TW252054B - - Google Patents
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- Publication number
- TW252054B TW252054B TW082105635A TW82105635A TW252054B TW 252054 B TW252054 B TW 252054B TW 082105635 A TW082105635 A TW 082105635A TW 82105635 A TW82105635 A TW 82105635A TW 252054 B TW252054 B TW 252054B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- patent application
- item
- silane
- substrate
- Prior art date
Links
- 239000011347 resin Substances 0.000 claims description 60
- 229920005989 resin Polymers 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 28
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 24
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 229910000077 silane Inorganic materials 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000001272 nitrous oxide Substances 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000005524 ceramic coating Methods 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 6
- 239000003973 paint Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 238000009933 burial Methods 0.000 claims 1
- 150000002632 lipids Chemical class 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- -1 for example Polymers 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000007062 hydrolysis Effects 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- USXDFAGDIOXNML-UHFFFAOYSA-N Fulminate Chemical compound [O-][N+]#[C-] USXDFAGDIOXNML-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000002079 cooperative effect Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- XNMPJDZAHSMAMN-UHFFFAOYSA-N 1-methyl-2-(2-methylpropyl)benzene Chemical compound CC(C)CC1=CC=CC=C1C XNMPJDZAHSMAMN-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000007516 Chrysanthemum Nutrition 0.000 description 1
- 240000005250 Chrysanthemum indicum Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000282313 Hyaenidae Species 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910021604 Rhodium(III) chloride Inorganic materials 0.000 description 1
- 240000004808 Saccharomyces cerevisiae Species 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 1
- UBMXAAKAFOKSPA-UHFFFAOYSA-N [N].[O].[Si] Chemical compound [N].[O].[Si] UBMXAAKAFOKSPA-UHFFFAOYSA-N 0.000 description 1
- OPDZNYAUCOTAPE-UHFFFAOYSA-J [Ti+4].C(C)C(C(=O)[O-])CC.C(C)C(C(=O)[O-])CC.C(C)C(C(=O)[O-])CC.C(C)C(C(=O)[O-])CC Chemical compound [Ti+4].C(C)C(C(=O)[O-])CC.C(C)C(C(=O)[O-])CC.C(C)C(C(=O)[O-])CC.C(C)C(C(=O)[O-])CC OPDZNYAUCOTAPE-UHFFFAOYSA-J 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229940009827 aluminum acetate Drugs 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- MVIOINXPSFUJEN-UHFFFAOYSA-N benzenesulfonic acid;hydrate Chemical compound O.OS(=O)(=O)C1=CC=CC=C1 MVIOINXPSFUJEN-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000000413 hydrolysate Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- SONJTKJMTWTJCT-UHFFFAOYSA-K rhodium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Rh+3] SONJTKJMTWTJCT-UHFFFAOYSA-K 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
- C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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Description
252054 A6 B6 缓濟部中央標率房典工消费合作杜印髮 五、發明説明(1 ) 本發明係Μ於在溫度敏感之底材諸如®子之装置及塑膠 上生成含-氧化矽之陶瓷塗膜之τ種方法。可使用此等塗 腺Κ對基礎之底材提供密封之保護作用或者可使用彼等作 為介餮灌。 倍半氧化砂焼(hydrogen silsesqu丨oxane)衍生之陶瓷 塗膜在底材諸如《子裝置上之使用*於此技藝中係已知的 。例如•哈路斯卡(Haluska)及其他人在美國專利第 4,7 5Γ, 97 7號中掲示,經由在一種底材上施用倍半氧化矽 烷榭脂(H-樹脂)之一種溶液«後於空氣中、在200-1000TC 之範園内之溫度加熱經塗佈之底材,而在底材諸如霣子之 裝置上生成含-氧化矽之塗膜之一種方法。由於在600 - 800 1C之範圃内之溫度對於Η-樹脂之完全轉化成氧化矽係 需要的,因此當塗佈溫度敏感之底材諸如霣子之裝置及塑 膠時,此種方法具有有限之實用性。 在較低之溫度下將Η-樹脂轉化成含-氧化矽之物質之其 他方法•於此技藝中亦係已知的。例如,美画専利第 4,847,162號敘述Η-樹脂纆由在氨中之加熱而轉化成經Μ 硝化之氧化矽。同樣地•美國專利第5, 1 16,637號敘述胺 之使用,Κ協助Η-樹脂之縛化成含-氧化矽之物霣。然而 ,在此等方法中使用之藥劑,可係腐蝕的或者可存在環堍 或處理之鼷慮,此等顧嫌限制彼等在某些應用中之使用。 申請人等目前已發現,某些含矽烷之物霣可經由在含氧 化亞氰之一種環埦中加热而於低溫度下轉化成含-氧化矽 (請先閲讀背面之注意事項再塡寫本頁) 丨裝· -3-_ 本纸張尺度遇用t·國家襻準(CNS)甲4規格(210 X 297公*) 82.3 . 40,000 252054 A6 B6 五、發明説明(2 ) 之塗膜。 本發明涤關於在一種溫度敏感之底材上生成一種含-氣 化矽之陶瓷塗模之一種方法。此種方法包含首先在底材上 施用包含结構(Si02)x(RSi03/2)y(R2Si0)z之一種含矽烷 樹脂之一種塗料,其中R分別地包含氫或1至20届碳原子 之一種烴、y係在0.05與1之間之一僩莫耳分率Μ及X和 ζ係在0與0.95之間之莫耳分率,但以至少20%之R基係 氫為#件。然後在含氧化亞氮之一種大氣中、於足夠將樹 脂塗膜轉化成一種含-氧化矽之陶瓷塗篇之溫度下加熱經 塗佈之底材。此等方法對於在轚子之装置上生成塗膜係特 別有價值的。 本發明偽以本發明人等之發規,氧化亞氮(Μ2〇>加速於 低溫度下含矽烷之樹脂之塗祺變成含-氧化矽之塗膜之轉 化為基礎。由於此種發現避免使用先前技藝低溫度轉化方 法及蕖劑之各種問题•因此此種發現對於塗佈溫度敏感之 底材諸如《子之装置之此等樹脂之使用·,具有一種劇烈之 影響0此等問鼷已包括爆炸與瓖境之顧慮、高溫度之使用 、熟化繭之腐»性、塗膜之裂開與改變及材料之可獲得。 (請先聞讀货面之注意事項再填寫本買> •裝· 訂. 線· 經濟部t夬襟準场Λ工消费合作社印製 度霣 溫之 在子 於罨 對或 等置 彼裝 此之 因子 •霣 點如 缺諸 等材 此底 免之 避謓 法塗 方霣 之品 明高 發要 本需 於及 由感 敏 如經之 例、填 ,暦充 為霣料 作介顔 可1)經 膜ve之 塗le矽 等er含 此nt、 ons 的之装 值間體 價面晶 有平霣 別、似 特瞋造 係塗製 積之 Μ 沈轚層 之介® 料或介 塗護之 上保膠 路,上 ft· 紙 本 準 標 家 國 a I中 s) ο |(21 * 公 97 001 40.’ 6· 82· 252054 Α6 Β6 五、發明説明(3 «濟部中央螵率屌典工消费合作社印* 黏合劑系統以製造電容器與似-電容器裝置、多曆装置、 三度空間(3-D)裝置、在絕緣器装置上之矽、用於超等應 之塗膜、超结晶格子裝置及其類似物。然而,受本發明塗 佈之底材之選擇,係僅受限制於在使用之條件下底材之熱 及化學安定性之需要。因此 > 亦預期,本發明之方法可使 用在非-¾子之底材上諸如塑膠包括,例如•聚亞胺、環 氧化物、聚四氟乙烯與其共聚物、聚碳酸酯、壓克力類、 聚酯箱及其類似物。 如使用於本發明中,措辭 ''含-氣化矽之陶瓷"係意表 包括非晶形氣化矽<Si〇2>物質及非晶形似-氧化矽物筲, 此等非晶形似-氧化矽物質並非完全不含殘餘之碳、矽酵 (Si-ΟΗ)及/或氫並且其可包含另外之陶瓷之物質。視加 熱之溫度及時間而定,此等含-氧化矽之陶瓷物質可具有 各種密度。措辭"霣子之裝置"或 ''電子之霣路〃包括, 但不限於,Μ矽為基礎之裝置、·以斤化鎵為基礎之装置、 焦平面排列、光-罨子之裝置、光電池及光學之裝置。 在本發明中,經由一棰方法在一種底材上生成一種含氧 化矽之陶_瓷塗祺,此種方法包含用包含—種含矽烷 (Si-H)之樹脂之一種组合物塗佈底材,然後在包含氣化亞 氮之一種環堉中加热經塗佈之底材。 在本發明中有用之含矽烷之樹脂包含结構 (SiOdxUSiOs/ddRzSiOU之物質,其中R分別地包含 氬或1至20涸碳原子之一種烴、y偽在0.05與1之間之一 個箅耳分率Μ及X和z係在0與0.95之間之箅耳分率,但 -5 - (請先閱讀背面之注意事項再填寫#買) —裝. 訂. •埭. 本紙張又度遍用中國國家欉準(CNS)甲4洗格(210 X 297公货) 82.6· 40.000 252054 Α6 Β6 »濟部t央襻準局員工消费合作杜印製 五、發明説明(4 ) 以至少2096之R基係氫為條件。因此•在K上化學式中R 可包括,例如,氫、烷基諸如甲基、乙基,丙基、丁基、 與其他•環烷基諸如環己基•芳基諸如笨基·芳烷基、烷 芳基及未飽和之烷基諸如乙烯基、乙炔基、與其他。K上 之榭脂未完全地水解或縮合致使樹脂包含殘餘之可水解基 諸如鹵素或烷氧基或者殘餘之Si-0H基•此亦係在本發明 之範鼷內。 因£,W上物質之》例包含HSi〇3/2、 (HSi〇3/2)viH2SiO)z ' (CH3Si〇3/2)v(CH3HSiO)z > (HSi〇3/2)y((CH3)2SiO)z、(HSiO…)y(CH3HSiO)z、 (CH3CH2Si〇3/山(H2SiO)z 、 (CBHeSi〇3/2)v(CH3CH2HSiO)z ' (Si〇3)x(HSi〇3/2)v(CH3HSiO)z' (SiOzUiHSiOa/JdHzSiOU 及其類似物。 於此處有用之一種特別較佳之物霣包含(HSi03/2)„ (倍 半氧化矽烷樹脂或H-樹脂),其中η偽大於或等於8之一 涸整數。此等樹脂可係完全地纆縮合(HSi03/2>„或者彼等 可係僅部分地經水解(即,包含某些Si-〇R〉及/或部分地 經镰合(即,包含某些Si-〇H>。醮然未由此種结構代表, 但是由於在彼等之生成或處理中包括之各種因素,因此此 等樹胞可包含小Λ (例如,小於約)之具有連接於其 上之0或2·氫原子之矽原子。 Μ上之Η -樹脂及用於彼等之製造之方法’在此技*中係 已知的。例如,在美國專利第3,615,272號中考琳斯 (锖先閱讀背面之注意事項再塌寫本頁) 訂· •線. 本紙張尺度適用中困國家標準(CNS)甲4规格(210 X 297公釐) 82.fi. 40.000 52054 A6 B6 五、發明説明(5 嫌濟部中央標準房典工消费合作钍印製 (Collins)及其他人教導一種方法而製造一種幾乎完全地 經縮合之H-樹脂(此種樹脂可包含至多100 - 300百萬分點 的酵)’此棰方法包含在一種苯磺_水合物水解介質中將 三氯單矽烷水解,然後用水或含水之硫酸洗滌生成之樹脂 。同樣地,在美國專利第5,010.159號中貝克(Bank)及其 他人教導一種壤用之方法,此種方法包含在一種芳基磺酸 水合物水解介笛中將g矽烷(hydridosilanes)水解Μ生成 一檷潑脂,然後將此種樹腊與一種中和麵接》。 其他®砂氧焼(hydridosiloxane)樹脂,諸如在美國専 利第4,999,397號中由佛萊(Frye)及其他人敘述者,經由 在一種酸性、酵之水解介霣中將一種烷氧基或醢氧基矽烷 水解而製造者•在公開專利第59-178794號、第 60-86017號及第63-1071122號中敘述者或任何其他相當之 氫矽氧烷,於此處將亦有效用。 應注意者•在本發明之一僩較佳之具體賁腌例中,以上 Η-樹脂之特定之分子最部分亦可使用在本發明中。在美画 專利第5,063,267號中,哈尼門(11311116111311>及其他人教導 此等部分及彼等之製備之方法。一種較佳之部分包含其中 至少75%之聚合之物種具有1200或以上之數目平均分子量 之物霣,及一種更佳之部分包含其中至少75%之聚合之物 種具有在1200與1〇〇,〇〇〇之間之數目平均分子量之物霣。 如以上提及,Η-樹脂Μ外之樹賄於此處亦係有效用的。 例如,本發明之樹脂可包含其他RSi〇3/2單位諸如 本紙張尺度適用中a國家標準(CNS)甲4規•格(210 X 297公* ) 82.6. 40,000 (諝先W讀背面之注意事項再塡寫本頁)
U .丨裝· 訂· 線· 252054 A6 B6 經 濟 部 中 央 襻 準 * 五、發明説明(6 CH3SiO〜2、CH3Clf2Si〇3/2、(:eHsSi03/2及其類似物。此 等物皙及彼等之製備之方法於此技藝中係已知的。然而, 就大體而論,此等物霣係經由结構RSi 5(3單砂综之水解及 縮合而製造,其中X係一種可水解之取代基。 同樣地,本發明之樹脂可包含其他R:zSi0單位諸如 CH3HSiO、 CH3CH2HSiO、 CeHsHSi〇、 (CH3)2SiO、 (CH3CH2>2SiO、CeHeCH3SiO及其類似物。此等物霣及彼等 之製裔之方法在此技«中同樣地係已知的。然而’就大體 而論,此等物笛係經由结構1?251爿2之單矽烷之水解及縮合 而製造,其中X偽一種可水解之取代基。 最後,本發明之榭脂可包含Si〇2單位。此種單位通常係 經由结構SiX4之單矽烷之水解及縮合而製造,其中X係― 種可水解之取代基。 當需要包含超過一種之以上單位之物質時’彼等可烴由 K上單矽烷之共水解(cohydrolysis)或者經由各別地水解 每種單矽烷及混合水解產物而製造。 含矽烷之樹脂塗佈物霣亦可包含其他陶瓷之氧化物先霣 。此等陶瓷之氣化物先質之實例包括各棰金屬諸如鋁、钛 、睹,钽、鈮及/或釩之化合物以及各種非-金钃之化合 物諸如_或磷之化合物•此等化合物可溶解在溶液中、水 解及其後於相對地低之瀰度與相對地快涑之反應速率熱解 • Μ生成陶瓷之氣化物塗_。 Μ上之陶瓷之氧化物先霣化合物,視金屬之價而定,通 常具有鍵结於以上金圈或非-金鼸上之一個或一個Μ上可 -------------·——{--------裝----訂----ί -線 (請先閱讀背面之注意Ϋ項再填寫本頁} X 消
五,發明説明(7) A6 B6 水解之基。只要化合物係可溶於溶劑中,則包括在此等化 合物中之可水解之基之數目丨糸不重要的。同樣地,由於取 代基係經水解或經熱解而_開系统,因此正確之可水解之 取代基之埋揮係不重要的。典型之可水解之基包括,但不 限於,烷氣基•諸如甲氣基、丙氧基、丁氧基及己氧基; 醣氧基•諸如乙醯氣基或者經由一個氧而鐽结於該金颺或 非-金画之其他有機基·諸如乙醣基醋酮酸根。因此,特 定之化合物包括四2鼸基W嗣酸輅、二丁氧基二乙醢基豳 _酸鈦、三乙繭基醋嗣酸鋁及四異丁氧化钛。 當含-矽烷之樹脂係與以上陶瓷之氧化物先筲之一棰姐 合時,通常其係Μ —種數蠆使用,致使最後之陶瓷塗膜包 含70至99.9重最百分比5(02。 含矽烷之樹脂塗料物質亦可包含一種鉑、姥或鋦觸媒, Κ埔加轉化成氧化矽之速率及程度。就大《而論,可溶解 之任何鉑、铑或網化合物或者錯合物將係有效的。例如, 一種組合物諸如乙釀基醋酮酸鉑、铑《媒 RhCl3.[S(CH2CH2CH2CH3)2]3 (自道康寧公司(Dow
Corning Corporation),密得蘭(Midland),密西根州,. 獲得 > 或環烷酸網皆係在本發明之範圃内。Μ含矽烷之樹 脂之重董為基準,此等觸媒通常係Μ在5至1 000百萬分點 面 之 注 意 再 填 寫 本 頁 裝 訂 線 濟 部 央 樣 準 a 消 費 合 作 社 印 製 鉑、铑或铜之間之數量加入。 含矽烷之樹脂塗料物質亦可包含填充劑諸如氧化矽或氧 化鋁。此等《充酬在此技藝中用於抗磨蝕塗料及使用於環 氧樹脂封包劑(encapsulants)係已知的,此等填充劑可 82.6. 40.000 252054 A6 B6 五、發明説明(8 ) 經濟部中央標準场貝工消费合作杜印製 以嫌乎任 ,約1至 根據本 住何陶瓷 材之表面 方法包括 液•將其 如搢繆及 施用溶液 K生成一 藥劑之混 之物宵成 、芳烴類 類、醋類 而論,使 比溶液。 倘若使 視情況, 種觸媒之 ,旋轉塗 他相當之 然後容 脂塗料之 曜臂於一 何含最 70重最 發明之 之氣化 上。此 將樹脂 施用於 /或加 /懸浮 棰均勻 合物。 為低固 諸如笨 ,乙二 用足夠 使用,諸如Μ樹脂姐合物之總重量為基準 百分比。 : 方法*可將 物先霣、填 種施用可Κ 溶解在一棰 底材之表面 熱以溶解或 液。可使用 之溶液而不 此等溶繭可 賴含量之數 或甲苯、烷 酵_類或環 之Μ上溶劑 含矽烷之樹 充爾及/或 任何方式達 溶劑中Κ生 上。可使用 分敗樹脂及 之溶劑包括 影響生成之 包括,例如 量之,酵類 烴類諸如正 狀之二甲基 脂,及,視情況, 觸媒腌用於一種底 成,但一 成一種溶 各種協助 產生一種 將溶解或 塗膜之任 ,以足夠 諸如乙酵 庚烷或十 聚矽氧烷 以生成一棰0.1- 50 種較佳之 液或分散 之方法諸 較均勻之 分敗樹脂 何藥劑或 溶解Μ上 或異丙酵 —- χη 一误、_ 。就大體 重量百分 用一種溶液方法*則然後將包含樹脂、溶萷及, 一種改賨之陶瓷之氧化物先霣、填充劑及/或一 溶液塗佈在底材上。塗佈之方法可係,但不限於 佈、浸漬塗佈、咱霧塗佈或流動塗佈。然而,其 方法,亦認為係在本發明之範内。 許溶劑自經塗佈之底材蒸發* Μ造成含矽烷之樹 沈穰。可使用蒸發之任何逋合之方法,諸如經由 種周匾瓖境中之簡單空氣乾嫌、經由一種輿空或 82.6. 40,000 ------------丨丨」--------fl.----訂----Γ線 (請先閱讀背面之注意事項再項寫本頁} 252054 Α6 Β6 «濟部中夬櫺率爲貝工消费合作杜印製 五、發明説明(9) 逋度熱(例如,50 t:或 >>(下)之施加或者於熱處理之早期 陏段。應注意者,當使用旋轉塗佈時,當旋轉遂出溶劑時 •將另外之乾燦時間降至最低。 一巨已施用樹脂塗料*然後在一種含氧化亞氮之環境中 、於足夠將其轉化成—種含-氣化矽物霣之溫度下加熱。 在此種轉化期間,因素諸如氧化亞氰氣體澹度、氣Μ曝31 時間、溫度及加熱時間皆需要控制。 使β於本方法中之氧化亞氮,在此技藝中係已知的且係 市販的。在本發明中,氧化亞氮可以其純之形態使用,或 者其可在另外之氣體(例如,惰性氣驩諸如氬、氮、及其 他或反應之氣體)中稀釋至一種濃度,此種瀟度在選擇之 溫度條件下足夠以一棰需要之速率將樹腊轉化成氧化矽。 通常將塗膜曝置於此種氣髄中經過足夠將樹脂轉化成氧 化矽之一段時間。就大«而論•在數分鏟至數小時之範圃 内之時間係有用的(例如,2分鐘至2小時)。此種曝露可 在升灌(ramp-up)期間、在保持溫度(heat soak)期間或 者在降溫.(ramp-down)期間發生。 如Μ上提及,於此處亦考《 *樹脂可伴隨地或者連績地 曝置於協肋其轉化作用之其他反應之瓖堍中。例如*亦將 樹脂曙置於水蒸氣(例如,蒸汽)、氛、胺、其他氧化之 氣驩及其類似物中,係在本發明之範釀内。同樣地,亦考 慮·塗膜可首先在一種《性之瑁境中加熱Μ容許塗料流動 如在美國專利第5, 145, 7 23號中敘述,然後曝置於氧化亞 -11- 本紙張尺度適《 t國國家標準(CNS) Τ 4现格(210 X 297公* ) 82.6. 40,000 (請先閲讀背面之注意事項再填寫本買) -·裝· 訂. 線. 蛭濟部t央櫺準局er工消费合作社印製 252054 A6 _______B6_ 五、發明説明(10 ) « Μ瑁境中Μ容許轉化成氧化矽。 就大體而論,於此處有用之溫度係在100t:至600 ¾之範 阑内。然而,本發明中亦考處較高或較低之溫度。例如, 可使用較低之溫度*但彼等時常造成樹脂變成氧化矽之不 完全縛化及陶瓷之不足夠之硬化。同樣地·可使用較高之 溫度(例如,lOOOt:),但由於樹脂於此種溫度下、在空 氣中通常可_化成氧化矽,因此降低氧化亞氮之需要。 就尤埔而論,將經塗佈之底材於含氧化亞氮之環境中加 熱足夠轉化樹脂成氧化矽之一段時間。視溫度而定*於此 處在用於很薄之膜之數分鐮至用於很厚之瞋之數小時之範 鼸内之時間;通常係有用的。在約30 0- 600 υ之溫度下’ 將經塗佈之底材加熱1-3小時係持別較佳的。 加熱之任何方法諸如一種石英管爐、一種習用之烘箱、 反轉方向處理(reverse direction processing)(如在 美圃專利申謫案07/633,707中敘述•目前容許及讓渡予 本文相同之受譆人)或者韉射或嫌波能量之使用*於此處 通常係有效的。同樣地|加热之速率通常不是簠要之S素 ,但盡可能地快速地加熱底材係最實際且最佳的。 雖然不希望受理論之束縛,但是本發明人等於此處假設 ,當加熱氣化亞想時I其生成一種反應之離子•此種雕子 分離Si-H鐽及,因此,將樹脂交聯。 經由K上之方法,在底材上製造一種薄(小於2微米) 含-氣化矽之陶瓷平面化之塗_。塗膜使各種底材之不規 則之表面平滑及具有優良之黏著性質。此外,可用其他之 -12- 衣紙張Λ度適用中國Η家標準(CNS)甲4规格(210 X 297公赛) 82.6. 40,000 —------------{--------裝------訂----厂線 (請先閱讀背面之注意事項再填寫本頁) 252054 A6 B6 經濟部中兴樣率房S工消费合作杜印製 五、發明説明(II ) ( 看 塗料諸如另之5丨〇2層、含矽之塗料、含砂破之塗料、含砂 氮之塗料、含矽氧氮塗料及/或衾矽氮碳塗料覆M此種塗 賸。此等多層之塗膜在此技藝中係已知的’及許多係在美 S專利第4,756,977中敘述。 經由本發明製造之塗膜具有低缺陷密度及在®子之装置 上作為保護之塗臢、作為抗腐蝕與抗磨蝕之塗膜、作為抗 溫度與水分之塗膜、作為介霣》及作為抵抗離子之嫌質諸 如納ίΤ氮離子之一種擴散陣壁係有用的。 包括下列之非-限制之實例,致使热諸此技藝者可較方 便地瞭解本發明。 鬣 將經由考琳斯及其他人在美國專利第3,615,273中之方 法而製造之H-樹脂,在甲基異丁基_中稀釋成。將 H -樹腊溶液施用在一種4时(10.2厘米)圓矽晶圓之表面 上及將晶圓以3000轉每分鏟旋轉10秒鐘。然後將晶圇置於 在室湄下之一個1L 2时(5.1厘米)之石英管爐中,及在 45分鏟内將爐中之溫度昇高至425 t:,隨後於425 υ保持 通度1小時。在升溫及保持溫度之期間,將於〇 . 2 - 0 . 3时 水柱壓力( 49.7-74.6帕)之氧化亞氮之一種流體流經爐 〔約50sccm(0.024米3/秒)]。於1小時之保持湿度之後 ,停止加热及用1〇〇3(:<:»(0.047米3/秒)氮冲洗爐。 在塗除上之紅外嫌光譜資料顯示,於2259厘米-1、表示 Si-H之波峰嫌乎完全地潸失,及於1000厘米 < 與900厘米β 之雙譜線 (doublet),代表在樹脂中Si-Ο结構,係轉化 -13- 本紙張尺度適用肀困國家標準(CNS) 4规格(210 X 297公货> 82.6. 40,000 {請先Μ讀背面之注意事項#塡寫本買)
U |裝· 訂. .線· 252054 經濟部中央標準房爽工消费合作钍印製 A6 B6 五、發明説明(12) 成於1070厘米―1與800厘米―1之單譜帶(single bands), 此等譜帶係聚合物之交聯成氧化物四面體之表示。皆顯示 H -樹脂變成一種含-氧化矽塗膜之一種良好之轉化。 將經由考琳斯及其他人在美國專利第3,6 15,273中之方 法而製造之H-樹脂,在甲基異丁基酮中稀釋成10%。將 H -樹脂溶液腌用於一種4吋(10.2厘米)圓矽晶圓之表面 上及將晶圓以3000轉每分鐘旋轉10秒鐘。然後將晶圓置於 在室溫下之一個1L 2时(5.1厘米)之石英管爐中,及在 45分鏞内將爐中之溫度昇高至425 t:,皤後於425 1C 保持 溫度1小時。在升溫及保持溫度之期間,將於0.2 - 0.3吋 水柱腰力(49.7- 74.6帕)之氧化亞氮之一種流體流經爐 [約50sccra(0.024米3/秒)]。此外,於保持溫度之最初 10分鏑期間,將1.2檷準升每分鐘之蒸汽(101T:)加入氣 體混合物中(蒸汽:N20之比例= 20:1)[約10奄升/ 10分鏟)。於1小時之保持溫度之後,停止加熱及用 lOOsc.cm ( 0.047米3/秒)氮冲洗燫。 在經塗佈之晶圖上之火焰熱離子紅外線(FTIR)資料顯示 ,於2259厘米―1、表示Si-H之波峰已完全地淌失,及於 10 00厘米-1與900厘米-1之雙譜線·代表在樹脂中Si-Ο结 構,係轉化成於1070厘米-1與800厘米-1之單譜帶,此等 譜帶係聚合物之交聯成氧化物四面體之表示。皆顯示H-樹 脂變成一種含-氧化矽之塗膜之一種良好之轉化。 _ 1 4 _ 本紙張M適用中國國家標準(CNS)甲4规格(210 X 297公货) -------------Γ'-------裝----訂----^ -線 (請先閲讀背面之注意事項再填寫本頁)
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- 第8 2 1 Ο 5 6 3 5號專利申請案 ... Α8 園歧iF太(84年朵月gg D8 . '‘修正 年月曰、_^>·補,: 申請專利範圍252054 一種在底材上生成含氧化矽之陶瓷塗膜之方法 > 此種方 法包含: 在底材上施用包含结構(Si02)x(RSi03/2)y(R2Si0)z之 2 . —種矽烷樹脂之一種塗料,其 2〇個碳原子之一種烴、y係在 分率及X和z涤在0與0.95之 2 0 %之R基係氫為條件:以及 在包含氧化亞氮之一種大氣中 轉化成一種含-氧化矽之陶瓷 之底材。 根據申請專利範圍第1項之方 倍半氧化矽烷樹脂或(HSi03/2 根據申請専利範園第1項之方 在100t:與6001之間範圍內之 之時間。 根據申請專利範圍第2項之方 氧化矽垸樹脂,此棰樹脂係經 之物種具有在1200與100,000 中R分別地包含氫或1至 0.05與1之間之一個冥耳 間之奠耳分率,但K至少 、於足夠將矽垸樹脂塗膜 塗膜之溫度下加熱經塗佈 法,其中矽烷樹脂係選自 )y(H2SiO)Z 。 法,其中經塗佈之底材係 溫度下加熱1與3小時之間 法·其中矽烷樹脂係倍半 分皤致使至少75%之聚合 之間之數目平均分子最。 (請先閲讀背面之注意事項再填寫本萸) .裝. ,ιί 線 5 . 根據申讅專利範圃第1項之方法,其中矽烷樹脂塗料亦 包含改質之陶瓷之《化物先質,此等先質包含一種化合 物,此棰化合物包含選自包括鈦、锆、鋁、钽、釩、錦 、硼及磷之一棰元素,其中化合物包含選自包括烷氧基 或醢氧基之至少一個可水解之取代基及化合物係以—棰 本紙张尺度適州中闽阈家榡华(CNS ) Λ4現格(m〇x 297公I ) Ag I 84. i - 2 ΓΜ 252054 b8 i :.ί D8 j______ 六、申請專利範圍 數量存在致使含氧化矽之陶瓷塗膜包含0.1至30重量百 分比改質之陶瓷氧化物。 6. 根據申請專利範圍第1項之方法,其中矽烷樹脂塗料亦 Μ樹脂之重量為基準,K在5與500百萬分點鉑或鍩之 數量包含一種鉑或姥觸媒。 7. 根據申請專利範圍第1項之方法,其中加熱之大氣亦包 含一種惰性之氣體。 8. 根據申請專利範圍第1項之方法,其中加熱之大氣亦包 含一種另外之反應之氣體。 9. 根據申請專利範圍第1項之方法,其中加熱之大氣亦包 含水蒸氣。 本哏张尺度適爪中阈闽家標华((’NS ) Λ4坭格(2丨ΟΧ2*ί7公釐) ---------^------1Τ------0 (請先閲讀背面之注意事項再填寫本頁)
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US91243692A | 1992-07-13 | 1992-07-13 | |
US07/994,225 US5436029A (en) | 1992-07-13 | 1992-12-21 | Curing silicon hydride containing materials by exposure to nitrous oxide |
Publications (1)
Publication Number | Publication Date |
---|---|
TW252054B true TW252054B (zh) | 1995-07-21 |
Family
ID=27129600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW082105635A TW252054B (zh) | 1992-07-13 | 1993-07-15 |
Country Status (7)
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US (1) | US5436029A (zh) |
EP (1) | EP0579456B1 (zh) |
JP (1) | JP3298990B2 (zh) |
KR (1) | KR100251819B1 (zh) |
CA (1) | CA2100278A1 (zh) |
DE (1) | DE69311639T2 (zh) |
TW (1) | TW252054B (zh) |
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US5380555A (en) * | 1993-02-09 | 1995-01-10 | Dow Corning Toray Silicone Co., Ltd. | Methods for the formation of a silicon oxide film |
US5547703A (en) * | 1994-04-11 | 1996-08-20 | Dow Corning Corporation | Method of forming si-o containing coatings |
US5508238A (en) * | 1995-05-11 | 1996-04-16 | Dow Corning Corporation | Monolithic ceramic bodies using modified hydrogen silsesquioxane resin |
US5609925A (en) | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
US5707683A (en) * | 1996-02-22 | 1998-01-13 | Dow Corning Corporation | Electronic coating composition method of coating an electronic substrate, composition and article |
US5707681A (en) * | 1997-02-07 | 1998-01-13 | Dow Corning Corporation | Method of producing coatings on electronic substrates |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
TW392288B (en) * | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
DE19756325A1 (de) * | 1997-12-18 | 1999-07-01 | Daimler Chrysler Ag | Halbleiterscheibe mit integrierten Einzelbauelementen, Verfahren und Vorrichtung zur Herstellung einer Halbleiterscheibe |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
KR100371436B1 (ko) * | 1999-07-30 | 2003-02-07 | 이형찬 | 자동 또는 수동으로 채널 선택이 가능한 무선 헤드폰 |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
SE521977C2 (sv) * | 2002-06-20 | 2003-12-23 | Mobile Media Group Stockholm A | Metod och apparat för att formatera en webbtjänst |
KR20080017368A (ko) * | 2005-06-15 | 2008-02-26 | 다우 코닝 코포레이션 | 수소 실세스퀴옥산의 경화 방법 및 나노미터 크기의트렌치에서의 치밀화 방법 |
JP5043317B2 (ja) * | 2005-08-05 | 2012-10-10 | 東レ・ダウコーニング株式会社 | 環状ジハイドロジェンポリシロキサン、ハイドロジェンポリシロキサン、それらの製造方法、シリカ系ガラス成形体およびその製造方法、光学素子およびその製造方法 |
JP4783117B2 (ja) * | 2005-10-21 | 2011-09-28 | 東レ・ダウコーニング株式会社 | シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置 |
JP2008260918A (ja) * | 2007-03-16 | 2008-10-30 | Jsr Corp | 膜形成用組成物およびシリカ系膜とその形成方法 |
JP2008260917A (ja) * | 2007-03-16 | 2008-10-30 | Jsr Corp | 膜形成用組成物およびシリカ系膜とその形成方法 |
WO2008114835A1 (ja) * | 2007-03-16 | 2008-09-25 | Jsr Corporation | 膜形成用組成物およびシリ力系膜とその形成方法 |
JP5313478B2 (ja) * | 2007-10-05 | 2013-10-09 | 東レ・ダウコーニング株式会社 | セラミック状酸化ケイ素系被膜の形成方法、セラミック状酸化ケイ素系被膜を有する無機質基材の製造方法、セラミック状酸化ケイ素系被膜形成剤および半導体装置 |
WO2009096603A1 (ja) * | 2008-02-01 | 2009-08-06 | Jsr Corporation | トレンチアイソレーションの形成方法 |
KR100963224B1 (ko) | 2009-02-03 | 2010-06-10 | (주) 더몰론코리아 | 물 또는 공기 중에서 겸용 사용이 가능한 세라믹 코팅 히터 |
KR101236491B1 (ko) | 2011-03-08 | 2013-02-22 | (주)우드케어 | 상온에서 경화가 가능한 세라믹 도료 조성물 |
US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
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Publication number | Priority date | Publication date | Assignee | Title |
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US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
JPS6377139A (ja) * | 1986-09-19 | 1988-04-07 | Fujitsu Ltd | 絶縁膜の形成方法 |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
US5262201A (en) * | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
US5145723A (en) * | 1991-06-05 | 1992-09-08 | Dow Corning Corporation | Process for coating a substrate with silica |
-
1992
- 1992-12-21 US US07/994,225 patent/US5436029A/en not_active Expired - Fee Related
-
1993
- 1993-07-08 EP EP93305375A patent/EP0579456B1/en not_active Expired - Lifetime
- 1993-07-08 DE DE69311639T patent/DE69311639T2/de not_active Expired - Fee Related
- 1993-07-12 CA CA002100278A patent/CA2100278A1/en not_active Abandoned
- 1993-07-13 KR KR1019930013106A patent/KR100251819B1/ko not_active IP Right Cessation
- 1993-07-13 JP JP17296893A patent/JP3298990B2/ja not_active Expired - Fee Related
- 1993-07-15 TW TW082105635A patent/TW252054B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR100251819B1 (ko) | 2000-04-15 |
EP0579456B1 (en) | 1997-06-18 |
CA2100278A1 (en) | 1994-01-14 |
EP0579456A2 (en) | 1994-01-19 |
DE69311639D1 (de) | 1997-07-24 |
EP0579456A3 (zh) | 1994-04-20 |
JPH06191970A (ja) | 1994-07-12 |
DE69311639T2 (de) | 1998-01-22 |
US5436029A (en) | 1995-07-25 |
JP3298990B2 (ja) | 2002-07-08 |
KR940005519A (ko) | 1994-03-21 |
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