DE69311639D1 - Thermische Behandlung von Siliziumhydrid enthaltenden Materialen in einer Stickstoffoxyd-Atmosphäre - Google Patents
Thermische Behandlung von Siliziumhydrid enthaltenden Materialen in einer Stickstoffoxyd-AtmosphäreInfo
- Publication number
- DE69311639D1 DE69311639D1 DE69311639T DE69311639T DE69311639D1 DE 69311639 D1 DE69311639 D1 DE 69311639D1 DE 69311639 T DE69311639 T DE 69311639T DE 69311639 T DE69311639 T DE 69311639T DE 69311639 D1 DE69311639 D1 DE 69311639D1
- Authority
- DE
- Germany
- Prior art keywords
- thermal treatment
- nitrogen oxide
- containing silicon
- materials containing
- silicon hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 title 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 229910052990 silicon hydride Inorganic materials 0.000 title 1
- 238000007669 thermal treatment Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
- C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Silicon Compounds (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91243692A | 1992-07-13 | 1992-07-13 | |
US07/994,225 US5436029A (en) | 1992-07-13 | 1992-12-21 | Curing silicon hydride containing materials by exposure to nitrous oxide |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69311639D1 true DE69311639D1 (de) | 1997-07-24 |
DE69311639T2 DE69311639T2 (de) | 1998-01-22 |
Family
ID=27129600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69311639T Expired - Fee Related DE69311639T2 (de) | 1992-07-13 | 1993-07-08 | Thermische Behandlung von Siliziumhydrid enthaltenden Materialen in einer Stickstoffoxyd-Atmosphäre |
Country Status (7)
Country | Link |
---|---|
US (1) | US5436029A (de) |
EP (1) | EP0579456B1 (de) |
JP (1) | JP3298990B2 (de) |
KR (1) | KR100251819B1 (de) |
CA (1) | CA2100278A1 (de) |
DE (1) | DE69311639T2 (de) |
TW (1) | TW252054B (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5380555A (en) * | 1993-02-09 | 1995-01-10 | Dow Corning Toray Silicone Co., Ltd. | Methods for the formation of a silicon oxide film |
US5547703A (en) * | 1994-04-11 | 1996-08-20 | Dow Corning Corporation | Method of forming si-o containing coatings |
US5508238A (en) * | 1995-05-11 | 1996-04-16 | Dow Corning Corporation | Monolithic ceramic bodies using modified hydrogen silsesquioxane resin |
US5609925A (en) * | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
US5707683A (en) * | 1996-02-22 | 1998-01-13 | Dow Corning Corporation | Electronic coating composition method of coating an electronic substrate, composition and article |
US5707681A (en) * | 1997-02-07 | 1998-01-13 | Dow Corning Corporation | Method of producing coatings on electronic substrates |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
TW392288B (en) * | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
DE19756325A1 (de) * | 1997-12-18 | 1999-07-01 | Daimler Chrysler Ag | Halbleiterscheibe mit integrierten Einzelbauelementen, Verfahren und Vorrichtung zur Herstellung einer Halbleiterscheibe |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US6218020B1 (en) * | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
KR100371436B1 (ko) * | 1999-07-30 | 2003-02-07 | 이형찬 | 자동 또는 수동으로 채널 선택이 가능한 무선 헤드폰 |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
SE521977C2 (sv) * | 2002-06-20 | 2003-12-23 | Mobile Media Group Stockholm A | Metod och apparat för att formatera en webbtjänst |
JP2008547194A (ja) * | 2005-06-15 | 2008-12-25 | ダウ・コーニング・コーポレイション | 水素シルセスキオキサンを硬化させていき、ナノスケールのトレンチ中において密にさせる方法 |
JP5043317B2 (ja) * | 2005-08-05 | 2012-10-10 | 東レ・ダウコーニング株式会社 | 環状ジハイドロジェンポリシロキサン、ハイドロジェンポリシロキサン、それらの製造方法、シリカ系ガラス成形体およびその製造方法、光学素子およびその製造方法 |
JP4783117B2 (ja) * | 2005-10-21 | 2011-09-28 | 東レ・ダウコーニング株式会社 | シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置 |
JP2008260917A (ja) * | 2007-03-16 | 2008-10-30 | Jsr Corp | 膜形成用組成物およびシリカ系膜とその形成方法 |
JP2008260918A (ja) * | 2007-03-16 | 2008-10-30 | Jsr Corp | 膜形成用組成物およびシリカ系膜とその形成方法 |
WO2008114835A1 (ja) * | 2007-03-16 | 2008-09-25 | Jsr Corporation | 膜形成用組成物およびシリ力系膜とその形成方法 |
JP5313478B2 (ja) * | 2007-10-05 | 2013-10-09 | 東レ・ダウコーニング株式会社 | セラミック状酸化ケイ素系被膜の形成方法、セラミック状酸化ケイ素系被膜を有する無機質基材の製造方法、セラミック状酸化ケイ素系被膜形成剤および半導体装置 |
JPWO2009096603A1 (ja) * | 2008-02-01 | 2011-05-26 | Jsr株式会社 | トレンチアイソレーションの形成方法 |
KR100963224B1 (ko) * | 2009-02-03 | 2010-06-10 | (주) 더몰론코리아 | 물 또는 공기 중에서 겸용 사용이 가능한 세라믹 코팅 히터 |
KR101236491B1 (ko) | 2011-03-08 | 2013-02-22 | (주)우드케어 | 상온에서 경화가 가능한 세라믹 도료 조성물 |
US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
JPS6377139A (ja) * | 1986-09-19 | 1988-04-07 | Fujitsu Ltd | 絶縁膜の形成方法 |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
US5262201A (en) * | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5059448A (en) * | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
US5145723A (en) * | 1991-06-05 | 1992-09-08 | Dow Corning Corporation | Process for coating a substrate with silica |
-
1992
- 1992-12-21 US US07/994,225 patent/US5436029A/en not_active Expired - Fee Related
-
1993
- 1993-07-08 EP EP93305375A patent/EP0579456B1/de not_active Expired - Lifetime
- 1993-07-08 DE DE69311639T patent/DE69311639T2/de not_active Expired - Fee Related
- 1993-07-12 CA CA002100278A patent/CA2100278A1/en not_active Abandoned
- 1993-07-13 KR KR1019930013106A patent/KR100251819B1/ko not_active IP Right Cessation
- 1993-07-13 JP JP17296893A patent/JP3298990B2/ja not_active Expired - Fee Related
- 1993-07-15 TW TW082105635A patent/TW252054B/zh active
Also Published As
Publication number | Publication date |
---|---|
DE69311639T2 (de) | 1998-01-22 |
EP0579456A2 (de) | 1994-01-19 |
JP3298990B2 (ja) | 2002-07-08 |
US5436029A (en) | 1995-07-25 |
KR100251819B1 (ko) | 2000-04-15 |
CA2100278A1 (en) | 1994-01-14 |
EP0579456A3 (de) | 1994-04-20 |
KR940005519A (ko) | 1994-03-21 |
EP0579456B1 (de) | 1997-06-18 |
TW252054B (de) | 1995-07-21 |
JPH06191970A (ja) | 1994-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |