411A1 (en) | 1991-12-19 |
JP2561979B2 (ja) | 1996-12-11 |
JPH04298542A (ja) | 1992-10-22 |
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