KR940005519A - 실리카 함유 세라믹 피복물을 기질 위에 형성시키는 방법 - Google Patents
실리카 함유 세라믹 피복물을 기질 위에 형성시키는 방법Info
- Publication number
- KR940005519A KR940005519A KR1019930013106A KR930013106A KR940005519A KR 940005519 A KR940005519 A KR 940005519A KR 1019930013106 A KR1019930013106 A KR 1019930013106A KR 930013106 A KR930013106 A KR 930013106A KR 940005519 A KR940005519 A KR 940005519A
- Authority
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- South Korea
- Prior art keywords
- substrate
- resin
- silicon hydride
- ceramic coating
- silica
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract 8
- 238000005524 ceramic coating Methods 0.000 title claims abstract 6
- 239000011347 resin Substances 0.000 claims abstract 11
- 229920005989 resin Polymers 0.000 claims abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 10
- 238000000034 method Methods 0.000 claims abstract 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract 7
- 229910052990 silicon hydride Inorganic materials 0.000 claims abstract 7
- 238000000576 coating method Methods 0.000 claims abstract 6
- 239000011248 coating agent Substances 0.000 claims abstract 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract 4
- 239000001272 nitrous oxide Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 239000004215 Carbon black (E152) Chemical group 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 125000004423 acyloxy group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229930195733 hydrocarbon Chemical group 0.000 claims 1
- 150000002430 hydrocarbons Chemical group 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000011253 protective coating Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
- C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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Abstract
본 발명은 저온에서 실리카 함유 세라믹 피복물을 기질 위에 형성시키는 방법에 관한 것이다. 당해 방법은 수소화 규소함유 수지를 포함하는 피복재를 기질 위에 도포한 다음, 이와 같이 도포된 기질을, 당해 수지를 실리카 함유 세라믹 피복물로 전환시키기에 충분한 온도에서 아산화질소 함유 환경하에 가열시킴을 포함한다. 당해 방법은 전자 장치 위에 보호용 피복물 및 유전 피복물을 형성시키는데 특히 유용하다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (9)
- 다음 일반식의 수소화규소 수지를 포함하는 피복재를 기질 위에 도포한 다음, 이와 같이 도포된 기질을, 당해 수소화규소 수지 피복재를 실리카 함유 세리믹 피복재로 전환시키기에 충분한 온도에서 아산화질소 함유 대기하에 가열시킴을 포함하여, 실리카 함유 세리믹 피복물을 기질 위에 형성시키는 방법.(SiO2)x(RSiO3/2)y(R2SiO)Z상기식에서, R은 독립적으로 수소 또는 탄소수 1 내지 20의 탄화수소이고, y는 0.05 내지 1의 몰 분획이며 x 및 z는 0 내지 0. 95의 몰 분획인데, 단 R 그룹의 20% 이상은 수소이다.
- 제1항에 있어서, 당해 수소화규소 수지가 하이드로젠실세스퀴옥산 수지 또는 (HSiO3/2)y(H2SiO)Z인 방법.
- 제1항에 있어서, 도포된 기질이 1 내지 3시간 동안 100 내지 600℃의 온도 범위에서 가열되는 방법.
- 제2항에 있어서, 당해 수소화규소 수지가, 중합체성 단위의 75% 이상의 수평균 분자랑이 1,200 내지 100,000으로 되도록 분획화된 하이드로젠 실세스퀴옥산 수지인 방법.
- 제1항에 있어서, 당해 수소화규소 수지 피복재가 티타늄, 지르코늄, 알루미늄 탄탈늄, 바나륨, 니오븀, 불소 및 인으로 이루어진 그룹 중에서 선택된 원소를 함유하는 화합물(여기서, 이러한 화합물은 알콕시 및 아실옥시로 이루어진 그룹 중에서 선택된 가수분해가능한 치환제를 하나 이상 함유하고, 실리카 함유 세라믹 피복재가 개질용 세라믹 산화물을 0.1 내지 30중량% 함유하는 정도의 양으로 존재한다)을 포함하는 개질용 세라믹 산화물 전구체를 추가로 함유하는 방법.
- 제1항에 있어서, 당해 수소화규소 수지 피복재가 수지의 중량을 기준으로 하여 백금 또는 로듐 5 내지 500ppm의 양으로 백금 또는 로듐 촉매를 추가로 함유하는 방법.
- 제1항에 있어서, 가열 대기가 불활성 대기를 추가로 함유하는 방법.
- 제1항에 있어서, 가열 대기가 부가의 반응성 기체를 추가로 함유하는 방법.
- 제1항에 있어서, 가열 대기가 수증기를 추가로 함유하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91243692A | 1992-07-13 | 1992-07-13 | |
US7/912,436 | 1992-07-13 | ||
US7/994,225 | 1992-12-21 | ||
US07/994,225 US5436029A (en) | 1992-07-13 | 1992-12-21 | Curing silicon hydride containing materials by exposure to nitrous oxide |
Publications (2)
Publication Number | Publication Date |
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KR940005519A true KR940005519A (ko) | 1994-03-21 |
KR100251819B1 KR100251819B1 (ko) | 2000-04-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019930013106A KR100251819B1 (ko) | 1992-07-13 | 1993-07-13 | 실리카 함유 세라믹 피복물을 기질 위에 형성시키는 방법 |
Country Status (7)
Country | Link |
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US (1) | US5436029A (ko) |
EP (1) | EP0579456B1 (ko) |
JP (1) | JP3298990B2 (ko) |
KR (1) | KR100251819B1 (ko) |
CA (1) | CA2100278A1 (ko) |
DE (1) | DE69311639T2 (ko) |
TW (1) | TW252054B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100371436B1 (ko) * | 1999-07-30 | 2003-02-07 | 이형찬 | 자동 또는 수동으로 채널 선택이 가능한 무선 헤드폰 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5380555A (en) * | 1993-02-09 | 1995-01-10 | Dow Corning Toray Silicone Co., Ltd. | Methods for the formation of a silicon oxide film |
US5547703A (en) * | 1994-04-11 | 1996-08-20 | Dow Corning Corporation | Method of forming si-o containing coatings |
US5508238A (en) * | 1995-05-11 | 1996-04-16 | Dow Corning Corporation | Monolithic ceramic bodies using modified hydrogen silsesquioxane resin |
US5609925A (en) * | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
US5707683A (en) * | 1996-02-22 | 1998-01-13 | Dow Corning Corporation | Electronic coating composition method of coating an electronic substrate, composition and article |
US5707681A (en) * | 1997-02-07 | 1998-01-13 | Dow Corning Corporation | Method of producing coatings on electronic substrates |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
TW392288B (en) * | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
DE19756325A1 (de) * | 1997-12-18 | 1999-07-01 | Daimler Chrysler Ag | Halbleiterscheibe mit integrierten Einzelbauelementen, Verfahren und Vorrichtung zur Herstellung einer Halbleiterscheibe |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US6218020B1 (en) * | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
SE521977C2 (sv) * | 2002-06-20 | 2003-12-23 | Mobile Media Group Stockholm A | Metod och apparat för att formatera en webbtjänst |
CN101185160A (zh) * | 2005-06-15 | 2008-05-21 | 陶氏康宁公司 | 固化氢倍半硅氧烷和在纳米级沟槽内致密化的方法 |
JP5043317B2 (ja) * | 2005-08-05 | 2012-10-10 | 東レ・ダウコーニング株式会社 | 環状ジハイドロジェンポリシロキサン、ハイドロジェンポリシロキサン、それらの製造方法、シリカ系ガラス成形体およびその製造方法、光学素子およびその製造方法 |
JP4783117B2 (ja) * | 2005-10-21 | 2011-09-28 | 東レ・ダウコーニング株式会社 | シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置 |
JP2008260917A (ja) * | 2007-03-16 | 2008-10-30 | Jsr Corp | 膜形成用組成物およびシリカ系膜とその形成方法 |
WO2008114835A1 (ja) * | 2007-03-16 | 2008-09-25 | Jsr Corporation | 膜形成用組成物およびシリ力系膜とその形成方法 |
JP2008260918A (ja) * | 2007-03-16 | 2008-10-30 | Jsr Corp | 膜形成用組成物およびシリカ系膜とその形成方法 |
JP5313478B2 (ja) * | 2007-10-05 | 2013-10-09 | 東レ・ダウコーニング株式会社 | セラミック状酸化ケイ素系被膜の形成方法、セラミック状酸化ケイ素系被膜を有する無機質基材の製造方法、セラミック状酸化ケイ素系被膜形成剤および半導体装置 |
KR20100109939A (ko) * | 2008-02-01 | 2010-10-11 | 제이에스알 가부시끼가이샤 | 트렌치 아이솔레이션의 형성 방법 |
KR100963224B1 (ko) | 2009-02-03 | 2010-06-10 | (주) 더몰론코리아 | 물 또는 공기 중에서 겸용 사용이 가능한 세라믹 코팅 히터 |
KR101236491B1 (ko) | 2011-03-08 | 2013-02-22 | (주)우드케어 | 상온에서 경화가 가능한 세라믹 도료 조성물 |
US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
JPS6377139A (ja) * | 1986-09-19 | 1988-04-07 | Fujitsu Ltd | 絶縁膜の形成方法 |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5262201A (en) * | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
US5145723A (en) * | 1991-06-05 | 1992-09-08 | Dow Corning Corporation | Process for coating a substrate with silica |
-
1992
- 1992-12-21 US US07/994,225 patent/US5436029A/en not_active Expired - Fee Related
-
1993
- 1993-07-08 EP EP93305375A patent/EP0579456B1/en not_active Expired - Lifetime
- 1993-07-08 DE DE69311639T patent/DE69311639T2/de not_active Expired - Fee Related
- 1993-07-12 CA CA002100278A patent/CA2100278A1/en not_active Abandoned
- 1993-07-13 KR KR1019930013106A patent/KR100251819B1/ko not_active IP Right Cessation
- 1993-07-13 JP JP17296893A patent/JP3298990B2/ja not_active Expired - Fee Related
- 1993-07-15 TW TW082105635A patent/TW252054B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100371436B1 (ko) * | 1999-07-30 | 2003-02-07 | 이형찬 | 자동 또는 수동으로 채널 선택이 가능한 무선 헤드폰 |
Also Published As
Publication number | Publication date |
---|---|
EP0579456A2 (en) | 1994-01-19 |
DE69311639T2 (de) | 1998-01-22 |
KR100251819B1 (ko) | 2000-04-15 |
EP0579456A3 (ko) | 1994-04-20 |
CA2100278A1 (en) | 1994-01-14 |
US5436029A (en) | 1995-07-25 |
DE69311639D1 (de) | 1997-07-24 |
TW252054B (ko) | 1995-07-21 |
JP3298990B2 (ja) | 2002-07-08 |
EP0579456B1 (en) | 1997-06-18 |
JPH06191970A (ja) | 1994-07-12 |
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